C4 DIODE Search Results

30U6P42

Abstract: MG15G6EL1 30L6P44 12v dc to 440v ac inverter EI40 transformer 76524P 12v dc choke inverter circuit MG60M1AL1 TA76524 TDK transformer z
Contextual Info: 1. Power MOS-FETs and C4 . Resistors R2 and R 3 are used to balance the C3 and C4 voltages and 20ki2 is used here as the resistance value. C3 and C4 each have a capacitance o f 470juf. 2 Auxiliary power supply for the control cir­ cuit The switching regulator IC TA76524P which

CM1218

Abstract: CM1218-C4SE LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR SMT marking R4C
Contextual Info: CM1218-C4 Low Capacitance Transient Voltage Suppressors / ESD Protectors Features Product Description • • • The CM1218-C4 device features transient voltage suppressor arrays that provide a very high level of protection for sensitive electronic components which

LC32020

Abstract: LC32016 power mosfet module n-channel 500w power mosfet
Contextual Info: MNT - LC32016 - C4 MNT - LC32020 - C4 MECHANICAL DATA Dimensions in mm POWER MOSFET MODULE FOR HIGH POWER AUDIO APPLICATIONS 51.0 57.0 7.0 28.0 10.0 TYP Ø 4.25 2 POSN FEATURES • P - CHANNEL POWER MOSFETS 6.35 TYP • N - CHANNEL POWER MOSFETS • HIGH SPEED SWITCHING

igbt F4 400 R 12 Kf4

Abstract: diode F4 11
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information F4 400 R 12 KF4 61,5 18 130 31,5 114 A B + + - - C2 C1 C4 G2 G1 G4 E2 E1 26,4 G3 E4 E3 5 7 C3 4 tief 3,35 15 5,5 external connection to be done + C1 C3 G1 G3 E1 E3 C2 C4 G2 G4 E2 + A

APT0502

Abstract: APTGT50TDU170PG
Contextual Info: APTGT50TDU170PG Triple Dual Common Source Trench + Field Stop IGBT Power Module G3 E1 G5 E5 E3 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 G1 E1/E2 C2 E1 E3 G5 E5/E6 IC ICM VGE PD RBSOA E5 E2 E4 E6 G2 G4 G6 C4 C6 Absolute maximum ratings Symbol VCES

APTGT50TDU60P

Abstract: MJ480
Contextual Info: APTGT50TDU60P Triple Dual Common Source Trench + Field Stop IGBT Power Module G5 E3 E1 E5 E1/E2 E3/E4 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 G3 G1 E1/E2 C2 E1 C5 E3/E4 E3 G5 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Features • Trench + Field Stop IGBT® Technology

igbt 600V

Abstract: APT0502 APTGT75TDU60PG
Contextual Info: APTGT75TDU60PG Triple Dual Common Source Trench + Field Stop IGBT Power Module G3 E1 G5 E5 E3 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 E1/E2 C2 C6 C3 C5 G1 G3 E1 E3 E3/E4 G5 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Features • Trench + Field Stop IGBT® Technology

APTGT150TDU60P

Contextual Info: APTGT150TDU60P Triple Dual Common Source Trench + Field Stop IGBT Power Module G3 E1 G5 E5 E3 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 G1 E1/E2 C2 E1 C5 G5 G3 E3/E4 E3 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Features • Trench + Field Stop IGBT® Technology

APTGT75TDU60P

Contextual Info: APTGT75TDU60P Triple Dual Common Source Trench + Field Stop IGBT Power Module G3 E1 G5 E5 E3 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 E1/E2 C2 C6 C3 C5 G1 G3 E1 E3 E3/E4 G5 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Features • Trench + Field Stop IGBT® Technology

APT0502

Abstract: APTGT100TDU60PG IGBT triple modules 100A
Contextual Info: APTGT100TDU60PG Triple Dual Common Source Trench + Field Stop IGBT Power Module G3 E1 G5 E5 E3 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 G1 E1/E2 C2 E1 C5 G5 G3 E3/E4 E3 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Features • Trench + Field Stop IGBT® Technology

APTGT100TDU60P

Contextual Info: APTGT100TDU60P Triple Dual Common Source Trench + Field Stop IGBT Power Module G3 E1 G5 E5 E3 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 G1 E1/E2 C2 E1 C5 G5 G3 E3/E4 E3 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Features • Trench + Field Stop IGBT® Technology

APT0502

Abstract: APTGT150TDU60PG SP6-P
Contextual Info: APTGT150TDU60PG Triple Dual Common Source Trench + Field Stop IGBT Power Module G3 E1 G5 E5 E3 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 G1 E1/E2 C2 E1 C5 G5 G3 E3/E4 E3 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Features • Trench + Field Stop IGBT® Technology

APTGF50TDU120PG

Abstract: APT0502
Contextual Info: APTGF50TDU120PG Triple dual Common Source VCES = 1200V IC = 50A @ Tc = 80°C NPT IGBT Power Module C5 C3 G1 G3 E1 E3 G5 E5 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 G1 E1/E2 C2 E1 C5 G5 G3 E3/E4 E3 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Features • Non Punch Through NPT FAST IGBT

APT0502

Abstract: APTGF90TDU60PG
Contextual Info: APTGF90TDU60PG Triple dual Common Source VCES = 600V IC = 90A @ Tc = 80°C NPT IGBT Power Module G1 G3 E1 E3 G5 E5 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 G1 E1/E2 C2 E1 C5 G5 G3 E3/E4 E3 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Features • Non Punch Through NPT Fast IGBT

Bb142

Abstract: marking code 4 SC-79
Contextual Info: LESHAN RADIO COMPANY, LTD. Low-voltage variable capacitance diode BB 142 FEATURES • Excellent linearity · Ultra small plastic SMD package · C4: 2.05 pF; ratio: 2.2 · Low series resistance. APPLICATIONS · Voltage controlled oscillators VCO . DESCRIPTION

FMMT3903

Abstract: BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33 BFQ31 BFQ31A
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS Device Type Standard marking BCV71 K7 BCV72 K8 BCW29 C1 C2 BCW30 BCW31 TRANSISTORS Reverse Joggle m arking Device Type K6 K9 C4 Standard marking Reverse Joggle marking BFQ31 S2 S3

Contextual Info: Low-voltage variable capacitance diode BB 142 FEATURES • Excellent linearity · Ultra small plastic SMD package · C4: 2.05 pF; ratio: 2.2 · Low series resistance. APPLICATIONS · Voltage controlled oscillators VCO . DESCRIPTION The BB142 is a variable capacitance

Contextual Info: Low-voltage variable capacitance diode BB 141 FEATURES • Excellent linearity · Ultra small plastic SMD package · C4: 2.38 pF; ratio: 1.76 · Low series resistance. APPLICATIONS · Voltage controlled oscillators VCO . DESCRIPTION The BB141 is a variable capacitance

1SV325

Contextual Info: 1SV325 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV325 TCXO/VCO Unit: mm • High capacitance ratio: C1 V/C4 V = 4.3 typ. • Low series resistance: rs = 0.4 Ω (typ.) • Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C) Characteristics

1SV322

Contextual Info: 1SV322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV322 TCXO/VCO Unit: mm • High capacitance ratio: C1 V/C4 V = 4.3 typ. • Low series resistance: rs = 0.4 Ω (typ.) • Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: 1SV322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV322 TCXO/VCO Unit: mm • High capacitance ratio: C1 V/C4 V = 4.3 typ. · Low series resistance: rs = 0.4 Ω (typ.) · Useful for small size tuner. Maximum Ratings (Ta = 25°C) Characteristics Symbol

1SV324

Contextual Info: 1SV324 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV324 TCXO/VCO Unit: mm • High capacitance ratio: C1 V/C4 V = 4.3 typ. • Low series resistance: rs = 0.4 Ω (typ.) • Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C) Characteristics

1SV323

Contextual Info: 1SV323 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV323 TCXO/VCO Unit: mm • High capacitance ratio: C1 V/C4 V = 4.3 typ. • Low series resistance: rs = 0.4 Ω (typ.) • Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C) Characteristics

secos gmbh

Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3