C 331 TRANSISTOR Search Results

S321RDB

Abstract: s 316 hwb S321HWB S315GWA 7 segment cc S511GWA infra red 11 pin 7 segment LED pin configuration s322 10NOPIN
Contextual Info: EVERLIGHT ELECTRONICS • BM D 3 M 15703 I ■ INFRA RED/SUPER-INFRARED LEDS J / - ^ j 00G D 002 3 ■ EVEC LED INDICATOR LAMPS 1 SILICON PIN PHOTODIODES PHOTO TRANSISTORS | 50 30 G IB f Jjîl jjfty “ ■ fl t 3 PT 331 C PT 202 C 7 - SEGMENT DIGIT DISPLAYS

philips bfq

Abstract: BFQ263 BFQ263A RK 100
Contextual Info: Product specification Philips S em iconductors - r & 3 ~ DESCRIPTION > 5 BFQ263; BFQ263A NPN 1 GHz video transistors • 5bE D PHILIPS IN TE RNATIONAL c 711062t. 0045b4û 331 « P H I N PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with

VE880

Abstract: LE88311 sumida c8100 MBT3946DW1T1LRG LE88311DLC IIR NEON le88331 MURS120DICT-ND VE880 "pin compatible" rft rg1
Contextual Info: A D V A N C E D C O P Y Le88311/331 Dual Channel Tracking Battery VoicePort™ Device VE880 Series APPLICATIONS „ „ „ „ „ ORDERING INFORMATION Voice enabled Cable and DSL Modems Voice over IP/ATM - Integrated Access Devices IAD Residential VoIP Gateways and Routers

lt 332 diode

Abstract: 4242 DM 4243 dm IRFF330 IRFF331 IRFF332 IRFF333 diode 331 t2235 QA-750
Contextual Info: 1 &£ D SILICONIX INC • Ö 2 5 4 7 3 5 GDlMflEl b ■ IRFF330/331/332/333 C T 'S ilico n ix Jm W incorporated N-Channel Enhancement Mode Transistors T TCJ-205AF - ^ - o q . BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR|DSS IRFF330 400 1.0 3.5 IRFF331 350

BC369

Abstract: TRANSISTOR bH Silicon Epitaxial Planar Transistor philips
Contextual Info: I 1 N AUER P H I L I P S / D I S C R E T E L I E J> ^53*331 D027S43 152 H A P X BC369 I SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic TO -92 envelope, intended for low-voltage, high-current LF applications. BC 368/B C 369 is the matched complementary pair suitable for class-B output stages up to 3 W.

S25610

Abstract: Pulse Dialing in rotary phones S2560G S2560A
Contextual Info: •> GOULD A M I S e m ic o n d u c to rs S25610 □ Independent Select Inputs for Variation of Dialing Rates 10pps/20pps , Mark/Space Ratio (331/3 -662/31 40-60), Interdigit Pause (400ms/800ms). Features □ Complete Pin Compatibility With S2560A and S2560G Pulse Dialer Allowing Easy Upgrading of

TM4C1230E6PM

Abstract: RTCC active smd semiconductor components marking codes 2014
Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1230E6PM Microcontroller identical to LM4F111E5QR D ATA SH E E T D S -T M 4C 1230 E 6 P M - 1 4 6 0 2 . 2 6 4 8 S P M S 331 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1230E6PM Microcontroller identical to LM4F111E5QR D ATA SH E E T D S -T M 4C 1230 E 6 P M - 1 4 6 0 2 . 2 6 4 8 S P M S 331 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright

sdt9303

Abstract: 2n3441 2N3441 JAN 2N3772 SOLITRON
Contextual Info: S0LITR0NDEVICES INC 8 3 6 8 6 0 2 SOL ITRON D E V I C E S DEI fl3bflL,D2 00057ÖBS i» INC 95D 02 78 2 T ' 3 3 - o / 3 P 1 is [^ [D y Tr ©Æ\TFÆ\[L@ J fw ’MDevices, trm Inc. SINGLE DIFFUSED l\IPI\l M E S A TRANSISTORS © ¿mw> M\PM DEVICE TYPE hpE @

C 331 Transistor

Abstract: transistor 331 331 transistor transistor C 331 y 331 Transistor transistor 331 8 of ic 331 transistor 331 p g060 NPN/transistor C 331
Contextual Info: LINEAR INTEGRATED CIRCUIT TBA 331 GENERAL PURPOSE The TBA 331 is an assembly of 5 silicon NPN transistors on a common monolithic substrate In a Jedec TO-116 14-lead dual in-line plastic package. Two transistors are internally connected to form a differential amplifier.

DF 331 TRANSISTOR

Abstract: transistor df 331
Contextual Info: SIEMENS BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type l/bs b f l DS on Package Ordering Code BUZ 331 500 V 8A 0.8 n TO-218 AA C67078-S3114-A2 Maxim um Ratings Parameter Symbol Continuous drain current b Values

transistor B A O 331

Abstract: D F 331 TRANSISTOR
Contextual Info: SIEMENS BUZ 331 SIPMOS Power Transistor Type BUZ 331 CO i • N channel • Enhancement mode • Avalanche rated 500 V Id Tc ^DS on Package 1> Ordering Code 8.0 A 35 ’C 0.8 Q TO-218 AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current

DF 331 TRANSISTOR

Abstract: D F 331 TRANSISTOR transistor d 331 transistor df 331 C 331 Transistor
Contextual Info: SIEMENS BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 331 l/bs 500 V fa 8A ^%S on 0 .8 » Package Ordering Code TO-218AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values

EA-PS 7032-200

Abstract: EA-PS 7016-400 EA-PS 7016-100 71500-04 7032-200 EA-PS 7032 digital Amperemeter ttl 7032 .7032-200 serie 7000 EA
Contextual Info: LABOR-NETZGERÄTE SERIE 7000 EA-PS 7016-200 LCD q q q q q q q q q q q q q q Systemanwendungen Unterrichtsräume und Laboratorien Transistor-Linearregler mit Thyristor-Vorregler Ausgangsleistung 80W, 160W, 320W, 640W Ausgangssp. 0.16V, 0.32V, 0.65V und 0.150V

12S10

Abstract: C67078-S3114-A2 331 transistor
Contextual Info: BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 331 500 V 8A 0.8 Ω TO-218 AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current

IRF3303

Abstract: OA 161 diode IRFF330 IRFF331 IRFF332 IRFF333
Contextual Info: - Standard Power MOSFETs File Number IRFF330, IRFF331, IRFF332, IRFF333 1893 N-Channel Enhancement-Mode Power Field-Effect Transistors 3.0A and 3.5A, 350V - 400V rD S o n = 1.00 and 1.50 N-CHANNEL ENHANCEMENT MODE Features: •

XC6901D331MR-G

Abstract: XC6901D301MR-G XC6901D501MR-G XC6901D XC6901D251ER-G XC6901D301ER-G ta1628 XC6901D251MR-G XC6901 03VVOUT2
Contextual Info: XC6901 Series ETR03043-006 200mA Negative Voltage Regulator with ON/OFF Control •GENERAL DESCRIPTION The XC6901 Series is a negative voltage CMOS regulator which includes a reference voltage source, error amplifier, driver transistor, current limiter and phase compensator.

2N3773 equivalent

Abstract: transistor c113 c113 transistor c112 TRANSISTOR d 331 TRANSISTOR equivalent transistor B A O 331 2N6262 2N6262 transistor 331 al jan2n3772
Contextual Info: pia E>iy <mr /a u m ® C o n tr a n Devices. Inc MEDIUM VOLTAGE CHIP NUMBER NPN SINGLE DIFFUSED M ESA TRANSISTOR FORMERLY 31) CONTACT METALLIZATION Base. Emitter and Collector Solder Coated 95/5% lead/tin. ASSEM BLY RECOMMENDATIONS It is advisable that:

p331

Abstract: SGSP130
Contextual Info: S G S-THOMSON 07E D | 7 ^ 2 3 7 0Dl7fl07 b | _ 73C 1 7 3 0 4 _ O j T Z J - O y _ _ ê f. V ñ K W% i I 1 • SGSP13Ò/P13Ì/P132 ;] SGSP230/P231/P232 .4 SGSP330/P331/P332 - 1 N-CHÀNNEL POWER MOS TRANSISTORS & HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate

332MCP

Abstract: NTE307 27MHz rf transmitter NTE332 T0202 NTE297 NTE300 T072 T092 297MP
Contextual Info: Bt-POLAR TRANSISTORS NTE Type Number Polarity and Material 297MP NPN-Si 298 PNP-Si Description and Application Matched Pair of NTE297 : » Audio Amp, Driver Compì to NTE297 Collector to Base (Volts) Collector to Emitter (Volts) Emitter Case Style Diag.

J659

Abstract: ultrarf UPB1925B 332TM J162 J328
Contextual Info: URFDB Sec 03_1925B 11/3/99 10:24 AM Page 3-26 UPB1925B 25W, 1.9GHz, 24V Broadband RF Power NPN Bipolar Transistor Description This device is designed for base station applications up to frequencies of 1.9GHz. Rated with a minimum output power of 25W, it is ideal for CDMA, TDMA, GSM, FM,

partmarking 6 C

Abstract: PARTMARKING at sot223 ZDT619
Contextual Info: SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT619 ISSUE 1 - NOVEMBER 1995 ZDT619 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – T619 ABSOLUTE MAXIMUM RATINGS. PARAMETER

transistor 331 p

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TPM401 The RF Line UHF Power Transistor . . . desig ned a s an N P N gold m etallized tran sisto r using d iffused em itter b allast resisto rs for op eration in C la s s A , B or C co n dition s. Th e high g ain red uces the need for co m p lex broadband circ u its and is id ea lly suited

d331 npn transistor

Abstract: D331 PNP D331 transistor SICK WS 150 D132 transistor D331 datasheet D330 NPN transistor SICK WT 4-2 transistor d331 sick WL sick WL 10
Contextual Info: D A T E N B L A T T Lichtschranken Baureihe W 4-2 WS/WE 4-2 4m WL 4-2 2,8 m WT 4-2 4 . 130 mm Komplette Lichtschrankenbaureihe in glasfaserverstärktem Kunststoffgehäuse. Einweglichtschranke mit 4 m Reichweite und sichtbarem Rotlicht als Ausrichthilfe.