C16 EQUIVALENT Search Results

ISL6529

Abstract: ISL6529A ISL6529ACB ISL6529ACBZ ISL6529ACR MO-220
Contextual Info: ISL6529, ISL6529A Data Sheet April 12, 2005 Dual Regulator–Synchronous Rectified Buck PWM and Linear Power Controllers The ISL6529, ISL6529A provide the power control and protection for two output voltages in high-performance graphics cards and other embedded processor applications.

RO4350B

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 4, 8/2013 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

mrfe6vp61k25h

Abstract: transistor MRFE6VP61K25H ATC100B102KT50XT MRFE6VP C5750X7S2A106MT ATC100B471JT200XT B10TJL J506 equivalent 87.5-108 mhz w power Arlon
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 2, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP61K25HR6 MRFE6VP61K25HSR6 These high ruggedness devices are designed for use in high VSWR industrial

ATC600F241JT

Abstract: GRM31CR61H106KA12L atc 17-25 transistor 62 Z27 transistor J103 transistor 3 pin AFT05 GRM31CR61H106K 0806SQ-5N5GLC GRM31CR61H106KA12
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of

MRF5S4140H

Contextual Info: Document Number: MRF5S4140H Rev. 0, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these

mw4ic915nb

Abstract: AN1977 AN1987 MW4IC915GNBR1 MW4IC915NBR1 A113 AN1955 ic marking z7 GM 950 motorola
Contextual Info: Freescale Semiconductor Technical Data MW4IC915N Rev. 7, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915NB/GNB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage

AFT09MS031NR1

Abstract: Z11-Z16 GRM21BR72A103KA01B ATC100A220JT150XT transistor Z6 Coilcraft Design Tools
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of

M27500-16RC1509

Abstract: ferronics 11-750-K 11-750-K 12-365-K UT-90-25 Micro-coax UT m27500-16 m27500 transfer impedance transformer mttf MRFE6VP100HR5
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP100H Rev. 0, 5/2012 RF Power LDMOS Transistors MRFE6VP100HR5 MRFE6VP100HSR5 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM,

transistor B 764

Abstract: ATC600F150JT250XT 0051A
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MP055N Rev. 0, 7/2013 RF Power LDMOS Transistors AFT09MP055NR1 AFT09MP055GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from

1N3906

Abstract: EEL25 SB540CT 1N3906 datasheet EE25L 2N3904 top245p 33 uF 400 V LTV817A 1N4005
Contextual Info: Design Idea DI-55 TOPSwitch-GX 20 W 25 W peak DVD Supply Application Device Power Output Input Voltage Output Voltage Topology DVD TOP245P 20 W (25 W pk) 85-265 VAC 3.3 V / 5 V / 12 V / -24 V Flyback Design Highlights The external current limit programming and remote ON/OFF

mtg226pa

Abstract: A213SYZQ TT11 TTE41NGWW2T 94v0 c29 MTF206N TT11EGRA7T1/4 A203SYCQ a107m Tyco Electronics toggle
Contextual Info: Toggle Switches C Toggle Switches TST Series - Page C5 TT Series - Page C8 ATE Series - Page C19 A Series - Page C22 AE Series - Page C35 MT Series - Page C43 C1 Catalog 1308390 Issued 9-04 www.tycoelectronics.com Dimensions are in inches and millimeters unless otherwise

M.P Diode

Abstract: titanium M2 DIODE Diode M2 MP transistor MP2013 P4M2
Contextual Info: Mpulse Microwave 576 Charcot Ave, San Jose, CA 95131 408 432-1480 FAX: (408) 432-3440 http://www.mpulsemw.com e-mail: techsupport@mpulsemw.com Microwave Schottky Diodes FEATURES High F CO - N Type Low I/F Noise - P Type Sputtered Contacts for Optimum Bondability and Reliability

Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR

Contextual Info: Document Number: MRF5S9101N Rev. 4, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101NR1 MRF5S9101NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier

RL-1282-33-43

Abstract: RL-1283-10-43 RL-1282-47-43 RL-1283-33-43 LM2678-ADJ Nichicon code WV LM2678 LM2678S-12 LM2678S-ADJ renco- 47 uH, L39, Renco, Through Hole
Contextual Info: LM2678 SIMPLE SWITCHER High Efficiency 5A Step-Down Voltage Regulator General Description Features The LM2678 series of regulators are monolithic integrated circuits which provide all of the active functions for a step-down buck switching regulator capable of driving up to

A113

Abstract: A114 A115 AN1955 C101 JESD22 MRF6S9125N MRF6S9125NBR1 MRF6S9125NR1 515D107M050BB6A
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with

TRANSISTOR J477

Abstract: krc 118 048 J477 mosfet krc 118 056 J493 TRANSISTOR J477 71 302 zl TRANSISTOR J477 48 Fair-Rite ATC J56-1
Contextual Info: Preliminary Data Sheet April 2003 AGR21010E 10 W, 2000 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21010E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular, personal communications system (PCS), digital communication system (DCS), and

A113

Abstract: AN1955 AN1987 MW5IC2030GMBR1 MW5IC2030M MW5IC2030MBR1 MW5IC2030NBR1 600s3r9at
Contextual Info: Document Number: MW5IC2030M Freescale Semiconductor Rev. 6, 1/2006 Replaced by MW5IC2030NBR1 GNBR1 . There are no form, fit or function changes with this Technical Data part replacement. N suffix added to part number to indicate transition to lead - free terminations.

IR 448H

Abstract: metelics FSCM 59365 FSCM 59365
Contextual Info: MSS-50,000 Series High Barrier Schottky Diode metelics CORPORATION Features Applications • Low Rs — 5fi • High dynamic range mixers, modulators, samplers • High Fco — 370 GHz • Doublers • Low leakage current <1 nA at IV typical • High-speed switches

600S3R9AT

Abstract: GRM-215 Marking Z7 Gate Driver MOTOROLA LOT MARKINGS A113 AN1955 AN1987 MW5IC2030GNBR1 MW5IC2030NBR1 600S2R2AT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW5IC2030N Rev. 7, 1/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030N wideband integrated circuit is designed with on - chip matching that makes it usable from 1930 to 1990 MHz. This multi - stage

LDMOS DVB-T transistors

Abstract: 470-860 CRCW120610RJ RF high POWER TRANSISTOR
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V3090N Rev. 1, 12/2011 RF Power LDMOS Transistors MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with

MOTOROLA ELECTROLYTIC CAPACITOR

Abstract: motorola L6 transistor NPN 30 watt BD136 MRF897R TL11 250UF 10 uF 35 volt capacitor
Contextual Info: MOTOROLA Order this document by MRF897R/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF897R Designed for 24 Volt UHF large–signal, common emitter, class–AB linear amplifier applications in industrial and commercial FM/AM equipment operating

marking code 33 c11

Abstract: SCHEMATIC DIAGRAM adapter 12v 5A L39 Renco
Contextual Info: LM2679 SIMPLE SWITCHER 5A Step-Down Voltage Regulator with Adjustable Current Limit General Description Features The LM2679 series of regulators are monolithic integrated circuits which provide all of the active functions for a stepdown buck switching regulator capable of driving up to 5A