CEB09 Search Results

CEB09 Datasheets (1)

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Chino-Excel Technology

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CEB09N6		Chino-Excel Technology	N-channel Enhancement Mode Field Effect Transistor TO220/TO263 Package	Original	PDF	41.75KB	5

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Adam Technologies Inc PCE-B-09 CONNECTOR, RECEPTICAL WITH HOOKS, 9 POSITION, 2.54MM, .100 PCB, SIDE ENTRY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	PCE-B-09	Bulk		12 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 $0.50	Get Quote
SICK AG C4C-EB09030A10000 SAFETY LIGHT CURTAINS, C4C-EB09030A10000
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RS	C4C-EB09030A10000	Bulk		5 Weeks	1	1 $3870.45 10 $3870.45 100 $3870.45 1000 $3870.45 10000 $3870.45	Get Quote

CEB09 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: CEP09N7A/CEB09N7A CEF09N7A N-Channel Enhancement Mode Field Effect Transistor FEATURES VDSS RDS ON ID @VGS CEP09N7A Type 700V 1.2Ω 8A 10V CEB09N7A 700V 1.2Ω 8A 10V CEF09N7A 700V 1.2Ω 8A e 10V D Super high dense cell design for extremely low RDS(ON).	Original	cep09n7a/ceb09n7a cef09n7a cep09n7a ceb09n7a +4o-263 o-220 o-220f o-220/263	PDF
CEF09N6 Abstract: CEP09N6 CEB09N6 Contextual Info: CEP09N6/CEB09N6 CEI09N6/CEF09N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP09N6 600V 1.2Ω 9A 10V CEB09N6 600V 1.2Ω 9A 10V CEI09N6 600V 1.2Ω 9A 10V CEF09N6 600V 1.2Ω 9A e 10V D Super high dense cell design for extremely low RDS(ON).	Original	cep09n6/ceb09n6 cei09n6/cef09n6 cep09n6 ceb09n6 +6cei09n6 cef09n6 o-220 o-263 o-262 o-220f	PDF
CEF09N7G Abstract: cef09n7 CEP09N7 CEB09 ceb09n7g Contextual Info: CEP09N7G/CEB09N7G CEF09N7G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES VDSS RDS ON CEP09N7G Type 700V 1Ω 9A ID @VGS 10V CEB09N7G 700V 1Ω 9A 10V CEF09N7G 700V 1Ω 9A d 10V D Super high dense cell design for extremely low RDS(ON).	Original	cep09n7g/ceb09n7g cef09n7g cep09n7g ceb09n7g +7o-263 o-220 o-220f o-220/263 cef09n7 cep09n7 ceb09	PDF
Contextual Info: CEP09N6/CEB09N6 Jul. 2002 4 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 600V , 9A ,RDS ON = 1.2 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.	Original	cep09n6/ceb09n6 o-220 o-263	PDF
CEP50N06 Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139 Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223	Original	o-251/to-252 o-220/to-263 ot-23 ot-223 +13ot-89 2928-8j o-220fm cep50n06 cep83a3 equivalent cep83a3 cef02n6a cep6355 fqpf8n60c equivalent cef04n6 equivalent cep63a3 cep20n06 cep76139	PDF