CAPACITORS .1 600 VOLTS Search Results

GE capacitor CATALOG

Abstract: A97F8622 GE commutation capacitors A97F8672 SCR 131- 6 W 58 A97F8614 a97f8615 A97F8616 A97F8620 SCR 131- 6 W 40
Contextual Info: SCR Commutation Capacitors 97F8600 Series 600 to 1500 Volts Peak This family of capacitors is designed for high-current applications, such as 1 SCR commutation, (2) snubbers for SCRs, GTOs and other power semiconductors, and (3) for any other circuits where

Contextual Info: A TYPE 4 1 8P Polyester C apacitors COMPANY OF SPRAGUE Filmite "E ", ORANGE DROP®, Radial Lead FEATURES • Identical performance characteristics to Type 225P pressed polyester capacitors through 600 WVDC ratings • Wound from PETP polyester film and thin gauge foil under

DPM-6D27J

Abstract: cde DPFF ML0039 y427
Contextual Info: DPFF Header Page 1 of 1 Type DPFF, Polypropylene Film/Foil, Radial Leads« Type DPFF film!foil polypropylene capacitors are single­ section extended foil units through 600 wvdc and series wound extended foil with a common foil for 800 to 1600 wvdc. They provide excellent temperature stability at +105°C

Contextual Info: A C O M P A N Y OF TYPE 4 1 8P Polyester C apacitors SPRAGUE Filmite "E ", ORANGE DROP®, Radial Lead FEATURES • Identical performance characteristics to Type 225P pressed polyester capacitors through 600 WVDC ratings • Wound from PETP polyester film and thin gauge foil under

AN749

Abstract: 723 voltage regulator 600 Watt Mosfet Power Amplifier 1N4148 1N5357A MC1723 MRF154 MRF157 0.1 uf Ceramic disc Capacitors 104 mrf154 amplifier
Contextual Info: Order this document by MRF157/D SEMICONDUCTOR TECHNICAL DATA The RF Power MOS Line Power Field Effect Transistor MRF157 N–Channel Enhancement Mode Designed primarily for linear large–signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics

SBE418P600V

Abstract: SBE418P 104K 400V 104K 400V capacitor 418P
Contextual Info: Type 418P, Orange Drop , Polyester Film/Foil Capacitors ® Type 418P Orange Drop Round Profile Polyester Film/Foil Capacitors Features • Radial-lead. Round profile. • Non-inductively wound, extended foil construction. • Ratings up to 1000 Volts D-C.

CDE418P600V

Abstract: ORANGE DROP SPRAGUE 600V 418P 104K 400V capacitor cornell dubilier film polyester capacitor cde capacitor date codes
Contextual Info: Type 418P, Orange Drop , Polyester Film/Foil Capacitors ® Type 418P Orange Drop Round Profile Polyester Film/Foil Capacitors Features • Radial-lead. Round profile. • Non-inductively wound, extended foil construction. • Ratings up to 1000 Volts D-C.

mrf154 amplifier

Abstract: AN749 103 Ceramic Disc Capacitors MRF157 NIPPON CAPACITORS mc1723 ic rf push pull mosfet power amplifier 1N4148 1N5357A MC1723
Contextual Info: MOTOROLA Order this document by MRF157/D SEMICONDUCTOR TECHNICAL DATA The RF Power MOS Line Power Field Effect Transistor MRF157 N–Channel Enhancement Mode Designed primarily for linear large–signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics

527 MOSFET TRANSISTOR motorola

Abstract: RL1009-5820-97-D1 AN749 NIPPON CAPACITORS MC1723 application notes IC1 723 1N4148 1N5357A MC1723 MRF154
Contextual Info: MOTOROLA Order this document by MRF157/D SEMICONDUCTOR TECHNICAL DATA The RF Power MOS Line Power Field Effect Transistor MRF157 N–Channel Enhancement Mode Designed primarily for linear large–signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics

418P

Abstract: cde cornell capacitor date codes
Contextual Info: Type 418P, Orange Drop , Polyester Film/Foil Capacitors ® Type 418P Orange Drop Round Profile Polyester Film/Foil Capacitors Features • Radial-lead. Round profile. • Non-inductively wound, extended foil construction. • Ratings up to 1000 Volts D-C.

NIPPON CAPACITORS

Abstract: AN-749 MRF157
Contextual Info: MOTOROLA Order this document by MRF157/D SEMICONDUCTOR TECHNICAL DATA Power Field Effect Transistor MRF157 N–Channel Enhancement Mode Designed primarily for linear large–signal output stages to 80 MHz. ARCHIVE INFORMATION • Specified 50 Volts, 30 MHz Characteristics

Contextual Info: Document Number: MW6IC2015N Rev. 3, 12/2008 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers MW6IC2015NBR1 MW6IC2015GNBR1 The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS

IC 2030 schematic diagram

Abstract: 1800 ldmos class g power amplifier schematic TD-SCDMA A114 A115 AN1977 AN1987 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 3, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers MW6IC2015NBR1 MW6IC2015GNBR1 The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS

0.1 mF ceramic disc capacitor

Abstract: MRF157 keystone carbon Fair-Rite ATC
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Power MOS Line Pow er Field Effect Transistor N-Channel Enhancement Mode Designed primarily for linear large-signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts

Contextual Info: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage

mrf154 amplifier

Abstract: MRF154 Mrf154 M
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for linear large-signal output stages in the 2 .0 -1 0 0 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics

GE 40l capacitors

Abstract: 40L6221 40L6472 40L3471 40L3100 40L3101 40L3472 40L3331 40L6101 40L3681
Contextual Info: 6QXEEHU DQG +LJK²&XUUHQW '& &DSDFLWRUV 400 and 600 Volts Peak The 40L series are high-performance dry, axial-leaded capacitors specifically designed for demanding electronic applications. They are commonly used in input and output filters and for DC blocking in high frequency switch mode power supplies. The low

TH 2267

Abstract: equivalent transistor broadband transformers
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for linear large-signal output stages in the 2 .0 -1 0 0 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics

100B0R1BW

Abstract: 100A1R5BW A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1 MW6IC2015NBR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 0, 2/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS

Contextual Info: Freescale Semiconductor Technical Data MW4IC915 Rev. 5, 3/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi−stage

A113

Abstract: AN1955 AN1987 MW4IC915 MW4IC915GMBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915NBR1 GM 950 motorola 686 CAPACITOR
Contextual Info: Freescale Semiconductor Technical Data MW4IC915 Rev. 5, 3/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi−stage

PH330VB161V14X37LL

Contextual Info: U N IT E D Series CHEMI-CON • Miniature ■ Photoflash Use ■ Low Leakage ■ 330VDC Rated Voltage ■ +55°C Maximum Temperature The PH series c a p a cito rs are designed sp e cifica lly fo r photoflash use. These ca p a cito rs are both large and small sized w ith a standard w orking voltage of 330 volts and a tolerance of - 1 0 % to

TRANSISTOR G13

Abstract: C1u TRANSISTOR mrf154 amplifier MRF157
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Power MOS Line Pow er Field E ffect Transistor N-Channel Enhancement Mode Designed primarily for linear large-signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts

Contextual Info: Freescale Semiconductor Technical Data MW4IC915N Rev. 7, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915NB/GNB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage