C208 Search Results

nema wc 27500

Abstract: RCW-C20810-12-4 C20810-12-3 nema wc 55 RCW-C20810-12-3 RCW-C20810-18-3 c2081 C20810-12 wc 27500 RCW5986
Contextual Info: SPECIFICATION CONTROL DRAWING Title RCW-C20810 Date Revision CABLE, ELECTRICAL, NORMAL WEIGHT, UNSHIELDED, 3-25-06 A NOMEX BRAIDED, 200°C, 600 VOLTS This product meets all requirements of Lockheed Specification C20810, and applicable requirements of NEMA WC 27500.

BTN5551N3

Abstract: BTP5401N3 sot-23 MARKING CODE G1
Contextual Info: CYStech Electronics Corp. Spec. No. : C208N3-H Issued Date : 2003.06.06 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTN5551N3 Description The BTN5551N3 is designed for general purpose applications requiring high breakdown voltage.

MPY008H

Abstract: MPY008 MPY08 28KUN5C MPY08H 28KUN TMC28KUB5V1
Contextual Info: C208K, TMC28KU CM OS Multiplier 8 x 8 Bit, 45ns, 65ns The TM C208K and TM C28KU are high-speed 8 x 8 bit parallel multipliers which operate at a 45 or 65ns cycle time 22.2 or 15.3MHz multiplication rate . The multi­ plicand and multiplier are both two's complement

K3467

Abstract: TRW 012HJ1C MPY008H tdc1008 smd marking g8 smd Pl9 012hj TMC216H MPY012H 012HJ1C
Contextual Info: TjRSnf F ix e d -P o in t A rith m e tic Description Product TM C208K-1 Size Clock Rate 1 MHz P o w e r1 (Watts) Grades2 Package Notes Page M u ltip lier 8x8 45 50 65 70 0.55 0.55 0.55 0.55 85, N5 B5 65, N5 B5 40 40 40 40 Pin Pin Pin Pin DIP DIP DIP DIP

BTA1579S3

Abstract: BTC4102S3 e1 IC sot323
Contextual Info: Spec. No. : C208S3 Issued Date : 2003.06.11 Revised Date : Page No. : 1/4 CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTC4102S3 Description The BTC4102S3 is designed for high voltage amplification application. Features • High breakdown voltage. BVCEO=120V

Contextual Info: Raytheon Electronics S e m ico n d u cto r D iv isio n TM C2081 D igital V ideo M ixer • • • • BROADCAST VIDEO Features • Mixes 24//16-bit RGB/YC b C r 444//YC b C r 422 and 8-bit color-index sources • 24//16-bit RGB/YC b C r 444//YC b C r 422 output

n5551 transistor

Abstract: n5551 BTN5551A3 BTP5401A3
Contextual Info: CYStech Electronics Corp. Spec. No. : C208A3 Issued Date : 2003.06.06 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTN5551A3 Description The BTN5551A3 is designed for general purpose applications requiring high breakdown voltage.

C20808-26L1

Abstract: C20808-26L2 nema wc 27500 C20808-26L4 SAE AS 27500 RCW-C20808-26L3 C20808 RCW-C20808-26L4 nema wc 27500 2 WIRE SHIELDED nema wc 55
Contextual Info: SPECIFICATION CONTROL DRAWING Title RCW-C20808 Date CABLE, ELECTRICAL, LIGHTWEIGHT, SHIELDED, JACKETED, 150°C, 600 VOLTS Revision 3-25-06 A This product meets all requirements of Lockheed Specification C20808, and applicable requirements of NEMA WC 27500.

C2083

Abstract: S2083 s2083 application
Contextual Info: C2083 Application Note is replaced by S2083 Application Note

BTC3906L3

Contextual Info: CYStech Electronics Corp. Spec. No. : C208L3 Issued Date : 2004.09.21 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTC3906L3 Description The BTC3906L3 is designed for general purpose applications requiring high breakdown voltage.

C2084

Abstract: AM05-0006 AM05-0005 AM05-0005-TB AM05-0006-TB
Contextual Info: Application Note C2084 Ceramic Surface Mount Amplifier Rev. V3 1. Introduction M/A-COM’s Ceramic Surface Mount amplifier platform offers superior intermodulation performance for IF amplifiers in a commercial LGA Land Grid Array package. This design approach

silicon photodiode array

Contextual Info: PHOTONIC Silicon Photodiode Array, Near I.R. Photoconductive 8 element Type PDI-C208-F DETECTORS INC. PACKAGE DIMENSIONS INCH mm .600 [15.24] CL CL .062 [1.57] CL .100 [2.54] .014 [0.36] GAP (BETWEEN ACTIVE AREA) P.W.B 1 PHOTODIODE ARRAY CHIP (ACTIVE AREA)

photodiode array chip

Abstract: 9 ELEMENT photoDIODE ARRAY PDB-C208 silicon linear photodiode array c208 Photodiode Array linear Photodiode Array linear array photodiode element
Contextual Info: PHOTONIC DETECTORS INC. Silicon Photodiode Array, Photoconductive 8 element Type PDB-C208 PACKAGE DIMENSIONS INCH mm .600 [15.24] CL C L .062 [1.57] CL .100 [2.54] .014 [0.36] GAP (BETWEEN ACTIVE AREA) P.W.B 1 PHOTODIODE ARRAY CHIP (ACTIVE AREA) 2 3 4 5

P102-5

Abstract: C28K 28KUN
Contextual Info: TM C208K, TM C 28 KU C M OS Multiplier • T h re e -S ta te O u tp u ts 8 x 8 Bit, 45ns, 65ns • S in g le + 5 V P o w e r S u p p ly • T TL C o m p a tib le T h e T M C 2 0 8 K a n d T M C 2 8 K U a re h ig h -s p e e d 8 x 8 b it p a ra lle l m u ltip lie rs w h ic h o p e ra te a t a 4 5 o r 6 5 n s cycle

BTC3906M3

Abstract: 01673
Contextual Info: CYStech Electronics Corp. Spec. No. : C208M3 Issued Date : 2003.08.18 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTC3906M3 Description The BTC3906M3 is designed for general purpose applications requiring high breakdown voltage.

BTC3906M3

Contextual Info: CYStech Electronics Corp. Spec. No. : C208M3 Issued Date : 2003.08.18 Revised Date :2006.12.04 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTC3906M3 Description The BTC3906M3 is designed for general purpose applications requiring high breakdown voltage.

ge c20f

Abstract: GE C20C ST C318 GE C10781 GE C52U C520 silicon C10781 C10702 C40E hitachi c458
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer C15E C15F C15G C15M C15U C20A Pirgo Elecs C208 Pirgo Elecs C20C Pirgo Elecs C200 Pirgo Elecs C20F Pirgo Elecs C20U Pirgo Elecs C22A Pirgo C228 Plrgo C22C Pirgo C220 Pirgo C22F Pirgo C22U Plrgo

Midcom 7090-37

Abstract: 7090-37 PANASONIC C372 BCM5222KQM motorola c381 gt64260 RM73B1JT101J GT-64260 R189 DE0805B102K2K
Contextual Info: MVP X3 # Board Station BOM file # date : Friday March 15, 2002; 13:47:30 # Variant : No_Stuff REFERENCE C195 C196 C197 C198 C199 C200 C201 C202 C203 C204 C205 C206 C207 C208 C209 C210 C211 C212 C213 C214 C215 C216 C218 C219 C220 C221 C222 C223 C224 C225 C226

Ceramic Surface Mount Amplifiers

Abstract: SURFACE MOUNT rf TRANSFORMER AM05-0005 AM05-0005-TB AM05-0006 AM05-0006-TB C2084
Contextual Info: C2084 Application Notes Ceramic Surface Mount Amplifiers V 2.00 1. Introduction M/A-COM’s Ceramic Surface Mount amplifier platform offers superior intermodulation performance for IF amplifiers in a commercial LGA Land Grid Array package. This design approach integrates coupler

BTA1514N3

Abstract: BTC3906N3
Contextual Info: Spec. No. : C208N3 Issued Date : 2002.05.11 Revised Date : 2005.01.12 Page No. : 1/4 CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTC3906N3 Description The BTC3906N3 is designed for general purpose applications requiring high breakdown voltage.

AS22759 solderability

Abstract: C20805 c20805-26 as22759
Contextual Info: SPECIFICATION CONTROL DRAWING Title RCW-C20805 Date Revision WIRE, ELECTRICAL, LIGHTWEIGHT, POLYTETRAFLUOROETHYLENE/POLYIMIDE-INSULATED, 2-9-06 SILVER-COATED HIGH-STRENGTH COPPER ALLOY, 200°C, 600 VOLTS This product meets all requirements of Lockheed Specification C20805, and applicable requirements of SAE AS22759/81.

C20809-26L3

Abstract: nema wc 27500 C20809-26L2 RCW-C20809-26L2 RCW-C20809-26L4 C2080 C20809-26L RCW-C20806 26l3
Contextual Info: SPECIFICATION CONTROL DRAWING Title RCW-C20809 Date Revision CABLE, ELECTRICAL, LIGHTWEIGHT L AND NORMAL WEIGHT (N), 3-1-04 UNSHIELDED, UNJACKETED, 200°C, 600 VOLTS This product meets all requirements of Lockheed Specification C20809, and applicable requirements of NEMA WC 27500.

BTC3906L3

Abstract: BTA1514L3 IC DATE CODE marking G1 BT-C39
Contextual Info: CYStech Electronics Corp. Spec. No. : C208L3 Issued Date : 2004.09.21 Revised Date : 2006.12.26 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTC3906L3 Description The BTC3906L3 is designed for general purpose applications requiring high breakdown voltage.

RJP 30 h1

Contextual Info: TMS320C6713B FLOATINGĆPOINT DIGITAL SIGNAL PROCESSOR SPRS294A − OCTOBER 2005 − REVISED NOVEMBER 2005 D Highest-Performance Floating-Point Digital D D D D D D Signal Processor DSP : TMS320C6713B − Eight 32-Bit Instructions/Cycle − 32/64-Bit Data Word