CFY 18 Search Results

GaAs FET cfy 19

Abstract: CFY 35-20 F1393 f1394 GSO05553 Q62702-F1393 Q62702-F1394 smd code marking 814 cfy 19
Contextual Info: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393

CLY 30

Abstract: cfy siemens CLYS MW-6 cly5
Contextual Info: Transistoren Transistors AIGaAs/GaAs HEMTs AIGaAs/GaAs HEMTs Type Maximum Ratings Characteristics TA = 25 °C Package Lead Code V J'bs J'gs V h mA Aot mW 8m mS F dB CFY 77-08 3.5 2 60 180 65 0.7 10.5 12 MW-4 3 CFY 77-10 3.5 2 60 180 65 0.9 10 12 MW-4 3 :

HEMT marking K

Abstract: marking t54 CFY 18 CFY77-08 CFY77-10 Q62702-F1549 Q62702-F1559 cfy 14 siemens marking code 51C HEMT
Contextual Info: SIEMENS AIGaAs / InGaAs HEMT CFY 77 D a t a s h e e t Features ‘ Very low noise ‘ Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions!

GaAs FET cfy 14

Abstract: marking code s22 GPS05559 Q62703-F97 MARKING code GM SOT 323 SMD Transistor Marking Code 71 SOT 23 smd transistor cfy P-SOT-143-4-1 GaAs FET cfy 19
Contextual Info: GaAs FET CFY 30 Data Sheet • Low noise Fmin = 1.4 dB @ 4 GHz • High gain (11.5 dB typ. @ 4 GHz) • For oscillators up to 12 GHz • For amplifiers up to 6 GHz • Ion implanted planar structure • Chip all gold metallization • Chip nitride passivation

CFY65

Abstract: CFY 65 siemens 230 97 o VXM05208
Contextual Info: SIEMENS AIGaAs/GaAs HEMT CFY 65 • Very low noise F = 1.2 dB max. at 12 GHz • Very high gain (G a = 11.5dB typ. at 12 GHz) • For low-noise front-end amplifiers up to 20 GHz • For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: 15 GHz GaAs-FET Buffered Oscillator Application Note No. 010 A buffered stable oscillator has been developed using a parallel feedback circuit, two CFY 35 GaAs-field effect transistors and a dielectric resonator. In addition a spacer for a high resonator quality-factor is added. The design goals for this oscillator are high

Contextual Info: SIEMENS CFY 35 GaAs FET Features • Low noise • High gain • Fo r lo w -noise front end am plifiers • Fo r D B S dow n co nverters 5:1 E S D : E le c tro sta tic d is c h a rg e se n sitive de v ice , o b se rv e handling pre ca utio ns! Type Marking

MMIC Amplifier Micro-X marking 420

Abstract: x-band microwave fet cfy 14 BFy 90 transistor guide selection microwave transistors BFY193 transistor C 5611 transistor "micro-x" "marking" 3 GaAs Amplifier Micro-X micro-x 420 "Microwave Diodes"
Contextual Info: HiRel Discrete & Microwave Semiconductors Introduction and Type Overview Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 2 2 Introduction to HiRel and Space Qualified Devices 2 2.1 General 2 2.2 Silicon Devices 3 2.3 GaAs Devices

727 diode

Abstract: 716 transistor diode 716 BFY 34 transistor
Contextual Info: GaAs Components HiRel Discretes and Microwave Semiconductors 11 HiRel Discretes and Microwave Semiconductors Table of Contents Title Component Types Package Types Page 11.1 Preliminary Remarks 716 11.2 Introduction to HiRel and Space Qualified Devices 716

NTSC Decoders

Abstract: 0587g CFY 18
Contextual Info: Philips Semiconductors Application Note Digital interfaces for component video signals AN ETV/IR89126 Author: A. H. Nillesen Several coding parameters have to be specified for interconnecting the digital component video signals YD, UD and VD between several

SIEMENS 230 92 O

Abstract: siemens gaas fet gaas fet marking a FET GAAS marking a CFY 18 siemens 230 98 O siemens 230 99 o CFY30 S11 SIEMENS
Contextual Info: SIEMENS CFY30 GaAs FET Datasheet * Low noise Fmjn= 1.4 dB @ 4 G H z * High gain ( 11.5 dB typ. @ 4 G H z) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted planar structure * Chip all gold metallization * Chip nitride passivation

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W

GaAs pHEMT LOW SOT-343

Abstract: CLY 2
Contextual Info: GaAs Components Selection Guide 2 Selection Guide GaAs RF-Transistors, MMICs and Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

CFY30

Abstract: CFY 18
Contextual Info: SIEMENS CFY30 GaAs FET Datasheet * Low noise Fw„ = 1.4 dB @ 4 G H z * High gain (11.5 dB typ. @ 4 G H z) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted planar structure * Chip all gold metallization * Chip nitride passivation

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

transistors BC 543

Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Contextual Info: number : EN5111 Overview Package Dimensions The LC89970 and LC89970M are CCD delay lines for PAL television systems. It incorporates a comb filter for chrominance signal and a 1 H delay line for luminance signal. unit: mm 3059-DIP22S Structure • NMOS + CCD

aah1

Abstract: at9 am NJU6437 NJU6437C IC AAH1 1/TDA 7665
Contextual Info: C3R<g] NJU6437 1 / L C D K 5 -f A g| NJUB437I*, W* f J W r <DLCD£1/4j' i^- T S H & T S L C D K tA iv - - e f o H D K 5 - ilf W » h i - “ r n ' i , 4 K 5-fn" & t> '3 2 h " ^-fn" I H j j T ' 12 8 ttf" ^ h ^ r l g U b f 5 CI ¿ * i T ? é S f . * fc , NJUB437(W WWIMSK!DSi^(c«S-e-r.

61512

Abstract: CFY 18 K20-K21
Contextual Info: TISP61511D, T1SP61512P DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS Copyright 1997, Power Innovations Limited, UK JU LY 1395 - REVISED SEPTEM BER 1997 PROGRAMMABLE SLIC OVERVOLTAGE PROTECTION Dual Voltage-Programmable Protectors.

NMT Audio FILTER ARRAY

Abstract: FX316 XTAL 4000 nmt F 108 046 FX316LH 12TH FX316J FX316LG lg block diagram Si7101
Contextual Info: OAJHl C CM L Sem iconductor Products ~T~ 7 5 - 1 7 * / 3 PRODUCT INFORMATION CONSUMER MICROCIRCUITS F X 316 4SE D N M T Audio Filter Array 237437b DDGD247 4 ICMCR Publication D/316/4 December 1989 Provisional Issue Features/Applications • Cellular Radio Audio Processing

Contextual Info: OAJHl C CM L Sem iconductor Products ~T~ 7 5 - 1 7 * / 3 PRODUCT INFORMATION C O NS U M E R M I C R O C I R C U I T S FX316 N M T Audio Filter Array 4SE D 2 3 7 4 3 7 b D D G D 24 7 4 ICMCR Publication D/316/4 December 1989 Provisional Issue Features/Applications

Contextual Info: ROHM CO L TD 40E D m 7 f l 2 f l cm 0 0 0 4 0 3 ‘i IC /IC s for OA Applications B ¡K 1 H I R H M BA6580DK ~ F D D f f l U - K ^ 'f h77> 7 ° S' 2 - 2 9 R ead /W rite Am plifier for FDD ^ •J F ^ S ^ /'D im e n s io n s Unit : mm rThÈÌC FDD ffl 'J - K / 7 -f S

Contextual Info: AIC1845 Regulated 5V Charge Pump In SOT-23 „ DESCRIPTION „ FEATURES The AIC1845 is a micropower charge pump z Ultralow Power: IIN = 13 A Regulated 5V ±4% Output Voltage z Output Current: 100mA VIN =3.3V output. The input voltage range is 2.7V to 5.0V.

Contextual Info: AIC1845 Regulated 5V Charge Pump In SOT-23 DESCRIPTION FEATURES Ultralow Power: IIN = 13µA Regulated 5V ±4% Output Voltage The AIC1845 is a micropower charge pump Output Current: 100mA VIN =3.3V output. The input voltage range is 2.7V to 5.0V. 110mA (VIN =3.6V)