C62B Search Results

c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3

C60N

Abstract: GE C150e GE C150 ge c46b C145T GE C150M C45U scr c52u C60M C150 SCR
Contextual Info: PHASE CONTROL S C R ’s HIGH CURRENT 55 TO 200 AM PERES C45, 46 GE T Y P E C145 C50, Ü2 C150, 152 2N1909-1 G 2N1792-98 JEDEC C60, 62 C350 C178 2N2023-30 ELEC TR IC AL SPECIFICATIONS 25*600 VOLTAGE RANGE 500-1200 25-800 500-1300 25-600 500-1300 500-1300 110

C45N equivalent

Abstract: general electric c350 C350 cdi dc with scr for 15 ampere, 12 volt C150P C147D TRANSISTOR D1651 General electric SCR C147M C147 C45U
Contextual Info: 109 PHASE CONTROL SCR's 63 TO 190 AMPERES C45, 46 G E TYPE C147 C 50, 52 C l 50, 152 C 60, 62 2N 1909-16 2 N 1792-98 JEOEC C350 2N 2023-30 E L E C T R IC A L S P E C IFIC A TIO N S |V O L T A G E RA NG E 2b 1200 II 25-1200 25 120Ü 500-1300 25 500 1} 500 -13 00

C150 SCR

Abstract: General Electric C152p General electric SCR C150 C152P C152 C45E 3tf 46 TRANSISTOR D1651 C147 C147U
Contextual Info: 109 PHASE CONTROL SCR's 63 TO 190 AMPERES C45, 46 G E TYPE C147 C 50, 52 C l 50, 152 C 60, 62 2N 1909-16 2 N 1792-98 JEOEC C350 2N 2023-30 E L E C T R IC A L SP E C IFIC A TIO N S |V O L T A G E R A N G E 2b 1200 II 25-1200 25 120Ü 500-1300 25 500 1} 500 -13 00

c458

Abstract: LT 500-T C147N C520 NL-579C SCR C137 c137t C52T C45B C520 A/D
Contextual Info: RICHARDSON/ NATIONAL ELEK ,-QBE D • 7734=117 □□□□500 T ■ NAT - p « S S Ol PHASE CONTROL SCR’S NATIONAL TYPE NO. V C l 37 4 ’ " ' ! JEDECNO, s : i RMS on state current A max. 35 VOLTAGE RANGE lT(AV)Amps @ 180 conduction @ To I tsm Peak one cycle

Telemecanique LIMIT SWITCH XCK-J

Abstract: Telemecanique LIMIT SWITCH NFC 63-140 Telemecanique LIMIT SWITCH nfc 63-145 y2 XCK-J EN 60947-5-1 XCM NFC 63-145 y2 Telemecanique LIMIT SWITCH XCK-J 59 Telemecanique LIMIT SWITCH XCK-p Telemecanique LIMIT SWITCH XCK-J IEC 337-1 NFC 63 telemecanique xck-p IEC 60947-5-1 xck-j
Contextual Info: Farnell Codes 423 2884-2902 425 3711-3723 Table of Contents 425 3772-3784 Section 19 425 3814-4557 Limit Switches 425 4569-4594 Current Ratings and Application Data 9007C 19-2 Heavy Duty Industrial Limit Switches Class 9007 Type C oiltight, watertight switches, compact and reed

TIC2260

Abstract: C10601 SC141D IN5829 IN3492 in540i IN1190 IN3493 IN1183A IN1184
Contextual Info: G EN ERA L PURPOSE R ECTIFO SS 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82 ÍE1 02553511 n""""35 11 I 820 00035 o r~ Of-o / lo AVERAGE RECTIFIED FORWARD CURRENT AMPERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200 IFSM VFM Ca s é 3 3 5 6 MR500

General electric SCR C147M

Abstract: C147N C147pb SCR C147PB GE C147P GE C150 C147 C52U C147D GE C147S
Contextual Info: 109 PHASE CO N T R O L SCR's 63 TO 190 AMPERES C45, 46 G E TYPE C147 C 50, 52 C l 50, 152 C 60, 62 2 N 1909-16 2 N 1792-98 JEOEC C350 2N 2023-30 E L E C T R IC A L S P E C IFIC A TIO N S |V O L T A G E RA NG E 2b 1200 II 25-1200 25 120Ü 500-1300 25 500 1}

General Electric SCR C52T

Abstract: C52 SCR General electric SCR c50 General electric SCR C52 c52m 50 20 500 C52T scr c52u scr C50 C52 "SCR" C52E
Contextual Info: 109 PHASE CO N T R O L SCR's 63 TO 190 AMPERES C45, 46 G E TYPE C147 C 50, 52 C l 50, 152 C 60, 62 2 N 1909-16 2 N 1792-98 JEOEC C350 2N 2023-30 E L E C T R IC A L S P E C IFIC A TIO N S | V O L T A G E RA NG E 2b 1200 II 25-1200 25 120Ü 500-1300 25 500 1}

C45E

Abstract: C147U C45U C45PB C150PA scr stud 280 C150PB C52T N2030 C46D
Contextual Info: 109 PHASE CONTROL SCR's 63 TO 190 AMPERES C 45, 46 GE TYPE C147 C 5 0 , 52 C l 50, 152 2N1909-16 2N 1792-98 JE O E C C350 C 6 0 , 62 2N 2023-30 E L E C T R IC A L S P E C IFIC A T IO N S | V O LTA G E RAN GE 2b 1200 II 25-1200 2 5 120Ü 500-1300 25 500 1}

61a17

Abstract: E11AB BFE 81A
Contextual Info: 123456789 1 2ABBCD91BCEFE9ECBE1 9 1 92DBB9 1 BB9BCAE9 716351B7B7978916789ABC91871787BA81 977E1 81 8A1 D !1 "71 981 BAE799ABF1 71 6351 91 79871 A1 #B81 1 7B$AB"8E71 977E1D !1$7%B791A1EA919789&71 7"#771 81

HM514101CS

Abstract: HM514101C 5S50W Hitachi DSA0088
Contextual Info: HM514101C/CL Series Preliminary 4,194,304-word x 1-bit Dynamic Random Access Memory Rev. 0.0 Sep. 15, 1994 The Hitachi HM514101C/CL is a CMOS dynamic RAM organized 4,194,304-word x lbit. HM514101C/CL has realized higher density, higher performance and various

Solid state CCIR ca 152

Abstract: 57B8 MSK 5000 ENCODER c4fm ETS-300-086 d880 APCO 25 CC5F Solid state CCIR ca 151 560B PLL
Contextual Info: CMX880 Baseband Processor For Mixed Mode Land Mobile Radio D/880/1 February 2001 Advance Information Features Applications • CQPSK/C4FM Modem • APCO 25 LMR Terminals • FFSK/MSK Modem, 1200/2400 bps • Multiple Analogue PMR Modes • CTCSS and Selcall Tone Codecs

c4fm

Abstract: TONE ctcss APCO-25 57B8 APCO25 B226 cqpsk receiver block diagram 1200Baud 55D9 Solid state CCIR ca 152
Contextual Info: CMX880 COMMUNICATION SEMICONDUCTORS Baseband Processor for Mixed Mode Land Mobile Radio DATA BULLETIN ADVANCE INFORMATION Features Radio Terminal Applications • Dual Mode Digital/Analog Baseband Engine • APCO P25 ‘Project 25’ • Digital Modems •

scr c45h

Abstract: C60D C60H C150M SCR trigger circuit C45U 2N2024 C147D General Electric SCR C52T C150PC C60F
Contextual Info: 109 G E TYPE PHASE CONTROL SCR's 63 TO 190 AMPERES C 45, 46 C147 C 5 0 , 52 C l 50, 152 C350 C 6 0 , 62 2N1909-16 2N 1792-98 JEO EC 2N 2023-30 E LE C T R IC A L SPECIFICATIONS | VO LTAGE RANGE 2b 1200 I I 25-1200 25 120Ü 500-1300 25 500 1} 500-1300 FORWARD CONDUCTION

c45 scr

Abstract: scr C50 C46U C46C C46M TRANSISTOR D1651 2N1909 C147 C147U C350
Contextual Info: 109 PHASE CONTROL SCR's 63 TO 190 AMPERES C45, 46 G E TYPE C147 C 50, 52 C l 50, 152 2N 1909-16 2 N 1792-98 JEOEC C 60, 62 C350 2N 2023-30 E L E C T R IC A L S P E C IFIC A TIO N S |V O L T A G E RA NG E 2b 1200 II 25-1200 25 120Ü 500-1300 25 500 1} 500 -13 00

SCR C60

Abstract: TRANSISTOR D1651 2N2023 2N2024 2N2025 C60A C60F C60U C62A C62F
Contextual Info: SCR C60.2 500 Volts 110 A RMS The General Electric C60 2N 2023-2N 2030 and C62 Series Silicon Con­ trolled Rectifiers are designed for high-current operation at extreme tem­ peratures. Rated as high as 110 amperes DC—with a maximum junction temperature of 150°C—they are especially suited for applications where

TIC2260

Abstract: t25000 IN1190 IN5829 IN3492 IN1184A sc1430 jb33 IN2158 in5834
Contextual Info: G E K E R A LP U R P O S E R EC TïFISR S 0258354 A D VA N CED S E M IC O N D U C T O R 82 tEl Q25a3Sl<0000035 ° I 82D 00035 o r - o / - o f lo AV ER A G E R ECTIFIED FORW ARD C U R R EN T AM PERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200

C50N

Abstract: NL-578D C45PB nl579a C137D C45M 579a C45E C60E C147A
Contextual Info: PHASE CONTROL SCRs RICHARDSON/ N A T I O N A L EL b2E D C137 NATIO N AL TYPE NO. • C147 7 7 3 4 11 7 0 0 D 0 7 Q Q TS4 ■ C50 C52 2N1911-16 2N1805-07 2N17931804 C45 C46 NL-S78 NL-579 JEDEC NO. NAT C50X500 C52X500 C60 C62 2N2025-30 35 63 63 80 110 110 110

TIC2260

Abstract: IN3491 IN1202 IN3492 IN5829 IN1204 IN1190 IN1184 SC141D IN3495
Contextual Info: r lo AVERAGE RECTIFIED FORWARD CURRENT AMPERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200 IFSM VFM Ca s é 3 3 5 6 MR500 MR501 IN5400 IN5401 ÍN1612 IN1613 MR502 IN5402 IN1614 IN1341A IN1342A IN1343A IN1344A MR504 IN5404 ¡N1615 MR506 IN5406

T60403-D4615-X054

Abstract: T60403-D4615 D72B ff450r12me3 IGBT DRIVER SCHEMATIC 2ED100E12 FF450R06ME3 2ED100E12-F IGBT DRIVER Analog Devices TD350 tyco igbt module
Contextual Info: A p p li c at i o n N o t e, V1. 0 , May. 2 0 0 6 AN2006-04 2 E D1 0 0E 1 2 -F Evaluation Driver Board for EconoDUALTM IGBT Modules AIM PMD ID AE Edition 2006-11-20 Published by Infineon Technologies AG 59568 Warstein, Germany Infineon Technologies AG 2006.

Contextual Info: C62B C62B Rev. A Silicon Errata Sheet The C62B Rev. A parts you have received conform functionally to the Device Data Sheet (DS35008A), except for the anomalies described below. All the problems listed here will be addressed in future revisions of the C62B silicon.