C38 TRANSISTOR Search Results

B38 SMD Transistor

Abstract: 822273-1 ZTR32 AM79C874VC AM79C874 schematic capacitor COG xr7 pe69012 smd LM393 ZTR11 Kemet C0805C104K5RAC
Contextual Info: 5 +3VR +3VR C27 0.01UF CC0805 4 +3VR C38 0.01UF CC0805 +3VR C29 0.01UF CC0805 C21 0.01UF CC0805 +3VR +3VR C20 0.1UF CC0805 +3VR C32 0.1UF CC0805 3 2 +3VR C37 0.1UF CC0805 1 +3VR EEDI/LED0# LED2#/SRDCLK C14 0.1UF CC0805 EEDI/LED0# LED2#/SRDCLK R1 1.5K CR0805

C38 diode

Abstract: Z15 marking diode z15 Diode glass C36 marking diode marking c34 c38 transistor
Contextual Info: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 MRF1570T1 MRF1570FT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these

transistor c36

Abstract: J117 surface mount TRANSISTOR zener diode c25 c38 transistor c25 mosfet MOSFET c25 /c25 mosfet
Contextual Info: MOTOROLA Order this document by MRF1570T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET The MRF1570T1 is designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband

z15 Diode glass

Abstract: Z14 j b5c15 C2233 AN721 diode zener c29 A113 J042 AN215A AN3263
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 9, 6/2008 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these

z15 Diode glass

Abstract: 107 J117 surface mount TRANSISTOR MRF1570FT1 zener diode z7 b2 C35 zener
Contextual Info: MOTOROLA Order this document by MRF1570T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these

C35 zener

Abstract: ZO 107 MA mosfet j117 diode zener c29 AN211A AN215A AN721 MRF1570FT1 MRF1570T1 J117 MOSFET
Contextual Info: MOTOROLA Order this document by MRF1570T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these

diode zener c26

Abstract: A113 AN211A AN215A AN721 MRF1570FNT1 MRF1570N MRF1570NT1 MRF1570T1 mrf1570
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 8, 9/2006 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these

Contextual Info: Document Number: MRF1570N Rev. 10, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these

J042

Contextual Info: Freescale Semiconductor Technical Data MRF1570T1 Rev. 5, 3/2005 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 MRF1570T1 MRF1570FT1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these

zener diode marking c24

Abstract: transistor c36 j063
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF1570N Rev. 7, 5/2006 RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these

C12 IC GATE

Abstract: mosfet 440 mhz AN211A AN215A AN721 MRF1570FNT1 MRF1570FT1 MRF1570NT1 MRF1570T1 Motorola 622 J112
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF1570T1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF1570T1 MRF1570FT1 MRF1570NT1 MRF1570FNT1 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs

226 35K capacitor

Abstract: capacitor 226 35K C40 Sprague 105 35K capacitor R 226 35k
Contextual Info: Freescale Semiconductor Technical Data Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1.1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with

ATC100B390JT500XT

Abstract: ATC100B200JT500XT ATC100B200 ATC100B4R7CT500X ATC100B100JT500X
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with

ATC100B

Abstract: ATC100B1R0JP500XT KME63VB471M MRF8P9300H AN1955 MRF8P9300HR6 MRF8P9300HSR6 ATC100B200JT500XT ATC100B0R8JP500XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1.1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with

c38 transistor

Abstract: capacitor MKT Philips philips MKT transistor rf vhf BR 78L05 capacitor MKT ceramic trimmer capacitor L7 diode philips catalog potentiometer 100 pf, ATC Chip Capacitor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF378 VHF push-pull power MOS transistor Product specification Supersedes data of October 1992 File under Discrete Semiconductors, SC08a 1996 Oct 17 Philips Semiconductors Product specification VHF push-pull power MOS transistor

J307 FET

Abstract: J307 transistor c35 equivalent IM335
Contextual Info: Preliminary Data Sheet July 2003 AGR19180E 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19180E is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

Contextual Info: MOTOROLA Order this document by MRF19120/D SEMICONDUCTOR TECHNICAL DATA MRF19120 MRF19120S The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications at frequencies from 1930 to

capacitor 226 35K

Abstract: R 226 35k 226 35K capacitor
Contextual Info: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110

capacitor 226 35K

Abstract: 226 35K capacitor
Contextual Info: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to

226 35K capacitor

Abstract: MRF21120 z40 mosfet 226 35K capacitor 226 35K
Contextual Info: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110

IRL 1630

Abstract: MRF19120 MRF19120S
Contextual Info: MOTOROLA Order this document by MRF19120/D SEMICONDUCTOR TECHNICAL DATA MRF19120 MRF19120S The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications at frequencies from 1930 to

A4514

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

226 35K capacitor

Contextual Info: Freescale Semiconductor Technical Data MRF21120 Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier