C756 TRANSISTOR
Abstract: C749 TRANSISTOR transistor c749 transistor C756 D315 transistor diode c749 C752 TRANSISTOR
Contextual Info: International ¡»H Rectifier PD - 5.024A CPV363MU IGBT SIP MODULE Ultra-Fast IGBT Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes Optimized for high operating frequency over 5kHz
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cpv363mu360vdcc-7555s452+8c-756c756 transistorc749 transistortransistor c749transistor c756d315 transistordiode c749c752 transistor
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C752 diode
Abstract: diode c749 C756 TRANSISTOR diode c752 ge motor 752 transistor C756 CPV363MU C749 diode c750
Contextual Info: PD - 5.024A CPV363MU Ultra-Fast IGBT IGBT SIP MODULE Features • • • • 1 Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for high operating frequency over 5kHz
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cpv363mu360vdcc-756c752 diode+7diode c749c756 transistordiode c752ge motor 752transistor c756c749diode c750
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MOSFET 1 KW
Abstract: C752 diode CPV363MU C749 C756 TRANSISTOR C752 TRANSISTOR
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 5.024A CPV363MU Ultra-Fast IGBT IGBT SIP MODULE Features • • • • 1 Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for high operating frequency over 5kHz
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cpv363mu360vdcc-756mosfet 1 kw+4c752 diodec749c756 transistorc752 transistor
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samsung r540
Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Contextual Info: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP
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zd500qf500rhu002n06200ma+16ot-323f820p33x33mm500mhzk4j52324qc512mbitsamsung r540samsung r590r721-r725c732 smd10000nfr616 r617r714-r715samsung r580b16 r649smd q535
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BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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mmbd4148200maot-23mbr0540+16od-1231000mado-214acb340a5245b225mwbc647bc657c1093smd diode c644diode smd c336bc679bc625smd diode c645smd diode c640smd diode r645
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77C7
Abstract: 887c 1r12r
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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ttl 7400
Abstract: pioneer mosfet ic 007 MOSFD100100R40 OPTO SCR blocking Voltage 1600 Volt w9020 powertherm 4604 mosfet teledyne 640 relay LRMOSD50-50R25-H 641-1 teledyne
Contextual Info: CD-ROM MAIN MENU 25 Years of Solid Commercial and Industrial Experience Commercial/Industrial S O L I D S T AT E R E L A Y D ATA B O O K APPLICATIONS: INDUSTRIAL & PROCESS CONTROL HEATER & LIGHT CONTROL AUTOMATION EQUIPMENT ENERGY MANAGEMENT INSTRUMENTATION
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szss20suns8888tel010-81159046fax010-62543996+13tel021-28311762fax021-56703037tel029-81022619ttl 7400pioneer mosfet ic 007mosfd100100r40opto scr blocking voltage 1600 voltw9020powertherm4604 mosfetteledyne 640 relaylrmosd50-50r25-h641-1 teledyne
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R747 diode
Abstract: lm339 pwm mosfet diode C725 transistor C711 C711 TRANSISTOR C745 TRANSISTOR C784 transistor C756 TRANSISTOR R747 BC717
Contextual Info: Application Report SLEA038 – July 2004 Implementation of Power Supply Volume Control Tomas Bruunshuus Texas Instruments Copenhagen ABSTRACT This document gives design guide lines for applications using the power supply volume control PSVC . The power supply volume control increases system performance by:
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slea038r747 diodelm339 pwm mosfetdiode c725+7transistor c711c711 transistorc745 transistorc784 transistorc756 transistorr747bc717
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U952
Abstract: smd diode C751 DBF-1310A C508 DBF1310A zener c351 smd R552 TRANSIENT VOLTAGE SUPPRESSOR R911 R707 C852 diode
Contextual Info: Application Report SLEA034B – December 2007 TAS5508-5121K8EVM Application Report Jonas Svendsen Digital Audio & Video Products The TAS5508-5121K8EVM PurePath Digital customer evaluation amplifier module demonstrates two audio integrated circuits, TAS5508B and TAS5121, from Texas Instruments TI .
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slea034btas5508-5121k8evmtas5508btas5121+14tas5508bpag32-bit24-bit48-bitu952smd diode c751dbf-1310ac508dbf1310azener c351smd r552transient voltage suppressor r911r707c852 diode
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IC P605 8 pin
Abstract: schottky diode c750 p605 ic smd schottky diode c750 AD9272 p605 8pin ic p605 diode p605 8 pins IC P605 C732 SMD
Contextual Info: Evaluation Board User Guide UG-001 One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Evaluating the AD9272/AD9273 for Ultrasound Systems FEATURES DOCUMENTS NEEDED Full featured evaluation board for the AD9272/AD9273
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ug-001ad9272/ad9273ad9272ad9273+13an-905an-878an-877ug07782-0-2/09ic p605 8 pinschottky diode c750p605 icsmd schottky diode c750p605 8pin icp605 diodep605 8 pinsic p605c732 smd
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C3604BD-F
Abstract: EMI500 samsung r540 100nF 50V X7R samsung 1608 resistor r336 r331 r322 r330 r1 B536 c796 b527 B538 c337 pnp
Contextual Info: - This Document can not be used without Samsung's authorization - 10. Part List 1 Internal System 10/100) Internal System(10/100 Mbit) Location R231 SEC Code Name 2007-000070 R-CHIP 0ohm,5%,1/10W,TP,1608, Specification Quantity 1 2007-000171 R-CHIP 0ohm,5%,1/16W,TP,1005,
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512mbit8x2mx32bitk4j52324qchyb18h512321afl+10c3604bd-femi500samsung r540100nf 50v x7r samsung 1608resistor r336 r331 r322 r330 r1b536c796b527b538c337 pnp
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Asus
Abstract: MAX1987 D882 p66 ics954213 FS05J10 PM_DPRSLPVR R6842 q105b alc880 LF8423
Contextual Info: 5 4 3 2 A3E CONTEXT D C B A 01_BLOCK DIAGRAM 02_REVISION LIST 03_DOYHAN CPU 1 04_DOTHAN CPU(2) 05_THERMAL SENSOR,FAN 06_ALVISO GMCH(1) 07_ALVISO PCIE(2) 08_ALVISO DDR SLOT(3) 09_ALVISO POWER(4) 10_ALVISO GND(5) 11_GMCH STRAPPING/LVDS TRANS 12_ICH6M_SATA,LPC,IDE(1)
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ics954213m38857alc880rtl8100cl+14rj11/45r5c841ieee1394a330uf/2v470uf/247pf/50vasusmax1987d882 p66fs05j10pm_dprslpvrr6842q105blf8423
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bc725
Abstract: BC248 BC249 BC195 BC105* BC106* BC107* BC108* BC109* BC110 bc711 BC710 bc188 BC712 BC246
Contextual Info: This Document can not be used without Samsung’s authorization. 9 Schematic Material List 9-1 Main Board Part List Code Location Category Spec 0902-001840 D 730 IC-MICROPROCESSOR 730PGA,1.6GHz,64Bit,uF 3709-001236 J1 CONNECTOR-CARD EDGE 68P,1.27MM,ANGLE,AU
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100nf2k/33ohm220pf10000nf+10bc725bc248bc249bc195bc105* bc106* bc107* bc108* bc109* bc110bc711bc710bc188bc712bc246
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BC249
Abstract: BC248 BC246 bc711 bc725 bc732 BC247 BC217 samsung R519 BC735
Contextual Info: This Document can not be used without Samsung’s authorization. 9 Schematic Material List 9-1 Main Board Part List Code Location Category Spec 0902-001840 D 730 IC-MICROPROCESSOR 730PGA,1.6GHz,64Bit,uF 3709-001236 J1 CONNECTOR-CARD EDGE 68P,1.27MM,ANGLE,AU
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HCB3216K-601T20
Abstract: 2203-000254 R1005 c223 AR517 CDRH104R-100MC R797 R-783 C937 C886 2A AR5112
Contextual Info: Sens Q 20 HJ KIM WS JUNG Kevin APPROVAL CETUS Main BA41-00377A MP 1.0 2003. 4. 24 CHECK : : : : : DRAW Model Name PCB Code Dev. Step Revision T.R. Date CPU :BANIAS LV Chip Set :855GM Remarks : CETUS 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17.
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855gmba41-00377a256mb/128mbadm1032+15400mhz100mhz266ddrzd500-1zd500-2hcb3216k-601t202203-000254r1005 c223ar517cdrh104r-100mcr797r-783c937c886 2aar5112
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IC951
Abstract: stm diode C818 smd diode mx c321 ic501 smd diode ge r803 pin diagram of optical detector IC501 R435 RF receiver MODULE CIRCUIT DIAGRAM LDR 03 PHOTO RESISTOR 2222A SMD transistor C458
Contextual Info: APPLICATION NOTE Fiber optic transceiver demo board STM16 OM5801 AN96051 Philips Semiconductors Philips Semiconductors OM5801 Application Note AN96051 2 Philips Semiconductors Fiber optic transceiver demo board STM16 Application Note AN96051 APPLICATION NOTE
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stm16om5801an96051ic951+9stm diode c818smd diode mx c321ic501smd diode ge r803pin diagram of optical detector ic501r435 rf receiver module circuit diagramldr 03 photo resistor2222a smdtransistor c458
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manual temperature controller CHB 702
Abstract: temperature controller CHB 402 manual transistor C734 diode c649 transistor C640 32C114 diode c741 smd diode c644 smd diode c549 transistor C618
Contextual Info: Octal, 14-Bit, 50 MSPS Serial LVDS 1.8 V A/D Converter AD9252 8 ADCs integrated into 1 package 93.5 mW ADC power per channel at 50 MSPS SNR = 73 dB to Nyquist Excellent linearity DNL = ±0.4 LSB (typical) INL = ±1.5 LSB (typical) Serial LVDS (ANSI-644, default)
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14-bitad9252ansi-644por220-vmmd-4+16063006-b64-leadcp-64-3ad9252bcpz-50ad9252bcpzrl7-501ad9252-50ebz1manual temperature controller chb 702temperature controller chb 402 manualtransistor c734diode c649transistor c64032c114diode c741smd diode c644smd diode c549transistor c618
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R222 smd
Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Contextual Info: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP
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ca-001175ba41-00418aba62-00194aba62-00306a+14ba68-40005l120ohm143ohm/132mhz213ohm/390mhzr222 smdra516-12007-000162ra523-1c627 sot-23smd r54063mild516 gpsmd r618smd c548
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JLCD500
Abstract: BA92-05528B BA61-01090A BA41-01041A BA41-01040A LED520 smd r729 C748 SMD B-509 smd c701
Contextual Info: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 6. Material List Level .1 .1 .1 .1 .1 .1 .1 .1 .1 .1 .1 .1 .2 .3 .3 .3
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ba75-01937aba81-04683aba81-04872asupport-minicard45+10jlcd500ba92-05528bba61-01090aba41-01041aba41-01040aled520smd r729c748 smdb-509smd c701
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transistor C618
Abstract: C705 ANSI-644 C538 diode c750 j303 L612 s m r707 smd diode c521 smd diode C543
Contextual Info: Octal, 12-Bit, 40/50/65 MSPS Serial LVDS 1.8 V A/D Converter AD9222 8 ADCs integrated into 1 package 114 mW ADC power per channel at 65 MSPS SNR = 70 dB to Nyquist ENOB = 11.3 bits SFDR = 80 dBc Excellent linearity: DNL = ±0.3 LSB (typical), INL = ±0.4 LSB (typical)
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12-bitad9222ansi-64464-lead+10cp-64-6transistor c618c705c538diode c750j303l612s m r707smd diode c521smd diode c543
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ge radio c412
Abstract: transistor C734 c619 prone me diode c741 smd diode c644 L603 diode c649 R161 022 C621 GE C712
Contextual Info: Octal, 14-Bit, 50 MSPS, Serial LVDS, 1.8 V ADC AD9252 8 analog-to-digital converters ADCs integrated into 1 package 93.5 mW ADC power per channel at 50 MSPS SNR = 73 dB (to Nyquist) ENOB = 12 bits SFDR = 84 dBc (to Nyquist) Excellent linearity DNL = ±0.4 LSB (typical); INL = ±1.5 LSB (typical)
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14-bitad9252ansi-644mo-220-vmmd-4+16080108-c64-leadcp-64-3ad9252bcpz-50ad9252bcpzrl7-501ad9252-50ebz1ge radio c412transistor c734c619 prone mediode c741smd diode c644l603diode c649r161 022c621ge c712
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smd schottky diode c748
Abstract: diode c649 fa 502 smd diode c644 diode C726 specification C705 C748 SMC diode C725 transistor C732 c606 Schottky diode
Contextual Info: Octal, 14-Bit, 50 MSPS, Serial LVDS, 1.8 V ADC AD9252 8 analog-to-digital converters ADCs integrated into 1 package 93.5 mW ADC power per channel at 50 MSPS SNR = 73 dB (to Nyquist) ENOB = 12 bits SFDR = 84 dBc (to Nyquist) Excellent linearity DNL = ±0.4 LSB (typical); INL = ±1.5 LSB (typical)
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14-bitad9252ansi-644rl7-502+14ad9252bcpz-50ad9252bcpzrl7-502ad9252-50ebz64-leadsmd schottky diode c748diode c649fa 502smd diode c644diode c726 specificationc705c748 smcdiode c725transistor c732c606 schottky diode
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Contextual Info: FEATURES FUNCTIONAL BLOCK DIAGRAM PDWN AVDD 8 ADCs integrated into 1 package 114 mW ADC power per channel at 65 MSPS SNR = 70 dB to Nyquist ENOB = 11.3 bits SFDR = 80 dBc Excellent linearity: DNL = ±0.3 LSB (typical), INL = ±0.4 LSB (typical) Serial LVDS (ANSI-644, default)
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smd diode c644
Abstract: diode c649 smd diode c548 C748 SMC transistor C734 smd diode c549 C706 diode c624 DIODE smd diode C645 diode c741
Contextual Info: Octal, 12-Bit, 40/50 MSPS Serial LVDS 1.8 V A/D Converter AD9222 8 ADCs integrated into 1 package 93 mW ADC power per channel at 50 MSPS SNR = 70 dB to Nyquist ENOB = 11.3 bits SFDR = 84 dBc Excellent linearity DNL = ±0.3 LSB (typical) INL = ±0.4 LSB (typical)
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12-bitad9222ansi-644ad9222bcpz-40+15ad9222bcpzrl7-401ad9222bcpz-501ad9222bcpzrl7-501ad9222-50ebz64-leadsmd diode c644diode c649smd diode c548c748 smctransistor c734smd diode c549c706 diodec624 diodesmd diode c645diode c741
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