C10 5T Search Results

71051

Abstract: 71055 71059 EA-C10 0.18-um CMOS technology characteristics CMOS-10 RAC RAMBUS fi01 2127k CB-C10
Contextual Info: EA-C10 2.5-Volt, 0.25-Micron drawn CMOS Embedded Array NEC Electronics Inc. Preliminary March 1997 Figure 1. Embedded Array Core Integration Description The high-speed 0.25 µm drawn (0.18 µm L-effective) EA-C10 embedded array family offers both support for

D78 NEC

Abstract: spx 1404 DSPG 71051 MCM NAND VR10000 NEC 71055 986M
Contextual Info: CB-C10 2.5-Volt, 0.25-Micron drawn CMOS Cell-Based ASIC NEC Electronics Inc. Preliminary March 1997 Figure 1. Chip Size Package (CSP) Description NEC’s 0.25 µm drawn (0.18 µm L-effective) CB-C10 family incorporates ultra-high-performance cores with deep submicron process technology for high-end applications

DV103003

Abstract: MCRF355 200B AN725 DK-2750
Contextual Info: AN725 Optimizing Read-Range of the 13.56 MHz Demonstration Reader Author: Youbok Lee, Ph.D Microchip Technology Inc. 3. Connect the new inductor antenna and capacitor to the demo reader board by following these steps: a) Disconnect the C31, C9, and C10 from the

DV103003

Abstract: ic 4570 datasheet TEC H bridge square loop antenna ic 8870 MCRF355 200B AN725 DK-2750 RG41
Contextual Info: AN725 Optimizing Read-Range of the 13.56 MHz Demonstration Reader Author: Youbok Lee, Ph.D Microchip Technology Inc. 3. Connect the new inductor antenna and capacitor to the demo reader board by following these steps: a) Disconnect the C31, C9, and C10 from the

D78 NEC

Abstract: 986M
Contextual Info: CB-C10 2.5-Volt, 0.25-M icron drawn CMOS Cell-Based ASIC NEC NEC Electronics Inc. Preliminary March 1997 Figure 1. Chip Size Package (CSP) Description NEC’s 0.25 n.m drawn (0.18 (j.mL-effective)CB-C10family incorporates ultra-high-performance cores with deep sub­

K4S641632D-TL1L

Contextual Info: SERIAL PRESENCE DETECT PC66 SODIMM PC66 SODIMM 144pin SPD Specification (64Mb D-die base) Rev. 0.2 May 2000 Rev 0.2 May. 2000 SERIAL PRESENCE DETECT PC66 SODIMM M466S0424DT0-L10, C10 • Organization : 4Mx64 • Composition : 4Mx16 *4 • Used component part # : K4S641632D-TL10, TC10

diode c12

Abstract: zener c18 hp DIODE C13 C13P zener 18 01UF 12NH 18PF 30PF LK802
Contextual Info: RF in C6 1PF 7 2500mu Ferr Long UT34-25 1.3in C4 18PF C5 18PF 19 L2 12NH 4 C3 7.5PF R2 1.5K R1 1.5K 17 22 C1 3PF 10K pot 10K pot 2 1 General 24 HP 7.5V 18 18AWG 5turns C9 30PF 63V,47uf C10 3.6PF C8 30PF 63V,47uf Vds=28Vdc 1.6in Sheet TB 150 1 470 - 860MHz , 45W, 28V

Contextual Info: V23818-C10-V10 Small Form Factor Multim ode 850 nm LED Ethernet/10BASE-FL/4M-16M Token Ring 1x5 Transceiver w ith VF-45 Connector D im e n s io n s in m m in c h e s C-J (• /") o n<5T^> 2 _ O ^ O m s * g G 5 z l o p n i c ® (12.7) .499 Q oN3 < > wS

RAC RAMBUS

Abstract: ha 1452 EA-C10
Contextual Info: IV IF C “ E A -C 10 2 .5 -V o lt, 0 .2 5 -M ic ro n d ra w n C M O S E m b e d d e d A rra y NEC Electronics Inc. Preliminary March 1997 Figure 1. Embedded Array Core Integration Description The high-speed 0.25|nm drawn (0.18 jxm L-effective) EA-C10 embedded array family offers both support for

HA12216

Abstract: HA12163 HA12216F HA12217F HA12218F HA12221F HA12222F 14,8 to 100 v 400hz Hitachi DSA00480
Contextual Info: HA12216F/HA12221F Series Audio Signal Processor for Car Deck Decode only Dolby B type NR with PB Amp. ADE-207-254D (Z) 5th Edition Jun. 1999 Description HA12216F/HA12221F series are silicon monolithic bipolar IC providing Dolby B type noise reduction, music sensor, PB equalizer system in one chip.

RL56

Abstract: RL-56
Contextual Info: Primary Regulators PQ1PF1 PQ1PF1 Primary Regulator for Switching Power Supply 50W Class • Outline Dimensions 4.5±0.2 10.2MAX φ3.2±0.1 2.8±0.2 16.4±0.7 3.6±0.2 7.4±0.2 PQ1PF1 (1.5) ¡Switching power supplies for VCRs ¡Switching power supplies for word processors

IVC2 advanced programming guide

Abstract: IVC2 toshiba MEP-c5 MEPUM06008 mep toshiba programming Toshiba MeP MEP toshiba MEP core TOSHIBA CONFIDENTIAL saturation instructions
Contextual Info: Additional Manual for MeP c5+IVC2 C Compiler Additional Manual for MeP c5+IVC2 C Compiler Revision 1.9 Dec. 11, 2009 Semiconductor Company TOSHIBA CONFIDENTIAL MEPUM06008_E19G i Additional Manual for MeP c5+IVC2 C Compiler Preface This manual is prepared for the tools that support MeP（Media embedded Processor） c5 processor

Contextual Info: 64 J9 Header, DNP 1 2 3 4 5 6 L1 Demonstration Board – EPC9102 Schematic VIN VIN_FILT 1 Q19 GPUL J1 Q21 EPC2001 EPC2001 GPUR C3, C6, C9 Rev. 1.0 C39, C42 A 2.2uF DNP PRYSWB T2 PRYSWA A 5T ER18 R6 10 D9 BAT41 VIN_FILT J4 5 5 4 2 C36 0.1U EPC2001 1 GND D2

GRM21BB31

Abstract: 01K0790-20 GRM1882C1H270JA01 Waka 01K0790-20 MCR03J472 D20-74N7 NE5550234 4.7n2
Contextual Info: A Business Partner of Renesas Electronics Corporation. NE5550234 Data Sheet R09DS0039EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm

Panasonic R1766

Contextual Info: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550234 R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm

ne5550

Contextual Info: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm

Panasonic R1766

Contextual Info: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm

D15CR22

Abstract: Cutler-Hammer CE15SN3 c316fna3 D15CR40 C306DN3 westinghouse contactor C320TP1 V201KRCJZ1 westinghouse switchgear D15CR31
Contextual Info: Switchgear and Control Table Of Contents Freedom Contactors and Accessories 4kW to 160kW . . . . . . . . . . . . . . . . . . . . . . . . .216-219 Heavy Current Contactors (240kW to 710kW) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .220

11Z4

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. • Specified 26 Volts, 1.88 GHz Characteristics

LQW18AN4R7NG00

Abstract: ATC100A6R8BW ATC100A2R7JW GRM188B31C105KA92 ATC100A120BW MCR03J103 GQM1882C1H150JB01
Contextual Info: A NE5550779A RECOMMENDED OPERATING RANGE TA = 25C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Input Power Symbol VDS VGS IDS Pin Test Conditions f = 460 MHz, VDS = 7.5 V MIN. – 1.65 – – TYP. 7.5 2.20 1.4 25 MAX. 9.0

9601 TO 220

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices

ATC100B471JT200XT

Abstract: EB-38 651AT ATC100B181JT300XT ATC100B4R3CT500XT CDR33BX104AKWY MRFE6VS25N C5750KF1H226ZT Fair-Rite ATC MRFE6VS25NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 0, 6/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25NR1 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

D260-4118-0000

Abstract: MRFE6VS25L MRFE6VS25GNR1 transistor J128 2422D 21-201-J ATC100B2R7BT500XT crcw12065k60f avx c0805c103k5rac MRFE6VS25NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25N Rev. 1, 12/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to