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    CE 470 10V Search Results

    CE 470 10V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK065U65Z
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 38 A, 0.065 Ohm@10V, TOLL Datasheet
    TK5R1P08QM
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK Datasheet
    TK190E65Z
    Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 650 V, 0.19 Ω@10V, TO-220, DTMOSⅥ Datasheet
    TK5R1A08QM
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS Datasheet
    TK155E65Z
    Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 650 V, 0.155 Ω@10V, TO-220, DTMOSⅥ Datasheet

    CE 470 10V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2n3391 complement

    Abstract: 2N2712 2N2713 2N3391 2N2925 2N2711 2N2714 2N2923 2N2924 2N2926
    Contextual Info: NPN SILICON SIGNAL G EN ER A L PURPOSE AMPLIFIERS AND SWITCHES V CE iat Type 2N2711 30*90 2N2712 75-225 2N2713 30-90 2N2714 75-225 2N2923 90-180 ' 2N2924 150-300 < 2N2925 235-470' 2N2926 35-470 ’ 2N3390 Ccb @ 10V 1 MHz Typical (P'f) @ 1Qmi, Min. (V) @ 10mA


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    2n27112n27122n27132n2714+9150ma2n29232n29242n29252n531d2n53112n3391 complement2n33912n2926 PDF

    beta transistor 2N2222

    Abstract: 2N2924 equivalent beta dc of transistor 2N2222 2N2925 equivalent 2N2714 1N9148 beta transistor 2N2712 2N2905 2N2219 2n3390 equivalent beta transistor 150
    Contextual Info: N PN SILICON SIG N AL G E N E R A L P U R P O S E A M P LIF IER S A N D SWITCHES V CE iat Type 2N2711 30*90 2N2712 75-225 2N2713 30-90 2N2714 75-225 2N2923 90-180 ' 2N2924 150-300 < 2N2925 235-470' 2N2926 35-470 ’ 2N3390 400-800 2N3391 250-500 Ccb @ 10V


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    2n27112n27122n27132n2714+15150ma2n29232n29242n29252n3976m23p-xs16beta transistor 2n22222n2924 equivalentbeta dc of transistor 2n22222n2925 equivalent1n9148beta transistor 2n27122n2905 2n22192n3390 equivalentbeta transistor 150 PDF

    BF180

    Abstract: bf181 BF200 8F180 hg1e BF182 tranzystor J BF181 CE25 T072
    Contextual Info: T R A N Z Y S T O R Y n-p-n * BF180, BF181, BF200 14 - 74/2 SWW 1156-214 T ra n z y sto ry k rz em o w e p la n a r n e m a le j m ocy b a rd zo w ie lk ie j cz^stotliw oáci. T ra n z y sto r BF180 je st p rz ez n ac zo n y do sto so w an ia w r e gu lac y jn y ch sto p n iac h w zm acn iaczy U H F w glow icach


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    bf180bf181bf2008f180+6hg1ebf182tranzystorj bf181ce25t072 PDF

    A 107 transistor

    Abstract: BF287
    Contextual Info: BF 287 S I L I C O N P L A N A R NPN AM MIXER-OSCILLATOR AND AM-FM AMPLIFIER The B F 287 is a silicon plan ar NPN tran sisto r in a TO -72 metal ca se . It is prim arily intended for use in the AM m ixe r-o scillato r stage and as IF am plifier of AM -FM radios.


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    bf287a 107 transistor PDF

    Contextual Info: N AMER PHILIPS/DISCRETE bBE D • bbSBIBl 002flflS4 b7fl * A P X BLU60/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope prim arily intended fo r use in mobile radio transmitters in the 470 MHz communications band. Features


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    002flfls4blu60/12ot-119 PDF

    BTP 10/400

    Abstract: C3V9 5T BTP 10/200 BZP C3V3 tyrystor btp 10/400 bzp 650 c10 BZP 683 C6V8 tyrystory BYBP 10-200 BB109
    Contextual Info: DIODY I TYRYSTORY W ykaz oznaczeñ param etró w technicznych Cp pojemnoáó diody przy okreálonym napigciu wsteeznym W . V stoaunek pojemnoáci ÜR2/ di j» krytyczna stromosé naraatania prqdu przewodzenia fp Ip I HJ IPRM IPSM *0 •^GT *0 ZR ÍTT


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    t0220bace95bae795bace95r+16bae795rbade95bae995babe95bae895bav70btp 10/400c3v9 5tbtp 10/200bzp c3v3tyrystor btp 10/400bzp 650 c10bzp 683 c6v8tyrystorybybp 10-200bb109 PDF

    s22b

    Abstract: bf181 s21b b 514 transistor bf 181 bf181 transistor ic s21b J BF181 MAX S21B
    Contextual Info: *BF181 NPN S IL IC O N T R A N S IS T O R , P LA N A R TRANSISTOR NPN S ILIC IU M , PLANAR sfc Preferred device D isp o sitif recommandé The NPN plan transi to r BF 181 is intended for use in U H F converter and oscillator stages television receivers. Le transistor plan NPN BF 181 est destiné à être u tili­


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    bf181s22bs21bb 514 transistor+5bf 181bf181 transistoric s21bj bf181max s21b PDF

    Contextual Info: FILM CAPACITORS ahP ALUMINUM ELECTROLYTIC CAPACITORS KM RADIAL SERIES INTRODUCTION KM Series Radial Lead Aluminum Electrolytic capacitors cover a wide range of values, voltages and temperatures. These capacitors are suitable for industrial and commercial designs requiring


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    PDF

    Contextual Info: KMH Series UNITED CHEMI-CON • Snap Mount ■ Large Capacitance ■ High CV ■ High Ripple ■ +105°C Maximum Temperature The K M H se rie s c a p a c ito rs are the standard 105°C, large ca p a cita n ce , sn ap -in ca p a cito rs from U nited C h e m -C o n . The load life for the K M H se rie s is 2,000 hours at 105°C with the rated ripple


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    kmh25vn103m25x35kmh63vn122m22x25120hzkmh160vn182m30x50+4kmh400vn181m22x50103m25x35h160vn182m30x50h400vn181m22x50 PDF

    capacitor RLA

    Contextual Info: lü iU R G E Alum inum Electrolytic Capacitors F e a tu re • 85°C , s ta n d a r d lo w le a k a g e c u r r e n t se rie s <3§ 3S) • R o H S C o m pliance R LA 85*C R LA 85*C L732(M) L732(M) RLA 220uF 35V 220uF 35V = H = K -SPECIFICATIONS Item s


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    220uf120hz002cvl20hz+210x12capacitor rla PDF

    DG704

    Contextual Info: S G S -TH O M S O N SD1433 IM RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS 470 MHz 12.5 VOLTS CLASS C EFFICIENCY 60% COMMON EMITTER P o ut = 10 W MIN. WITH 8.0 dB GAIN PIN CONNECTION DESCRIPTION The SD1433 is a Class C epitaxial silicon NPN planar transistor designed for driver applications


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    sd1433q07g44sdg704 PDF

    BF470

    Abstract: F506 BF472 Q62702-F498 Q62702-F506 Q62902-B62 Q62902-B63 CBC 548 transistor 2sc 548
    Contextual Info: - 3 1 - 2 3 ISIEû ESC D • ô23SbOS QQQ45G2 PNP Silicon Planar Transistors — SIEMENS AKTIENÛESELLSCHAFi02 BF 470 BF 472 °- BF 4 70 and BF 472 are epitaxial PNP silicon planar transistors in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . The collector is conductively connected to the metallic


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    235bosesellschafi02q62702-f498q62702-f506+9q62902-b63q62902-b6223sbqsqg04504bf470f506bf472cbc 548transistor 2sc 548 PDF

    TRANSISTOR 2SA1076

    Abstract: 2SA1075 2SA1076 TRANSISTOR 2Sa 1075 2SC2526 transistor 2SA TRANSISTOR 2sc2526 transistor 2SA 374 2sc2525 2SA audio POWER TRANSISTORS
    Contextual Info: I? FUJITSU MICROELECTRONICS 374^7^2 F U JIT S U 2SÄ1075 M IC R O E L E C T R O N IC S 374970^ □ 2 S Ä 1076 VaS-tais FUJITSU MICROELECTRONICS i7c oififn SILICON PNP RING E M IT T E k TRANSISTORS 12 AMP, 120 & 160 VOLT DESCRIPTION FEATURES The 2SA1075/2SA1076 are wellsuited for high frequency power


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    2sa10752sa10762sa1075/2sa10762sc25251+92sc2526o-220transistor 2sa1076transistor 2sa 1075transistor 2satransistor 2sc2526transistor 2sa 3742sc25252sa audio power transistors PDF

    Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS Lo w L e a ka g e C u rre n t Low Leakage Current Anti-Solvent Feature I Standard low leakage current series. t i »sssssssssssssssssssssssssss* • KT] V X IS p e c ific a tio n s Item P e rfo rm a n c e C h a ra c te ris tic s


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    10x1210x1610x2016x25+216x3118x35 PDF

    r1270

    Contextual Info: R1270x Series 3A, 34V Step Down DC/DC converter with PLL Synchronization for Automotive Applications NO.EC-299-131029 OUTLINE The R1270x is CMOS-based Step-down DC/DC converter with internal N-channel high side Tr. The ON resistance of the built-in high-side transistor is 0.10 and the R1270x can provide the maximum 3A output


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    r1270xec-299-131029room403room109+210f-1r1270 PDF

    100CC

    Abstract: REA 220 UF 100 WV
    Contextual Info: IHURGE Alum inum Electrolytic Capacitors Features • 85°C, 2,000 - 3,000 hours assured • Standard series for general puipose • RoHS Compliance REA <&§£>_ ? g R E A 85*C R E A M -L 732(M) L 732( 10OuF 50 v 1 00 uF _


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    10oufl20hzmax16l2008/2009+2100ccrea 220 uf 100 wv PDF

    Contextual Info: - H333 ALUMINIUM ELECTROLYTIC CAPACITORS NA SERIES MINIATURIZED TYPE FOR GENERAL PURPOSE CAN SIZE ONE RANK SMALLER THAN N SERIES SPECIFICATIONS Characteristics Item Rated working voltage 6 .3 ~ 1 0 0 V O perating tem perature range - 4 0 ~ + 8 5 °C +/- C a p a c ita n ce tolerance


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    10x1210x1610x2113x22+116x24 PDF

    capacitors MK

    Contextual Info: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS High Ripple Current Series MK Low Impedance Solvent Proof Ripple current compared with LK series Enabled high ripple current by a reduction of impedance at high frequency High reliability withstanding 5000 hours load life at 105 C


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    120hz10x1610x1210x20+1capacitors mk PDF

    Contextual Info: s e MIKRO n Absolute Maximum Ratings Symbol Term Vs Top Supply voltage prim. Input signal voltage High Output peak current Output average current (max.) Collector-Em itter voltage sense across the IGBT Rate of rise and fall of voltage secondary to prim ary side


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    visol12 PDF

    10X10-3

    Abstract: 8X103
    Contextual Info: SMD Aluminum Electrolytic Capacitors VZH F eatures: • 4 - 1 6 0 , 105°C, 2,000-5,000 hours assured • Large capacitance with ultra low impedance capacitors • Designed for surface mounting on high density PC board • RoHS Compliance SPECIFICATIONS Items


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    120hz10x1016x1610x10-3+18x103 PDF

    BF273

    Abstract: BF 273 transistor transistor BF273 ot 273 CE 470 10V transistor J4s bf 107 a transistor bf 254 10.7 MHZ transistor bf 153
    Contextual Info: BF 273 S I L I C O N P L ANA R NPN AM CONVERTER AND AM-FM IF AMPLIFIER The BF 273 is a silicon planar NPN transisto r in a TO -18 epoxy package, intended fo r use in AM converters and IF am plifiers fo r AM and A M /F M radios. ABSOLUTE MAXIMUM RATINGS ^CBO


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    bf273bf 273 transistortransistor bf273ot 273+6ce 470 10vtransistor j4sbf 107 atransistor bf 25410.7 mhztransistor bf 153 PDF

    Contextual Info: CD 110 PT Series 3 000 - 4 000h at 85°C longer life • Standard 85°C CD 287 GC CD 261 LK CD 263 BK lower ESR 105°C CD 110 PT Item Characteristics Operating Temperature Range °C -40 ~ +85 Voltage Range (V) 6,3 ~ 450 Capacitance Range (µF) 0,1 ~ 22 000


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    120hz PDF

    Contextual Info: MCOTS-C-28E-28-HZ Single Output Half-brick a pu d bl va ic n at ce io d n MILITARY COTS DC/DC CONVERTER 16-70V Continuous Input 16-100V Transient Input 28V Output 14A Output 95%@7A/93%@14A Efficiency Full Power Operation: -55°C to +100°C Mil-COTS The MilQor series of Mil-COTS DC/DC converters brings


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    mcots-c-28e-28-hz6-70v6-100v PDF

    Diode marking TY

    Contextual Info: Variable Capacitance Diodes MA2J372 MA372J Silicon epitaxial planar type Unit : mm 1.25±0.1 For UHF and VHF electronic tuners 0.7±0.1 0.35±0.1 1 2.5±0.2 1.7±0.1 0 to 0.1 2 0.5±0.1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o


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    ma2j372ma372jdiode marking ty PDF