CEV CODE Search Results

Contextual Info: ECX-6027-17.664M-CEV RoHS Pb PLEASE NOTE: Due to the inherent proprietary nature of custom part numbers, certain parameters are intentionally excluded from this specification sheet. ECX-6027 -17.664M - CE V Series Ecliptek Custom Crystal Vinyl Sleeving Vinyl Sleeving

Contextual Info: Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. FAMILY LEAD CODE hFE VcBO v CEO v EBO ICBO i * vCB0 (V) (V) MIN *VCES MIN (V) (nA) MIN ‘ •c e s "'CEV @ v CE @ ic (V) (V) (mA) VCE(SA T)@ 'C Cob 00 (mA) *hfe(1kHZ) MIN MAX (PF) *Crb MAX h NF

Contextual Info: Small signal Transistors TO-92 Case Continued TO-92 TYPE NO. FAMILY LEAD CODE v CBO v CEO v EBO •CBO v CBO (V) 00 (V) MIN *VCES MIN MIN *'CEV (nA) 0 V CE h F•6 00 00 *CES ® ic <mA) 00 <mA> *hfc<1kHZ) MIN MAX (pF) *Crb MAX MPS3710 NPN LOW NOISE

BC548 BH

Abstract: BC547 NPN Transistor BC547B npn bc338 signal transistor transistor MPSA77 BC546B SOT23 transistor low noise pnp
Contextual Info: Small Signal Transistors U.S Specifications Preferred Series SOT-23 Case, 350mW (Continued on next page) TYPE NO. BVCBO BVCEO BVEBO *BVCES ICBO @ *I CEV @ VCB (V) (V) (V) (V) (nA) MIN MIN MIN MAX hFE @ VCE @ IC (V) (mA) VCE (SAT) @ IC toff Cob fT (pF) (MHz)

n3904

Abstract: 2N3706 2N4289 "low noise" npn QDD2421 2n4287
Contextual Info: Small Signal Transistors TO-92 Case TO-92 TYPE NO. FAMILY LEAD CODE VCBO v CEO v EBO •CBO ä V c B C nA (V) (V) (V) (V) '■c e s *VCES *'CEV MIN MIN MIN MAX vCE © l c v C E (S i L T ) 'C c ob h FE (V) (mA) (V) (mA) ‘hfe(1 kHZ) MIN MAX NF ‘off

CMPZ4124

Abstract: CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B
Contextual Info: Small Signal Transistors U.S Specifications Preferred Series SOT-23 Case, 350mW (Continued on next page) b v Ce o b v ebo •SVcES 'CBO VCB *'CEV ® VCE (V) (V) (V) (V) (nA) j MIN M.N MIN MAX 1 hFE @ IC ® VCE (mA) MIN 1 General Purpose Amplifiers/Switches

7060a

Abstract: TOP3 package bup transistor
Contextual Info: S IE M E N S BUP 101 SIRET Siemens Ring Emitter Transistor VCE = 1000 V lc =15 A • • • N channel B rea kdo w n-p roo f Package: TO-218 AA TOP-3 ') Type Ordering code BUP 101 C 6 7060-A 1000-A 2 Maximum Ratings at T{ = 25 °C, unless otherw ise specified.

2N6649

Abstract: 2N6648 2N6650
Contextual Info: Datasheet 2N6648 2N6649 2N6650 • ■ TM vSemiconductor G V I T iQ 1 Corp. PNP SILICON POWER DARLINGTON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors JEDEC TO-3 CASE

diode 1BL

Abstract: WESTINGHOUSE dc motor transistor fag 35 powerex kd powerex kd22 kd2245 kd221K WESTINGHOUSE transistor 1BL diode
Contextual Info: y i 7 294621 POWERËX INC fag D e | TaiMtai OODOTEb 1 | Dual Darlington TRANSISTOR Modules 75 Amperes 4 5 0 /1 OOO Volts Dim A B C D E F G H K M Inches 3.700 Max . 3.150+ .020 .79 1.34 Max 1.06 .315 1.220 Max .256 .571 € Millimeters 94 Max 80 ± 0 .5 20

Westinghouse diode

Abstract: kd32 1B2 diode
Contextual Info: 7294621 POWEREX INC 150 Amperes 4 5 0 /1 0 0 0 Volts b2 DE I 7E14tHl 0 0 0 D C134 Û f _ 0 T-33-35 Dual Darlington TRANSISTOR Modules Dim A B C D E F G H J K L M N P Inches 3.740 Max 3.150+ .010 .90 Dim A B C D E F G H J K L M N P Q R S T U Inches 4.250 Max

transistor 152 M

Abstract: ac121 TRANSISTOR K 1507 siemens ac121 transistor 3403V AC121 germanium transistor transistor ac 127 transistor ac 152 ac127 Transistor 1507
Contextual Info: BSC D • 0235bG 5 0 Q 0 4 D 2 el 3 W Ê S IE 6 ’ / T ^ ? - / / PNP Germanium Transistors - S IE M E N S — A K T I E N 6 E S E L L S C H A F - A— 1 - 2 for AF, driver and output stages of medium performance

MJE13007A

Contextual Info: Datasheet MJE13007A C G I H iD I Semiconductor Corp. NPN SILICON POWER TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-220 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SE M IC O N D U C TO R M J E 1 3 0 0 7 A type is a Silicon NPN Power Transistor designed for high voltage,

CJD3055

Contextual Info: Central H CJD2955 PNP CJD3055 NPN v l • «§■ W m m Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The C EN TR A L SEM ICO NDUCTO R CJD2955, CJD3055types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a

transistor ss

Abstract: CJD3055
Contextual Info: CJD2955 CJD3055 Central PNP NPN Sem icon du ctor Corp. COM PLEM ENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CJD2955, CJD3055 types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a

CJD122

Abstract: CJD127 transistor C4 016
Contextual Info: Central" C JD 122 NPN C JD 127 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD122, CJD127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low

2N3715

Abstract: 2N2716 2N3713 2N3714 2N3716 lc50a
Contextual Info: Data Sheet 2N3713 2N3714 2N3715 2N3716 Central" Sem iconductor Corp. NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-3 CASE Manufacturers of World Class Discrete Semiconductors d e s c r ip t io n

marking cev

Contextual Info: Central" CZTUX87 Semiconductor Corp. SURFACE MOUNT HIGH VOLTAGE NPN SILICON POWER TRANSISTOR DESCRIPTION: POWER The CENTRAL SEMICONDUCTOR CZTUX87 type is a NPN Silicon Power Transistor epoxy molded in a surface mount package, designed for high voltage switching applications.

2N6578

Abstract: BM-500 2N6576 2N6577
Contextual Info: Data Sheet 2N6576 2N6577 2N6578 Central Sem iconductor Corp. NPN SILICON POWER DARLINGTON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-3 CASE Manufacturers of World Class Discrete Semiconductors

CJD3055

Abstract: CJD2955
Contextual Info: Central“ CJD2955 PNP CJD3055 NPN Sem iconductor Corp- COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD2955, CJD3055 types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a

2N3053 NPN transistor

Abstract: SILICON TRANSISTOR 2N3053 transistor 2n3053 2N3053 2N3053 transistor 2N3053A cev code
Contextual Info: Data Sheet 2N3053 2N3053A Cont nlll • «r ri NPN SILICON TRANSISTOR Sem iconductor Corp. 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-39 CASE M anufacturers of W orld C lass Discrete Semiconductors DESCRIPTION

CJD127

Abstract: CJD122
Contextual Info: Central" Semiconductor Corp. CJD122 NPN CJD127 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD122, CJD127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low

44C6

Contextual Info: C JD 122 C JD 127 Central Sem icon du ctor Corp. NPN PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD122, CJD127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low

Contextual Info: j à s t Æ Ê T * c g iw c ii H»nilr«nfliirffir coro. CJD122 NPN CJD127 PNP flnWlIII^NniVBwWSwl COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DftKI!" g8FW DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD122, CJD127 types are Complementary Silicon Power Darlington Transistors manufactured

CJD112

Abstract: CJD117 545C0 Scans-00156429
Contextual Info: Central” semiconductor Corp. CJD112 NPN CJD117 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD112, CJD117 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low