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    CGHV96 Search Results

    CGHV96 Datasheets (13)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CGHV96050F1
    		Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 40V 440210 Original PDF 1.72MB
    CGHV96050F1-AMP
    		Wolfspeed CGHV96050F1 DEV BOARD WITH HEMT Original PDF 1.66MB
    CGHV96050F1-AMP
    		Wolfspeed CGHV96050F1 DEV BOARD WITH HEMT Original PDF 1.82MB
    CGHV96050F1-TB
    		Cree/Wolfspeed RF/IF and RFID - RF Evaluation and Development Kits, Boards - BOARD TEST FIXTURE FOR CGHV96050 Original PDF 1.72MB
    CGHV96050F2
    		Cree RF FETs, Discrete Semiconductor Products, FET RF GAN HEMT 50W Original PDF 12
    CGHV96050F2-AMP
    		Wolfspeed CGHV96050F2 DEV BOARD WITH HEMT Original PDF 1.15MB
    CGHV96050F2-TB
    		Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, TEST FIXTURE FOR CGHV96050F2 Original PDF 12
    CGHV96100F2
    		Cree RF FETs, Discrete Semiconductor Products, FET RF GAN HEMT 100W Original PDF 12
    CGHV96100F2-AMP
    		Wolfspeed CGHV96100F2 DEV BOARD WITH HEMT Original PDF 1.57MB
    CGHV96100F2-AMP
    		Wolfspeed CGHV96100F2 DEV BOARD WITH HEMT Original PDF 1.24MB
    CGHV96100F2-TB
    		Cree RF Evaluation and Development Kits, Boards, RF/IF and RFID, TEST FIXTURE FOR CGHV96100F2 Original PDF 12
    CGHV96130F
    		Wolfspeed 100W GAN HEMT 7.9-9.6GHZ 50-OHM Original PDF 960.33KB
    CGHV96130F-AMP
    		Wolfspeed 8.4-9.6GHZ, AMP W/ CGHV96100F2 Original PDF 960.33KB
    SF Impression Pixel

    CGHV96 Price and Stock

    MACOM

    MACOM CGHV96130F

    RF MOSFET HEMT 40V 440217
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGHV96130F Tray 21 1
    • 1 $1468.59
    • 10 $1468.59
    • 100 $1468.59
    • 1000 $1468.59
    • 10000 $1468.59
    		Buy Now
    Mouser Electronics CGHV96130F 40
    • 1 $1468.59
    • 10 $1468.59
    • 100 $1468.59
    • 1000 $1468.59
    • 10000 $1468.59
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    Verical CGHV96130F 5 1
    • 1 $1376.55
    • 10 $1376.55
    • 100 $1376.55
    • 1000 $1376.55
    • 10000 $1376.55
    		Buy Now
    Richardson RFPD CGHV96130F 5 10
    • 1 -
    • 10 $1376.54
    • 100 $1376.54
    • 1000 $1376.54
    • 10000 $1376.54
    		Buy Now

    MACOM CGHV96050F1

    RF MOSFET HEMT 40V 440210
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGHV96050F1 Tray 16 1
    • 1 $626.67
    • 10 $549.32
    • 100 $549.32
    • 1000 $549.32
    • 10000 $549.32
    		Buy Now
    Mouser Electronics CGHV96050F1
    • 1 -
    • 10 -
    • 100 $549.31
    • 1000 $549.31
    • 10000 $549.31
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    Verical CGHV96050F1 29 1
    • 1 $592.85
    • 10 $592.85
    • 100 $592.85
    • 1000 $592.85
    • 10000 $592.85
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    Richardson RFPD CGHV96050F1 29 1
    • 1 $395.21
    • 10 $395.21
    • 100 $395.21
    • 1000 $395.21
    • 10000 $395.21
    		Buy Now

    MACOM CGHV96130F-AMP

    RF MOSFET HEMT 40V 440217
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGHV96130F-AMP Bulk 2 1
    • 1 $1840.61
    • 10 $1840.61
    • 100 $1840.61
    • 1000 $1840.61
    • 10000 $1840.61
    		Buy Now
    Richardson RFPD CGHV96130F-AMP 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    MACOM CGHV96100F2-AMP

    CGHV96100F2 DEV BOARD WITH HEMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGHV96100F2-AMP Box 1 1
    • 1 $1860.81
    • 10 $1860.81
    • 100 $1860.81
    • 1000 $1860.81
    • 10000 $1860.81
    		Buy Now
    Richardson RFPD CGHV96100F2-AMP 1
    • 1 $1814.48
    • 10 $1814.48
    • 100 $1814.48
    • 1000 $1814.48
    • 10000 $1814.48
    		Buy Now

    MACOM CGHV96050F2

    RF MOSFET HEMT 40V 440210
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGHV96050F2 Tray 1
    • 1 $986.00
    • 10 $872.78
    • 100 $872.78
    • 1000 $872.78
    • 10000 $872.78
    		Buy Now
    Mouser Electronics CGHV96050F2
    • 1 $985.85
    • 10 $985.85
    • 100 $985.85
    • 1000 $985.85
    • 10000 $985.85
    		Get Quote
    Richardson RFPD CGHV96050F2 10
    • 1 -
    • 10 $736.12
    • 100 $736.12
    • 1000 $736.12
    • 10000 $736.12
    		Buy Now
    Find more CGHV96 price and stock on Findchips.com

    CGHV96 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2 PDF

    CGHV96050F2

    Contextual Info: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96050F2 50-ohm, CGHV96050F2 CGHV96 050F2 PDF

    Contextual Info: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96100F1 50-ohm, CGHV96100F1 CGHV96 100F1 PDF

    40VPulse

    Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2 40VPulse PDF

    Contextual Info: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96050F2 50-ohm, CGHV96050F2 PDF

    Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2 PDF

    Contextual Info: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96050F1 50-ohm, CGHV96050F1 CGHV96 050F1 PDF

    Contextual Info: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96050F1 50-ohm, CGHV96050F1 CGHV96 050F1 PDF

    CGHV96050F2

    Abstract: CGHV96
    Contextual Info: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96050F2 50-ohm, CGHV96050F2 CGHV96 050F2 PDF

    CGHV96100F2

    Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2 PDF

    CGHV96050F1

    Contextual Info: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96050F1 50-ohm, CGHV96050F1 CGHV96 050F1 PDF

    Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2 PDF

    CGHV96100F1

    Abstract: taconic
    Contextual Info: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		CGHV96100F1 50-ohm, CGHV96100F1 CGHV96 100F1 taconic PDF