C25 DIODE Search Results

smd diode 819

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S CES C25 v CE sat t Symbol Test Conditions V * CES Tj = 25°C to 150°C 600 V vt cgr Tj = 25°C to 150°C; RGE = 1 M n 600 V Maximum Ratings v GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25“C

IXGH32N60AU1

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S vCES ^C25 v CE sat Combi Pack t Symbol Test C onditions V yces Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RQE= 1 MQ 600 V VGES Continuous ±20 V V GEM Transient ±30 V ^C25 Tc = 25°C ^C90

Contextual Info: HiPerFAST IGBT with Diode IXGH30N60BD1 CES ^C25 v CE sat Combi Pack ^fi(typ) Symbol Test Conditions VCES Tj = 25°C to 150PC 600 V v CGR Tj = 25°C to 15CFC; RGE = 1 MQ 600 V v Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 60 A ^C90 Tc = 90° C

Contextual Info: nixYS HiPerFAST IGBT with Diode IXGH 32N50BU1 V CES ^C25 V CE sat t rfi Symbol Test Conditions VCES VCGR T, =25°Cto150°C 500 V Tj = 25eC to 150° C; RGE= 1 MQ 500 V VGES VGEM Continuous 120 V Transient ¿30 V ^C25 Tc = 25° C ^C90 Tc =90° C ^CM Tc = 25° C, 1 ms

Contextual Info: □IXYS MUBW 30-12 A6 Converter - Brake - Inverter Module CBI1 Rectifier Brake Inverter V RRM = 1600V *FAVM - 25 A U = 370 A VCES = 1200 V V CES = 1200 V 'C25 =18 A VCE(Sat,= 2.6 V 'C25 = 31 A V CE,Sat,= 2.2 V Features Input Rectifier Bridge D8 - D13 Symbol

Contextual Info: □IXYS MUBW 35-06 A6 Converter - Brake - Inverter Module CBI1 Rectifier Brake Inverter VRRM = 1200V *FAVM - 25 A lC QM = 370 A FSM VCES = 600 V 'C25 = 23 A Vnc, H= 2.1 V CE(sat) VCES = 600 V 'C25 = 38 A Vnc, H= 2.1 V CE(sat) Features Input Rectifier Bridge D8 - D13

Contextual Info: □IXYS MUBW 6-06 A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 24 25 D 2Ï Preliminary data Rectifier Brake Inverter V RRM = 1200V L.,. = 11 A FAVM U = 250 A VCES = 600 V VCES = 600 V 'C25 =7A VCE(Sat,= 2.0 V 'C25 =7A VCE,Sat,= 2.0 V

IXSN35N120

Contextual Info: DIXYS High Voltage GBT with Diode IXSN 35N120AU1 VCES C25 V Symbol Test Conditions V CES T, = 25°C to 150°C 1200 V V CGR Tj = 25°C to 150°C; RGE = 1 M fl 1200 A V GES Continuous +20 V V ¥ gem Transient ±30 V ^C25 Tc = 25°C 70 A 'c a o T c = 90°C Maximum Ratings

IC2560

Abstract: thyristor module 700a NTC-10 ohm MIXA60WH1200TEH
Contextual Info: MIXA60WH1200TEH preliminary 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V I DAV = I TSM = 135 A I C25 = 700A VCE sat = = 85 A 1.8 V VCE(sat) = 60 A I C25 1.8 V 6-Pack + 3~ Rectifier Bridge, half-controlled (high-side) & Brake Unit + NTC

Contextual Info: MIXA50WB600TED tentative 3~ Rectifier XPT IGBT Module Brake Chopper 3~ Inverter VRRM = 1200 V VCES = 600 V VCES = 650 V I DAV = 119 A I C25 I FSM = 360 A VCE sat = = 29 A I C25 = 64 A 2 V VCE(sat) = 1.6 V 6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC Part number

D65VML

Abstract: D65CEK1C5A C25DRJ350 S811V XTMC6A01 0A95 diode C25DND325 XTMF9A00
Contextual Info: Motor Control and Protection Contactors 2.1 Contactors Product Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Compact Definite Purpose Contactors . . . . . . . . . . . . . . . . . . . . . . . . 50 mm C25 Definite Purpose Contactors . . . . . . . . . . . . . . . . . . . . . .

40N30BD1

Contextual Info: DIXYS HiPerFAST IGBT IXGH40N30BD1 IXGH40N30BD1S CES ^C25 V CE sat t 300 V 60 A 2.4 V 75 ns Preliminary data Symbol Test Conditions v CES ^ = 25°C to 150°C VCGR TJ = VGES 300 V 300 V Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25° C 60 A 'c s o

Contextual Info: □IXYS MUBW 4-12 A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 25 24 D 2Ï Preliminary data Rectifier Brake VRRM = 1600V L.,. = 11 A FAVM U = 250 A VCES Inverter = 1200 V ^C25 = 3.6 A VC E (sat) = 2.8 V VCES = 1200 V 'C25 = 3 - 6 A

Contextual Info: □IXYS MUBW 10-12A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 24 25 D 2Ï Preliminary data Rectifier Brake Inverter V RRM = 1600V L.,. FAVM = 11 A U = 250 A VCES = 1200 V V CES = 1200 V 'C25 =3-6 A VCE(Sat,= 2 - 8 V 'C25 = 13 A

Contextual Info: □IXYS MUBW 20-06 A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 24 25 D 2Ï Preliminary data Ì VCES = 600 V 'C25 = 23 A Vnc, H= 2.1 V CE(sat) > VCES = 600 V 'C25 = 1 1 A II VRRM = 1200V L.,. = 11 A FAVM lC Q M = 250 A FSM u t(s a t)

Contextual Info: □IXYS MUBW 15-06 A6 Converter - Brake - Inverter Module CBI1 »4 5 13 D 10 22 12 D 23 0 8 24 25 D 2Ï Preliminary data VCES = 600 V Ì 'C25 = 18 A Vnc, H= 2.1 V CE(sat) > VCES = 600 V 'C25 = 1 1 A II VRRM = 1200V L.,. = 11 A FAVM lC Q M = 250 A FSM u t(s a t)

1SV282

Contextual Info: 1SV282 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV282 CATV Tuning Unit: mm • High capacitance ratio: C2 V/C25 V = 12.5 typ. • Low series resistance: rs = 0.6 Ω (typ.) • Excellent C-V characteristics, and small tracking error.

1SV214

Contextual Info: 1SV214 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV214 TV Tuning Unit: mm • High capacitance ratio: C2 V/C25 V = 6.5 typ. • Low series resistance: rs = 0.4 Ω (typ.) • Excellent C-V characteristics, and small tracking error.

1SV283B

Contextual Info: 1SV283B TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV283B Unit: mm CATV Tuning • High capacitance ratio: C2 V/C25 V = 11.5 typ. • Low series resistance: rs = 0.55 Ω (typ.) • Excellent C-V characteristics and small tracking error

1SV269

Contextual Info: 1SV269 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV269 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 11.5 typ. • Low series resistance: rs = 0.55 Ω (typ.) • Excellent C-V characteristics, and small tracking error.

1SV262

Contextual Info: 1SV262 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV262 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 12.5 typ. • Low series resistance: rs = 0.6 Ω (typ.) • Excellent C-V characteristics, and small tracking error.

Contextual Info: 1SV282 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV282 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 12.5 typ. · Low series resistance: rs = 0.6 Ω (typ.) · Excellent C-V characteristics, and small tracking error.

Contextual Info: 1SV283 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV283 CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 11.5 typ. · Low series resistance: rs = 0.55 Ω (typ.) · Excellent C-V characteristics, and small tracking error.

1SV290B

Contextual Info: 1SV290B TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV290B CATV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 16 typ. • Low series resistance: rs = 0.92 Ω (typ.) • Excellent C-V characteristics, and small tracking error.