C28V Search Results

Contextual Info: 1SV242 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 2 4 2 Unit in mm TV VHF W ID E BAND TUNING + 0.5 2.5 - 0.3 High Capacitance Ratio : CIV/ C28V = 14.5 Typ. Low Series Resistance : rs = 0.65fî (Typ.) Excellent C - V Characteristics, and Small Tracking Error.

Contextual Info: BB679. Silicon Variable Capacitance Diode
Designed for tuning wideband CATV-Tuners
High capacitance ratio C1V/C28V typ. 18.3
Low series resistance
Excellent uniformity and matching due to "in-line" matching assembly procedure 1 BB679-02V 2 Type

1SV242

Contextual Info: 1SV242 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 24 2 Unit in mm TV VHF WIDE BAND TUNING + 0.5 2.5 - 0.3 High Capacitance Ratio : CIV/C28V = 14.5 Typ. Low Series Resistance : rs = 0.650 (Typ.) Excellent C - V Characteristics, and Small Tracking Error.

1SV242

Contextual Info: 1SV242 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 24 2 Unit in mm TV VHF WIDE BAND TUNING + 0.5 2.5 - 0.3 High Capacitance Ratio : CIV/C28V = 14.5 Typ. Low Series Resistance : rs = 0.650 (Typ.) Excellent C - V Characteristics, and Small Tracking Error.

Contextual Info: TOSHIBA 1SV242 TOSHIBA VARIABLE CAPACITANCE DIODE 1 m W tÊ F SILICON EPITAXIAL PLANAR TYPE Ù.1 W U nit in mm TV VHF WIDE BAND TUNING + CL5 2 .5 - 0.3 + 0.25 1 .5 - a 15 High Capacitance Ratio : C 1V / C28V = 14.5 Typ. • Low Series Resistance : rç = 0.65H (Typ.)

C28V

Contextual Info: SILICON EPITAXIAL PLANAR TYPE 1SV242 U nit in mm TV VHF WIDE BAND TUNING • • • • High Capacitance Ratio : CIV /C28V = 14.5 Typ. Low Series Resistance : rs = 0.650 (Typ.) Excellent C - V Characteristics, and Small Tracking Error. Small Package El

BB679

Abstract: BB679-02V SC79
Contextual Info: BB679. Silicon Variable Capacitance Diode
Designed for tuning wideband CATV-Tuners
High capacitance ratio C1V/C28V typ. 18.3
Low series resistance
Excellent uniformity and matching due to "in-line" matching assembly procedure 1 BB679-02V 2 Type

1sv 134

Abstract: SH marking diode
Contextual Info: 1SV242 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 242 Unit in mm TV VHF W ID E BAND TUNING High Capacitance Ratio : CIV/C28V = 14.5 Typ. Low Series Resistance : rs = 0.650 (Typ.) Excellent C - V Characteristics, and Small Tracking Error.

1SV242

Contextual Info: 1SV242 TOSHIBA 1 SV2 4 2 TOSHIBA VARIABLE CAPACITANCE DIODE TV VHF WIDE BAND TUNING SILICON EPITAXIAL PLANAR TYPE Unit in mm + 0.5 2.5 - 0.3 High Capacitance Ratio : CIV/C28V = 14.5 Typ. Low Series Resistance : rs = 0.650 (Typ.) Excellent C - V Characteristics, and Small Tracking Error.

VES05991

Abstract: BB679-02V SC79
Contextual Info: BB679-02V Silicon Variable Capacitance Diode Preliminary data 2
Design for tuning wideband CATV-Tuners
High capacitance ratio C1V /C28V
Low series inductance 1
Low series resistance VES05991
Extremely small and flat package
Excellent uniformity and matching due to

C 34 F

Abstract: 1SV274 D234
Contextual Info: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV274 C A T V T U N IN G . • • • • High Capacitance Ratio : C2V / C25V = 12.5 Typ. Low Series Resistance : rs = 0.6f2 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Small Package

Contextual Info: TOSHIBA 1SV282 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 282 Unit in mm CATV TUNING • • • • High Capacitance Ratio : C2 v / C 2 5 V = 12.5 TYP. Low Series Resistance : rs = 0.6H (TYP.) Excellent C-V Characteristics, and Small Tracking Error.

1SV283B

Abstract: C25V
Contextual Info: 1SV283B 東芝可変容量ダイオード シリコンエピタキシャルプレーナ形 1SV283B ○ CATV チューナ電子同調用 単位: mm • 容量変化比が大きい。 : C2V/C25V = 11.5 標準 • 直列抵抗が小さい。 : rs = 0.55 Ω (標準)

Contextual Info: T O SH IB A 1SV283 TOSHIBA VARIABLE CAPACITANCE DIODE CATV TUNING • • • • SILICON EPITAXIAL PLANAR TYPE 1 SV2 8 3 Unit in mm High Capacitance Ratio : C2 v / C 2 5 V = H -5 TYP. Low Series Resistance : rs = 0.55H (TYP.) Excellent C-V Characteristics, and Small Tracking Error.

C25V

Abstract: KDV262 TA5 marking
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV262 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATV TUNING. L K H F Excellent C-V Characteristics, and Small Tracking Error. A Low Series Resistance : rS=0.6 Typ. 1 E High Capacitance Ratio : C2V/C25V=12.5(Typ.)

1SV283

Abstract: C25V
Contextual Info: TOSHIBA 1SV283 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 2 8 3 Unit in mm CATV TUNING • High Capacitance Ratio : C2V/C25V = 11.5 TYP. • Low Series Resistance : rs = 0.550 (TYP.) • Excellent C-V Characteristics, and Small Tracking Error.

C25V

Abstract: KDV269E
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV269E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATV TUNING. FEATURES ᴌExcellent C-V Characteristics, and Small Tracking Error. ᴌUseful for Small Size Tuner. 1 A ᴌLow Series Resistance : rS=0.55ή Typ.

Contextual Info: SEMICONDUCTOR KDV262 TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATV TUNING. K L H F Excellent C-V Characteristics, and Small Tracking Error. A Low Series Resistance : rS=0.6 Typ. 1 E High Capacitance Ratio : C2V/C25V=12.5(Typ.)

28VR

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. SSP-D29B9SW C-28VR 01 0,00 [ 0 0 , 3 9 4 ] V f =23 V ELECTRO-OPTICAL CHARACTERISTICS Ta =25'C PARAMETER PEAK WAVELENGTH SYMBOL FORWARD VOLTAGE Vf REVERSE VOLTAGE Vr MIN MAX UNITS rim V V mcd - AXIAL INTENSITY* 28 5.0

Contextual Info: UNCONTROLLED DOCUMENT SC.0.25 PART NUMBER REV. SSP-D19F9SW C-28V 06 .1 0 [0 0 .2 4 -0 ] PRELIMINARY IN P / N DIR 05,00 [ 00 ,197 ] ELECTRO-OPTICA! CHARACTERISTICS Ta = 2 5 X PARAMETER MIN V f= 6 V MAX TYP - PEAK WAVELENGTH FORWARD VOLTAGE 30 5,0 Vf AXIAL INTENSITY

Contextual Info: PART NUMBER REV. SSP-D29B9SW C-28V A E.C.N. NUMBER AND REVISION COMMENTS E.C.N, #11176. DATE 10.1 B.04 UNCONTROLLED DOCUMENT REV, A 010,00 [00,394] V f = 23 V ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 X PARAMETER SYMBOL MIN PEAK WAVELENGTH FORWARD VOLTAGE Vf

schematic diagram atx Power supply 500w

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Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

Contextual Info: TOSHIBA 1SV282 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 j CATV TUNING U nit in mm • High Capacitance Ratio : C 2V /C 25V —12.5 TYP. • Low Series Resistance • Excellent C-V Characteristics, and Small Tracking Error. • Useful for Small Size Tuner,

Contextual Info: TOSHIBA 1SV262 1 S V2 6 2 TOSHIBA VARIABLE CAPACITANCE DIODE CATV TUNING. • • • • SILICON EPITAXIAL PLANAR TYPE U n it in mm High Capacitance Ratio : C2V/C25V = 12.5 Typ. Low Series Resistance : rs = 0.6ft (Typ.) Excellent C-V Characteristics, and Small Tracking Error.