k 3878
Contextual Info: EURO CASSETES C3800 Series 2 0 0 0 - 2 5 0 0 W AT T A C / D C - D C / D C - B AT T E R Y C H A R G E R S S I N G L E O U T P U T FEATURES • • • • • • • • DC input 18 - 800 V AC input 1 or 3-phase, 47 - 400 Hz DC output 12-400V Continuous short circuit protection
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SA452
Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Contextual Info: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this
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am29lv2562ms29gl512nsa452sa336+7sa424120rsa487ee8000a78000a7ffffc58000c5ffffsa4871
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BA379
Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
Contextual Info: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz
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k8a5615et54mhz22ech22fch+1422edh22fdhk8a56156et70ns---ba379ba377ba339ba438ba429ba416ba-302ba512ba308ba324
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asme SA388
Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
Contextual Info: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ
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s29gl-ms29gl256ms29gl128ms29gl064ms29gl032ms29gl128ms29gl128ns29gl256ms29gl256n+14s29glxxxn00-b-5s29gl032mlaa064asme sa388gl128ma2113s29gl256e78000s29gl128ntsop56 s29gl128nsa32sa35s29glxxxmbga-63
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equivalent sd 4841
Abstract: FFA70 K C2800 Y GR-253-CORE* K1 K C2800 Y pin configuration transistor c2800 GR253-CORE PM5347 APS software TBA 2800
Contextual Info: PM5347 S/UNI-PLUS PRELIMINARY REFERENCE DESIGN PMC- 971116 ISSUE 2 APS SOFTWARE REFERENCE DESIGN PM5347 AUTOMATIC PROTECTION SWITCHING APS SOFTWARE REFERENCE DESIGN PRELIMINARY ISSUE 2:FEBUARY 1997 PMC-Sierra, Inc. 105 - 8555 Baxter Place Burnaby, BC Canada V5A 4V7 604 .415.6000
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pm5347pm-971116equivalent sd 4841ffa70+7k c2800 ygr-253-core* k1k c2800 y pin configurationtransistor c2800gr253-coreaps softwaretba 2800
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120R
Abstract: C8800
Contextual Info: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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mcp67m
Abstract: MCP67MV MCP67D MCP67MV- A2 c5304 asus nvidia mcp67 MCP67 C9236 ricoh r5c833
Contextual Info: A B C D E A8N_A8Dc AMD/MCP67MV/MCP67D BLOCK DIAGRAM 1 BATTERY TYPE Sub block Diagram / BOM option 1 3S2P 64 POWER SEQENCE 2 . CPU CPU CAP 5 AMD Turion 64 F/G DDR2 533/667/800 SODIMM X2 3,4 LFB 2 LFB LFB HOST BUS DVI Dual CH. 47 CRT & TV CON 46 LFB VGA CON
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amd/mcp67mv/mcp67dmcp67mv/d33mhzfdw2501+12isl6227max8632mcp67mmcp67mvmcp67dmcp67mv- a2c5304asusnvidia mcp67mcp67c9236ricoh r5c833
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C8816
Abstract: ricoh r5c833 C2335 IT8510 nvidia nb8 vga board l3404 asus CON61 R5600 D8103
Contextual Info: 5 4 3 2 1 AC_BAT_SYS 0925 +5VO 0925 + Q8200 R8209 4.7Ohm D + 1 D1_1 G1 8 2 D1_2 S1/D2_3 7 3 G2 S1/D2_2 6 4 S2 S1/D2_1 5 G D +1.05VO S Q8201 SI4800BDY @ JP8203 1 C8211 0.1UF/50V MLCC/+/-10% R8206 0Ohm C8213 4.7UF/6.3V MLCC/+/-10% 1 2 TPC28T T8209 TPC28T T8216
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q8200r8209d8202rb717f+16r821710ohmc8213u8200r8206c8211c8816ricoh r5c833c2335it8510nvidia nb8 vga boardl3404asuscon61r5600d8103
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ISL9504
Abstract: b6886 PP3V42G3H NVIDIA G84m ISL9504BCRZ C8050 12v p66 apple k50 apple M75 MLB 820-2101 PP3V42
Contextual Info: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT
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L7803
Abstract: 74LC125 HP C6602 AR2313 p66 apple U6301 SiL1362ACLU ZH510 b9718 L7206 1.2
Contextual Info: 8 6 7 PDF CSA CONTENTS SYNC MASTER DATE PDF CSA CONTENTS TABLE_TABLEOFCONTENTS_HEAD 2 2 System Block Diagram MASTER MASTER 3 Power Block Diagram MASTER MASTER 38 39 4 Table Items MASTER 40 MASTER 5 FUNC TEST 1 OF 2 MASTER 41 MASTER 6 Power Conn / Alias MASTER
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ISL9504
Abstract: foxconn apple ar9350 C4722 l8400 C8450 C7550 D6905 foxconn m33 SOT23-5
Contextual Info: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 MS MS MS PS PS PS PS PS PS PS PS PS
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isl9504foxconn applear9350c4722+6l8400c8450c7550d6905foxconnm33 sot23-5
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SOT23-5 AE31
Abstract: c9450 ar9350 ZH510 M5621 C4722 FERR-120-OHM-1 6A4 mic DIODE D6905 C8450
Contextual Info: 8 7 6 5 1 2 3 4 5 D 6 C B 7 8 9 M42 10 M42 11 M1 12 M1 13 14 M1 15 M1 16 M1 17 M1 18 19 M1 20 21 22 23 24 25 26 27 28 29 30 M1 31 M42 33 34 PDF JD JD JD RT JD JD RT (M42) MS (M42) MS 38 41 42 43 44 45 46 (M42) A DRI 47 49 MS MS MS PS PS PS PS PS PS PS PS
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sot23-5 ae31c9450ar9350zh510+6m5621c4722ferr-120-ohm-16a4 mic dioded6905c8450
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ASUS
Abstract: fingerprint rs 306 nvidia nb8 vga board AT24C02B Q2400a Q4500 TMs 1122 NL IT8510 it8511 C5500
Contextual Info: A B C D E A8E/A8S Merom/GM965/PM965 BLOCK DIAGRAM 1 BATTERY TYPE Sub block Diagram / BOM option 1 3S2P 64 CLOCK GEN ICS9LPR363AGLF-T 29 CPU MEROM LFB 2 DVI CH. LFB LFB CPU CAP POWER SEQENCE 2 5 LFB HOST BUS Dual 47 CRT & TV 46 CON . 3,4 VGA CON Nvidia NB8x series
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c5129
Abstract: C5149 C5148 88E8001 CPUTEST29H D4203 D4004 u6202 R6130 R6503
Contextual Info: 5 4 3 2 A6M 1 REVISION: 2.0 128-BIT AMD S1g1 D Unbuffer DDR2 SO-DIMM Channel A/B x16 HyperTransport 200/400/800 MHz 638 PIN PACKAGE LVDS nVIDIA Gigabit Ethernet RTL8111B PCI-E x1 CRT C51MV C TV OUT X8 /X4 HyperTransport 200/400/800 MHz BGA 468 PCMCIA 33MHz
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usb/ac97/smb1394/sdalc880rj45/11/mdc+16pic16f54cmax8725tpc8107page19page38r3811c5129c5149c514888e8001cputest29hd4203d4004u6202r6130r6503
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L256MH113R
Abstract: L256ML113R
Contextual Info: Am29LV256M Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
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T1000A4800
Abstract: T1000A2800 C2800 T1000C1800 T1000C4800 T1000A3800 T1000A1800 T1000C3800 transistor c3800 T1000
Contextual Info: Block Form Flow Regulators T1000 Series Uni-Directional M5, 1⁄ 8" 1⁄ 2" – BSPP or NPT ● Compact size/low weight/In-line units ● High flow performance ● Suitable for panel and wall mounting ● Two gain flow control ● Adjustment can be locked
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s29gl032m10tair
Contextual Info: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics
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2901 jrc
Abstract: jrc 2901 c5905 C5301 b80 c5500 transistor c1093 c5902 transistor c3300 c1093 c5902 transistor
Contextual Info: HI-CROSS+ SGS-Thomson ST7 Compiler March 12, 1998 Table of Contents 3 Table Of Contents Copyright and Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Copyright . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
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SA293
Abstract: SA273 988000
Contextual Info: DATASHEET Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations
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L256ML
Abstract: SA4871 BD8000 sa340 transistor SA427 SA370 8A000 740-0007 Am29LV256 SA36-110
Contextual Info: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations
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ef84
Abstract: EF86 b745 diode ef98 EFD8 f64b b796 CD3000 ec71 ece5
Contextual Info: Freescale Semiconductor, Inc. Order this document by AN2153/D AN2153 Freescale Semiconductor, Inc. Semiconductor Products Sector Application Note A Serial Bootloader for Reprogramming the MC9S12DP256 FLASH Memory By Gordon Doughman Field Applications Engineer, Software Specialist
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29gl064
Abstract: TSR056 BGA-63 S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M TSOP-20 S29GL256M
Contextual Info: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology Data Sheet This product family has been retired and is not recommended for designs. For new and current designs, S29GL032A, S29GL064A, S29GL128N, and S29GL256N supersede S29GL032M,
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sa330
Abstract: E3800 spansion top marking Am29LV256M Am29LV256MH S29GL256M
Contextual Info: Am29LV256M Data Sheet For new designs, S29GL256M supercedes Am29LV256MH/L and is the factory-recommended migration path for this device. Please refer to the S29GLxxxM Family Datasheet for specifications and ordering information. July 2003 The following document specifies Spansion memory products that are now offered by both Advanced
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S29GL128P
Abstract: a8800 S29GL032 S29GL256p S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M S29GL256M
Contextual Info: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology Data Sheet This product family has been retired and is not recommended for designs. For
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