C10CI Search Results
C10CI Datasheets Context Search
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Contextual Info: TOSHIBA 1 C10CI7247 0 0 2 1 4 0 ^ 40b • POWER GaAs MM 1C MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD0708-2 Features* ■ HIGH POWER ■ BROAD BAND INTERNALLY MATCHED PldB= 33 dBm at 7.1 to 8. 5 GHz ■ HIGH GAIN ■ HERMETICALLY SEALED PACKAGE GldB= 22 dB at 7. 1 to 8.5 GHz |
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c10ci7247tmd0708-22-11e1atdt7247 | |
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Contextual Info: TOSHIBA -CDISC R E T E / O P T O } 90972,50 T O SH IB A 5b ß F J c10ci7 2 S 0 OQOflOSO DI SCRETE/OPTO SILICON NPN TRIPLE DIFFUSED TYPE_ HIGH POWER SWITCHING,AMPLIFIER, D C :D C CONVERTER, INVERTER A N D R E G U LATOR A P P L I C A T I O N S FEATURES: |
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200ma | |
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Contextual Info: TOSHIBAi ELECTRONIC 02 c10ci7247 DOlfi?11]! 7 I 51 0 9 r- - 16-BITS Hi-SPEED D/A CONVERTER Unit in mm TD6711N is a dual-slope single-integral system 16-bits D/A converter designed for use in P C M digital audio equipments. . Corresponding w i t h 2's complement code. |
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i724716-bitstd6711n60khz+2 | |
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Contextual Info: TOSHIBA D LOGIC/MEMORY 4,194,304 W O R D x 1 B lf D Y N A M IC RA M '• c10ci754fl 0 0 2 0 1 3 2 -1 ■ T-4C-2Z-ÌST This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514100AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 |
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c10ci754fltc514100ap/aj/asj/az300/350mlltc5141ooap/aj/asj/az-60 | |
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Contextual Info: ~5b TOSHIBA OISCRETE/OPTOÜ- 9097250 TOSHIBA <DISCRETE/OPTO> » F | c10ci?2SD □□07301 5bC 07 301 U Y - 3 3 - / 7 2SA1305 SILICON PNP EPITA X IA L TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS. Unit in mm CAR RADIO AND CAR STEREO OUTPUT STAGE APPLICATIONS. |
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2sa13052sc3297llllltllllllllll11llllllllllillllllllil | |
MPU85-347Contextual Info: TOSHIBA CUC/UP . WE C • iai7 2 4 1 _ 0 Q ia0 D 1 7 ■ 1 ~ - 5 Z 'J 3 '0 3 TOSHIBA TMP82C255A/TMP82C265A CMOS PROGRAMMABLE PERIPHERAL INTERFACE TMP82C255AN-2 / TMP82C265AF-2 TMP82C255AN-10 / TMP82C265AF-10 |
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tmp82c255a/tmp82c265atmp82c255an-2tmp82c265af-2tmp82c255an-10+5 | |
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Contextual Info: t TO SH IB A UC/UP S i)E D • 0Q2Dlflfl 7T4 « T 0 S 3 TOSHIBA T M P 47C 456A /956A ► CMOS 4-BIT MICROCONTROLLER T w TMP47C456AF I The 47C456A is a high speed and high perform ance 4 -b it single chip m icrocom puter based on th e TLCS-47 CMOS series. The 47C 456A has LCD driver, D TM F g e n e ra to r and large-capacity RAM fo r reperto ry dial, which |
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/956atmp47c456af47c456atlcs-47+4 | |
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Contextual Info: TOSHIBA UC/UP fciME D • ^ 7 2 ^ DD2b7D4 725 MT0S3 FLOPPY DISK CONTROLLER 11 TC8566AF F lo p p y D is k C ontroller 1. INTRODUCTION TC8566AF is a single chip LSI for Floppy Disk controller which has VFO and other circuits with FDC chip for interfacing a processor to floppy |
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tc8566aftc8565ap16mhz500kbps+5 | |
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Contextual Info: TOS H IB A UC/UP 54E J> m TGTTSm 0D53Ö31 TO SH IB A 1. TbB TMP68442 INTRODUCTION TLCS-68000 microprocessors utilize state-of-the-art MOS technology to m axim ize performance and throughput. The TMP68442 extended dual-direct memory access controller (EDDMA) is designed to com plem ent the perform ance and a rch ite ctu ral |
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tmp68442tlcs-68000tmp68450eddma-109 | |
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Contextual Info: 1 0 ^ 7 2 4 7 O D I A D A S t> TOSHIBA-, E L E C T R O N I C D2 h \i ELECTRONIC VOLUME Unit in mm The TC9155/56AP is an optimum c 2m o s IC which has been designed for electronization of tone control of audio equipment with the following features. . Allows 13-step variable control form -6 to 0 to |
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tc9155/56ap13-steptc9155aptc9156ap | |
SP126
Abstract: lg lcd tv panel circuit diagram free SPC8106F0B SPC8108FOC 4X12 lcd SP-1108 sp1 1r4 FL400 xe p001 XCSL
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spc8106sp1-127x12-sp-001-07q0g57b3+10 | |
TMP68HC000P-16
Abstract: TLCS-68000 TMP68HC000P12 TMP68HC000P-10 TMP68HCOOO TMP68HC000P10 68488 TMP68HC000F-12 TMP68HC000N-10 TMP68HC000N-16
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tmp68hc000tmp68hc000p-10tmp68hc000p-12tmp68hc000p-16+12 | |
TC55257
Abstract: tc51832fl-10 tc51832fl 128X8 A12C TC51832 TC51832F TC51832P TC51832PL-10 TC51832SPL-10
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d025d11tc51832tc51832sp-85tc51832spl-85+12 | |
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Contextual Info: TOSHIBA -CDISCRETE/OPTOJ 9097250 3^ TOSHIBA Í Íf| T D ^ E S Q <D I S C R E T E / O P T O ) 39C 00441 U n it i n mm O UHF ~ C ^ K ffi $É -f i f fe O f i i ti o o O H F - C Band Low N o ise A m p l i f i e r A p p l i c a t i o n s , H ig h S peed S w i tc h i n g A p p l i c a t i o n s . |
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00d04432sc15593sc1559 | |
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Contextual Info: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC551001BPL/BFL/BFTL/BTRL-70V/85V SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology, |
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tc551001bpl/bfl/bftl/btrl-70v/85vtc551001bpltc551001sr01060795+4 | |
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Contextual Info: — TOSHIBA UC/UP fc>4E J> • ^ 7 2 4 ^ GQ2bG17 1 1 _ TD7 « T O S a REAL TIME CLOCK | | TC8250P/AP Real Time Clock 1. INTRODUCTION The TC8250P or TC8250AP is a single chip C-MOS LSI for real time clock, which is composed as a peripheral LSI of a microcomputer. |
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gq2bg17tc8250p/aptc8250ptc8250ap+5 | |
TC518128AF-10
Abstract: TC518128APL-10
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tc518128atc518128ap/asp/af/afwtc518128apl/aspl/afl/afwltc518128aftl/atrl+6 | |
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Contextual Info: TOSHIBA 1 TMP68C711E9 INTRODUCTION The TM P68C711E9 is an advanced 8 -b it m icrocontroller MCU w ith h ig h ly sophisticated on-chip peripheral capabilities. New design techniques w ere used to achieve a nom inal bus speed of 2.1MHz. In addition, the fully static design allows |
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tmp68c711e9p68c711e916-bitdip48-p-600+4 | |
transistor 6bw
Abstract: DLA DIODE TOSHIBA
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ta7805fta7809fta7818fta78057f+8 | |
D417GContextual Info: T O S H IB A TENTATIVE TC55V4376FF-100,-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-W ORD BY 36-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4376FF is a 4,718,592-bit synchronous Flow through static random access memory SRAM |
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tc55v4376ff-10036-bittc55v4376ff592-bit+5 | |
tc51864Contextual Info: TOSHIBA T C 5 1 8 6 4 P L /F L S 5 /1 0 PRELIM INARY SILICON GATE CMOS 65,536 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC51864PL is a 512K bit high speed CMOS pseudo static RAM organized as 65,536 words by 8 bits. The TC51864PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The |
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tc51864pltc51864pl/fl-85/10002b4tc51864 | |
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Contextual Info: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5118320B J/BFT-60/70 PRELIMINARY 524,288 WORD X 32 BIT DYNAMIC RAM Description The TC5118320BJ/BFT is the new generation dynamic RAM organized 524,288 words by 18 bits. The TC5118320BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both |
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tc5118320bj/bft-60/70tc5118320bj/bft400mil+3 | |
LDR orp 60Contextual Info: TOSHIBA Discrete Sem iconductors 2SJ240 Field Effect Transistor Industrial Applications Silicon P Channel M O SType L 2-k-MOS IV 10 ± 0.3 . Unit in mm 0 3.2 ±0.2 2.7 ±0.2 High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications |
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2sj240-100pa20kpowg0e1s72+1 | |
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Contextual Info: TO SH IBA TC74VHC20 F/FN/FS/FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHC20F, TC74VHC20FN, TC74VHC20FS, TC74VHC20FT DUAL 4 -INPUT NAND GATE The TC74VHC20 is an advanced high speed CMOS 4-INPUT NAND GATE fabricated with silicon gate C2MOS technology. |
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tc74vhc20tc74vhc20ftc74vhc20fntc74vhc20fs+5 | |