C 1114 TRANSISTOR Search Results

Contextual Info: Ea REFLECTIVE OBJECT SENSOR OPTOELECTRONICS QRD1113/1114 PACKAGE DIMENSIONS PIN 1 INDICATOR -.083 2.11 O P T IC A L ' C E N T E R LIN E ” -I , » - .240 p i n (6.10) .120 (3.05)- .173 (4.39) DESCRIPTION The QRD1113/1114 reflective se n so rs consist of an

ECG1114

Contextual Info: P H IL IP S E C G INC 17E bbSaiSfl DGD4QS3 3 r. T-74-05-01 - WV V . T E E ü r e E C G KÜ 3 AUDIO AMPLIFIER s e m ic o n d u c t o r s • • • • 1114 OUTPUT POWER 4.5W 14V-4 0 LOW DISTORTION LOW QUIESCENT CURRENT HIGH INPUT IMPEDANCE M E C H A N IC A L DATA

UNR1111

Abstract: UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 B 47k 1112
Contextual Info: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 For digital circuits

1117 S Transistor

Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
Contextual Info: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 6.9±0.1 Costs can be reduced through downsizing of the equipment and

C 1114 transistor

Contextual Info: FiS REFLECTIVE OBJECT SENSORS OPTOELECTRONICS QRB1113/1114 PACKAGE DIMENSIONS .4 2 0 1 0 .6 7 -J -4 - DESCRIPTIO N Th e QRB1113/1114 consists of an infrared emitting diode -.3 2 8 (8 .3 3 ) a and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.

Contextual Info: I REFLECTIVE OBJECT SENSOR OPTOELECTRONICS QRD1113/1114 P PACKAGE DIMENSIONS DESCRIPT The QRD1113/1114 reflective sensors consist of an infrared emitting diode and an NPN silicon phototransistor mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the

MA42120

Contextual Info: Silicon Low Noise Bipolar Transistors MA42120 Series Description Nominal fT - 1.5 GHz Nominal Current Range - .4 to 3 mA Iq Max. - 80 mA Frequency = 100 to 600 MHz Geometry = 70 This series of NPN epitaxial silicon planar transistors is designed for 100 MHz to 1 GHz amplifiers and low power

Contextual Info: Il Silicon Low Noise Bipolar Transistors P • 5bM551M 0 D 0 m 55 7 H MIC n/A-con seuiconDtBRLNûton MA42120 Series Description 7% 3 / v ^ Nominal fT - 1.5 GHz Nominal Current Range - .4 to 3 mA Iq Max. - 80 mA Frequency - 100 to 600 MHz Geometry - 70 This series of NPN epitaxial silicon planar transistors is

T-43-25

Contextual Info: GEC PLESSEY SEMICONDS 43E D MM 37bôS22 D O I B ^ Û 3 BIPL SB " T '4 3 >-Z<5 GEC PLESSEY S E M I C O N D U C T O R S SL2363 & SL2364 VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2363C and SL2364C are arrays of transistors internally connected to torm a dual long-tailed pair with tail

UM3512-01C

Abstract: UM3512-01R UM3512 transistor organ f4 sl 512-note 32653 16 ohm 0.25w SPEAKER piano keyboard
Contextual Info: UM3512 Series Melody Organ 1C Features • ■ ■ ■ ■ ■ ■ ■ generate system clock ■ One key, one song with auto-stop Junction, or stop by pressing “ RESET ■ key ■ Play all the songs continuously with auto-stop function 1st,2nd . ,15th,stop , or stop by pressing

C2023 transistor

Abstract: c2023 transistor c 2316 transistor c2023 K C2023
Contextual Info: mm jm m R F P r o d u c ts M ic m m s e m i 140 Commerce Drive Montgomeryvilie, PA 18936-1013 Tel: 215 631-9840 T C C 20 23-16 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS • FREQUENCY £.0 2.3GHz «PO W ER OUT 16.0W » POWER GAIN

SD1887

Abstract: transistor 2Fn M147 TCC2023-16
Contextual Info: H M «-» J IV II C r O S e m i Progress Powered by Technology 140 Commerce Drive M ontgom eryville, PA 1 8936-1013. Tel: 215 631-9840 T C C 20 2 3 -1 6 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS FREQUENCY 2.0-2.3GHz POWER OUT 16.0W

tn0201t

Abstract: 38212 3-8212
Contextual Info: Tem ic TN0201T N-Channel Enhancement-Mode MOS Transistor Product Summary rDS<on M ax Q) V(br )dss M in (V) 1.0@ V GS = 10 V 20 1.4 @ VGS = 4.5 V VgS(Ui) (V) I d (A) 1.0 to 3.0 0.3 Features Benefits Applications

transistor bI 240

Abstract: QRB1113 qrb1114 D transistor sEC transistor 373
Contextual Info: E9 REFLECTIVE OBJECT SENSORS Mw— OPTOELECTRONICS QRB1113/1114 DESCRIPTION PACKAGE DIMENSIONS The Q RB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.

Power logic 8-bit shift register

Contextual Info: TPIC6C595 POWER LOGIC 8-BIT SHIFT REGISTER SLISQ61 - JULY 1998 Low rDS on . . . 7 ^ Typ D OR N PACKAGE (TOP VIEW) Avalanche Energy . . . 30 m j Eight Power DMOS Transistor Outputs of 100-mA Continuous Current 250-mA Current Limit Capability VCC [ 1 SER IN [ 2

buz 385

Abstract: buz385 4900 SIEMENS
Contextual Info: SIEMENS BUZ 385 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Type BUZ 385 Vos 500V b 9A RdSion 0.8 n Package Ordering Code TO-218AA C67078-A3210-A2 Maximum Ratings Parameter Symbol Drain source voltage Vds V DGR Drain-gate voltage

Contextual Info: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts

YTF531

Abstract: th204
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOS i i YTF531 HIGH S P E E D , H I G H CURRENT SW ITCHIN G A P P L I C A T I O N S . IN D USTRIAL A P P LIC A TIO N S CHO PPER R E G U L A T O R , D C - O C C ON VER TER ANO HOTOR U n it DR IVE A P P L I C A T I O N S .

mp20 transistor

Abstract: M54965 SP5020T
Contextual Info: GEC PLESSEY [ s e m i c o n d u c t o r s ! PRELIM IN ARY IN FO R M A TIO N 2 2 7 9 -1 .6 SP5020 1.3GHz 3-WIRE BUS CONTROLLED SYNTHESISER The SP5020, when used with a TV varicap tuner, forms a com plete phase locked loop tuning system. The circu it consists of a divide-by-8 prescaler with its own preamplifier

Contextual Info: MMPQ3906 Preferred Device Quad Amplifier/Switch Transistor PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Collector −Emitter Voltage Symbol Value Unit VCEO −40 Vdc VCB −40 Vdc VEB −5.0 Vdc −200 mAdc Collector −Base Voltage Emitter −Base Voltage

D40K2

Abstract: D40KI transistor darlington 800V 10A D40K1 D40K shoulder WASHER tab ic D40K3 D41K
Contextual Info: Silicon Power Tab Monolithic Transistor Very High Gain Darlington Amplifier Q i s i D4ÖK “Color Molded" NPIM Complement To D41K hpE Min. — 10,000 1.67 Watt Free-Air Power Dissipation T Y P IC A L A PPLIC A TIO N S: A udio O utput D river R elay S u b stitu te

CD4518B

Abstract: CD4518BMS CD4520B CD4520BMS
Contextual Info: CD4518BMS, CD4520BMS CMOS Dual Up Counters December 1992 Features Pinout • High Voltage Types 20V Rating CD4518BMS, CD4520BMS TOP VIEW • CD4518BMS Dual BCD Up Counter • CD4520BMS Dual Binary Up Counter • Medium Speed Operation - 6MHz Typical Clock Frequency at 10V

ic CD4071

Abstract: CD4520BMS CD4518B CD4518BMS CD4520B IOH15
Contextual Info: CD4518BMS, CD4520BMS CMOS Dual Up Counters December 1992 Features Pinout • High Voltage Types 20V Rating CD4518BMS, CD4520BMS TOP VIEW • CD4518BMS Dual BCD Up Counter • CD4520BMS Dual Binary Up Counter • Medium Speed Operation - 6MHz Typical Clock Frequency

KIY transistor

Abstract: 2sc2635 2SC2607 KIY transistors TBB 324 2sc2592 138B 2SA1103 2SC2590 2SC2591
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English