CE 470 10V Search Results

2n3391 complement

Abstract: 2N2712 2N2713 2N3391 2N2925 2N2711 2N2714 2N2923 2N2924 2N2926
Contextual Info: NPN SILICON SIGNAL G EN ER A L PURPOSE AMPLIFIERS AND SWITCHES V CE iat Type 2N2711 30*90 2N2712 75-225 2N2713 30-90 2N2714 75-225 2N2923 90-180 ' 2N2924 150-300 < 2N2925 235-470' 2N2926 35-470 ’ 2N3390 Ccb @ 10V 1 MHz Typical (P'f) @ 1Qmi, Min. (V) @ 10mA

beta transistor 2N2222

Abstract: 2N2924 equivalent beta dc of transistor 2N2222 2N2925 equivalent 2N2714 1N9148 beta transistor 2N2712 2N2905 2N2219 2n3390 equivalent beta transistor 150
Contextual Info: N PN SILICON SIG N AL G E N E R A L P U R P O S E A M P LIF IER S A N D SWITCHES V CE iat Type 2N2711 30*90 2N2712 75-225 2N2713 30-90 2N2714 75-225 2N2923 90-180 ' 2N2924 150-300 < 2N2925 235-470' 2N2926 35-470 ’ 2N3390 400-800 2N3391 250-500 Ccb @ 10V

BF180

Abstract: bf181 BF200 8F180 hg1e BF182 tranzystor J BF181 CE25 T072
Contextual Info: T R A N Z Y S T O R Y n-p-n * BF180, BF181, BF200 14 - 74/2 SWW 1156-214 T ra n z y sto ry k rz em o w e p la n a r n e m a le j m ocy b a rd zo w ie lk ie j cz^stotliw oáci. T ra n z y sto r BF180 je st p rz ez n ac zo n y do sto so w an ia w r e gu lac y jn y ch sto p n iac h w zm acn iaczy U H F w glow icach

Contextual Info: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS IV R U /V D > U —X CCD ICC 10 5 C /hSUfcffi O k - ¥ > 7 & 105C Miniaturized, Low im pedance. ♦ *S M FEATURES • 'I'Mitnao M iniaturized. • M m * T > fc° - ¥ > ± Low im ped an ce at 100kH z with se le cte d m aterials.

A 107 transistor

Abstract: BF287
Contextual Info: BF 287 S I L I C O N P L A N A R NPN AM MIXER-OSCILLATOR AND AM-FM AMPLIFIER The B F 287 is a silicon plan ar NPN tran sisto r in a TO -72 metal ca se . It is prim arily intended for use in the AM m ixe r-o scillato r stage and as IF am plifier of AM -FM radios.

Contextual Info: N AMER PHILIPS/DISCRETE bBE D • bbSBIBl 002flflS4 b7fl * A P X BLU60/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope prim arily intended fo r use in mobile radio transmitters in the 470 MHz communications band. Features

Contextual Info: f Z 7 SGS-THOMSON SD1433 ^7#. K M « « ® « ! RF & MICROWAVE TRANSISTO RS UHF MOBILE APPLICATIONS • . ■ . ■ . 470 MHz 12.5 VOLTS CLASS C EFFICIENCY 60% COMMON EMITTER p OUT = 10 W MIN. WITH 8.0 dB GAIN dr l|—^ R> .280 4L STUD M122 epoxy sealed

BTP 10/400

Abstract: C3V9 5T BTP 10/200 BZP C3V3 tyrystor btp 10/400 bzp 650 c10 BZP 683 C6V8 tyrystory BYBP 10-200 BB109
Contextual Info: DIODY I TYRYSTORY W ykaz oznaczeñ param etró w technicznych Cp pojemnoáó diody przy okreálonym napigciu wsteeznym W . V stoaunek pojemnoáci ÜR2/ di j» krytyczna stromosé naraatania prqdu przewodzenia fp Ip I HJ IPRM IPSM *0 •^GT *0 ZR ÍTT

s22b

Abstract: bf181 s21b b 514 transistor bf 181 bf181 transistor ic s21b J BF181 MAX S21B
Contextual Info: *BF181 NPN S IL IC O N T R A N S IS T O R , P LA N A R TRANSISTOR NPN S ILIC IU M , PLANAR sfc Preferred device D isp o sitif recommandé The NPN plan transi to r BF 181 is intended for use in U H F converter and oscillator stages television receivers. Le transistor plan NPN BF 181 est destiné à être u tili­

JD 803

Contextual Info: i Alum inum E lectrolytic Capacitors c Miniature Single-Ended Aluminum Electrolytic Capacitors DESCRIPTION: FEATURES: Series 3481 capacitors exhibit long operating life 2000 hours at 105°C and very low impedance and ESR. They have a higher ripple current rating

Contextual Info: DC/DC Converter VRA_ X D-10WR2 & VRB_(X)D-10WR2 Series 10W, wide input voltage, isolated & regulated output DC/DC converter FEATURES Wide range of input voltage (2:1) Efficiency up to 90% Isolation voltage: 1.5K VDC Output over-voltage protection, short-circuit

CA30

Abstract: 850C
Contextual Info: Specification for Approval NO.: Q/YHC.CA30. 0 7 -1 0 -2 9 Product Name: CA30 Wet Tantalum Capacitor Customer: Type and Specification: All Series_ Material Code of Customer:_ WRITTING CHECKED APPROVALED Dongli BaiPing Zhuying Signature of Approval:

Contextual Info: WRE_S - 3WR2 & WRF_S - 3WR2 Series 3W，WIDE INPUT, ISOLATED & REGULATED DUAL/SINGLE OUTPUT DC-DC CONVERTER FEATURES ● Ultra-Miniature SIP Package ● 2:1 wide input voltage range ● Temperature range: -40°C ~ +85°C ● 3KVDC isolation ● Short circuit protection automatic recovery

WRA0505S-3WR2

Contextual Info: WRA_S - 3WR2 & WRB_S - 3WR2 Series 3W，WIDE INPUT, ISOLATED & REGULATED DUAL/SINGLE OUTPUT DC-DC CONVERTER FEATURES ● Ultra-Miniature SIP Package ● 2:1 wide input voltage range ● Temperature range: -40°C ~ +85°C ● 1.5KVDC isolation ● Short Circuit Protection automatic

Contextual Info: KMH Series UNITED CHEMI-CON • Snap Mount ■ Large Capacitance ■ High CV ■ High Ripple ■ +105°C Maximum Temperature The K M H se rie s c a p a c ito rs are the standard 105°C, large ca p a cita n ce , sn ap -in ca p a cito rs from U nited C h e m -C o n . The load life for the K M H se rie s is 2,000 hours at 105°C with the rated ripple

capacitor RLA

Contextual Info: lü iU R G E Alum inum Electrolytic Capacitors F e a tu re • 85°C , s ta n d a r d lo w le a k a g e c u r r e n t se rie s <3§ 3S) • R o H S C o m pliance R LA 85*C R LA 85*C L732(M) L732(M) RLA 220uF 35V 220uF 35V = H = K -SPECIFICATIONS Item s

DG704

Contextual Info: S G S -TH O M S O N SD1433 IM RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS 470 MHz 12.5 VOLTS CLASS C EFFICIENCY 60% COMMON EMITTER P o ut = 10 W MIN. WITH 8.0 dB GAIN PIN CONNECTION DESCRIPTION The SD1433 is a Class C epitaxial silicon NPN planar transistor designed for driver applications

BF470

Abstract: F506 BF472 Q62702-F498 Q62702-F506 Q62902-B62 Q62902-B63 CBC 548 transistor 2sc 548
Contextual Info: - 3 1 - 2 3 ISIEû ESC D • ô23SbOS QQQ45G2 PNP Silicon Planar Transistors — SIEMENS AKTIENÛESELLSCHAFi02 BF 470 BF 472 °- BF 4 70 and BF 472 are epitaxial PNP silicon planar transistors in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . The collector is conductively connected to the metallic

smd ic marking su

Abstract: VA MARKING
Contextual Info: aa SOLID TANTALUM ELECTROLYTIC CAPACITORS F91 LOW ESR Resin-molded Chip, For SMD For High Frequency n ic k x c o n For Pb Free Specifications Item P erfo rm an ce C h a ra cte ristics C a teg ory T e m p e ra tu re R ange ±20% , ±10% Lea kag e C urre n t

TRANSISTOR 2SA1076

Abstract: 2SA1075 2SA1076 TRANSISTOR 2Sa 1075 2SC2526 transistor 2SA TRANSISTOR 2sc2526 transistor 2SA 374 2sc2525 2SA audio POWER TRANSISTORS
Contextual Info: I? FUJITSU MICROELECTRONICS 374^7^2 F U JIT S U 2SÄ1075 M IC R O E L E C T R O N IC S 374970^ □ 2 S Ä 1076 VaS-tais FUJITSU MICROELECTRONICS i7c oififn SILICON PNP RING E M IT T E k TRANSISTORS 12 AMP, 120 & 160 VOLT DESCRIPTION FEATURES The 2SA1075/2SA1076 are wellsuited for high frequency power

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS TM nickicoxi Tim er C ircuit Use Low Leakage Current Anti-Solvent Feature Ideally suited for timer circuits. Excellent leakage current stability, even subjected to load or no load at high temperature for a long time. High Stability

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS TM nicHicon T im er C ircuit Use Low Leakage Current Anti-Solvent Feature • Ideally suited for timer circuits. • Excellent leakage current stability, even subjected to load or no load at high temperature for a long time.

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS Lo w L e a ka g e C u rre n t Low Leakage Current Anti-Solvent Feature I Standard low leakage current series. t i »sssssssssssssssssssssssssss* • KT] V X IS p e c ific a tio n s Item P e rfo rm a n c e C h a ra c te ris tic s

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS TM n ic H ic o n Tim er C ircuit Use w Leakage Current Anti-Solvent Feature • Ideally suited for timer circuits. • Excellent leakage current stability, even subjected to load or no load at high temperature for a long time.