C5 155 10 Search Results

Contextual Info: Fiber Optics 3.3 V Single Mode 155 MBd ATM/SDH/SONET 2x9 Transceiver with Rx Monitor V23806-A84-C5 Features • Compliant with ATM, SONET OC-3, SDH STM-1 • Compact integrated transceiver unit with – MQW laser diode transmitter – InGaAs PIN photodiode receiver

V23806-A84-C5

Abstract: B78108-S1153-K optical module 2X9
Contextual Info: V23806-A84-C5 3.3 V Single Mode 155 MBd ATM/SDH/SONET 2x9 Transceiver with Rx Monitor Dimensions in mm inches (11.5 max) .453 max. View Z (Lead cross section and standoff size) PC board thickness (2) .080 Optical Centerline (1.5±0.1) .06±.004 (0.73±0.1)

A84 diode

Abstract: B78108-S1153-K V23806-A84-C5 analog transmitter circuit using laser diode
Contextual Info: V23806-A84-C5 3.3 V Single Mode 155 MBd ATM/SDH/SONET 2x9 Transceiver with Rx Monitor Dimensions in mm inches (11.5 max) .453 max. View Z (Lead cross section and standoff size) PC board thickness (2) .080 Optical Centerline (1.5±0.1) .06±.004 (0.73±0.1)

analog transmitter circuit using laser diode

Abstract: V23806-A84-C5 V23806-A84-C6 B78108-S1153-K transmitter circuit using laser diode Tx 433 with three pins
Contextual Info: V23806-A84-C5 5 V V23806-A84-C6 3.3 V Single Mode 155 MBd ATM 2x9 Transceiver with Rx Monitor Dimensions in mm inches (11.5 max) .453 max. View Z (Lead cross section and standoff size) PC board thickness (2) .080 Optical Centerline (1.5±0.1) .06±.004 (0.73±0.1)

Contextual Info: SIEMENS V V23806-A84-C5 33 Single Mode 155 MBd ATM 2x9 Transceiver w ith Rx Monitor Absolute M axim um Ratings Exceeding any one o f th e se values m ay d e stro y th e device im m e dia te ly. Package Pow er D issipation*1 . 1.5 W

Contextual Info: ASX415 250 ~ 4000 MHz MMIC Amplifier 4 Features Description  14 dB Gain at 2000 MHz  27 dBm P1dB at 2000 MHz  42 dBm OIP3 at 2000 MHz  ACLR @ WCDMA 4FA: -51 dBc @ Pout = +13 dBm, +/- 5 MHz offset  MTTF > 100 Years  Single Supply The ASX415, a power amplifier MMIC, has a high

tq crystal

Abstract: CD4045 CMOS 4045 CD4045AD contador 21 stage counter 40N25 4045 4045BPC 4045BDM
Contextual Info: 2 1 -stufiger Zähler 21 -Stage Counter Compteur B 21 etages Contatore a 21 stad1 Contador de 21 pasos Tl t -Ta 1611 15 I I Sp Sn CMOS 4045 F 1 14 ] 1 13 1 1 12 1 11 1 10 11 GRENZDATEN TYP Type Type Tip0 Tfpo Hersteller Manufatk Fabricants Produttori FabRcanteS

VS648

Abstract: vs447 VS847 varo VS247 Varo Semiconductor VS247 VJ148 VS647 Vj248 varo VS247 VS148
Contextual Info: VARO SEMICONDUCTOR, INC. G P.O. BOX 676, 1000 N. SHILOH, GARLAND, TEX. 75040 214 272-4551 TWX 910-860-5178 EPOXY BRIDGE RECTIFIERS 1 AMP 2 & 6 AMP 10 AMP • Controlled Avalanche series has 250V, 450V, 650V and 850V minimum avalanche volt­ age8 (V br) ■ Non-controlled Avalanche series with 50V,

TC1776

Abstract: rnc75 RFM73 smd marking code s82 RY16 RJM73 RJM74P RJ73 RNC65 Ceratech
Contextual Info: BS EN ISO9001:2000 FM51927 ULTRA HIGH STABILITY EE1/20, EE1/10, EE1/8 MOLD TYPE RESISTORS EE1/4, EE1/2 FEATURES • Advanced thin film technology · Very low TCR: lower than ±5ppm/℃. · Tolerance up to ±0.02% · Excellent overall stability: Class 0.025

Contextual Info: 155 Mbps Bi-directional Single Fiber Transceiver B-1x/1x-155S-TPM3-SSC4-102 Features • Coaxial single mode single fiber package with SC connector • Wavelength Tx 1310nm / Rx 1550nm B-13/15-155S-TPM3-SSC4-102 • Wavelength Tx 1550nm / Rx 1310nm (B-15/13-155S-TPM3-SSC4-102)

Contextual Info: QS8886A Q • • • • • • High-Speed CMOS 16Kx4 SRAM with Output Enable High Speed Access and Cycle times 8ns/10ns/12ns/15ns Commercial 10ns/12ns/15ns/20ns Military Output Enable feature Low power, high-speed QCMOS technology Military product compliant to MIL-STD-883, Class B

Contextual Info: Document Number: MRF1570N Rev. 10, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these

AN215A

Abstract: z15 Diode glass diode marking c34 Z15 marking diode 2.4 agc 130 watts power amplifier schematic marking us capacitor pf l1 marking Z4 A113 AN1907 AN211A
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 10, 6/2009 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these

Contextual Info: Multimode 155Mbps 2x10 SFF Optical Transceiver Features • LC duplex receptacle • Standard 2 x 10 footprint • 850nm VCSEL transmitter with automatic • • • • • power control Laser bias and power monitor AC or DC coupled LVPECL/PECL compatible

Contextual Info: KM64B1003 BiCMOS SRAM 256Kx4 Bit With ÜE High-Speed BiCMOS Static RAM FEATURES .;^ •! ; GENERAL DESCRIPTION • Fast Access Time 8,10,12,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60mA(max.) (CMOS): 10 mA(max.) Operating KM64B1003J- 8:165 mA(Max.)

MAX954

Abstract: F226 DCM103
Contextual Info: * MAX954 FAMILY MACROMODELS * -* FEATURES: * Op Amp + Comparator * 7uA Typical Supply Current * Comparator and Op Amp Input Range Includes Ground * Outputs Swing Rail to Rail * Internal Comparator Hysteresis * Op Amp Gain Stability 10V/V

AN721

Abstract: MRF1518NT1 A113 AN211A AN215A AN4005 EB212 MRF1518N j327 transistor J016
Contextual Info: Freescale Semiconductor ‘Technical Data Document Number: MRF1518N Rev. 10, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF1518NT1 Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device

Contextual Info: Single-mode 155Mbps 2X10 SFF Transceiver Features • LC duplex receptacle • Standard 2 x 10 footprint • 1310nm or 1550nm laser transmitter • • • • • with automatic power control Laser bias and power monitor AC or DC coupled LVPECL/PECL compatible

Contextual Info: KM68B1002 BiCMOS SRAM 128Kx8 Bit High-Speed BiCMOS Static RAM GENERAL DESCRIPTION • Fast Access Time 8,10,12,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(max.) (CMOS): 10 nnA(max.) Operating KM68B1002J-8 :175mA(Max.) KM68B1002J-10: 165 mA(Max )

Contextual Info: KM64V1003A CMOS SRAM 256K x 4 Bit With OE High-Speed CMOS Static RAM (3.3V Operating) GENERAL DESCRIPTION FEATURES • Fast Access Time 12,15,17,20 ns(Max ) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM64V1003A-12: 160mA(Max.)

J449

Abstract: AS030721-39N J657 korin 3214W-1-103E DB-84006L-175 EXCELDRC35C PD84006L-E transistor l54 J387
Contextual Info: DB-84006L-175 Evaluation board using PD84006L-E for VHF 2-way radio Features • Excellent thermal stability ■ Frequency: 135 - 175 MHz ■ Supply voltage: 7.2 V ■ Output power: 5 W ■ Power gain: 14.0 ± 0.8 dB ■ Efficiency: 59 % - 68 % ■ Load mismatch: 10:1 all phases

Contextual Info: PRELIMINARY CMOS SRAM KM64V1001A 2 5 6 K x 4 Bit With OE High-Speed CMOS Static RAM (3.3V Operating) GENERAL DESCRIPTION FEATURES • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM64V1001A-15 : 160 mA (Max.)

QS8888

Contextual Info: QS8888 High-Speed CMOS 16Kx4 SRAM with Common I/O Q FEATURES/BENEFITS High Speed Access and Cycle times 8ns/10ns/12ns/l5ns/20ns/25ns Commercial 12ns/15ns/20ns/25ns/35ns Military TTL compatible I/O Low power, high-speed QCMOS technology Military product compliant to MIL-STD-883, Class B

905-170

Abstract: MRF3010 VK200 VK20019-4B
Contextual Info: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,