C10 5T Search Results

71051

Abstract: 71055 71059 EA-C10 0.18-um CMOS technology characteristics CMOS-10 RAC RAMBUS fi01 2127k CB-C10
Contextual Info: EA-C10 2.5-Volt, 0.25-Micron drawn CMOS Embedded Array NEC Electronics Inc. Preliminary March 1997 Figure 1. Embedded Array Core Integration Description The high-speed 0.25 µm drawn (0.18 µm L-effective) EA-C10 embedded array family offers both support for

D78 NEC

Abstract: spx 1404 DSPG 71051 MCM NAND VR10000 NEC 71055 986M
Contextual Info: CB-C10 2.5-Volt, 0.25-Micron drawn CMOS Cell-Based ASIC NEC Electronics Inc. Preliminary March 1997 Figure 1. Chip Size Package (CSP) Description NEC’s 0.25 µm drawn (0.18 µm L-effective) CB-C10 family incorporates ultra-high-performance cores with deep submicron process technology for high-end applications

DV103003

Abstract: ic 4570 datasheet TEC H bridge square loop antenna ic 8870 MCRF355 200B AN725 DK-2750 RG41
Contextual Info: AN725 Optimizing Read-Range of the 13.56 MHz Demonstration Reader Author: Youbok Lee, Ph.D Microchip Technology Inc. 3. Connect the new inductor antenna and capacitor to the demo reader board by following these steps: a) Disconnect the C31, C9, and C10 from the

D78 NEC

Abstract: 986M
Contextual Info: CB-C10 2.5-Volt, 0.25-M icron drawn CMOS Cell-Based ASIC NEC NEC Electronics Inc. Preliminary March 1997 Figure 1. Chip Size Package (CSP) Description NEC’s 0.25 n.m drawn (0.18 (j.mL-effective)CB-C10family incorporates ultra-high-performance cores with deep sub­

K4S641632D-TL1L

Contextual Info: SERIAL PRESENCE DETECT PC66 SODIMM PC66 SODIMM 144pin SPD Specification (64Mb D-die base) Rev. 0.2 May 2000 Rev 0.2 May. 2000 SERIAL PRESENCE DETECT PC66 SODIMM M466S0424DT0-L10, C10 • Organization : 4Mx64 • Composition : 4Mx16 *4 • Used component part # : K4S641632D-TL10, TC10

D15CR22

Abstract: Cutler-Hammer CE15SN3 c316fna3 D15CR40 C306DN3 westinghouse contactor C320TP1 V201KRCJZ1 westinghouse switchgear D15CR31
Contextual Info: Switchgear and Control Table Of Contents Freedom Contactors and Accessories 4kW to 160kW . . . . . . . . . . . . . . . . . . . . . . . . .216-219 Heavy Current Contactors (240kW to 710kW) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .220

ATC100B471JT200XT

Abstract: EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY MRFE6VS25N C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

D260-4118-0000

Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

TDK Ferrite Balun

Abstract: FM LDMOS freescale transistor NI-1230-4H 1812sms-39njlc awg 4 high temperature wire resistance calculator MRFE6VP61K25H NI-1230-4S mrfe6vp61k2 PCN15551 MRFE6VP
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4, 3/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace

ATC200B103KT50X

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace

NEC 09030

Abstract: NEM090303M-28 8712 RESISTOR ldmos nec
Contextual Info: PRELIMINARY DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NEM090303M-28 N-CHANNEL SILICON POWER MOS FET FOR UHF-BAND POWER AMPLIFIER DESCRIPTION The NEM090303M-28 is an N-channel enhancement-mode lateral MOS FET designed for driver stage in 0.5 to 1.0 GHz PA, such as, analog/digital TV-transmitter and GSM/D-AMPS/PDC cellular base station amplifiers. Dies are

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 2, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP61K25HR6 MRFE6VP61K25HSR6 These high ruggedness devices are designed for use in high VSWR industrial

mrfe6vp61k25h

Abstract: transistor MRFE6VP61K25H ATC100B102KT50XT MRFE6VP C5750X7S2A106MT ATC100B471JT200XT B10TJL J506 equivalent 87.5-108 mhz w power Arlon
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 2, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP61K25HR6 MRFE6VP61K25HSR6 These high ruggedness devices are designed for use in high VSWR industrial

MCP2120

Abstract: pic16f84 tutorial TB048 AN756 MCP2150 DS21618 serial port to ttl using max232 MAX232 14 pin DS51246A
Contextual Info: MCP2120/MCP2150 DEVELOPER’S KIT USER’S GUIDE Information contained in this publication regarding device applications and the like is intended by way of suggestion only. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with

AM85C30

Abstract: AM85C30-16JI AMD fm1 Pin Package IN SDLC PROTOCOL 53C80 80C286 WR10 AMD FM1 Z80 CPU PHYSICAL DIMENSIONS LCC
Contextual Info: FINAL Am85C30 Enhanced Serial Communications Controller DISTINCTIVE CHARACTERISTICS • Fastest data rate of any Am8530 — 8.192 MHz / 2.048 Mb/s — 10 MHz / 2.5 Mb/s — 16.384 MHz / 4.096 Mb/s ■ Low-power CMOS technology ■ Pin and function compatible with other NMOS

MRF5S4140H

Contextual Info: Document Number: MRF5S4140H Rev. 0, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these

C8450

Abstract: MRF5S4140H
Contextual Info: Document Number: MRF5S4140H Rev. 1, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these

D260-4118-0000

Abstract: 0119A 0190A
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

Contextual Info: U R G E CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS • F o r high ripple current application such as air conditioning system •Endurance with ripple current: 85°C 3000 hours •Custom-made parts are also available upon requests ♦SPECIFICATIONS Items

Contextual Info: Document Number: MRF9045N Rev. 12, 9/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device

Contextual Info: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9045N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9045NBR1 • Typical Performance at 945 MHz, 28 Volts Output Power — 45 Watts PEP Power Gain — 19 dB

NIPPON CAPACITORS

Abstract: Transistor J438 CRCW08051001FKEA MRF21010
Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF21010LSR1 N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier