C50J Search Results
C50J Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| C50J | Sensitron Semiconductor | AUTOMOTIVE RECTIFIER | Original | 85.09KB | 6 | ||
| C50J | Won-Top Electronics | 50A AUTOMOTIVER RECTIFIER CELL | Original | 22.67KB | 2 |
C50J Price and Stock
Nichicon Corporation NRC50J160TR16FResistor: thick film |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NRC50J160TR16F | 1,312,000 | 3,247 |
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Buy Now | ||||||
Vishay Intertechnologies RNC50J5421BSB14Resistor: thin film; 5.42kΩ; 100mW; ±0.1%; -65÷175°C |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RNC50J5421BSB14 | 400 | 35 |
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Buy Now | ||||||
Vishay Intertechnologies RNC50J2001BSB1431Resistor: metal film; 2kΩ; ±0.1%; -65÷175°C; axial; L: 0.0038mm |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RNC50J2001BSB1431 | 299 | 35 |
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Buy Now | ||||||
Vishay Intertechnologies RNC50J1842BSBSLResistor: thin film; 18.4kΩ; 100mW; ±0.1%; -65÷175°C |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RNC50J1842BSBSL | 100 | 12 |
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Buy Now | ||||||
electro-PJP 2712-IEC-50JTest lead: single; 20A; banana plug 4mm,both sides; Urated: 1kV |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2712-IEC-50J | 1 |
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Get Quote | |||||||
C50J Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
C3502
Abstract: c3504 C25M diode C2502 C3502 transistor c3501 C2503 c2504 C2501 C25M
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Original |
ld5006do-21pf5000pf5001+15 | |
blm18Pg471SH
Abstract: BLM18HG471SH NFM21HC223R1H3 BLM18HD601SH1 BLM41PG181SH1 BLM18PG121SH1 NFM21HC474 NFE61HT181 BLM18PG471SH1 BLM21AG102SH1
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Original |
c50j1c50-1blm15a/18a/21ablm15b/18b/21b+15 | |
cell phone
Abstract: C50A C50M working OF IC 723 single LOAD CELL C50B C50D C50G C50J C50K
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Original |
cell phonec50ac50mworking of ic 723+6 | |
hp 5082 2711
Abstract: 5082-2711
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OCR Scan |
4447shp 5082 27115082-2711 | |
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Contextual Info: 4 2 3 m O on 1 7 ° >; ^ 1 6 .< (M O U N T IN G a (NOTES) I' D IM E N S IO N S 1 . « / p ., 1 . 6 < P .C .0 . i o 2. FOR [2 ] P .C .B O A R D ) ±0.15 T H IC K fC S S ,1 .6 ) to . i ±0 . 1 < TOLERANCES, ) - 3 . 1 5 Ji J 15 Jl 0 I 15 H '«rrsi U) 00 +1 |
OCR Scan |
c50js66nyl0n | |
information applikation
Abstract: A109D information applikation mikroelektronik B303D Mikroelektronik Information Applikation B222D B260D "halbleiterwerk frankfurt" "Mikroelektronik" Heft mikroelektronik heft
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OCR Scan |
information applikationa109dinformation applikation mikroelektronikb303d+6 | |
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Contextual Info: C50A – C50K 50A AUTOMOTIVE CELL DIODE WON-TOP ELECTRONICS Pb Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber |
Original |
c50ar | |
c50a
Abstract: C50B C50D C50G C50J C50K
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Original |
c50arc50ac50bc50d+3 | |
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Contextual Info: TOSHIBA 2SK1489 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt- M O S I I 5 2 S K 1 489 CHOPPER REGULATOR APPLICATIONS INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS • • • • Low Drain-Source ON Resistance : Rd S(O N )~0-£S-^ (Typ.) |
OCR Scan |
2sk1489300/ma20kil | |
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Contextual Info: C50A – C50K WTE POWER SEMICONDUCTORS Pb 50A AUTOMOTIVE CELL DIODE Features ! Diffused Junction ! ! ! ! Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX D Anode + C E |
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c50ar | |
TLP3062AContextual Info: T O SH IB A TLP3061 S ,TLP3062(S),TLP3063(S) TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRIAC TLP306KS), TLP3062ÍS), TLP3063(S) Unit in mm OFFICE MACHINE HOUSEHOLD USE EQUIPMENT TRIAC DRIVER <;ni in 3 2 1 TI TF IT s t a t f rfi a y JJ U LL The TOSHIBA TLP3061 (S), TLP3062 (S) and TLP3063 (S) consist of |
OCR Scan |
tlp3061tlp3062tlp3063tlp306ks+1 | |
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Contextual Info: C50A – C50K WTE POWER SEMICONDUCTORS Pb 50A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated |
Original |
c50ar | |
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Contextual Info: C50A – C50K WTE POWER SEMICONDUCTORS Pb 50A AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber Terminal: Copper Disc with Ag Plated |
Original |
c50ar |