C 945 TRANSISTOR EQUIVALENT Search Results

Contextual Info: SENSITRON SEMICONDUCTOR SHD419203 TECHNICAL DATA DATA SHEET 945, REV. A Formerly part number SHD4193 PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N3741 • Surface Mount Package Absolute Maximum Ratings* Symbol

SO42

Abstract: STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier
Contextual Info: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002

Contextual Info: LET9060F RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 18 dB gain @ 945 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european

2L TRANSISTOR

Abstract: LET9060F 945 TRANSISTOR M250
Contextual Info: LET9060F RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 18 dB gain @ 945 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european

2L TRANSISTOR

Abstract: 945 TRANSISTOR transistor d 945 16824 transistor 945 LET9060C M243
Contextual Info: LET9060C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 18 dB gain @ 945 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european

PD85035C

Abstract: 945 TRANSISTOR M243
Contextual Info: PD85035C RF power transistor, LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.5 dB gain @ 945 MHz / 13.6 V ■ BeO-free ceramic package ■ ESD protection ■ In compliance with the 2002/95/EC european

PD85025C

Contextual Info: PD85025C RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 16 dB gain @ 945 MHz / 13.6 V ■

AN1294

Abstract: J-STD-020B PD57030-E PD57030S-E PD57030STR-E PD57030TR-E
Contextual Info: PD57030-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14dB gain @ 945 MHz / 28 V ■ New RF plastic package Description

Contextual Info: CD00002394 Rev 7.2 IN APPROVAL PAGE A ft RF power transistor the LdmoST family -D ra Technical Literature Alternate Identifier s Key process 7719 Product Development Dr ISO Definition aft CUSTOM ATTRIBUTES ft - Confidentiality Level Specification Public Technical Literature

Contextual Info: LET9070CB RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet - production data Features • Excellent thermal stability • Common source configuration • POUT @ 28 V = 70 W with 17 dB gain @ 945 MHz • BeO free package

AN1294

Abstract: PD57006 PD57006-E PD57006S PD57006S-E PD57006STR-E PD57006TR-E PD57006E
Contextual Info: PD57006-E PD57006S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 6W with 15dB gain @ 945MHz / 28V ■ New RF plastic package

PD57006-E

Abstract: SMD Transistor z6 AN1294 J-STD-020B PD57006S-E PD57006STR-E PD57006TR-E 0821 ST 12611 ZH30
Contextual Info: PD57006-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 6 W with 15dB gain @ 945 MHz / 28 V ■ New RF plastic package PowerSO-10RF

BTS 132 SMD

Contextual Info: PD57002-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 2 W with 15dB gain @ 960 MHz / 28 V ■ New RF plastic package

c 945 TRANSISTOR equivalent

Contextual Info: MC100EP16VC 3.3V / 5V ECL Differential Receiver/Driver with High Gain and Enable Output The EP16VC is a differential receiver/driver. The device is functionally equivalent to the EP16 and LVEP16 devices but with high gain and enable output. The EP16VC provides an EN input which is synchronized with the

PD57045S

Abstract: 700B AN1294 PD57045 PD57045-E PD57045S-E
Contextual Info: PD57045-E PD57045S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 45W with 13dB gain @ 945MHz / 28V ■ New RF plastic package

0843 12L

Contextual Info: SD57045-01  RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • ■ ■ ■ EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 45 W PEP with 13 dB gain @ 945 MHz BeO FREE PACKAGE DESCRIPTION The SD57045-01 is a common source N-Channel

Contextual Info: SD57045  RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • ■ ■ ■ EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 45 W PEP with 13 dB gain @ 945 MHz BeO FREE PACKAGE DESCRIPTION The SD57045 is a common source N-Channel

4863-2

Contextual Info: SD57060 RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M243 epoxy sealed DESCRIPTION

Contextual Info: MOTOROLA Order this document by MRF9045M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9045M MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device

Contextual Info: MOTOROLA Order this document by MRF9045MR1/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device

smd diode code 18W

Abstract: 3.40 pf variable capacitor 700B AN1294 PD57018 PD57018-E PD57018S PD57018S-E PD57018STR-E PD57018TR-E
Contextual Info: PD57018-E PD57018S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 18W with 16.5dB gain @ 945MHz /28V ■ New RF plastic package PowerSO-10RF

700B

Abstract: AN1294 J-STD-020B PD57018-E PD57018S-E PD57018STR-E PD57018TR-E
Contextual Info: PD57018-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 18 W with 16.5dB gain@945 MHz/28 V ■ New RF plastic package PowerSO-10RF

M250

Abstract: SD57060-01 TSD57060-01
Contextual Info: SD57060-01 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M250 epoxy sealed DESCRIPTION The SD57060-01 is a common source N-Channel

us 945 mosfet

Contextual Info: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9030MR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies