CCC1 Search Results

Contextual Info: 6115950 MICROSEMI 02E 00 51 7 CORP/POWER DE I □E ^115^50 D -T-3 3 - 2 9 □□□□517 CCC10021 TPXC TECHNOLOGY 60 A, 350 V, NPN Darlington Power Transistor Chip • Epitaxial Diffused, Glass Passivated n ■ Contact Metallization: Base and emitter-aluminum

Contextual Info: Case Style CCC CCC127 Outline Dimensions CASE# CCC127 A B C D 2.25 1.38 1.24 .50 57.15 (35.05) (31.50) (12.70) E .150 (3.81) F 3.100 (78.74) G .138 (3.51) H J 1.238 3.25 (31.45) (82.55) K .12 (3.05) L M .80 .69 (20.32) (17.53) N 1.60 (40.64) CASE# P Q R

CCC-13

Abstract: BUT13
Contextual Info: 6115950 M IC ROSEMI 02E C OR P/ PO WER 05 00510 ]>e | bllS^SO 0DD0S10 5 CCC13 P ÏC T TECHNOLOGY 28 A, 600 V, NPN Darlington Power Transistor Chip • Triple Diffused, Glass Passivated ■ Contact Metallization: Base and emitter-aluminum Collector Al-Ti-Ni-Au

Contextual Info: 6115950 MI CRO SE MI 02E CORP/POWER □a 00516 D -r -3 3 -2 .9 D E l b l l S ^ S D 0 0 DD5 1 b 3 CCC10021A T X C J TECHNOLOGY 60 A, 350 V, NPN Darlington Power Transistor Chip • T riple Diffused, Glass Passivated ■ Contact M etallization: Base and em itter-alum inum

MJ10001

Contextual Info: 6115950 MIC ROSEMI 02E C OR P/ POWE R □a J P X C 00512 D E I ^115^50 DD0GS1S CCC10001 3 TECHNOLOGY 20 A, 500 V, NPN Darlington Power Transistor Chip • Epitaxial Diffused, Glass Passivated ■ Contact Metallization: Base and emitter-aluminum Collector Al-Ti-Ni-Au

ALLOY 52

Abstract: JJJ142 JJJ245 AAA118 DDD131 DDD338 FFF122 Alumin
Contextual Info: CASE STYLES OUTLINE DIMENSIONS inch mm case no. A AAA118 BBB123 CCC127 B C 1.50 .50 .935 38.10 12.70 23.75 .145 3.69 .040 1.100 1.02 27.94 F G H .19 .400 4.83 10.16 .030 .488 .76 12.40 2.25 1.38 1.24 .50 57.15 35.05 31.50 12.70 .150 3.100 3.81 78.74 7.00

1617H

Contextual Info: 1 1111111111111 111111 1 1111111111111 1 1111111111111 1 1111111111111 1 1 C123456788982AB9CCCDEFEECD C CCCCCCCC C CCCCCCCCCCCC C CCCC CC EC1  EFCC E!C966" #!$%&' C966*C+,-1.C,DC/C$%&CEEFED

A02E

Contextual Info: 6 1 15950 M I C R O S E M I 02E 0051 1 CORP/POWER BB—o a D D FJbllS^SD " 7 *^ 33 DDDDS11 * 2 *7 4 CCC14 24 A, 850 V, NPN Darlington Power TVansistor Chip • Triple Diffused, Glass Passivated ■ Contact Metallization: Base and emilter-aluminum Collector Al-Ti-Ni-Au

473PF

Abstract: 2651n
Contextual Info: 1 2 3 4 5 6 7 8 9 10 11 12 13 14 A A B B 50 Ω rsource 3.377uH LLL1 C 10.29pF CLC1 6.627uH LLL2 5.243pF CLC2 7.346uH LLL3 5.259uH LLL4 4.73pF CLC3 1.164uH LLL5 6.607pF CLC4 29.86pF CLC5 C 50 Ω rload 0V vin 0.4654nF CCC1 D 2.104nF CCC2 74.66nH LCL1 16.52nH

DDC4717

Abstract: CDC-7609 DDC6980 DDC4717-024 005801 Silicon Point Contact Mixer Diodes 075001
Contextual Info: Zero Bias Silicon Schottky Barrier Detector Diodes ALPHA INK/ SEMICONDUCTOR 1SE I • OSSS* « CCC11SS 370 * A L P . tv T T 0 7 Features • Zero Turn On, No Bias Required • Low Video Impedance Magnification: 10X Description Alpha’s series of packaged, beam-lead and chip zero

5609 transistor

Abstract: transistor 5609 5609 BU208 CCC16018 MJ16018
Contextual Info: 6115950 M ICROSEMÌ CO R P/POWER 02E .OE 0 0 5 09 DE | b l l 5 T S 0 D 0 D0 0 S CH t f. 3 3 -13 CCC16018 TECHNOLOGY 10 A, 1500 V, NPN Power Transistor Chip •Triple Diffused, Glass Passivated ■ Contact Metallization: Base and emitter-aluminum Collector Al-Ti-Ni-Au

Contextual Info: 6 1 1 5 9 50 MI C ROS EMI 02E C OR P / P OWE R OS 00518 D PE I b l l S T S D DOODSlfi 7 CCC10023A P T C TECHNOLOGY 40 A, 600 V, NPN Darlington Power Transistor Chip • Triple Diffused, Glass Passivated ■ Contact Metallization: Base and emitter-aluminum

Contextual Info: '6115950 MICROSEMI CORP/ POWER 02E 'oh D T '3 3 - Z ? 00519 D lf| b l l i ^ S D QDOOSn CCC10023 'P T C TECHNOLOGY 40 A, 600 V, NPN Darlington Power Transistor Chip • Epitaxial Diffused, Glass Passivated ■ Contact Metallization: Base and emitter-aluminum

CCC-15

Abstract: BUT15
Contextual Info: 6115950 M ICRO SE MI CORP/POWER. OS DE _ 0 2E 0 0 5 1 3 D -T b l l S ^ S O D0GG513 Ö | [ CCC15 "P X C T TECHNOLOGY 20 A, 1000 V, NPN Darlington Power TVansistor Chip • Triple Diffused, Glass Passivated .250" 6.4mm ■ Contact Metallization: Base and emitter-aluminum

Contextual Info: User’s Manual V850E/ME2 32-Bit Single-Chip Microcontroller Hardware µPD703111A Document No. U16031EJ3V0UD00 3rd edition Date Published June 2004 N CP(K) Printed in Japan [MEMO] 2 User’s Manual U16031EJ3V0UD NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN

TDA 5700

Abstract: tda 7770 IM6402 SK 5207 tda 8838 SKI 3203 TDA 3006 hs 3161 z9009 IM6100
Contextual Info: IM 6 1 0 1 P ro gram m able In te rfa c e E lem en t P IE D m ü ^D L FEATURES GENERAL DESCRIPTION • Com patible with IM 6100 Microprocessor The IM6101 is a Program mable Interface Element (PIE) device designed for interfacing various peripheral chips such as U A R T ’s, F IF O ’s, Keyboard Scanner’s to

vbg marking code SOT23

Abstract: PF08109B CAPACITOR 33PF PF08122B PF08123B LTC4400-1 LTC4400-2 PF08107B RF3108 schottky diode 2GHz to 3GHz
Contextual Info: LTC4400-1/LTC4400-2 RF Power Controllers with 450kHz Loop BW and 45dB Dynamic Range U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO RF Power Amplifier Control in ThinSOTTM Package Internal Schottky Diode Detector with > 45dB Range

Contextual Info: 042 AHH-ELB, 043 AHH-ELB www.vishay.com Vishay BCcomponents Aluminum Capacitors Axial High Temperature High Voltage for E.L.B. FEATURES 041-043 ASH 042/043 AHH-ELB 550 V/24 h standard 042/043 AMH-ELB 550 V/24 h 85 °C Fig. 1 • Useful life: 10 000 h at 105 °C

ZSDR-230

Contextual Info: Coaxial Switch ZSDR-230+ 50W SPDT Pin Diode, TTL Driver Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power 10 to 3000 MHz L +20 dBm , M(+28 dBm), U(+30 dBm) Supply V +6V max. Permanent damage may occur if any of these limits are exceeded.

"Aluminum Electrolytic Capacitors"

Abstract: 056/057 PSM-SI 058/059 PSM-SI 48101 pin diagram of 74153 PSM-SI MRA460 CA3300 056 PSM-SI
Contextual Info: BCcomponents DATA SHEET 056/057 PSM-SI Aluminum electrolytic capacitors Power Standard Miniature Snap-in Product specification Supersedes data of 18th January 2000 File under BCcomponents, BC01 2001 Dec 10 BCcomponents Product specification Aluminum electrolytic capacitors

Contextual Info: ADVANCE INFORMATION CDC 3207G-C Automotive Controller Specification Edition April 15, 2003 6251-589-3AI MICRONAS CDC 3207G-C ADVANCE INFORMATION Contents Page Section Title 3 3 5 6 1. 1.1. 1.2. 1.3. Introduction Features Abbreviations Block Diagram 7 7 8 8

EPSON stepper motor

Abstract: 3231G 6251-609-2AI
Contextual Info: PRELIMINARY DATA SHEET MICRONAS Edition Feb 26, 2004 6251-609-1PD CDC 3231G-C Automotive Controller MICRONAS CDC 3231G-C PRELIMINARY DATA SHEET Contents Page Section Title 3 3 5 6 1. 1.1. 1.2. 1.3. Introduction Features Abbreviations Block Diagram 7 7 8 8

CDC3217G

Abstract: CDC3207G-C3 cdc3272 CDC3217G-C
Contextual Info: DATA SHEET MICRONAS Edition Feb. 10, 2005 6251-589-1DS CDC 3207G-C3 Automotive Controller MICRONAS CDC 3207G-C3 DATA SHEET Contents Page Section Title 3 3 6 7 1. 1.1. 1.2. 1.3. Introduction Features Abbreviations Block Diagram 9 9 10 10 11 2. 2.1. 2.2. 2.3.

pf08123

Abstract: LT5503
Contextual Info: LTC4400-1/LTC4400-2 RF Power Controllers with 450kHz Loop BW and 45dB Dynamic Range FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO RF Power Amplifier Control in ThinSOTTM Package Internal Schottky Diode Detector with > 45dB Range