CGC SWITCH Search Results

U1899

Abstract: U1897 2n43 U1898
Contextual Info: U l897 -U 1899 CA LO GI C CORP 4ÖE ] „ •§ D D D 0 4D 1 fl ■ CGC N-Channel JFET Switch CORPORATION T -Î 9 -Z 5 U18S7-U1899 ABSO LU TE MAXIMUM RATINGS Ta = 25°C unless otherwise specified) FEATURES • Low Insertion Loss • No Error or Offset Voltage Generated By Closed Switch

c331 transistor

Contextual Info: international ri“ HlRectifier P D -9.1024 IRGPC50M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-ioss rating includes all 'tail" losses • Optimized for medium operating frequency 1 to

IRGPH50K

Abstract: IRG4PH50K IRGPH50M
Contextual Info: PD - 9.1576 IRG4PH50K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C ● High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V, TJ = 125°C, VGE = 15V ● Combines low conduction losses with high switching speed

KTK921

Abstract: KTK921U fet diode diode 1GHz
Contextual Info: SEMICONDUCTOR KTK921U TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR/DVD/Set Top Box Tuner FEATURES Low loss at on state Typ 1dB@1GHz E M With built-in bias diode 4 2 3 D J 1 H L C A Gate 3.3V operating M B N N K DIM A B C D E H

IRG4PH50K

Abstract: IRGPH50K IRGPH50M
Contextual Info: PD - 9.1576 IRG4PH50K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C ● High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V, TJ = 125°C, VGE = 15V ● Combines low conduction losses with high switching speed

IRG4BC30WPBF

Contextual Info: PD - 95173A IRG4BC30WPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter

Contextual Info: PD-94313D IRG4MC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed Operation 3 kHz - 8 kHz High Operating Frequency Switching-loss Rating includes all "tail" losses

s21 diode

Abstract: FS21
Contextual Info: SEMICONDUCTOR KTK920BT TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR Tuner FEATURES E Low loss at on state Typ 1dB@1GHz B DIM MILLIMETERS _ 0.2 A 2.9 + With built-in bias diode 1 4 B F A C 3 2.8+0.2/-0.3 _ 0.2 1.9 + _ 0.05 0.16 +

diode 1GHz

Abstract: KTK920BU
Contextual Info: SEMICONDUCTOR KTK920BU TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR Tuner FEATURES Low loss at on state Typ 1dB@1GHz E M B M 4 2 3 DIM A B C D E H J K L M N D J 1 H L C A With built-in bias diode N K N MILLIMETERS _ 0.20 2.00 +

all transistor IRF 310

Abstract: 035H IRFPE30 IRG4PC40WPbF Transistor IRF 044
Contextual Info: PD -95183 IRG4PC40WPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter

IRG4BAC50W

Contextual Info: PD -93769 PROVISIONAL IRG4BAC50W INSULATED GATE BIPOLAR TRANSISTOR C Features • Designed expressly for switch-mode power supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

IRG4PSC71U

Abstract: T5 transistor TO-247
Contextual Info: PD - 91681A IRG4PSC71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter

Contextual Info: Bulletin I27236 07/06 GA200SA60UP Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: PD - 95429A IRG4BC40WPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter

IC OZ 9936

Abstract: to262 pcb footprint IRG4BH20K-L AN-994
Contextual Info: PD -93961 IRG4BH20K-L Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed

035H

Abstract: IRFPE30 IRG4PH40
Contextual Info: PD - 95187 IRG4PH40UPbF Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD -95636 IRG4IBC20WPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • 2.5kV, 60s insulation voltage † • Industry-benchmark switching losses improve efficiency of all power supply topologies

KTK920U

Contextual Info: SEMICONDUCTOR KTK920U TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR/DVD/Set Top Box Tuner FEATURES Low loss at on state Typ 1dB@1GHz E M M B 4 2 3 DIM A B C D E H J K L M N D J 1 H L C A With built-in bias diode N N K MILLIMETERS

Transistor BC 457

Abstract: bc 457 3000 0442 bc 457 datasheet IRF530S IRG4BC40WL IRG4BC40WS IRL3103L DSA0031076
Contextual Info: PD - 95861 IRG4BC40WS IRG4BC40WL INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

600V igbt dc to dc boost converter

Abstract: IRG4IBC30W transistor 10A
Contextual Info: PD 91791A IRG4IBC30W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • 2.5kV, 60s insulation voltage V • Industry-benchmark switching losses improve efficiency of all power supply topologies

m5x0.8

Abstract: ge 142 GA200NS61U
Contextual Info: PD -94347 GA200NS61U High Side Switch Chopper Module Ultra-FastTM Speed IGBT IGBT INT-A-PAK Features 3 • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

GA75TS60U

Contextual Info: PD -5050 PRELIMINARY "HALF-BRIDGE" IGBT INT-A-PAK GA75TS60U Ultra-FastTM Speed IGBT Features VCES = 600V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

IRG4MC50F

Contextual Info: PD -94274A IRG4MC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses

Contextual Info: PD - 95782 IRG4BC20W-SPbF INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies