C14A 5 Search Results

D78C10

Abstract: D78C10A PD78C14 PD78C10A PBYC D78C14AG-XXX-AB d78c14ag PD78C10ACW AGQ-36 AGQ-XXX-36
Contextual Info: [□427525 0042b4T |\|EC NEC Electronics Inc. T14 • NECE JUPD78C14 Family iiPD78C10A/C11A/C12A/C14/C14A/CP14 8 ' Bit’ Single-Chip Microcontrollers With A/D Converter Septem ber 1993 Description Features This fam ily of m icrocontrollers integrates sophisti­

74HC4096

Abstract: EQUIVALENT TIMER IC WITH CD 4060 rs flip-flop IC 7400 C4050A shiftregister PIPO C148A LS 7476 L1AA C4051A LS294
Contextual Info: Selection Guide C2MOS Logic TC74HC/HCT Series 2. High Speed CMOS Selection Guide GATE NAND HCOOA NOR AND OR INVERTER, BUFFER EXCLUSIVE OR/NOR SC HM ITT TRIGGER HC02A HC08A H C31A H C04A H C86A H C14A H C51A H C4049A M ULTI FUNCTION LEVEL SHIFTER HCTOOA HCT02A

d78c14

Abstract: PD78C10A D78C12A yto oscillator c19a 9266B D78CP14 D78C1 CP14A F256B
Contextual Info: N E C NEC Electronics Inc. JHPD78C14 Family iiPD78C10A/C11A/C12A/C14/C14A/CP14 8 -Bit>Single-Chip Microcontrollers With A/D Converter September 1993 Description Features This fam ily of m icrocontrollers integrates sophisti­ cated on-chip peripheral functions norm ally provided

Contextual Info: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this

C14A

Abstract: DS-0505 C14A 5 D12A D48A 0911A
Contextual Info: PRELIMINARY ® INNOVATION and EXCELLENCE Dual Output A-Series, BWR Models High-Reliability, 1" x 2" 15-17 Watt, DC/DC Converters A-SERIES Features „ Output voltages: ±5, ±12 or ±15 Volts „ Input voltage ranges: 10-18V, 18-36V or 36-75V „ Small packages, 1" x 2" x 0.48"

C14A

Contextual Info: ® INNOVATION and EXCELLENCE Dual Output A-Series, BWR Models High-Reliability, 1" x 2" 15-17 Watt, DC/DC Converters A-SERIES Features ! Output voltages: ±5, ±12 or ±15 Volts ! Input voltage ranges: 10-18V, 18-36V or 36-75V ! Small packages, 1" x 2" x 0.48"

c14a

Contextual Info: BWR Series www.murata-ps.com 15-17W, Dual Output DC/DC Converters Typical units FEATURES PRODUCT OVERVIEW  Output voltages: ±5, ±12 or ±15 Volts  Input voltage ranges: 10-18V, 18-36V or 36-75V  Small packages, 1" x 2" x 0.48"  Industry-standard pinouts

Contextual Info: A-SERIES Dual Output A-Series, BWR Models High-Reliability, 1" x 2" 15-17 Watt, DC/DC Converters For full details go to www.cd4power.com/rohs Features  Output voltages: ±5, ±12 or ±15 Volts  Input voltage ranges: 10-18V, 18-36V or 36-75V  Small packages, 1" x 2" x 0.48"

marking c14a

Abstract: RO3010 mrf372 marking L4A c7a series vishay capacitor NTHS-1206J14520R5 bc16a C15B transistor D 863 vishay 1001
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of

part marking information vishay HD 1

Abstract: l1a marking MRF372R5
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

Contextual Info: ® A SUBSIDIARY OF C&D TECHNOLOGIES Dual Output A-Series, BWR Models High-Reliability, 1" x 2" 15-17 Watt, DC/DC Converters A-SERIES Features  Output voltages: ±5, ±12 or ±15 Volts  Input voltage ranges: 10-18V, 18-36V or 36-75V  Small packages, 1" x 2" x 0.48"

Contextual Info: ® A SUBSIDIARY OF C&D TECHNOLOGIES Dual Output A-Series, BWR Models High-Reliability, 1" x 2" 15-17 Watt, DC/DC Converters A-SERIES Features  Output voltages: ±5, ±12 or ±15 Volts  Input voltage ranges: 10-18V, 18-36V or 36-75V  Small packages, 1" x 2" x 0.48"

marking c14a

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of

RO3010

Abstract: C14A z14b
Contextual Info: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device

Z14b

Abstract: Z10A Z12B Z10B z11b r1a transistor C14A RO3010 C12A C12B
Contextual Info: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.

Vj3640Y

Abstract: transistor L1A
Contextual Info: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device

Contextual Info: m m ¿s. m T N - 5 2 3 6 M A Y -30-75 2 SD 4 I 2 N P N l W > IJ□ > h y > h> m % i&mtânti ì ì ì i fs ¿ v'fàMJÊ. x j ' v T X f o y - ij > h 's W à ra h h O u tlin e U n it ^ mm) o a V- ? ^ fâftrS Œ  'i'iÉ ^ o o/svvxi— ?F X 'i , 'Jw — Fy^'—

sot-23 Marking c14A

Contextual Info: LMV7219 www.ti.com SNOS458F – APRIL 2000 – REVISED MARCH 2013 LMV7219 7 nsec, 2.7V to 5V Comparator with Rail-to-Rail Output Check for Samples: LMV7219 FEATURES 1 • 2 • • • • • • • VS = 5V, TA = 25°C, Typical Values Unless Specified

MA4P7436-1141T

Abstract: AS080447-33N IA2410 AS120252-9R3N PD85006L-E SOT323-5 C1P SOT23 GRM42-6 COG c6p SOT23 PD85035s-e
Contextual Info: STEVAL-TDR011V1 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Data brief Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 13.6 V ■ Output power: 50 W ■ Current: < 10 A

Contextual Info: TL1WK-NW1,L LED Lamps InGaN and Phosphor TL1WK-NW1,L 1. Applications • General Lighting 2. Features 1 Size: 0.65 (L) mm x 0.65 (W) mm × 0.36 (H) mm (2) High luminous flux LED: 21.8 lm (typ.) @IF = 60 mA (3) Color: White (color temperature: 5000 K (typ.)

C3B Kemet

Contextual Info: MOTOROLA Order this document by MRF372/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device

J352

Contextual Info: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

AS080447-33N

Abstract: l0422 IA2410 C22A c2f sot AS120252-9R3N IA4910 C2F SOT23 PD85006L-E PD85035S-E
Contextual Info: STEVAL-TDR011V1 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 13.6 V ■ Output power: 50 W ■ Current: < 10 A ■ Input power: 20 dBm

ia2410

Contextual Info: STEVAL-TDR011V1 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 13.6 V ■ Output power: 50 W ■ Current: < 10 A ■ Input power: 20 dBm