C 38 MARKING CODE TRANSISTOR Search Results

BCP52-16

Abstract: BFN38 BFN39 E6327 VPS05163
Contextual Info: BFN38 NPN Silicon High-Voltage Transistors • Suitable for video output stages in TV sets and 4 switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage 3 • Complementary type: BFN39 PNP 2 1 Type Marking BFN38 BFN 38

Contextual Info: BFN38 NPN Silicon High-Voltage Transistors • Suitable for video output stages TV sets 4 and switching power supplies 3 2 • High breakdown voltage 1 • Low collector-emitter saturation voltage • Complementary type: BFN39 PNP • Pb-free (RoHS compliant) package

Contextual Info: BFN38 NPN Silicon High-Voltage Transistors • Suitable for video output stages TV sets and switching power supplies 4 3 2 • High breakdown voltage 1 • Low collector-emitter saturation voltage • Complementary type: BFN39 PNP Type BFN38 Marking BFN38 1=B

J-STD-020D

Contextual Info: DPLS325E LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 70mΩ at 3A

Contextual Info: DPLS325E LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR N EW PRODU CT Features • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 70mΩ at 3A High DC Current Gain hFE > 200 at IC = 2A Complementary NPN Type Available (DNLS320E)

BCP52-16

Abstract: BFN38 BFN39
Contextual Info: BFN38 NPN Silicon High-Voltage Transistors • Suitable for video output stages TV sets 4 and switching power supplies 3 2 • High breakdown voltage 1 • Low collector-emitter saturation voltage • Complementary type: BFN39 PNP • Pb-free (RoHS compliant) package 1)

Contextual Info: Not recommended for new design. Alternative is FZT789A DPLS325E LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR Features N •        Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 70m at 3A High DC Current Gain hFE > 200 at IC = 2A

10 amp npn power transistors

Abstract: pnp 200v Central Electronic Central Semiconductor datasheets 140v NPN CTLT853-M833 CTLT953-M833 TLM833
Contextual Info: PRODUCT announcement Low VCE SAT Power Transistors in a Tiny Leadless Module CTLT853-M833 6 Amp/200V (NPN) CTLT953-M833 5 Amp/140V (PNP) TLM833 Sample Devices features available • High Voltage (200V NPN, 140V PNP) upon request. • High Current (IC = 6.0A NPN, 5.0A PNP)

Q62702-F1246

Abstract: Q62702-F1303
Contextual Info: NPN Silicon High-Voltage Transistors BFN 36 BFN 38 Suitable for video output stages in TV sets and switching power supplies ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: BFN 37, BFN 39 PNP ● Type Marking

C 38 marking code transistor

Abstract: CZT853 417 TRANSISTOR
Contextual Info: RY A IN IM EL PR Central CZT853 TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT853 type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

MARKING npn TRANSISTOR 1k sot223

Abstract: 417 TRANSISTOR transistor 417 C 38 marking code transistor CZT853 CZT953
Contextual Info: Central CZT853 TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT853 type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

PNP TRANSISTOR "SOT89" marking pr

Abstract: CXT853 sot-89 marking code CXT953 sot-89 marking 22 sot-89 marking code pr TRANSISTOR marking ar code
Contextual Info: RY A IN IM EL PR Central CXT853 TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT853 type is a high current, high voltage silicon NPN transistor. Packaged in the SOT-89 surface mount case, the

Contextual Info: DMN3210 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR UNDER DEVELOPMENT Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed SOT-23 A D B C G TOP VIEW S

N3C SOT

Contextual Info: SIEMENS NPN Silicon High-Voltage Transistors BFN 36 BFN 38 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN 37, BFN 39 PNP Type

TRANSISTOR BC 545

Abstract: 23N40
Contextual Info: DMN3410 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed BC G TOP VIEW Mechanical Data · ·

Contextual Info: DMN3210 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed SOT-23 A D B C G TOP VIEW S Mechanical Data

DMN3210

Abstract: J-STD-020A
Contextual Info: DMN3210 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODELS: DMN3210 Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed SOT-23 A D B

TRANSISTOR BC 208

Abstract: DMN3410 J-STD-020A marking xy
Contextual Info: DMN3410 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODELS: DMN3410 Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed BC G TOP VIEW

Contextual Info: SIEMENS NPN Silicon High-Voltage Transistors BFN 36 BFN 38 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN 37, BFN 39 PNP Type

TRANSISTOR BC 545

Abstract: 25C03
Contextual Info: DMN3410 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed BC G TOP VIEW Mechanical Data · ·

Contextual Info: DMN3210 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed SOT-23 A D B C G TOP VIEW S Mechanical Data

PD0026

Abstract: transistor C 4429 equivalent AO4429 AO4429L PD-002 aos Lot Code Week
Contextual Info: AO4429 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4429 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard

C 38 marking code transistor

Abstract: CTLT853-M833 CTLT953-M833 TLM833
Contextual Info: CTLT853-M833 SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR TM TINY LEADLESS MODULE Top View Bottom View TLM833 CASE MARKING CODE: CHA3 PNP COMPLEMENT: CTLT953-M833 MAXIMUM RATINGS: TA=25°C Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLT853-M833 is a high

transistor marking code mp1 SOT-23

Abstract: DMP2130LDM J-STD-020A DMP2130L
Contextual Info: DMP2130LDM P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT • • • • • Mechanical Data • • • • Low RDS ON : • 80 mΩ @VGS = -4.5V • 110 mΩ @VGS = -2.7V • 130 mΩ @VGS = -2.5V Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 3)