C 945 TRANSISTOR EQUIVALENT Search Results

Contextual Info: SENSITRON SEMICONDUCTOR SHD419203 TECHNICAL DATA DATA SHEET 945, REV. A Formerly part number SHD4193 PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N3741 • Surface Mount Package Absolute Maximum Ratings* Symbol

HP RF TRANSISTOR GUIDE

Abstract: MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor
Contextual Info: SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS Product Family As digital standards increasingly dominate the wireless communication market, Motorola’s RF LDMOS technology has become the industry’s technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola’s RF LDMOS

SO42

Abstract: STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier
Contextual Info: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002

Contextual Info: LET9060C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT @ 28 V = 60 W with 18 dB gain @ 945 MHz ■ POUT (@ 36 V)= 90 W with 18 dB gain @ 945

Contextual Info: LET9060F RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT @ 28 V = 60 W with 18 dB gain @ 945 MHz ■ POUT (@ 36 V)= 90 W with 18 dB gain @ 945

Contextual Info: LET9060C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 18 dB gain @ 945 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european

Contextual Info: LET9060F RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 18 dB gain @ 945 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european

2L TRANSISTOR

Abstract: LET9060F 945 TRANSISTOR M250
Contextual Info: LET9060F RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 18 dB gain @ 945 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european

2L TRANSISTOR

Abstract: 945 TRANSISTOR transistor d 945 16824 transistor 945 LET9060C M243
Contextual Info: LET9060C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 18 dB gain @ 945 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european

PD85035C

Abstract: 945 TRANSISTOR M243
Contextual Info: PD85035C RF power transistor, LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.5 dB gain @ 945 MHz / 13.6 V ■ BeO-free ceramic package ■ ESD protection ■ In compliance with the 2002/95/EC european

945 TRANSISTOR

Abstract: JESD97 M243 PD85025C
Contextual Info: PD85025C RF power transistor - LdmoST family Preliminary Data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 16 dB gain @ 945 MHz / 13.6 V ■ BeO free package ■ ESD protection ■ In compliance with the 2002/95/EC european

945 TRANSISTOR

Abstract: JESD97 M243 PD85035C transistor marked 12w
Contextual Info: PD85035C RF power transistor - LdmoST family Preliminary Data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.5 dB gain @ 945 MHz / 13.6 V ■ BeO-free ceramic package ■ ESD protection ■ In compliance with the 2002/95/EC european

Contextual Info: LET9070FB RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT @ 28 V = 70 W with 16 dB gain @ 945 MHz ■

GP413

Abstract: 945 TRANSISTOR 700B AN1294
Contextual Info: STAP57030 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14 dB gain @ 945 MHz / 28 V ■ ST advanced PowerSO-10RF / STAP package

2xi transistor

Contextual Info: LET9070CB RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet — preliminary data Features • Excellent thermal stability ■ Common source configuration ■ POUT @ 28 V = 70 W with 16 dB gain @ 945 MHz ■

Contextual Info: PD57030-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14dB gain @ 945 MHz / 28 V ■ New RF plastic package Description

PD57030-E

Abstract: 945 TRANSISTOR PD57030S AN1294 J-STD-020B PD57030S-E PD57030STR-E PD57030TR-E
Contextual Info: PD57030-E PD57030S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14dB gain @ 945 MHz / 28 V ■ New RF plastic package

PD57030S

Abstract: AN1294 JESD97 PD57030 PD57030-E PD57030S-E PD57030STR-E PD57030TR-E
Contextual Info: PD57030-E PD57030S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 30W with 14dB gain @ 945MHz / 28V ■ New RF plastic package

AN1294

Abstract: J-STD-020B PD57030-E PD57030S-E PD57030STR-E PD57030TR-E
Contextual Info: PD57030-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14dB gain @ 945 MHz / 28 V ■ New RF plastic package Description

945 TRANSISTOR

Abstract: 700B AN1294 GP413
Contextual Info: STAP57030 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14 dB gain @ 945 MHz / 28 V ■ ST advanced PowerSO-10RF / STAP package

Contextual Info: CD00002394 Rev 7.2 IN APPROVAL PAGE A ft RF power transistor the LdmoST family -D ra Technical Literature Alternate Identifier s Key process 7719 Product Development Dr ISO Definition aft CUSTOM ATTRIBUTES ft - Confidentiality Level Specification Public Technical Literature

Contextual Info: SD57030 RF power transistor the LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30W with 13dB gain @ 945MHz ■ BeO free package ■ Internal input matching ■ In compliance with the 2002/95/EC european directive

945 TRANSISTOR

Abstract: 700B M243 SD57030
Contextual Info: SD57030 RF power transistor the LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30W with 13dB gain @ 945MHz ■ BeO free package ■ Internal input matching ■ In compliance with the 2002/95/EC european directive

PD57045S

Abstract: 700B AN1294 RF Transistor s-parameter
Contextual Info: STAP57045 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary Data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 45 W with 13 dB gain @ 945 MHz / 28 V ■ ST advanced PowerSO-10RF-STAP package