CDG22 Search Results

Contextual Info: T EL EDYNE COMPONENTS 3bE D • ÔT17hOE 00077M2 fl ■ TSC T WTELEDYNE COMPONENTS 51-1 I CDG2214 HIGH-SPEED ANALOG SWITCH FEATURES GENERAL DESCRIPTION ■ Teledyne Components' CMOS/DMOS analog switches feature high-speed, low-power CMOS input logic and level

CHIP SM 4108

Abstract: SM 4108 sm 4109 un 5111 IC
Contextual Info: TELEDYNE COMPONENTS 2flE D m öWbQE 0Ü0L.3Q7 7 M CDG2214 S E M IC O N D U C T O R HIGH SPEED ANALOG SWITCH ORDERING INFORMATION 8-Pin Ceramic Dip Package 13 :• — ■- 8-Pin Plastic Dip (Package 8) One SPST Switch Industrial Temperature Range C0G2214BJ

TSC 500 CPE

Contextual Info: TELEDYNE 3bE C O M PO N EN T S 1> • flH .7büS DDG?4b S «TS C WTELEDYNE COMPONENTS CDG2269 DUAL SPDT CMOS/DMOS ANALOG SWITCH WITH DATA LATCH FEATURES GENERAL DESCRIPTION ■ ■ ■ ■ ■ Teledy ne Components' CMOS/DMOS analog switches feature high-speed, low-power CMOS input logic and level

general purpose of SILICON diode

Abstract: CDG22 CDG23 CDG24 CDG25 CDG26
Contextual Info: CDG22.CDG26 SILICON PLANAR BIASING DIODES The biasing diode is a silicon glass diode suitable for use as general purpose biasing diode. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Breakdown Voltage BV 4 Volts Power Dissipation PD 250 mW Operating Temperature

206af

Abstract: Teledyne Semiconductor
Contextual Info: TELEDYNE COMPONENTS D BSE ä i l 7 tOa D Ü Ü t i B U T CDG2269 SEMICONDUCTOR DUAL SPDT CMOS/D-MOS ANALOG SWITCHES WITH DATA LATCHES ORDERING INFORMATION SO-16 Surface M ount 16-Pin Plastic DIP Commercial Temp. Range CDG2269CJ CDG2269CY Package Dimensions

Contextual Info: WTELEDYNE COMPONENTS CDG2214 HIGH-SPEED ANALOG SWITCH FEATURES GENERAL DESCRIPTION • Teledyne Components' CMOS/DMOS analog switches feature high-speed, low-power CMOS input logic and level translation circuitry, and high-speed, low-capacitance, lat­ eral DMOS switches. CMOS and lateral DMOS circuitry are

CDG24

Abstract: CDG26 CDG22 CDG23 CDG25 CDG-24
Contextual Info: CDG22.CDG26 SILICON PLANAR BIASING DIODES The biasing diode is a silicon glass diode suitable for use as general purpose biasing diode. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Breakdown Voltage BV 4 Volts Power Dissipation PD 250 mW Operating Temperature

CDG2214CP

Abstract: CDG2214CY XCDG2214
Contextual Info: C A L O G I C CORP 34E D 1ÖMM322 DÜGOIÔM 4 BICG C C M O S /D M O S H ig h s p e e d 'A n a lo g Sw itch 7 -5 1 -i l CDG2214 FEATURES DESCRIPTION • High OFF Is o la tio n . >40dB <5> 100M Hz . > 2 5 d B @ 200MHz

CDG24

Abstract: silicon diode CDG22 CDG23 CDG25 CDG26 CDG-24
Contextual Info: CDG22.CDG26 SILICON PLANAR BIASING DIODES The biasing diode is a silicon glass diode suitable for use as general purpose biasing diode. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Breakdown Voltage BV 4 Volts Power Dissipation PD 250 mW Operating Temperature

CDG22

Abstract: CDG23 CDG24 CDG25 CDG26
Contextual Info: CDG22.CDG26 SILICON PLANAR BIASING DIODES The biasing diode is a silicon glass diode suitable for Max. 0.5 use as general purpose biasing diode. Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand XXX Max. 3.9 ST Min. 27.5 Glass Case DO-35

JY diode

Abstract: CDG22 CDG23 CDG24 CDG25 CDG26
Contextual Info: CDG22 .CDG26 SILICON PLANAR BIASING DIODE The biasing diode is a silicon glass diode suitable for use as general purpose biasing diode. max. 1.90 Cathode max. 0.520 Glass case JEDEC DO-35 Dimensions in mm Absolute Maximum Ratings Ta= 25 °C Symbol Value

CDG2269CP

Abstract: CDG2269CY XCDG2269 so1f
Contextual Info: 34E ]> • CALOGIC CORP 16MM3S2 QQQQ1ÛÛ 1 J H C G C CMOS/DMOS Wideband Dual SPOTAnalog Switch 7^57-// FEATURES DESCRIPTION • • • • • • • The. CDG2269 is a Precision Dual Single Pole, Double Throw Analog Switch for precision applications in instrumentation,

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,