C2Q 3 Search Results

Contextual Info: bel Type C2Q Surface Mount Very Fast-Acting Chip Fuse C2Q OCÍ2013D HF 0603 Size RoHS 6 Compliant C2Q Series Fuse - Fast Acting - Small size,0603 SMD - Current rating from 250mA to 5A - Wide operating temperature range from -55°C to 125°C - Tape and Reel for automatic SMD placement

SMD fuse 4A

Abstract: CHIP FUSE FUSE 250mA PB 0603 bel 1a fuse SMD FUSE BEL 4A
Contextual Info: 0603 Size RoHS 6 Compliant Type C2Q Surface Mount Very Fast-Acting Chip Fuse C2Q May2012D Pb C2Q Series Fuse Features - Fast Acting - Small size,0603 SMD - Current rating from 250mA to 5A - Wide operating temperature range from -55oC to 125oC - Tape and Reel for automatic SMD placement

Contextual Info: Type C2Q Surface Mount Very Fast-Acting Chip Fuse C2QD0600 Electrical Characteristics Testing current 0603 size UL/CSA STD. 248-14 Blow Time Minimum Maximum 100% 4 hrs N/A 200% N/A 5 sec 300% N/A 0.2 sec Ampere Rating C2Q 250 250mA 0.57 0.212 0.002 0.0002

Contextual Info: 0603 size Type C2Q Surface Mount Very Fast-Acting Chip Fuse C2QD0104 Electrical Characteristics Testing current Minimum Maximum 100% 4 hrs N/A 200% N/A 5 sec 300% N/A 0.2 sec Volt max. (A2 Sec) Typical Cold Resistance (ohm) C2Q 250 250mA 0.70 0.277 0.0002

MIL-STD-202G

Abstract: MIL-STD-202G method 103 C2Q3 208H 213B
Contextual Info: bel 0603 size R o H S 6 Com pliant Type C 2 Q Surface M o u n t Very Fast-Acting Chip Fuse C2Q D0808 Catalog Number W Ampere Rating Volt-drop Melting l2T Melting P i @ 1 0 0 % In <10 mSec @ 10 la A2 Sec (A2 Sec) Maximum Power Dissipation (W) C2Q 250 250mA

Contextual Info: 0603 size RoHS Compliant Type C2Q Surface Mount Very Fast-Acting Chip Fuse O02 Catalog Number Electrical Characteristics Testing current (UL STD. 248-14) Blow Time Minimum Maximum Ampere Rating Typical Cold Resistance (ohm) Volt-drop @100% In Melting I2T

F1206FA

Abstract: FHC32 n 431 transistor FHC10 Kamaya FUSE 1206FA F0603C transistor 431 a Kamaya FCC16 Littelfuse
Contextual Info: AEM Chip Fuse Cross-Reference Sheet AEM F1206FA Series F0603FA Series F0402FA Series AVX F1206B Series F0603C Series F0402E Series 3216FF, 1206FA Series 1608FF, 0603FA Series 0402FA Series Littelfuse 433, 429 Series 434, 431 Series 435 Series KOA CCP2B Series

Contextual Info: CMPT5086 CMPT5087 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5086 and CMPT5087 are PNP silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications

C2P TRANSISTOR

Abstract: marking codes C2p C2Q TRANSISTOR transistor marking c2p marking codes transistors sot-23 26 transistor C2p marking C2P CMPT5086 CMPT5087 Marking codes
Contextual Info: Central CMPT5086 CMPT5087 TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5086, CMPT5087 types are PNP silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high gain and

C2P TRANSISTOR

Abstract: marking codes C2p transistor C2p CMPT5086 CMPT5087
Contextual Info: CMPT5086 CMPT5087 SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5086 and CMPT5087 are PNP silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications

0601R

Abstract: BEL 0692
Contextual Info: Declaration of EU RoHS Compliance We, Bel Fuse Ltd., hereby declare that our products indicated below are in full compliance with EU Directive 2002/95/EC, with respect to the following substances: 1 2) 3) 4) 5) 6) Lead Pb), Mercury (Hg), Cadmium (Cd), Hexavalent chromium (Cr (VI),

STR3035

Abstract: STR-3035 GLS-S1 ci470
Contextual Info: 88 06/23 18:38 SANKEN JAPAN 0 3 986 8637 K \f ¿ y . j . ;'\j ! .} ,A x ! C i ^. -tir $>t n-ä SF "* j » * -} No, -ü c oEi 'U r ; / a V / 1 *<T ft i 9 # 1984- i1 S # : T r • IC S « S S - 9 - 14 3 ‘TlR 3 0 3 b 'F'S f.7iij i£ £ ''•'*i 7' 'i * K'SI t a i !•"'^ ■■■ ’

CMPT5086

Abstract: CMPT5087
Contextual Info: Central CMPT5086 CMPT5087 TM Semiconductor Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5086, CMPT5087 types are PNP silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications

Contextual Info: Central" CMPT5086 CMPT5087 Semiconductor Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5086, CMPT5087 types are PNP silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring

Contextual Info: Central CMPT5086 CMPT5087 Sem i c o n d u c t o r C o r p . PNP SILICON TRANSISTOR DESCRIPTION: The C ENTRAL S E M IC O N D U C TO R CMPT5086, CMPT5087 types are PNP silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface

smd fuse p

Abstract: SMD-1005 FUSE 250mA SSQCD1005 SMD fuse 4A SSQ 5A THERMAL Fuse 5a
Contextual Info: SSQCD1005 ESSQD1005A1 Replaceable SSQ/SST with Integral Clips These fuse/clip assemblies can efficiently placed in a single pass. Once reflowed, fuse replacement requires no resoldering. SSQ Square Ceramic Surface Mount Quick Action Fuse SST Square Ceramic Surface Mount

SMD MARKING CODE C2U

Abstract: smd code marking C2G
Contextual Info: SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW TYPE NO. NEW ! NEW ! DESCRIPTION BVC*0 (VOLTS) BVcto (VOUS) w ao (VOLTS) 1 * 0 « S Ve. (VOUS) MM MM MM MAX 10 15 n FE m MM MAX 20 _ « «»V« (VOUS) le m Va< S *n < H (mA) (VOUS) MAX

BC5468

Abstract: SMD MARKING CODE C1L 8C550 SMD MARKING 5c npn BC5486 bc327 smd BC547 smd C3z SMD MARKING CODE C1G BC840
Contextual Info: SMD TransiStOfS SOT-23 Case U.S. Specification Preferred Series 350mW NEW! NEW! BVa o BVgo (VOITS) (VOLTS) (VOLTS) IcM * V c , (VOLTS) <nA) MM MM MM MAX MM MAX 30 1!i 3.0 10 15 20 75 40 6.0 10 60 100 15 4.5 400 20 40 60 6.0 10 45 250 50 100 60 30 TYPE MO.

SD306

Abstract: Triac soft turn on SD306-D 455k d 1667 fan triac triac arc control SD306-A SD306-B SD306-C
Contextual Info: Super Device SD306 SD306 Fan Controller F eatu res . Use 455 KHz crystal time base. . Three wind modes : Constant wind, Rhythmical wind, Sleep wind. . Three wind grades : Soft wind, Medium wind, Strong wind. Six types of timing function selection by bonding

TA31084

Abstract: TA31084FN
Contextual Info: REGULATOR AND PERIPHERAL TENTATIVE DATA SYSTEM POWER SUPPLY 1C FOR CELLULAR PHONE 3 in d e p e n d e n t r e g u la t o r s o n a chip, v e ry su ita b le f o r cellular, p o rta b le , m o b ile a n d d ig it a l t e le p h o n e s. FEATURES • 3 re g u la t o rs , in d e p e n d e n t o n e a n o t h e r

ZC830

Abstract: ZC2800 ZC2811 ZC5800 ZC820 ZC821 ZC822 ZC823 ZC824 ZC825
Contextual Info: E-LINE DIODE SPECIFICATIONS SCHOTTKY BARRIER DIODES These devices have a high breakdown voltage and ultra fast sw itching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications

PC8130TA

Abstract: Mini 50 Pin IDE
Contextual Info: PRELIMINARY DATA SHEET_ IV IF f " / BIPOLAR ANALOG INTEGRATED CIRCUIT / /¿PC 8 1 3 0 T A , /iP C 8 1 3 1 T A -1 5 dBm INPUT, VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE DESCRIPTION The ¿¿PC8130TA and ¿¿PC8131TA are silicon monolithic integrated circuits designed as variable gain amplifier.

AN-772

Abstract: AD9779 ADF4110 ADF4111 ADF4112 ADF4113 ADF4116 ADF4117 ADL5370 gilbertcell
Contextual Info: 300 MHz to 1000 MHz Quadrature Modulator ADL5370 FEATURES Output frequency range: 300 MHz to 1000 MHz Modulation bandwidth: >500 MHz 3 dB 1 dB output compression: 11 dBm @ 450 MHz Noise floor: −160 dBm/Hz Sideband suppression: −41 dBc @ 450 MHz Carrier feedthrough: −50 dBm @ 450 MHz

AFG3252

Abstract: 64 QAM modulator demodulator AD8348 2450BL15B050 AD9709 adf4360-7 AD9779 bench 2800 100MHz sine wave generator adl5385 application note
Contextual Info: 2300 MHz to 3000 MHz Quadrature Modulator ADL5373 FEATURES Output frequency range: 2300 MHz to 3000 MHz Modulation bandwidth: >500 MHz 3 dB 1 dB output compression: +14.0 dBm @ 2500 MHz Noise floor: −157 dBm/Hz @ 2500 MHz Sideband suppression: −39 dBc @ 2500 MHz