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    C337 40 W 22 Search Results

    C337 40 W 22 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DRV10983ZPWP
    		Texas Instruments 40W, 24V 3-phase sensorless BLDC motor driver 24-HTSSOP -40 to 125 Visit Texas Instruments
    DRV10983PWPR
    		Texas Instruments 40W, 24V 3-phase sensorless BLDC motor driver 24-HTSSOP -40 to 125 Visit Texas Instruments Buy
    DRV10983PWP
    		Texas Instruments 40W, 24V 3-phase sensorless BLDC motor driver 24-HTSSOP -40 to 125 Visit Texas Instruments Buy
    LM4766T/NOPB
    		Texas Instruments Overture Series: Dual 40W Audio Amplifier with Mute 15-TO-220 0 to 70 Visit Texas Instruments Buy
    DRV10983ZPWPR
    		Texas Instruments 40W, 24V 3-phase sensorless BLDC motor driver 24-HTSSOP -40 to 125 Visit Texas Instruments Buy

    C337 40 W 22 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    F9530

    Abstract: diode C339 IRF9530 C337 W 63 complementary of irf9530 C337 W IRF9530 complementary diode c341 IRF9532 IR 9530
    Contextual Info: HE 0 I 4A5S452 000 fl5âfl fi | Data Sheet No. PD-9.320F INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER IOR HEXFET TRANSISTORS IRFS530 IRF9531 P-Channel IRFS532 IRFS533 -100 Volt, 0.3 Ohm HEXFET T0-220AB Plastic Package Features: The HEXFET® technology is the key to International Rectifier’s


    OCR Scan     		T0-220AB C-341 43S54S2 IRF9530, IRF9531, IRF9532, IRF9533 T-39-21 C-342 F9530 diode C339 IRF9530 C337 W 63 complementary of irf9530 C337 W IRF9530 complementary diode c341 IRF9532 IR 9530 PDF

    irfz34n equivalent

    Abstract: diode c335 diode C339 C337 W DIODE c336 C337 W 61 equivalent IRFZ34n IRFIZ34N
    Contextual Info: PD - 9.1489A International IQR Rectifier IRFIZ34N HEXFET Power M O SFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated V dss = 55V RDS on = 0.04Q


    OCR Scan     		IRFIZ34N C-338 C-339 irfz34n equivalent diode c335 diode C339 C337 W DIODE c336 C337 W 61 equivalent IRFZ34n IRFIZ34N PDF

    v42254-a3346

    Abstract: V42254-A3216-B309
    Contextual Info: SBM 383 with soldering terminal Type B_ Soldering pins fo r printed circuits Soldering pins, straight Special features - Extremely wide range of applications for job lots in laboratories and for use in mass-produced equipment. Few tools required for wiring and assembly.


    OCR Scan     		15-contact 25-contact 37-contact V23529-A1221-B 25-contact, v42254-a3346 V42254-A3216-B309 PDF

    c337 transistor

    Abstract: c338 transistor transistor c337 C337 w 79 C336 SMD C339 transistor c338 c336 transistors g10 smd transistor Transistor c340
    Contextual Info: PD - 9.1131A IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to


    Original     		IRGBC20M-S 10kHz) SMD-220 C-340 c337 transistor c338 transistor transistor c337 C337 w 79 C336 SMD C339 transistor c338 c336 transistors g10 smd transistor Transistor c340 PDF

    c337 transistor

    Abstract: C338 c338 transistor
    Contextual Info: PH1825AL N-channel TrenchMOS logic level FET Rev. 01 — 22 April 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PH1825AL PH1825AL c337 transistor C338 c338 transistor PDF

    c337 transistor

    Abstract: C337 w 79 transistor c337 C336 SMD c338 transistor c336 transistors C337 W 80 transistor C337 W transistor SMD LOA transistor c338
    Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1131A IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to


    Original     		IRGBC20M-S 10kHz) SMD-220 C-340 c337 transistor C337 w 79 transistor c337 C336 SMD c338 transistor c336 transistors C337 W 80 transistor C337 W transistor SMD LOA transistor c338 PDF

    burndy Y39

    Abstract: YAV4C-TC14-FXB
    Contextual Info: f_ I SE208075 I_ I ACCOMMODATES 5_ I_ 5_ I_ “* DIMENSIONS STUD SIZE CATALOG NUMBER 1/2 YA30-TC12-FXB 2.76 1.20 ±.04 .56 4.04 .62 2.70 £55J £30] m [14] [103] [16] [69J — 263 KcmiL C650/24 — - 7/2 250 FLEX CLASS I,K,M


    OCR Scan     		SE208075 SE206075-01 5E208075 burndy Y39 YAV4C-TC14-FXB PDF

    SCD1U50V3KX-GP

    Abstract: SC10U25V6KX-1GP G547F2 SC1U50V5ZY-1-GP SRN33J-7-GP SC10U6D3V3MX-GP SIS412DN-T1-GE3-GP 200KR2F-L-GP SC1U25V3KX-1-GP 10KR2F-2-GP
    Contextual Info: 5 4 3 2 1 D D SW 1 10 1 EJECT_BTN 3 5 2 4 SW -TACT-119-GP 62.40009.671 62.40012.101 C C B B A A mini BD Wistron Corporation 21F, 88, Sec.1, Hsin Tai W u Rd., Hsichih, Taipei Hsien 221, Taiwan, R.O.C. Title ODD EJT BTN Size Document Number Rev -2 JM41_MINI_BD


    Original     		-TACT-119-GP SKT-USB-295-GP G547F2P81U-GP SC4D7U16V5ZY-GP SCD1U50V3KX-GP 00PAD STFT236BR48H172-GP SCD1U50V3KX-GP SC10U25V6KX-1GP G547F2 SC1U50V5ZY-1-GP SRN33J-7-GP SC10U6D3V3MX-GP SIS412DN-T1-GE3-GP 200KR2F-L-GP SC1U25V3KX-1-GP 10KR2F-2-GP PDF

    C 337-25

    Abstract: C 33725 c337 pnp transistor C 337-40 c 33740 transistor NPN c337 BC337 sot54 c337 transistor transistor c337 C337 W 63
    Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 10 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN general purpose transistor BC337 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 45 V).


    OCR Scan     		BC337 BC327. 115002/00/03/pp8 C 337-25 C 33725 c337 pnp transistor C 337-40 c 33740 transistor NPN c337 BC337 sot54 c337 transistor transistor c337 C337 W 63 PDF

    DIODE SMD c336

    Abstract: xcf025 xcf02sv020 b30 c300 DIODE cd c326 MOLEX 87832-1420 SMD fuse P200 xcf02sv020c smdc110f XCF025V
    Contextual Info: High Speed Deserialization Board HSDB HSC-ADC-FPGA FUNCTIONAL BLOCK DIAGRAM MULTI-CHANNEL ADC EVALUATION BOARD POWER SUPPLY SERIAL LVDS PER ADC FILTERED ANALOG INPUT CLOCK CIRCUIT HSC-ADC-FPGA HSC-ADC-EVALA/B-DC +3V XILINX FPGA XC2V250 FIFO1 32k SPI CLOCK INPUT


    Original     		XC2V250 120-PIN XC2V250-5FG256C AD9287, AD9219, AD9228, AD9229, AD9259 EB05053-0-11/05 DIODE SMD c336 xcf025 xcf02sv020 b30 c300 DIODE cd c326 MOLEX 87832-1420 SMD fuse P200 xcf02sv020c smdc110f XCF025V PDF

    EL 817 c337

    Abstract: transistor c337 c337 transistor C337 W 61 DS4005
    Contextual Info: DISCRETE SEMICONDUCTORS SHEET BUK107-50DS PowerMOS transistor Logic level TOPFET March 1997 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC13a Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification


    OCR Scan     		BUK107-50DS SC13a BUK107-50 SCA54 137087/1200/02/pp12 EL 817 c337 transistor c337 c337 transistor C337 W 61 DS4005 PDF

    PH1225A

    Abstract: PH1225AL
    Contextual Info: PH1225AL N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Rev. 01 — 14 October 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is for computing use only


    Original     		PH1225AL PH1225AL PH1225A PDF

    XCF02SV020C

    Abstract: Xilinx xcf02sv020c manual SMHU diode c329 JP105 xcf02sv020 C337 W 63 c338 pin details SMHU transistor c331
    Contextual Info: High Speed Deserialization Board HSDB HSC-ADC-FPGA FEATURES FUNCTIONAL BLOCK DIAGRAM STANDARD USB 2.0 SERIAL LVDS HIGH SPEED ADC EVALUATION BOARD PS HSC-ADC-FPGA PS REG n FILTERED ANALOG INPUT Any high speed ADC evaluation board that supports serial LVDS digital output format


    Original     		XC2V250 133MHz 120-PIN 05053-0RL XC2V250-5FG256C XCF02SV020C CBSB-14-01A-RT SNT-100-BK-G-H HSC-ADC-FPGA-9289 XCF02SV020C Xilinx xcf02sv020c manual SMHU diode c329 JP105 xcf02sv020 C337 W 63 c338 pin details SMHU transistor c331 PDF

    PSMN4R0-30YL

    Contextual Info: PSMN4R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PSMN4R0-30YL PSMN4R0-30YL PDF

    PSMN9R0-30YL

    Abstract: c337 transistor
    Contextual Info: PSMN9R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PSMN9R0-30YL PSMN9R0-30YL c337 transistor PDF

    PSMN7R0-30YL

    Abstract: 10S100
    Contextual Info: PSMN7R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PSMN7R0-30YL PSMN7R0-30YL 10S100 PDF

    PSMN1R5-25YL

    Contextual Info: PSMN1R5-25YL N-channel TrenchMOS logic level FET Rev. 01 — 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PSMN1R5-25YL PSMN1R5-25YL PDF

    PSMN1R2

    Abstract: PSMN1R2-25YL
    Contextual Info: PSMN1R2-25YL N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Rev. 01 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic


    Original     		PSMN1R2-25YL PSMN1R2-25YL PSMN1R2 PDF

    PSMN7R0-30YL

    Abstract: C337 40 w 22
    Contextual Info: PSMN7R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 4 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PSMN7R0-30YL PSMN7R0-30YL C337 40 w 22 PDF

    PSMN9R0-30YL

    Contextual Info: PSMN9R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 5 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PSMN9R0-30YL PSMN9R0-30YL PDF

    PSMN4R0-30YL

    Contextual Info: PSMN4R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 31 December 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PSMN4R0-30YL PSMN4R0-30YL PDF

    PSMN6R0-30YL

    Contextual Info: PSMN6R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 4 Januari 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PSMN6R0-30YL PSMN6R0-30YL PDF

    PH9030AL

    Abstract: PH9030AL SOT669 PH9030A
    Contextual Info: PH9030AL N-channel TrenchMOS logic level FET Rev. 07 — 14 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PH9030AL PH9030AL PH9030AL SOT669 PH9030A PDF

    PSMN7R0-30YL

    Abstract: PSMN7R0-30
    Contextual Info: LF PA K PSMN7R0-30YL N-channel 30 V 7 mΩ logic level MOSFET in LFPAK Rev. 04 — 9 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PSMN7R0-30YL PSMN7R0-30YL PSMN7R0-30 PDF