Y331
Abstract: Y25I ic top 246 yn ROM XX15 HSP43881 IY27
Contextual Info: JAN i 0 !?a! £2 HARRIS H SP43881 Digital Filter J a n u a ry 1 9 9 1 F e a tu re s D e s c rip tio n • Eight Filter Cells The H S P 4 3 8 8 1 is a vid eo -sp eed Digital Filter DF designed to efficiently im plem ent vector operations such as FIR digital filters. It is com prised of eight filter cells
|
OCR Scan
|
hsp4388130mhz26-bity331+4y25iic top 246 ynrom xx15iy27
|
PDF
|
A225D
Abstract: A 225D applikation heft information applikation mikroelektronik meuselwitz VEB mikroelektronik Piezofilter DDR FM -piezofilter VEB Kombinat zf filter "halbleiterwerk frankfurt"
Contextual Info: Inform ation Applikation K * D FTDDlknroeBlBl^lanariil^. Inform ation Applikation HEFT 24 ; A 225 D FM -ZF-VERSTÄRKER FT-1 VEBHalbleTterwerfeFfanWurt TOctert U E c im VEB Kombinat Mikroelektronik KSDj KAMM ER DER TECHNIK I Ißegirksvörstandfiankfurt/O. .Autor : Di.pl .-Ing*
|
OCR Scan
|
19s4-a225da 225dapplikation heft+7information applikation mikroelektronikmeuselwitzveb mikroelektronikpiezofilter ddrfm -piezofilterveb kombinat zf filterhalbleiterwerk frankfurt
|
PDF
|
|
Contextual Info: Advance Data Sheet November 1999 , microelectronics group Lucent Technologies Bell Labs Innovations ORCA OR3LP26B Field-Programmable System Chip FPSC Embedded Master/Target PCI Interface Introduction Lucent Technologies Microelectronics Group has developed a solution for designers who need the
|
OCR Scan
|
or3lp26b32-/64-bitor3l125b352-pin+3680-pinba352bm680
|
PDF
|
bp-930
Abstract: grundig vs-c45 np-120 li-ion EPSON DX7 sanyo vm-d6p sony F570 toshiba c660 AA NiMh battery 1.2v 2000mAh np-60 casio cv-3010
Contextual Info: Digital Camera Battery Picture Index & Specifications Model # Information Model # DLC1L DLCRV3 Description: • Replaces Canon NB-1L • 3.7Volt 680mAh 420 images • NoMEM Lithium-Ion • 3 Year Warranty Dimensions: 1-15/16 x 2-1/4 x 3/8 Description: • Replaces Casio NP-20
|
Original
|
680mahnp-20650mah850mah+15dlcs401230mah600mahspp04spp03bp-930grundig vs-c45np-120 li-ionepson dx7sanyo vm-d6psony f570toshiba c660aa nimh battery 1.2v 2000mahnp-60 casiocv-3010
|
PDF
|
marking code C1E SMD Transistor
Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17
|
Original
|
p14740ee5v0pf00marking code c1e smd transistortransistor smd marking code s01fmcw radar+7transistor smd c1yne92039g2b 6-pin smdne582m03ne3210so1smd transistor g1-lsmd code marking nec 817
|
PDF
|
FET marking code g5d
Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
|
Original
|
r09cl0001ej0100px10727ej02v0pffet marking code g5dpg2179tb+8marking code c3e sot-89marking code c1e mmicmarking code c1g mmic2sc3357/ne85634pg2163t5nsot-23 g6gpc8230tumarking code c1h mmic
|
PDF
|
nec mosfet marked v75
Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
|
Original
|
g0706px10727ej02v0pfnec mosfet marked v75nec ga fet marking code t79+8fet marking code g5dmarking code c1g mmiclga 1155 pin diagrampb1507marking code c1e mmicmarking code c1h mmicpc8230tummic sot 363 marking code 77
|
PDF
|
2SK2396A
Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
Contextual Info: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The
|
Original
|
p10100ej6v0sg002sk2396anec 2sk2396ak2396a+6pc16582sc2407uaa 1006k2396k2597marking code saw mos transistor
|
PDF
|
UAA 1006
Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Contextual Info: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH
|
Original
|
d-40472i-20124i-00139d-30177+15gb-mk14d-81925s-18322f-78142e-28007uaa 1006manual* cygnus sl 5000transistor marking t79 ghzpc1658gnec ga fet marking code t79gaas fet t79pc1658mc-77122sc5431nec u71
|
PDF
|
transistor SMD s72
Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
Contextual Info: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той
|
Original
|
ot323bc818wmun5131t1bc846a+12smbt3904mvn5131t1transistor smd s72nec mys 501mys 99transistor 8bb smdst mys 99 102kvp 81akvp 81a diodekvp 69akvp 86asmd transistor a7p
|
PDF
|
Pnp transistor smd ba rn
Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Contextual Info: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj
|
OCR Scan
|
q9001-1994icmsh1-20mlpnp transistor smd ba rntransistor marking code 12w sot-23+8smd transistor marking p69transistor smd marking code s2atransistor smd bc rntransistor smd marking code bc ru1ff transistor smd marking codesmd transistor p2dmotorola transistor smd marking codessmd transistor marking p28
|
PDF
|
APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
|
OCR Scan
|
edition-1978ausgabe-1978bs3934so-26+12ot-114ns371apy12byy32ac176aey26bav77bby20bd545bbav27transistor kt 209 maf367
|
PDF
|