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    CE 470 10V Search Results

    CE 470 10V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK5R1A08QM
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS Datasheet
    TK155E65Z
    Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 650 V, 0.155 Ω@10V, TO-220, DTMOSⅥ Datasheet
    TK155U65Z
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 18 A, 0.155 Ohm@10V, TOLL Datasheet
    TK6R9P08QM
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK Datasheet
    XPW4R10ANB
    Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 70 A, 0.0041 Ω@10V, DSOP Advance(WF)L Datasheet

    CE 470 10V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2n3391 complement

    Abstract: 2N2712 2N2713 2N3391 2N2925 2N2711 2N2714 2N2923 2N2924 2N2926
    Contextual Info: NPN SILICON SIGNAL G EN ER A L PURPOSE AMPLIFIERS AND SWITCHES V CE iat Type 2N2711 30*90 2N2712 75-225 2N2713 30-90 2N2714 75-225 2N2923 90-180 ' 2N2924 150-300 < 2N2925 235-470' 2N2926 35-470 ’ 2N3390 Ccb @ 10V 1 MHz Typical (P'f) @ 1Qmi, Min. (V) @ 10mA


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    2N2711 2N2712 2N2713 2N2714 150mA 2N2923 2N2924 2N2925 2N531D 2N5311 2n3391 complement 2N3391 2N2926 PDF

    beta transistor 2N2222

    Abstract: 2N2924 equivalent beta dc of transistor 2N2222 2N2925 equivalent 2N2714 1N9148 beta transistor 2N2712 2N2905 2N2219 2n3390 equivalent beta transistor 150
    Contextual Info: N PN SILICON SIG N AL G E N E R A L P U R P O S E A M P LIF IER S A N D SWITCHES V CE iat Type 2N2711 30*90 2N2712 75-225 2N2713 30-90 2N2714 75-225 2N2923 90-180 ' 2N2924 150-300 < 2N2925 235-470' 2N2926 35-470 ’ 2N3390 400-800 2N3391 250-500 Ccb @ 10V


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    2N2711 2N2712 2N2713 2N2714 150mA 2N2923 2N2924 2N2925 2N3976 M23P-XS16 beta transistor 2N2222 2N2924 equivalent beta dc of transistor 2N2222 2N2925 equivalent 1N9148 beta transistor 2N2712 2N2905 2N2219 2n3390 equivalent beta transistor 150 PDF

    A 107 transistor

    Abstract: BF287
    Contextual Info: BF 287 S I L I C O N P L A N A R NPN AM MIXER-OSCILLATOR AND AM-FM AMPLIFIER The B F 287 is a silicon plan ar NPN tran sisto r in a TO -72 metal ca se . It is prim arily intended for use in the AM m ixe r-o scillato r stage and as IF am plifier of AM -FM radios.


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    BF287 A 107 transistor PDF

    Contextual Info: N AMER PHILIPS/DISCRETE bBE D • bbSBIBl 002flflS4 b7fl * A P X BLU60/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope prim arily intended fo r use in mobile radio transmitters in the 470 MHz communications band. Features


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    002flflS4 BLU60/12 OT-119 PDF

    BTP 10/400

    Abstract: C3V9 5T BTP 10/200 BZP C3V3 tyrystor btp 10/400 bzp 650 c10 BZP 683 C6V8 tyrystory BYBP 10-200 BB109
    Contextual Info: DIODY I TYRYSTORY W ykaz oznaczeñ param etró w technicznych Cp pojemnoáó diody przy okreálonym napigciu wsteeznym W . V stoaunek pojemnoáci ÜR2/ di j» krytyczna stromosé naraatania prqdu przewodzenia fp Ip I HJ IPRM IPSM *0 •^GT *0 ZR ÍTT


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    T0220 BACE95, BAE795 BACE95R, BAE795R BADE95, BAE995 BABE95, BAE895 BAV70 BTP 10/400 C3V9 5T BTP 10/200 BZP C3V3 tyrystor btp 10/400 bzp 650 c10 BZP 683 C6V8 tyrystory BYBP 10-200 BB109 PDF

    s22b

    Abstract: bf181 s21b b 514 transistor bf 181 bf181 transistor ic s21b J BF181 MAX S21B
    Contextual Info: *BF181 NPN S IL IC O N T R A N S IS T O R , P LA N A R TRANSISTOR NPN S ILIC IU M , PLANAR sfc Preferred device D isp o sitif recommandé The NPN plan transi to r BF 181 is intended for use in U H F converter and oscillator stages television receivers. Le transistor plan NPN BF 181 est destiné à être u tili­


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    BF181 s22b bf181 s21b b 514 transistor bf 181 bf181 transistor ic s21b J BF181 MAX S21B PDF

    Contextual Info: FILM CAPACITORS ahP ALUMINUM ELECTROLYTIC CAPACITORS KM RADIAL SERIES INTRODUCTION KM Series Radial Lead Aluminum Electrolytic capacitors cover a wide range of values, voltages and temperatures. These capacitors are suitable for industrial and commercial designs requiring


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    PDF

    Contextual Info: KMH Series UNITED CHEMI-CON • Snap Mount ■ Large Capacitance ■ High CV ■ High Ripple ■ +105°C Maximum Temperature The K M H se rie s c a p a c ito rs are the standard 105°C, large ca p a cita n ce , sn ap -in ca p a cito rs from U nited C h e m -C o n . The load life for the K M H se rie s is 2,000 hours at 105°C with the rated ripple


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    KMH25VN103M25X35 KMH63VN122M22X25 120Hz) KMH160VN182M30X50 KMH400VN181M22X50 103M25X35 H160VN182M30X50 H400VN181M22X50 PDF

    capacitor RLA

    Contextual Info: lü iU R G E Alum inum Electrolytic Capacitors F e a tu re • 85°C , s ta n d a r d lo w le a k a g e c u r r e n t se rie s <3§ 3S) • R o H S C o m pliance R LA 85*C R LA 85*C L732(M) L732(M) RLA 220uF 35V 220uF 35V = H = K -SPECIFICATIONS Item s


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    220uF 120Hz, 002CV l20Hz 10x12 capacitor RLA PDF

    DG704

    Contextual Info: S G S -TH O M S O N SD1433 IM RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS 470 MHz 12.5 VOLTS CLASS C EFFICIENCY 60% COMMON EMITTER P o ut = 10 W MIN. WITH 8.0 dB GAIN PIN CONNECTION DESCRIPTION The SD1433 is a Class C epitaxial silicon NPN planar transistor designed for driver applications


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    SD1433 SD1433 Q07G44S DG704 PDF

    TRANSISTOR 2SA1076

    Abstract: 2SA1075 2SA1076 TRANSISTOR 2Sa 1075 2SC2526 transistor 2SA TRANSISTOR 2sc2526 transistor 2SA 374 2sc2525 2SA audio POWER TRANSISTORS
    Contextual Info: I? FUJITSU MICROELECTRONICS 374^7^2 F U JIT S U 2SÄ1075 M IC R O E L E C T R O N IC S 374970^ □ 2 S Ä 1076 VaS-tais FUJITSU MICROELECTRONICS i7c oififn SILICON PNP RING E M IT T E k TRANSISTORS 12 AMP, 120 & 160 VOLT DESCRIPTION FEATURES The 2SA1075/2SA1076 are wellsuited for high frequency power


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    2SA1075 2SA1076 2SA1075/2SA1076 2SC25251 2SC2526, O-220 TRANSISTOR 2SA1076 TRANSISTOR 2Sa 1075 2SC2526 transistor 2SA TRANSISTOR 2sc2526 transistor 2SA 374 2sc2525 2SA audio POWER TRANSISTORS PDF

    Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS Lo w L e a ka g e C u rre n t Low Leakage Current Anti-Solvent Feature I Standard low leakage current series. t i »sssssssssssssssssssssssssss* • KT] V X IS p e c ific a tio n s Item P e rfo rm a n c e C h a ra c te ris tic s


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    10X12 10X16 10X20 16X25 16X31 18X35 PDF

    Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS TM n ic H ic o n Tim er C ircuit Use w Leakage Current Anti-Solvent Feature • Ideally suited for timer circuits. • Excellent leakage current stability, even subjected to load or no load at high temperature for a long time.


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    120Hz, 001CVH-1 10X16 10X20 10X12 16X25 PDF

    r1270

    Contextual Info: R1270x Series 3A, 34V Step Down DC/DC converter with PLL Synchronization for Automotive Applications NO.EC-299-131029 OUTLINE The R1270x is CMOS-based Step-down DC/DC converter with internal N-channel high side Tr. The ON resistance of the built-in high-side transistor is 0.10 and the R1270x can provide the maximum 3A output


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    R1270x EC-299-131029 Room403, Room109, 10F-1, r1270 PDF

    Contextual Info: - H333 ALUMINIUM ELECTROLYTIC CAPACITORS NA SERIES MINIATURIZED TYPE FOR GENERAL PURPOSE CAN SIZE ONE RANK SMALLER THAN N SERIES SPECIFICATIONS Characteristics Item Rated working voltage 6 .3 ~ 1 0 0 V O perating tem perature range - 4 0 ~ + 8 5 °C +/- C a p a c ita n ce tolerance


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    10x12 10x16 10x21 13x22 16x24 PDF

    Contextual Info: s e MIKRO n Absolute Maximum Ratings Symbol Term Vs Top Supply voltage prim. Input signal voltage High Output peak current Output average current (max.) Collector-Em itter voltage sense across the IGBT Rate of rise and fall of voltage secondary to prim ary side


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    Visol12 PDF

    10X10-3

    Abstract: 8X103
    Contextual Info: SMD Aluminum Electrolytic Capacitors VZH F eatures: • 4 - 1 6 0 , 105°C, 2,000-5,000 hours assured • Large capacitance with ultra low impedance capacitors • Designed for surface mounting on high density PC board • RoHS Compliance SPECIFICATIONS Items


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    120Hz, 10x10 16x16 10X10-3 8X103 PDF

    BF273

    Abstract: BF 273 transistor transistor BF273 ot 273 CE 470 10V transistor J4s bf 107 a transistor bf 254 10.7 MHZ transistor bf 153
    Contextual Info: BF 273 S I L I C O N P L ANA R NPN AM CONVERTER AND AM-FM IF AMPLIFIER The BF 273 is a silicon planar NPN transisto r in a TO -18 epoxy package, intended fo r use in AM converters and IF am plifiers fo r AM and A M /F M radios. ABSOLUTE MAXIMUM RATINGS ^CBO


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    BF273 BF 273 transistor transistor BF273 ot 273 CE 470 10V transistor J4s bf 107 a transistor bf 254 10.7 MHZ transistor bf 153 PDF

    Contextual Info: MCOTS-C-28E-28-HZ Single Output Half-brick a pu d bl va ic n at ce io d n MILITARY COTS DC/DC CONVERTER 16-70V Continuous Input 16-100V Transient Input 28V Output 14A Output 95%@7A/93%@14A Efficiency Full Power Operation: -55°C to +100°C Mil-COTS The MilQor series of Mil-COTS DC/DC converters brings


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    MCOTS-C-28E-28-HZ 6-70V 6-100V PDF

    Diode marking TY

    Contextual Info: Variable Capacitance Diodes MA2J372 MA372J Silicon epitaxial planar type Unit : mm 1.25±0.1 For UHF and VHF electronic tuners 0.7±0.1 0.35±0.1 1 2.5±0.2 1.7±0.1 0 to 0.1 2 0.5±0.1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o


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    MA2J372 MA372J) Diode marking TY PDF

    Contextual Info: Variable Capacitance Diodes MA2X341 MA341 Silicon epitaxial planar type Unit : mm For AFC of UHF and VHF electronic tuner 0.16+0.10 –0.03 0.55±0.1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing


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    MA2X341 MA341) PDF

    VTL5C10

    Contextual Info: LT1122 Fast Settling, JFET Input Operational Amplifier FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO U ■ 100% Tested Settling Time to 1mV at Sum Node, 10V Step Tested with Fixed Feedback Capacitor Slew Rate Gain Bandwidth Product Power Bandwidth 20Vp-p


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    LT1122 20Vp-p) 340ns 540ns LT1122 14MHz 600pA 150pA 430pF VTL5C10 PDF

    Vactec VTL5C10

    Abstract: VTL5C10 LT1122 Vactec jfet matching fixture LT1122CS8 VTL5C1 LT1122AMJ8 LT1122CCJ8 CLM410
    Contextual Info: LT1122 Fast Settling, JFET Input Operational Amplifier U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO 100% Tested Settling Time to 1mV at Sum Node, 10V Step Tested with Fixed Feedback Capacitor Slew Rate Gain Bandwidth Product Power Bandwidth 20Vp-p


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    LT1122 20Vp-p) 340ns 540ns LT1122 14MHz 600pA 150pA 430pF Vactec VTL5C10 VTL5C10 Vactec jfet matching fixture LT1122CS8 VTL5C1 LT1122AMJ8 LT1122CCJ8 CLM410 PDF

    Contextual Info: R1 2 4 2 S SERI ES 30V Input 3A Buck DC/DC converter NO.EA-191-130312 OUTLINE The R1242S Series are CMOS-based 30V Input, 3A, Synchronous Rectified Step-down DC/DC Converters with built-in Highside Switch. Each of these ICs contains Nch Highside Tr. Typ. 0.1Ω and can supply maximum


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    EA-191-130312 R1242S Room403, Room109, 10F-1, PDF