CGC SWITCH Search Results

2N5434

Abstract: S 5018 2N5432 2N5433 X2N5432 X2N5433 X2N5434
Contextual Info: CALOGIC CORP 4flE D • 000032b <3 ■ CGC N-Channel JFET Switch CORPORATION vJ T -3 S -Z S ’ 2N5432- 2N5434 FEATURES ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted • LOW fd*<on) • Excellent Switching • Low Cutoff Current Gate-Source Voltage. -25V

2N2608

Abstract: 2N2609 2N2607 X2N2607 p-channel-jfet X2N2608 X2N2609 2N2607-2N2609
Contextual Info: CALOGIC 1ÖM4325 MfiE D CORP OOOOSflb 1 I CGC caloric CORPORATION V 2N2607-2N2609 APPLICATIONS ABSO LU TE MAXIMUM RATINGS Ta = 25°C unless otherwise noted • Low-Level Choppers • Data Switches • Commutators G ate-Source V o lta g e . 30V

226a surface mount diode

Abstract: TO-226A JPAD50 TO-92 CALOGIC D 92 M 03 DIODE JPAD20 JPAD200 XJPAD10 2411 sot23 XJPAD20
Contextual Info: JPAD5 /JPAD10 1JPAD20 /JPAD501JPAD100 /JPAD20C CALOGIC CORP Low Leakage Pico Amp Diodes 10 4 4 3 5 2 4flE D 0000424 • CGC caloric CORPORATION V JPAD5/JPAD10/JPAD20/JPAD50/JPAD100/JPAD200 DESCRIPTIO N FEATURES • Low Leakage . 5 pA JPAD5

2N3824

Abstract: N-Channel JFET Switch TO72 package n-channel jfet
Contextual Info: 2N3824 CALOGIC 4öE CORP 1Û44322 D OOOOE^a 1 • CGC calori* N-ChannelJFET Switch CORPO RATIO N v 'T-ss-zs 2N3824 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted FEATURES • rds<250 0 h m s • lD(off><0.1nA Gate-Source or Gate-Drain Voltage . -50V

TMPZ84C011

Abstract: CTC 313 TMPZ84C011AF-6 TMPZ84C011AF MPUZ80-298 BM80-2 CST8.00MT 84c011 Toshiba TMPZ84C011 TMPZ84C011A
Contextual Info: TO SH IB A TMPZ84C011A TMPZ84C011AF-6 TLCS-Z80 MICROPROCESSOR 1. O V ERVIEW AND FEATURES The TMPZ84C011A is a high-performance CMOS 8-bit microprocessor that contains the functional peripherals such as counter timer circuit CTC parallel I/O port, and clock generator/controller (CGC) around the TLCS-Z80 MPU. This microprocessor

2N5018

Abstract: 2N5019 X2N5018 X2N5019
Contextual Info: CALOÛIC CORP 4ôE D lñM432E 000031b b CGC c a lo r o CORPORATION \J 2N5018/2N5019 P-Channel JFET Switch 2N5018/2N5019 ABSO LU TE MAXIMUM RATINGS T a - 25°C unless otherwise noted FEATURES • Low Insertion Loss • No Offset or Error Voltages Generated By Closed Switch

SD5501

Abstract: 5B42 SD5501N XSD5501
Contextual Info: 46E D SD5501 CALO GI C CORP 1Ô4432B 0G00277 Q • CGC calcxrt N-Channel Depletion-Mode 4-Channel DMOS FETArray CORPORATION v T-SMl SD5501 FEATURES DESCRIPTION • • • • The SD5501 is manufactured utilizing Calogic’s proprietary high speed, low capacitance DMOS process featuring an

35z5

Abstract: SD404 SD404BD SD404CY XSD404
Contextual Info: SD4Q4 CALOGIC MAE D CORP 1Ô4M3SS Ü0002SS 1 CGC . _ C U lO O Iv High Speed DMOS N-Channel Switch C O RPORATION V SD404 "T -35Z 5 FEATURES DESCRIPTION • • • • • • The SD404 is an N-Channel Enhancement Mode device processed with Calogic's ultra high speed lateral DMOS

U1899

Abstract: U1897 2n43 U1898
Contextual Info: U l897 -U 1899 CA LO GI C CORP 4ÖE ] „ •§ D D D 0 4D 1 fl ■ CGC N-Channel JFET Switch CORPORATION T -Î 9 -Z 5 U18S7-U1899 ABSO LU TE MAXIMUM RATINGS Ta = 25°C unless otherwise specified) FEATURES • Low Insertion Loss • No Error or Offset Voltage Generated By Closed Switch

0F30

Abstract: CGC SWITCH PBTF
Contextual Info: OF=50±15 gl 02.5±O.O5 SAFETY STANDARD APPROVAL: W c5UM SM o LEVER SPECIFICATION 5 A 1 2 5 V A C 0 J L CU Ü UPPER H O U 9N G P8T ♦ Q F 30% TEflWINAL 8 r* w Strip / A o C d O i2 Natural Stack SA 25CWAC CVD€. CE. CGC SPRING PLATE 0 e c 2 / A o C d 0 l2

A 3120 optocoupler

Abstract: A 3150 optocoupler induction cooker block diagrams A 3150 igbt driver Optocoupler HP 3120 IC A 3120 igbt drive A J312 a 314j inverter IGBT driver hcpl3120 j312
Contextual Info: Main Applications and Selection of Gate Driver Optocouplers Application Note 1335 Introduction IGBTs are now commonly used as switching components in both inverter and converter circuits, which are used in power control and motor drive applications. A typical

Contextual Info: MIC95410 6.6mΩ RDS ON , 7A, 5.5V VIN Load Switch in 1.2mm x 2.0mm QFN Package General Description Features The MIC95410 is a high-side load switch for computing and ultra-dense embedded computing boards where highcurrent low-voltage rails from sub-1V to 5.5V have to be

C849

Abstract: C854 C853
Contextual Info: P D - 9.1073 bitemational [ros]Rectifier ÌRGBC40K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

c331 transistor

Contextual Info: international ri“ HlRectifier P D -9.1024 IRGPC50M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-ioss rating includes all 'tail" losses • Optimized for medium operating frequency 1 to

Contextual Info: SEMICONDUCTOR KTK920T TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR Tuner FEATURES E Low loss at on state Typ 1dB@1GHz B DIM MILLIMETERS _ 0.2 2.9 + A With built-in bias diode 1 4 B F A C 3 2.8+0.2/-0.3 _ 0.2 1.9 + _ 0.05 0.16 +

diode 1GHz

Abstract: KTK920BU FET MARKING
Contextual Info: SEMICONDUCTOR KTK920BU TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR Tuner FEATURES Low loss at on state Typ 1dB@1GHz E M B M 4 2 3 D J 1 H L C A With built-in bias diode N K N DIM A B C D E H J K L M N MILLIMETERS _ 0.20 2.00 +

Contextual Info: SEMICONDUCTOR KTK920T TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR/DVD/SET Top Box Tuner FEATURES E ・Low loss at on state Typ 1dB@1GHz B DIM MILLIMETERS _ 0.2 A 2.9 + ・With built-in bias diode 1 4 B 3 D _ 0.1 0.4 + E F G H

KTK920BT

Contextual Info: SEMICONDUCTOR KTK920BT TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR Tuner FEATURES E Low loss at on state Typ 1dB@1GHz B DIM MILLIMETERS _ 0.2 A 2.9 + With built-in bias diode 1 4 B 3 D _ 0.1 0.4 + E F G H I J K 2.8+0.2/-0.3 _ 0.2

KTK920T

Abstract: fet diode
Contextual Info: SEMICONDUCTOR KTK920T TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR Tuner FEATURES E Low loss at on state Typ 1dB@1GHz B DIM MILLIMETERS _ 0.2 A 2.9 + With built-in bias diode 1 4 B 3 D _ 0.1 0.4 + E F G H I J K 2.8+0.2/-0.3 _ 0.2

Contextual Info: PD - 95173A IRG4BC30WPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter

KTK921

Abstract: KTK921U fet diode diode 1GHz
Contextual Info: SEMICONDUCTOR KTK921U TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR/DVD/Set Top Box Tuner FEATURES Low loss at on state Typ 1dB@1GHz E M With built-in bias diode 4 2 3 D J 1 H L C A Gate 3.3V operating M B N N K DIM A B C D E H

IRG4PH50K

Abstract: IRGPH50K IRGPH50M
Contextual Info: PD - 9.1576 IRG4PH50K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C ● High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V, TJ = 125°C, VGE = 15V ● Combines low conduction losses with high switching speed

KTK920U

Contextual Info: SEMICONDUCTOR KTK920U TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR Tuner FEATURES Low loss at on state Typ 1dB@1GHz E M B M 4 2 3 D J 1 H L C A With built-in bias diode N N K DIM A B C D E H J K L M N MILLIMETERS _ 0.20 2.00 +

IRG4BC30WPBF

Contextual Info: PD - 95173A IRG4BC30WPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter