C 704 DIODE Search Results

IRHNJ57230SE

Abstract: JANSR2N7486U3 12A50
Contextual Info: PD - 93836B IRHNJ57230SE JANSR2N7486U3 200V, N-CHANNEL REF: MIL-PRF-19500/704 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 4# c TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ57230SE 100K Rads (Si) RDS(on) 0.22Ω ID 12A QPL Part Number

piezoelectric transducer amplifier

Abstract: ON 4998 Wien Bridge Oscillator jfet circuit
Contextual Info: I j I/I \ Advanced 1 ALDI 704A/ALD1704B ALDI 704/ALD1704G L in e a r I D e v i c e s , In c. RAIL TO RAIL CMOS OPERATIONAL AMPLIFIER GENERAL DESCRIPTION FEATURES The ALD1704 is a CMOS monolilhic operational amplifier with MOSFET input thathasrail-to-rail in put and oulput voltage ranges. The in put voltage

4998 mosfet

Abstract: Wien Bridge Oscillator jfet circuit piezoelectric transducer amplifier ALD1704
Contextual Info: I / I I ^ S 1 / A dvanced L inear D evic e s , In c . ALDI 704A/ALD1704B ALDI 704/ALD1704G RAIL-TO-RAIL CMOS OPERATIONAL AMPLIFIER GENERAL DESCRIPTION FEATURES The ALD1704 is a CMOS monolithic operational amplifier with MOSFET input that has rail-to-rail input and output voltage ranges. The input voltage

Contextual Info: r r r - V I / I A dvanced 1 ALDI 704A/ALD1704B ALDI 704/ALD1704G L in e a r D e v ic e s , I n c . RAIL TO RAIL CMOS OPERATIONAL AMPLIFIER GENERAL DESCRIPTION FEATURES The ALD1704 is a CMOS monolithic operational amplifier with MOSFET input that has rail-to-rail input and output voltage ranges. The input voltage

BH45-704A

Abstract: BH 27 701A facon bd BH22-601A bl 44 704 facon facon bh 27 701 GB 44-706 facon bf facon VX230
Contextual Info: FACON 45E D • 345b503 OOOOOlù 5 « F C N FACON SEMICONDUCTEURS/SEMICONDUCTORS T-23-0\ m ouldings m ou lages Vr r m Types V V RMS re c o m ­ m en d ed m ax (V) ■d on re­ sistive load s u r c h arg e résis tive *d s m / *fsm Ip per diode @ VR U se

C 704 diode

Contextual Info: HC HCD HCS HCSD .1 00 GRID COMMERCIAL/INDUSTRIAL RELAYS • ■ ■ HC HCS HCD HCSD STANDARD • SENSITIVE .100 GRID COMMERCIAL RELAY STANDARD • SENSITIVE .100 GRID DIODE SUPPRESSED COMMERCIAL RELAY ■ ■ _ + TERMINAL VIEW TERMINAL VIEW FEATURES ■ ■

JANTX 1N916

Abstract: diode 1n4446 DA-Series 1n4148 D035 1N4532 1N916 JANTX general electric 1n4727 1N4148.1N4448 1N4148 1N4151
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES P a rt N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M a x. (ri A ) @ V r (V) V f (V ) M a x. @ I f (m A ) Co @ DV (pf) 1N914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N914B 100 25 20 1.00 100 1N916 100 25 20

Zener diode smd marking code S3

Abstract: SMD CODE MARKING s7 SOT23 Zener diode smd marking code 621 triac 214 215 216 BZX84C5V1 spice smd z70 smd diode B3 SOT23 Z3 marking Zener diode smd marking S4 SMD CODE PACKAGE SOT23 486
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 BZX84 series Voltage regulator diodes Product data sheet Supersedes data of 1999 May 18 2003 Apr 10 NXP Semiconductors Product data sheet Voltage regulator diodes BZX84 series FEATURES PINNING • Total power dissipation: max. 250 mW

LTA 703 S

Abstract: lm 704
Contextual Info: TO SH IB A TPS703,TPS704 TOSHIBA PHOTO DIODE T• P■ < w ;r 7m n 3 V g SILICON PIN Tm mP < wèêf ; 7m r^ u ri d ■ SILICON PIN PHOTO DIODE FOR REMOTE CONTROL U nit in mm VARIOUS KINDS OF REMOTE CONTROL SYSTEMS 7.0 ± 0.2 SMOKE SENSOR OPTICAL COMMUNICATION

806T

Abstract: MARKING SO8 STM690 STM704 STM795 STM802 STM804 STM805 STM806 690r
Contextual Info: STM690, STM704, STM795 STM802, STM804, STM805, STM806 3V Supervisor with Battery Switchover FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ RST OR RST OUTPUTS NVRAM SUPERVISOR FOR EXTERNAL LPSRAM CHIP-ENABLE GATING STM795 only FOR EXTERNAL LPSRAM (7ns max PROP

68HC11

Abstract: SP703 SP703CN SP704
Contextual Info: SP703/SP704 SIGNAL PROCESSING EXCELLENCE Low Power Microprocessor Supervisory with Battery Switch-Over • Precision Voltage Monitor: SP703 at 4.65V SP704 at 4.40V ■ Reset Time Delay - 200ms ■ Debounced TTL/CMOS Compatible Manual - Reset Input ■ Minimum component count

17F58

Abstract: A10000T 5SDD17F6000
Contextual Info: 5SDD 17F6000 5SDD 17F6000 Old part no. DV 818-1700-60 High Voltage Diode Properties § Low forward voltage drop § Low recovery charge § High operating temperature § Low leakage current Key Parameters = 6 000 V RRM = 1 704 I FAVm = 19 000 I FSM = 0.894 V TO

A10000T

Contextual Info: 5SDD 17F6000 5SDD 17F6000 Old part no. DV 818-1700-60 High Voltage Diode Properties Key Parameters V RRM = 6 000 I FAVm = 1 704 I FSM = 19 000 V TO = 0.894 rT = 0.344 Low forward voltage drop Low recovery charge High operating temperature Low leakage current

mmic distributed amplifier

Abstract: 84-1LMI NDA-210-D
Contextual Info: GaInP/GaAs HBT MMIC Distributed Amplifier NDA-210-D DC-17 GHz 6000045 Rev. A 1 Features Applications • • • • • • • • Reliable low-cost HBT-based design 6 dB Gain, +12.6 dBm P1dB @ 2 GHz High P1dB of +13.4 dBm at 6.0 GHz and +8.5 dBm at 14.0 GHz

RCC1010

Abstract: 84-1LMI NDA-312 RF Nitro Communications Ablebond 190
Contextual Info: GaInP/GaAs HBT MMIC Distributed Amplifier NDA-312 DC-15 GHz 6000049 Rev. 1 Features • • • 1 • • • Reliable low-cost HBT-based design 9 dB Gain, +14.8 dBm P1dB @ 2 GHz High P1dB of +15.0 dBm at 6.0 GHz and +9.4 dBm at 14.0 GHz Distributed amplifier with fixed gain or Adjustable

ML-00039

Abstract: 532 nm laser diode 00024 C 704 diode ML-SERIES
Contextual Info: 1201 Continental Blvd. Charlotte, NC 28273 Phone: 704 588-2340 Fax: (704) 588-2516 Web: ML-Series Microlaser Devices Standard Microlaser ML-00005 – Standard 1064 nm Microlaser Enhanced Microlaser Devices ML-00024 – Standard 532 nm Microlaser ML-00039 – MegachipTM 532 nm

Ablestik

Abstract: 140.06 84-1LMI NDA-410-D 6000053 10420
Contextual Info: GaInP/GaAs HBT MMIC Distributed Amplifier NDA-410-D DC-11 GHz 6000053 Rev. A 1 Features Applications • • • • • • • Reliable low-cost HBT-based design 12 dB Gain, +14.6 dBm P1dB @ 2 GHz High P1dB of +14.5 dBm at 6.0 GHz and +10.8 dBm at 14.0 GHz

NDA-310-D

Abstract: 84-1LMI Ablebond 190
Contextual Info: GaInP/GaAs HBT MMIC Distributed Amplifier NDA-310-D DC-15 GHz 6000048 Rev. A 1 Features Applications • • • • • • • Reliable low-cost HBT-based design 9 dB Gain, +14.8 dBm P1dB @ 2 GHz High P1dB of +15.0 dBm at 6.0 GHz and +9.4 dBm at 14.0 GHz

northrop

Abstract: 704 Diode
Contextual Info: 1201 Continental Blvd. Charlotte, NC 28273 Phone: 704 588-2340 Fax: (704) 588-2516 Web: www.polysci.com ML-Series Microlaser Devices Standard Microlaser ML-00005 – Standard 1064 nm Microlaser Enhanced Microlaser Devices ML-00024 – Standard 532 nm Microlaser

RCC1010

Abstract: C 704 diode mmic distributed amplifier 84-1LMI NDA-212
Contextual Info: GaInP/GaAs HBT MMIC Distributed Amplifier NDA-212 DC-17 GHz 6000046 Rev. 1 1 Features Applications • • • • • • • • Reliable low-cost HBT-based design 6 dB Gain, +12.6 dBm P1dB @ 2 GHz High P1dB of +13.4 dBm at 6.0 GHz and +8.5 dBm at 14.0 GHz

Contextual Info: SRDA70-4 RailClampÒ Low Capacitance TVS Diode Array PROTECTION PRODUCTS Description Features u Transient protection for high speed data lines to RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The SRDA70-4 has been specifically designed to protect sensitive components which are connected to data and transmission

RCC1010

Abstract: mmic distributed amplifier 84-1LMI NDA-310-D NDA-320-D NDA-410-D ablebond 293
Contextual Info: GaInP/GaAs HBT MMIC Distributed Amplifier NDA-320-D DC-15 GHz 6000051 Rev. 1 1 Features Applications • • • • • • • Reliable Low-Cost HBT Design 9 dB Gain High P1dB Distributed amplifier with fixed gain or Automatic Gain Control AGC operation

DIODO 1N4148

Abstract: diodo 1N914 1N4532 2 935 diodo in4727 1N4727 1N4148 1N4149 DZ806 1N4152
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part Number 1N 914 1N 914A 1N 9 1 4 B BV @ 100/1A Min. V I r @ 25°C Max. (ri A) @ V r (V) V f Max. (V) @ I f (m A) Co @ DV (pf) trr (77S E C ) Package Outline Package Outline Num ber 100 100 25 30 1.00 10 4 25 20 1.00

diodes ir10

Abstract: ir10 diode MicroMetrics SCHOTTKY DIODES ir10 Logic Gates "Schottky Diodes" MGR700
Contextual Info: Schottky Diodes Schottky Diodes: MGR 700 Series General Purpose Schottky Diodes Description The MicroMetrics MGR 700 series are general purpose Schottky Barrier diodes specially designed to achieve a high voltage breakdown. This series of diodes can be used in the UHF and