CASE STYLE G3 Search Results

marking z5e capacitor

Contextual Info: TUSONIX 1.0 1.1 1.2 1.3 GENERAL SPECIFICATIONS MECHANICAL Case: Conformal coated. Lead Material: Copper clad steel. Terminal Strength: Mil-Std-202, Method 211, Condition A radial . 2 lbs. TUSONIX style 8121 and smaller. 5 lbs. TUSONIX style 8131 and larger.

Contextual Info: G3A THRU GSM GLASS PASSIVATED JUNCTION RECTIFIER Forward Current -3.0 Amperes Reverse Voltage -50 to 1000 Volts FEATURES Case Style Q3 ♦ High temperature metallurgtcaHy bonded construction ♦ Glass passivated cavity-free junction ♦ Hermetically sealed package

Contextual Info: 1N5624 THRU 1N5627 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 3 .0 Amperes FEATURES CASE STYLE G3 ♦ Glass passivated cavity-free junction ♦ High temperature metallurgical^ bonded constructed ♦ Hermetically sealed package

Case Style G3

Abstract: 1NS624
Contextual Info: 1N5624 THRU 1N5627 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 3.0 Amperes FEATURES CASE STYLE G3 ♦ Glass passivated cavity-free junction ♦ High temperature m etallurgical^ bonded constructed ♦ Hermetically sealed package

Contextual Info: G3A thru G3M Vishay Semiconductors formerly General Semiconductor Glass Passivated Junction Rectifiers Case Style G3 1.0 25.4 MIN * d e t n e t Pa Features • High temperature metallurgically bonded constructed rectifiers • Cavity-free glass passivated junction

G3SBA20

Abstract: G3SBA60
Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT G3SBA20 AND G3SBA60 GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER Reverse Voltage - 200 and 600 Volts Forward Current - 4.0 Amperes FEATURES Case Style GBU 0.140 3.56 0.130 (3.30) 0.880 (22.3) 0.860 (21.8) 0.020 R (TYP.)

Contextual Info: SOLID STATE DEVICES INC iSE D |a3btoii GGGnat. s I T-X3-0? PRELIMINARY DATA SHEET 5-1-85 SHA396A THRU SHA396D 15 AMP ULTRA FAST POSITIVE CENTERTAP 2 0 0 -5 0 0 VOLTS CASE STYLE FEATURES JEDEC TO-59 ALL TERMINALS ISOLATED FROM CASE • • • • • • •

Contextual Info: BY228 Vishay Semiconductors formerly General Semiconductor Case Style G3 * d e t n e t a P Clamper/Damper Glass Passivated Rectifier Reverse Voltage 1500V Forward Current 2.5A Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction

1N5624

Abstract: 1N5625 1N5626 1N5627
Contextual Info: 1N5624 thru 1N5627 Glass Passivated Junction Rectifier * d e t n Features e t a P Case Style G3 • • • • Cavity-free glass passivated junction High temperature metallurgically bonded construction Hermetically sealed package Capable of meeting environmental standards of

RG3M

Abstract: RG3G
Contextual Info: RG3A thru RG3M Vishay Semiconductors formerly General Semiconductor Glass Passivated Fast Switching Rectifier Case Style G3 1.0 25.4 MIN *Features d e t n e t a P Reverse Voltage 50 to 1000V Forward Current 3.0A • High temperature metallurgically bonded construction

BYW76

Abstract: BYW74 BYW72 BYW73 BYW75
Contextual Info: BYW72 thru BYW76 Vishay Semiconductors formerly General Semiconductor Glass Passivated Junction Fast Switching Rectifier Reverse Voltage 200 to 600 V Forward Current 3.0 A Case Style G3 Features 1.0 25.4 MIN 0.250 (6.3) 0.170 (4.3) DIA. * d e t n e t a P

diode 1n5624

Abstract: vishay 1N5625 1N5624 1N5625 1N5626 1N5627
Contextual Info: 1N5624 thru 1N5627 Vishay Semiconductors formerly General Semiconductor Glass Passivated Junction Rectifiers Case Style G3 1.0 25.4 MIN Rev. Voltage 200 to 800V Forward Current 3.0A * d e t n Features e t a P • • • • Cavity-free glass passivated junction

Contextual Info: G3A THRU G3M Glass Passivated Junction Rectifier * d e t Features n e t Pa Case Style G3 • High temperature metallurgically bonded constructed rectifiers • Cavity-free glass passivated junction • Hermetically sealed package • 3.0 ampere operation at TA=70°C with no thermal

Contextual Info: G3SBA20, G3SBA60 & G3SBA80 Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Major Ratings and Characteristics IF AV 4A VRRM 200 V, 600 V & 800 V IFSM 80 A IR 5 µA VF 1.0 V Tj max. 150 °C Case Style GBU Features • • • •

Contextual Info: G3SBA20, G3SBA60 & G3SBA80 Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Major Ratings and Characteristics IF AV 4A VRRM 200 V, 600 V & 800 V IFSM 80 A IR 5 µA VF 1.0 V Tj max. 150 °C Case Style GBU Features • • • •

Contextual Info: BY228 Clamper/Damper Glass Passivated Rectifier Reverse Voltage 1500V Forward Current 2.5A Case Style G3 Features * d e t n e t a P • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • 2.5 ampere operation at TA = 50°C with no

Contextual Info: BY228 Series Clamper/Damper Glass Passivated Rectifier Reverse Voltage 1500V Forward Current 2.5A Case Style G3 Features * d e t n e t a P • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • 2.5 ampere operation at TA = 50°C with no thermal runaway

Contextual Info: MIL-C-39006 Military Style Tantalum Capacitors CLR25 MIL-C-39006 PART NUMBER SYSTEM M39006 01 300V Abbreviated form of MIL-C-39006 Tantalum Capacitors Sequential dash number from table. For specific value of capacitance, tolerance, voltage, case size and failure

diode 1n5624

Abstract: 1N5624 with forward current 5 amp 1N5624 1N5625 1N5626 1N5627
Contextual Info: 1N5624 THRU 1N5627 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts FEATURES N T E D * CASE STYLE G3 E P A T Forward Current - 3.0 Amperes 1.0 25.4 MIN 0.250 (6.3) 0.170 (4.3) DIA. 0.300 (7.6) MAX. 0.052 (1.32) 0.048 (1.22) DIA. ♦ Glass passivated cavity-free junction

BYW76

Abstract: BYW72 BYW74 BYW73 BYW75
Contextual Info: BYW72 THRU BYW76 Glass Passivated Junction Fast Switching Rectifier * d e t n e t Pa Features Case Style G3 1.0 25.4 MIN • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Hermetically sealed package • 3.0 ampere operation at TA=45°C with no thermal runaway

Contextual Info: G3SBA20, G3SBA60 & G3SBA80 Vishay Semiconductors Glass Passivated Single-Phase Bridge Rectifier Major Ratings and Characteristics IF AV 4A VRRM 200 V, 600 V & 800 V IFSM 80 A IR 5 µA VF 1.0 V Tj max. 150 °C Features • • • • • Case Style GBU UL Recognition file number E54214

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High V oltage Transistor PNP Silicon MMBT5401LT1 colle3ctor Motorola Preferred Device 2 EMITTER CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage v CEO -150 Vdc Collector-Base Voltage

4A200

Contextual Info: G3SBA20, G3SBA60 & G3SBA80 Vishay Semiconductors Glass Passivated Single-Phase Bridge Rectifier Major Ratings and Characteristics IF AV 4A VRRM 200 V, 600 V & 800 V IFSM 80 A IR 5 µA VF 1.0 V Tj max. 150 °C Case Style GBU Features • • • • • UL Recognition file number E54214

G3SBA20

Abstract: G3SBA60 G3SBA80 J-STD-002B
Contextual Info: G3SBA20, G3SBA60 & G3SBA80 Vishay Semiconductors Glass Passivated Single-Phase Bridge Rectifier Major Ratings and Characteristics IF AV 4A VRRM 200 V, 600 V & 800 V IFSM 80 A IR 5 µA VF 1.0 V Tj max. 150 °C Case Style GBU Features • • • • • UL Recognition file number E54214