Datasheet Archive: CGHV96 datasheets

CGHV96 Datasheets (13)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CGHV96050F1	Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 40V 440210	Original	PDF	1.72MB
CGHV96050F1-AMP	Wolfspeed	CGHV96050F1 DEV BOARD WITH HEMT	Original	PDF	1.66MB
CGHV96050F1-AMP	Wolfspeed	CGHV96050F1 DEV BOARD WITH HEMT	Original	PDF	1.82MB
CGHV96050F1-TB	Cree/Wolfspeed	RF/IF and RFID - RF Evaluation and Development Kits, Boards - BOARD TEST FIXTURE FOR CGHV96050	Original	PDF	1.72MB
CGHV96050F2	Cree	RF FETs, Discrete Semiconductor Products, FET RF GAN HEMT 50W	Original	PDF		12
CGHV96050F2-AMP	Wolfspeed	CGHV96050F2 DEV BOARD WITH HEMT	Original	PDF	1.15MB
CGHV96050F2-TB	Cree	RF Evaluation and Development Kits, Boards, RF/IF and RFID, TEST FIXTURE FOR CGHV96050F2	Original	PDF		12
CGHV96100F2	Cree	RF FETs, Discrete Semiconductor Products, FET RF GAN HEMT 100W	Original	PDF		12
CGHV96100F2-AMP	Wolfspeed	CGHV96100F2 DEV BOARD WITH HEMT	Original	PDF	1.57MB
CGHV96100F2-AMP	Wolfspeed	CGHV96100F2 DEV BOARD WITH HEMT	Original	PDF	1.24MB
CGHV96100F2-TB	Cree	RF Evaluation and Development Kits, Boards, RF/IF and RFID, TEST FIXTURE FOR CGHV96100F2	Original	PDF		12
CGHV96130F	Wolfspeed	100W GAN HEMT 7.9-9.6GHZ 50-OHM	Original	PDF	960.33KB
CGHV96130F-AMP	Wolfspeed	8.4-9.6GHZ, AMP W/ CGHV96100F2	Original	PDF	960.33KB

CGHV96 Price and Stock

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MACOM


MACOM CGHV96130F RF MOSFET HEMT 40V 440217
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGHV96130F	Tray	21		1	1 $1468.59 10 $1468.59 100 $1468.59 1000 $1468.59 10000 $1468.59	Buy Now
Mouser Electronics	CGHV96130F		18			1 $1468.59 10 $1468.59 100 $1468.59 1000 $1468.59 10000 $1468.59	Buy Now
Verical	CGHV96130F		5		1	1 $1743.20 10 $1743.20 100 $1743.20 1000 $1743.20 10000 $1743.20	Buy Now
Richardson RFPD	CGHV96130F		5		1	1 $1743.18 10 $1743.18 100 $1743.18 1000 $1743.18 10000 $1743.18	Buy Now
MACOM CGHV96050F1 RF MOSFET HEMT 40V 440210
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGHV96050F1	Tray	16		1	1 $626.67 10 $549.32 100 $549.32 1000 $549.32 10000 $549.32	Buy Now
Mouser Electronics	CGHV96050F1					1 - 10 - 100 $549.31 1000 $549.31 10000 $549.31	Get Quote
Verical	CGHV96050F1		29		1	1 $592.85 10 $592.85 100 $592.85 1000 $592.85 10000 $592.85	Buy Now
Richardson RFPD	CGHV96050F1		29		1	1 $395.21 10 $395.21 100 $395.21 1000 $395.21 10000 $395.21	Buy Now
MACOM CGHV96050F2 RF MOSFET HEMT 40V 440210
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGHV96050F2	Tray	15		1	1 $986.00 10 $872.78 100 $872.78 1000 $872.78 10000 $872.78	Buy Now
Mouser Electronics	CGHV96050F2					1 $985.85 10 $985.85 100 $985.85 1000 $985.85 10000 $985.85	Get Quote
Richardson RFPD	CGHV96050F2				1	1 $932.18 10 $932.18 100 $932.18 1000 $932.18 10000 $932.18	Buy Now
Chip Stock	CGHV96050F2		142			1 - 10 - 100 - 1000 - 10000 -	Get Quote
MACOM CGHV96130F-AMP RF MOSFET HEMT 40V 440217
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGHV96130F-AMP	Bulk	2		1	1 $1840.61 10 $1840.61 100 $1840.61 1000 $1840.61 10000 $1840.61	Buy Now
Richardson RFPD	CGHV96130F-AMP				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
MACOM CGHV96100F2-AMP CGHV96100F2 DEV BOARD WITH HEMT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGHV96100F2-AMP	Box	2		1	1 $1691.62 10 $1691.62 100 $1691.62 1000 $1691.62 10000 $1691.62	Buy Now
Richardson RFPD	CGHV96100F2-AMP				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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CGHV96 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2	PDF
CGHV96050F2 Contextual Info: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96050F2 50-ohm, CGHV96050F2 CGHV96 050F2	PDF
Contextual Info: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F1 50-ohm, CGHV96100F1 CGHV96 100F1	PDF
40VPulse Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2 40VPulse	PDF
Contextual Info: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96050F2 50-ohm, CGHV96050F2	PDF
Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2	PDF
Contextual Info: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96050F1 50-ohm, CGHV96050F1 CGHV96 050F1	PDF
Contextual Info: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96050F1 50-ohm, CGHV96050F1 CGHV96 050F1	PDF
CGHV96050F2 Abstract: CGHV96 Contextual Info: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96050F2 50-ohm, CGHV96050F2 CGHV96 050F2	PDF
CGHV96100F2 Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2	PDF
CGHV96050F1 Contextual Info: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96050F1 50-ohm, CGHV96050F1 CGHV96 050F1	PDF
Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2	PDF
CGHV96100F1 Abstract: taconic Contextual Info: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F1 50-ohm, CGHV96100F1 CGHV96 100F1 taconic	PDF

CGHV96 Search Results

CGHV96 Datasheets (13)

CGHV96 Price and Stock

MACOM CGHV96130F

MACOM CGHV96050F1

MACOM CGHV96050F2

MACOM CGHV96130F-AMP

MACOM CGHV96100F2-AMP

CGHV96 Datasheets Context Search

CGHV96050F2

40VPulse

CGHV96050F2

CGHV96100F2

CGHV96050F1

CGHV96100F1