C51N Search Results

Contextual Info: RCD051N20 Data Sheet Nch 200V 5.0A Power MOSFET lOutline VDSS 200V RDS on (Max.) 760mW ID 5.0A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit 1) Low on-resistance. 3) Drive circuits can be simple. (1) Gate (2) Drain (3) Source 4) Parallel use is easy.

Contextual Info: RCD051N20 Nch 200V 5.0A Power MOSFET Data Sheet lOutline VDSS 200V RDS on (Max.) 760mW ID 5.0A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit 1) Low on-resistance. 3) Drive circuits can be simple. (1) Gate (2) Drain (3) Source 4) Parallel use is easy.

Contextual Info: RCD051N20 Datasheet Nch 200V 5.0A Power MOSFET lOutline VDSS 200V RDS on (Max.) 760mW ID 5.0A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit 1) Low on-resistance. 3) Drive circuits can be simple. (1) Gate (2) Drain (3) Source 4) Parallel use is easy.

80c31n

Abstract: IS80C51 i80c51 80c31 mhs 80c51/31 MHS
Contextual Info: P R E V IE W M l DATA SHEET_ _8 0 C 3 1 U / 8 0 C 5 1 u HIGH SPEED 0 to 42 MHz SINGLE-CHIP 8 BIT MICROCONTROLLER 80C31|i : ROMLESS VERSION OF THE 80051^1 80C31 ji/80C51 n-S : 0 TO 20 MHz 80C31 |i-S/80C51 (i-25 : OTO 25 MHz 80031p/80C51|i-30 :0 TO 30 MHz

GRM188F11E104ZA01D

Abstract: AN3247 C53l GRM188B11H103KA01D r17n C61N C42L R46n C51N SPIGen for parallel port
Contextual Info: Transportation and Standard Product Group Analog Products Division PACKING LIST - KIT CONTENTS KIT18730EPEVBE 1.15V/2.4V 2-CH DC to DC Converters with 3 Low Dropout Regulators QUANTITY 1 REVISION CD - ROM Documentation Package for KIT18730EPEVBE Notice Instructions

Contextual Info: RCD051N20 Nch 200V 5.0A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 760mW ID 5.0A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit 1) Low on-resistance. 3) Drive circuits can be simple. (1) Gate (2) Drain (3) Source 4) Parallel use is easy.

Contextual Info: 5 | M IT E L SP5659 _ 2-7GHz l2C Bus Low Phase Noise Synthesiser SEMICONDUCTOR a u v n u u i^ u u iu n n - in a ry iInt form atio *• n P rerlim S u p e rs e d e s M a rch 1996 ve rs io n , D S 4 2 0 6 -1 .8 T he S P 5 659isasinglechipfrequency synthesiser designed

sot428 Part marking

Contextual Info: RCD051N20 RCD051N20 Datasheet Nch 200V 5.0A Power MOSFET lOutline VDSS 200V RDS on (Max.) 760mW ID 5.0A PD 20W lFeatures CPT3 (SC-63) <SOT-428> (3) (2) (1) lInner circuit 1) Low on-resistance. 3) Drive circuits can be simple. (1) Gate (2) Drain (3) Source