CASE100 Search Results

BSM150GB160D

Contextual Info: BSM150GB160D Transistors Half Bridge IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)1.6k V(BR)GES (V)20 I(C) Max. (A)200 Absolute Max. Power Diss. (W)1.25k Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case100m

Contextual Info: BSM150GB120D Transistors Half Bridge IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)1.0k V(BR)GES (V) I(C) Max. (A)150 Absolute Max. Power Diss. (W)1.2k Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case100m

IRFP250NPbF

Abstract: IRFP250N 035H IRFPE30 irfp250n* applications 4.5v to 100v input regulator
Contextual Info: PD - 95007A IRFP250NPbF l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free HEXFET Power MOSFET D VDSS = 200V RDS on = 0.075Ω

IRFP260NPBF

Abstract: 4.5v to 100v input regulator
Contextual Info: PD - 95010 IRFP260NPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description l D l VDSS = 200V

diode byx 32

Abstract: diode byx diode byx 66-1000 DIODE REDRESSEMENT Diodes de redressement LA 7123 byx 21 diodes redressement thomson alimentation decoupage t03h
Contextual Info: S G STC S -¡-THOMSON D | 7 ^ 2 3 7 ÜODaaôT BYX 66-600, R BYX 66-1000, (R) O THOMSON-CSF 'DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY RECTIFIER DIODES DIODES DE REDRESSEMENT RAPIDES 59C 02289 d r^oi-n \ HIGH VOLTAGE SUPERSWITCH RECTIFIERS

IRFP260N applications

Abstract: IRFP260N 035H IRFPE30 4.5V to 100V input regulator
Contextual Info: PD - 94004B IRFP260N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 200V RDS on = 0.04Ω G ID = 50A

AN-994

Abstract: IRF630NL IRL3103L
Contextual Info: PD - 95047 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF630NPbF IRF630NSPbF IRF630NLPbF l l HEXFET Power MOSFET

AN-994

Abstract: IRF640NL IRL3103L
Contextual Info: PD - 95046 Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF640NPbF IRF640NSPbF IRF640NLPbF l HEXFET Power MOSFET

IRFP250NPbF

Abstract: 035H IRFPE30 4.5v to 100v input regulator
Contextual Info: PD - 95007 IRFP250NPbF l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free HEXFET Power MOSFET D VDSS = 200V RDS on = 0.075Ω

esm diodes

Abstract: 181800r c81 004 cb33 182100 REDRESSEMENT ESM182-100R 87400 DRT76 C701
Contextual Info: C B 1 9 7 (C B 1 2 6 ) (C B 3 3 ) (T O 126 ) Fast recovery silicon re c tifie r diodes — t rr 3 0 0 ns D io d e s d e re d re s s e m e n t ra p id e s a u s ilic iu m — t r r 3 0 0 ns Case Type B oîtier V RRM (V) T (vjï (°C) max •f s m (A) l 0 <A)

International Rectifier irf640n

Abstract: irf640n N-Channel MOSFET 200v
Contextual Info: PD - 94007 IRF640N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 200V RDS on = 0.15Ω G ID = 18A

irfp250n

Abstract: 4.5V to 100V input regulator
Contextual Info: PD - 94008A IRFP250N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 200V RDS on = 0.075Ω G ID = 30A

Contextual Info: PD - 95007A IRFP250NPbF l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free HEXFET Power MOSFET D VDSS = 200V RDS on = 0.075Ω

IRFP260MPBF

Contextual Info: PD - 96293 IRFP260MPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description l D l VDSS = 200V

AN-994

Abstract: IRF1010 IRF530S IRF630NL IRL3103L 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD - 95047A Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF630NPbF IRF630NSPbF IRF630NLPbF l l Fifth Generation HEXFET Power MOSFETs from

035H

Abstract: IRFPE30 4.5v to 100v input regulator IRFP250NPBF
Contextual Info: PD - 95007 IRFP250NPbF l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free HEXFET Power MOSFET D VDSS = 200V RDS on = 0.075Ω

IRF630N

Abstract: IRF630NL IRF630NS
Contextual Info: PD - 94005B l IRF630N IRF630NS IRF630NL l HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description D RDS on = 0.30Ω

SEC irf630

Abstract: IRF630 SEC irf630 datasheet CIRF630 irf630 IRF630 p 4.5V to 100V input regulator 4.5V TO 100V INPUT REGULATORS
Contextual Info: IRF630 ! POWER MOSFET GENERAL DESCRIPTION FEATURES This Power MOSFET is designed for low voltage, high ‹ Dynamic dv/dt Rating speed power switching applications such as switching ‹ Repetitive Avalanche Rated regulators, converters, solenoid and relay drivers.

IRFP250N

Abstract: irfp250n DRIVER 4.5v to 100v input regulator
Contextual Info: PD - 94008 IRFP250N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 200V RDS on = 0.075Ω G ID = 30A

AN-994

Abstract: IRF630N IRF630NL IRF630NS
Contextual Info: PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l HEXFET Power MOSFET l D RDS on = 0.30Ω

AC Transformer 50A 100V inductance

Abstract: 035H IRFPE30 4.5v to 100v input regulator
Contextual Info: PD - 95010 IRFP260NPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description l D l VDSS = 200V

irfp250m

Abstract: IRFP250MPBF 76T marking 4.5V to 100V input regulator
Contextual Info: PD - 96292 IRFP250MPbF l l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free HEXFET Power MOSFET D VDSS = 200V RDS on = 0.075Ω

irfp260m

Abstract: IRFP260MPBF IRF*260 4.5V to 100V input regulator
Contextual Info: PD - 96293 IRFP260MPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description l D l VDSS = 200V

IRFP260N

Abstract: IRFP260N applications IRFP260N IR IRFP260N data sheet Mosfet IRFP260N to irfp260n display 7 segmentos 035H IRFPE30 4.5V to 100V input regulator
Contextual Info: PD - 94004B IRFP260N HEXFET Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 200V RDS on = 0.04Ω G ID = 50A