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NE5550234 Datasheets (4)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NE5550234-AZ		Renesas Technology	RF FETs, Discrete Semiconductor Products, IC FET LDMOS 30V 0.6A 3MINIMOLD	Original	PDF		15
NE5550234-EV04-A		California Eastern Laboratories	RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD EVAL NPN MED PWR TRANS	Original	PDF		5
NE5550234-EV09-A		California Eastern Laboratories	RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD EVAL NPN MED PWR TRANS	Original	PDF		5
NE5550234-T1-AZ		Renesas Technology	RF FETs, Discrete Semiconductor Products, IC FET LDMOS 30V 0.6A 3MINIMOLD	Original	PDF		15

NE5550234 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
GRM21BB31 Abstract: 01K0790-20 GRM1882C1H270JA01 Waka 01K0790-20 MCR03J472 D20-74N7 NE5550234 4.7n2 Contextual Info: A Business Partner of Renesas Electronics Corporation. NE5550234 Data Sheet R09DS0039EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm	Original	ne5550234 r09ds0039ej0200 ne5550234-t1 ne5550234-az +10ne5550234-t1-az ws260 hs350 grm21bb31 01k0790-20 grm1882c1h270ja01 waka 01k0790-20 mcr03j472 d20-74n7 4.7n2	PDF
Contextual Info: Evaluation Board Document NE5550234-EV04-A Evaluation Board o Circuit Description o Typical Performance Data o Circuit Schematic and Assembly Drawing Circuit Description The NE5550234A-EV04-A is an evaluation circuit board for Renesas’ LDMOS power FET, NE5550234 optimized for the performance at 460MHz. The circuit board is RoHS compliant.	Original	ne5550234-ev04-a ne5550234a-ev04-a ne5550234 460mhz +128mil	PDF
74n7 Abstract: R1766T Contextual Info: Data Sheet NE5550234 R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)	Original	ne5550234 r09ds0039ej0300 ne5550234-az 74n7 +1r1766t	PDF
Panasonic R1766 Contextual Info: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550234 R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm	Original	ne5550234 r09ds0039ej0300 ne5550234-az hs350 +1panasonic r1766	PDF
74n7 Abstract: L1-L10 D2074 ne5550 Contextual Info: Data Sheet NE5550234 R09DS0039EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)	Original	ne5550234 r09ds0039ej0200 ne5550234-az 74n7 +3l1-l10 d2074 ne5550	PDF
Contextual Info: Evaluation Board Document NE5550234-EV09-A Evaluation Board o Circuit Description o Typical Performance Data o Circuit Schematic and Assembly Drawing Circuit Description The NE5550234-EV09-A is an evaluation circuit board for Renesas’ LDMOS power FET, NE5550234 optimized for the performance at 915MHz. The circuit board is RoHS compliant.	Original	ne5550234-ev09-a ne5550234 915mhz 28mil	PDF
SMD M05 sot23 Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404 Contextual Info: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly	Original	2013/4m smd m05 sot23 ne5531 ne352 +4a3 smd sot-343 transistor smd m05 smd transistor m05 transistor smd code 404	PDF