CEC PNP TRANSISTOR Search Results

Contextual Info: Philips Semiconductors bbS3^31 DD315^I1 3bT WMAPX Product specification PNP 4 GHz wideband transistor BFQ54T N A PIER PHILIPS/DISCRETE b^E J> PINNING DESCRIPTION PNP transistor in a plastic SOT37 package. PIN 1 base It is primarily intended for use in MATV and microwave amplifiers

philips bfq23

Abstract: BFQ23 BFR91A the pin function of ic 7423 BFR91A transistor transistor 9634
Contextual Info: Philips Sem iconductors ^ 5 3 ^ 3 1 0 D 3 1 5 13 T7T H A P X Product specification PNP 5 GHz wideband transistor BFQ23 N AMER PHILIPS/DISCRETE DESCRIPTION PINNING PNP transistor in a plastic SOT37 envelope, primarily intended for use in UHF and microwave amplifiers,

D 1398 Transistor

Abstract: BFG32 BFG96 DD311
Contextual Info: Phillp^em iconductore _ bbS3131 ÜD3114b 712 Product specification M A P X Ê PNP 5 GHz wideband transistor BFG32 PINNING DESCRIPTION PNP transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for application in wideband amplifiers, such as MATV

2493 transistor

Abstract: BFG35 BFG55 UBB337
Contextual Info: •I Philips Sem iconductors — ^ 53^131 □ 0 iMfi3 b T T 3 H A P X N A PIER PHI LIP S /D IS C R ET E bVE p Product soeciflcation PNP 4 GHz wideband transistor FEATURES ^ BFG55 PINNING • High output voltage capability PIN • High gain bandwidth product

cec PNP transistor

Contextual Info: Die no. B-93 PNP medium power transistor These are epitaxial planar PNP silicon transistors. Dimensions Units : mm SST3 Features available in a SST3 (SST, SOT-23) package, see page 300 collector-to-emitter breakdown voltage, BVCE0 = 60 V (min) at Iq =1.0 mA

BCP869

Abstract: marking chc BC869 BC869-16 BC869-25
Contextual Info: BCP869 PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES The BCP869 is designed for application required for high current maximum -1 A and low voltage (maximum -20 V).

SOT89 marking cec

Abstract: MARKING 93 SOT89 SOT89 MARKING CODE B2 BC868 BC869 BC869-16 BC869-25 PNP TRANSISTOR "SOT89" PHILIPS BC869 BL SOT89
Contextual Info: Philips Semiconductors Product specification PNP medium power transistor BC869 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 20 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Low voltage, high current LF applications.

SOT89 marking cec

Contextual Info: Philips Semiconductors Product specification PNP medium power transistor FEATURES BC869 PINNING • High current max. 1 A PIN • Low voltage (max. 20 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Low voltage, high current LF applications.

cec PNP transistor

Abstract: pdta124et transistor PDTA124ET
Contextual Info: Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124ET FEATURES • Built-in bias resistors R1 and R2 typ. 22 kU each • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space

transistor MW 882

Abstract: TRANSISTOR b 882 p 882 transistor transistor D 882 p transistor 882 transistor D 882 PNP TRANSISTOR SOT54 PDTA144ES
Contextual Info: Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA144ES FEATURES • Built-in bias resistors R1 and R2 typ. 47 kO each • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space

HDMI SWITCH SCHEMATIC

Abstract: 1117 regulator PI3HDMI1210 eeprom schematic for tv resistor 15k BAW56 transistor RxSense hdmi type d 1.4 pcb layout schematic eeprom for tv usb 2.0 to hdmi circuit
Contextual Info: 207 PI3HDMI1210 PI3HDMI1210 Demo Board Rev.A User Manual Introduction This user manual describes the components and the usage of PI3HDMI1210 demo Board Rev.A. Figure 1: Top View of PI3HDMI1210 Demo Board Figure 2: Bottom View of PI3HDMI1210 Demo Board Page 1 of 11

SOT89 marking cec

Abstract: PNP TRANSISTOR SOT89 MARKING 93 SOT89 sot89 marking 93 marking chc SOT89 BC868 BC869 BC869-16 BC869-25
Contextual Info: Philips Sem iconductors Product specification PNP medium power transistor BC869 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 20 V). APPLICATIONS DESCRIPTION 1 em itter 2 collector 3 base • Low voltage, high current LF applications.

bfq252

Contextual Info: • Philips Sem iconductors bbS3T31 □031731 757 M A P X PNP 1 GHz video transistors ^ £ N DESCRIPTION Product specification BFQ252; BFQ252A AMER PHILIPS/DISCRETE b^E D PINNING PNP silicon epitaxial transistor in a SOT32 TO-126 package, with emitter-ballasting resistors and a

Contextual Info: Philip^emiconductors • bbSBTBl D O B E l ? 1! OEb MAPX Product specification PNP 1 GHz switching transistor “ MPS3640 N AMER PHILIPS/DISCRETE DESCRIPTION b^E T> PINNING PNP general purpose switching transistor in a SOT54 TO-92 envelope. PIN 1 DESCRIPTION

BC869

Abstract: MARKING chc 1a50 BC869-16 BC869-25 BCP869 CHC SOT89
Contextual Info: BCP869 BC869 SOT-89 TRANSISTOR PNP FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: 1. BASE 500 mW (Tamb=25℃) -2 A -32 V 2. COLLECTOR 3. EMITTER Operating and storage junction temperature range TJ, Tstg: -65℃ to +150℃

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors BC869 SOT-89 TRANSISTOR PNP FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: 1. BASE 500 mW (Tamb=25℃) -2 A -32 V 2. COLLECTOR

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BC869 Features • • High current max. 1.0A Low voltage (max. 20V) PNP Medium Power Transistors Maximum Ratings

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L BC869 TRANSISTOR PNP 1. BASE FEATURES  NPN Complement to BC868  Low Voltage  High Current 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - JANUARY 1996 _ O FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UP TO 3W * HIGH h FE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE BC868 NPN PARTMARKING DETAILS -

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors BC869 ＳＯＴ－８９ TRANSISTOR（PNP ） FEATURES Power dissipation PCM : 1.35 W （Tamb=25℃） Collector current ICM : -2 A Collector-base voltage V BR CBO : -32

Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 -JANUARY 1996 O_ FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UP TO 3W * HIGH hFE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE - BC868 NPN PARTMARKING DETAILS -

philips bfq32

Abstract: BFQ32 BFR96 philips PNP transistor 263 transistor bfr96 BFR96 BFR96 pins resistance GHz PNP transistor BFQ-32
Contextual Info: Product specification Philips Sem iconductors 7=v3/ -JZ3 PNP 4 GHz wideband transistor PH IL IPS INTERNATIONAL DESCRIPTION BFQ32 7 1 1 0 0 2 b Ü Ü 4 S M 2 Ü 41D H I P H I N PINNING PNP transistor in a plastic SOT37 envelope, intended for use in UHF applications such as broadband

cec "sot89"

Abstract: BC869 SOT89 chc CHC SOT89
Contextual Info: Not Recommended for New Design Please Use BCX6925 SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC869 ISSUE 4 - JANUARY 1996 ✪ FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UP TO 3W * HIGH hFE AND LOW SATURATION VOLTAGE

BC869

Abstract: cec "sot89" BC868 BC869-16 BC869-25 FMMT549
Contextual Info: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC869 ISSUE 4 - JANUARY 1996 ✪ FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UP TO 3W * HIGH hFE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE - C BC868 NPN PARTMARKING DETAILS -