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    IRF630NL Search Results

    IRF630NL Datasheets (6)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IRF630NL
    Fairchild Semiconductor N-Channel Power MOSFETs 200V, 9.3A, 0.30 Ohms Original PDF 207.1KB 11
    IRF630NL
    International Rectifier 200V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF630NL with Standard Packaging Original PDF 246.61KB 12
    IRF630NL
    International Rectifier HEXFET Power MOSFET Original PDF 164.48KB 11
    IRF630NL
    Transys Electronics Power MOSFET Original PDF 173.81KB 2
    IRF630NLPBF
    International Rectifier 200V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF630NL with Lead Free Packaging Original PDF 246.61KB 12
    IRF630NLPBF
    International Rectifier 200V Single N-Channel HEXFET Power MOSFET in a TO-262 package Original PDF 164.49KB 11
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    IRF630NL Price and Stock

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    Infineon Technologies AG IRF630NLPBF

    MOSFET, 200V, 9.5A, 300 MOHM, 23.3 NC QG, TO-262
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS IRF630NLPBF Bulk 600
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.86
    • 10000 $2.60
    Get Quote
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRF630NL 4,238
    • 1 $4.96
    • 10 $4.96
    • 100 $4.96
    • 1000 $2.48
    • 10000 $2.48
    Buy Now

    IRF630NL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ISL 2651

    Abstract: 630n
    Contextual Info: IRF630N/IRF630NS/IRF630NL N-Channel Power MOSFETs 200V, 9.3A, 0.30Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.200Ω (Typ), VGS = 10V • UIS Rating Curve • Simulation Models - Temperature Compensated PSPICE and SABER


    Original
    irf630n/irf630ns/irf630nlo-263o-262o-220+3100ocisl 2651630n PDF

    AN-994

    Abstract: IRF630NL IRL3103L
    Contextual Info: PD - 95047 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF630NPbF IRF630NSPbF IRF630NLPbF l l HEXFET Power MOSFET


    Original
    irf630npbfirf630nspbfirf630nlpbfo-220+4o-220aban-994irf630nlirl3103l PDF

    AN-994

    Abstract: IRF1010 IRF530S IRF630NL IRL3103L 4.5V TO 100V INPUT REGULATOR
    Contextual Info: PD - 95047A Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF630NPbF IRF630NSPbF IRF630NLPbF l l Fifth Generation HEXFET Power MOSFETs from


    Original
    5047airf630npbfirf630nspbfirf630nlpbf+8o-220o-220aban-994irf1010irf530sirf630nlirl3103l4.5v to 100v input regulator PDF

    IRF630N

    Abstract: IRF630NL IRF630NS
    Contextual Info: PD - 94005B l IRF630N IRF630NS IRF630NL l HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description D RDS on = 0.30Ω


    Original
    94005birf630nirf630nsirf630nl+4o-220an-994o-220abirf630ns/l PDF

    AN-994

    Abstract: IRF630N IRF630NL IRF630NS
    Contextual Info: PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l HEXFET Power MOSFET l D RDS on = 0.30Ω


    Original
    4005airf630nirf630nsirf630nl+3o-220preferre2-7105an-994 PDF

    IRF630N

    Abstract: IRF630NL IRF630NS
    Contextual Info: PD - 94005B l IRF630N IRF630NS IRF630NL l HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description D RDS on = 0.30Ω


    Original
    94005birf630nirf630nsirf630nl+4o-220an-994o-220abirf630ns/l PDF

    bly 93a

    Abstract: irf630npbf AN-994 IRF630NL IRL3103L
    Contextual Info: PD - 95047 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF630NPbF IRF630NSPbF IRF630NLPbF l l HEXFET Power MOSFET


    Original
    irf630npbfirf630nspbfirf630nlpbfo-220+5o-220aban-994bly 93airf630nlirl3103l PDF

    630N

    Abstract: IRF630NS IRF630N IRF630NL
    Contextual Info: IRF630N/IRF630NS/IRF630NL N-Channel Power MOSFETs 200V, 9.3A, 0.30Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.200Ω (Typ), VGS = 10V • UIS Rating Curve • Simulation Models - Temperature Compensated PSPICE and SABER


    Original
    irf630n/irf630ns/irf630nlo-263o-262o-220+4630nirf630nsirf630nirf630nl PDF

    IRF630NL

    Contextual Info: PD - 94005 IRF630N IRF630NS IRF630NL PROVISIONAL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l HEXFET Power MOSFET


    Original
    irf630nirf630nsirf630nlo-220 PDF

    Contextual Info: PD - 94005B l IRF630N IRF630NS IRF630NL l HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description D RDS on = 0.30Ω


    Original
    94005birf630nirf630nsirf630nl+4o-220an-994o-220abirf630ns/l PDF

    Contextual Info: PD - 95047A Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description IRF630NPbF IRF630NSPbF IRF630NLPbF l l Fifth Generation HEXFET Power MOSFETs from


    Original
    5047airf630npbfirf630nspbfirf630nlpbf+3o-220o-220aban-994 PDF

    IRF620N

    Abstract: J 115 mosfet IRF630NL IRF630NS TD 1409
    Contextual Info: IRF630N/NS/NL Power MOSFET VDSS = 200V, RDS on = 0.30 ohm, ID = 9.3 A D G S IRF620N IRF630NS ELECTRICAL CHARACTERISICS at Parameter IRF630NL Tj = 25 C Maximum. Unless stated Otherwise Drain to Source Leakage Current Gate to Source Leakage Current Min IDSS


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    irf630n/ns/nlirf620nirf630nsirf630nl+6160vdc10vdc100vdc25vdcj 115 mosfettd 1409 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    p462-ndp463-ndlng295lfcp2ulng395mftp5u+11us2011schematic diagram atx power supply 500wpioneer pal 012a1000w inverter pure sine wave schematic diagram600va numeric ups circuit diagramswinbond bios 25064tle 9180 infineonsmsc mec 1300 nutbe schematic diagram inverter 2000wdk55circuit diagram of luminous 600va ups PDF

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original
    100mt160papbf100mt160pa100mt160pbpbfiru1239sc+9iru1239full-bridge ir2110class-d ir2010pwm ir2112 irf540ir21065full bridge ir2110h-bridge irfz44nirvcm10a600v 300a igbt dc to dc boost converter PDF