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    C 1114 TRANSISTOR Search Results

    C 1114 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-2
    Rochester Electronics LLC Avionics LDMOS transistor PDF Buy
    RX1214B300YI
    Rochester Electronics LLC RX1214B300Y - Microwave Power Transistor PDF Buy
    CA3127MZ
    Rochester Electronics LLC CA3127 - Transistor Array PDF Buy
    RX1214B130YI
    Rochester Electronics LLC NPN microwave power transistor PDF Buy
    MX0912B251Y
    Rochester Electronics LLC NPN microwave power transistor PDF Buy

    C 1114 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Ea REFLECTIVE OBJECT SENSOR OPTOELECTRONICS QRD1113/1114 PACKAGE DIMENSIONS PIN 1 INDICATOR -.083 2.11 O P T IC A L ' C E N T E R LIN E ” -I , » - .240 p i n (6.10) .120 (3.05)- .173 (4.39) DESCRIPTION The QRD1113/1114 reflective se n so rs consist of an


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    QRD1113/1114 QRD1113/1114 PDF

    ECG1114

    Contextual Info: P H IL IP S E C G INC 17E bbSaiSfl DGD4QS3 3 r. T-74-05-01 - WV V . T E E ü r e E C G KÜ 3 AUDIO AMPLIFIER s e m ic o n d u c t o r s • • • • 1114 OUTPUT POWER 4.5W 14V-4 0 LOW DISTORTION LOW QUIESCENT CURRENT HIGH INPUT IMPEDANCE M E C H A N IC A L DATA


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    ECG1114 T-74-05-Ã ECG1114 14-leadquad PDF

    UNR1111

    Abstract: UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 B 47k 1112
    Contextual Info: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 For digital circuits


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    111D/111E/111F/111H/111L 111D/111E/111F/111H/111L) UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 B 47k 1112 PDF

    1117 S Transistor

    Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
    Contextual Info: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 6.9±0.1 Costs can be reduced through downsizing of the equipment and


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    111D/111E/111F/111H/111L 111D/111E/111F/111H/111L) UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 1117 S Transistor UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 PDF

    C 1114 transistor

    Contextual Info: FiS REFLECTIVE OBJECT SENSORS OPTOELECTRONICS QRB1113/1114 PACKAGE DIMENSIONS .4 2 0 1 0 .6 7 -J -4 - DESCRIPTIO N Th e QRB1113/1114 consists of an infrared emitting diode -.3 2 8 (8 .3 3 ) a and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.


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    QRB1113/1114 QRB1113/1114 000b33b C 1114 transistor PDF

    Contextual Info: I REFLECTIVE OBJECT SENSOR OPTOELECTRONICS QRD1113/1114 P PACKAGE DIMENSIONS DESCRIPT The QRD1113/1114 reflective sensors consist of an infrared emitting diode and an NPN silicon phototransistor mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the


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    QRD1113/1114 QRD1113/1114 QRD1113/1114. PDF

    MA42120

    Contextual Info: Silicon Low Noise Bipolar Transistors MA42120 Series Description Nominal fT - 1.5 GHz Nominal Current Range - .4 to 3 mA Iq Max. - 80 mA Frequency = 100 to 600 MHz Geometry = 70 This series of NPN epitaxial silicon planar transistors is designed for 100 MHz to 1 GHz amplifiers and low power


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    MA42120 MA42122 MA42123 MA42121 MA42123 MIL-STD-750 PDF

    Contextual Info: Il Silicon Low Noise Bipolar Transistors P • 5bM551M 0 D 0 m 55 7 H MIC n/A-con seuiconDtBRLNûton MA42120 Series Description 7% 3 / v ^ Nominal fT - 1.5 GHz Nominal Current Range - .4 to 3 mA Iq Max. - 80 mA Frequency - 100 to 600 MHz Geometry - 70 This series of NPN epitaxial silicon planar transistors is


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    5bM551M MA42120 MA42122 MA42123 MA42121 MIL-STD-750 PDF

    T-43-25

    Contextual Info: GEC PLESSEY SEMICONDS 43E D MM 37bôS22 D O I B ^ Û 3 BIPL SB " T '4 3 >-Z<5 GEC PLESSEY S E M I C O N D U C T O R S SL2363 & SL2364 VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2363C and SL2364C are arrays of transistors internally connected to torm a dual long-tailed pair with tail


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    SL2363 SL2364 SL2363C SL2364C 37bflS2S T-43-25 200mW SL2364 T-43-25 PDF

    UM3512-01C

    Abstract: UM3512-01R UM3512 transistor organ f4 sl 512-note 32653 16 ohm 0.25w SPEAKER piano keyboard
    Contextual Info: UM3512 Series Melody Organ 1C Features • ■ ■ ■ ■ ■ ■ ■ generate system clock ■ One key, one song with auto-stop Junction, or stop by pressing “ RESET ■ key ■ Play all the songs continuously with auto-stop function 1st,2nd . ,15th,stop , or stop by pressing


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    UM3512 47-note 512-note UM3512-01C UM3512-01R UM3512H 20LDIP transistor organ f4 sl 32653 16 ohm 0.25w SPEAKER piano keyboard PDF

    C2023 transistor

    Abstract: c2023 transistor c 2316 transistor c2023 K C2023
    Contextual Info: mm jm m R F P r o d u c ts M ic m m s e m i 140 Commerce Drive Montgomeryvilie, PA 18936-1013 Tel: 215 631-9840 T C C 20 23-16 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS • FREQUENCY £.0 2.3GHz «PO W ER OUT 16.0W » POWER GAIN


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    SD1S87 TCC2023-16 10OpF C2023-16 390ftM C2023 transistor c2023 transistor c 2316 transistor c2023 K C2023 PDF

    SD1887

    Abstract: transistor 2Fn M147 TCC2023-16
    Contextual Info: H M «-» J IV II C r O S e m i Progress Powered by Technology 140 Commerce Drive M ontgom eryville, PA 1 8936-1013. Tel: 215 631-9840 T C C 20 2 3 -1 6 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS FREQUENCY 2.0-2.3GHz POWER OUT 16.0W


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    TCC2023-1 SD1887 TCC2023 S88TCC2023-16-0' TCC2023-16 transistor 2Fn M147 TCC2023-16 PDF

    tn0201t

    Abstract: 38212 3-8212
    Contextual Info: Tem ic TN0201T N-Channel Enhancement-Mode MOS Transistor Product Summary rDS<on M ax Q) V(br )dss M in (V) 1.0@ V GS = 10 V 20 1.4 @ VGS = 4.5 V VgS(Ui) (V) I d (A) 1.0 to 3.0 0.3 Features Benefits Applications


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    TN0201T TN020esistance P-38212--Rev. TN0201T_ tn0201t 38212 3-8212 PDF

    transistor bI 240

    Abstract: QRB1113 qrb1114 D transistor sEC transistor 373
    Contextual Info: E9 REFLECTIVE OBJECT SENSORS Mw— OPTOELECTRONICS QRB1113/1114 DESCRIPTION PACKAGE DIMENSIONS The Q RB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.


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    QRB1113/1114 QRB1113/1114 ST2179nt QRB1113 QRB1114 transistor bI 240 D transistor sEC transistor 373 PDF

    Power logic 8-bit shift register

    Contextual Info: TPIC6C595 POWER LOGIC 8-BIT SHIFT REGISTER SLISQ61 - JULY 1998 Low rDS on . . . 7 ^ Typ D OR N PACKAGE (TOP VIEW) Avalanche Energy . . . 30 m j Eight Power DMOS Transistor Outputs of 100-mA Continuous Current 250-mA Current Limit Capability VCC [ 1 SER IN [ 2


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    TPIC6C595 SLISQ61 100-mA 250-mA Power logic 8-bit shift register PDF

    buz 385

    Abstract: buz385 4900 SIEMENS
    Contextual Info: SIEMENS BUZ 385 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Type BUZ 385 Vos 500V b 9A RdSion 0.8 n Package Ordering Code TO-218AA C67078-A3210-A2 Maximum Ratings Parameter Symbol Drain source voltage Vds V DGR Drain-gate voltage


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    O-218AA C67078-A3210-A2 O-218 buz 385 buz385 4900 SIEMENS PDF

    Contextual Info: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts


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    UNR111x UN111x UNR1110 UNR1111 UNR1112 PDF

    YTF531

    Abstract: th204
    Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOS i i YTF531 HIGH S P E E D , H I G H CURRENT SW ITCHIN G A P P L I C A T I O N S . IN D USTRIAL A P P LIC A TIO N S CHO PPER R E G U L A T O R , D C - O C C ON VER TER ANO HOTOR U n it DR IVE A P P L I C A T I O N S .


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    YTF531 250/iA tw-10tfs YTF531 th204 PDF

    mp20 transistor

    Abstract: M54965 SP5020T
    Contextual Info: GEC PLESSEY [ s e m i c o n d u c t o r s ! PRELIM IN ARY IN FO R M A TIO N 2 2 7 9 -1 .6 SP5020 1.3GHz 3-WIRE BUS CONTROLLED SYNTHESISER The SP5020, when used with a TV varicap tuner, forms a com plete phase locked loop tuning system. The circu it consists of a divide-by-8 prescaler with its own preamplifier


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    SP5020 SP5020, 15-bit 8125kHz 90625kHz SP5020 mp20 transistor M54965 SP5020T PDF

    Contextual Info: MMPQ3906 Preferred Device Quad Amplifier/Switch Transistor PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Collector −Emitter Voltage Symbol Value Unit VCEO −40 Vdc VCB −40 Vdc VEB −5.0 Vdc −200 mAdc Collector −Base Voltage Emitter −Base Voltage


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    MMPQ3906 PDF

    D40K2

    Abstract: D40KI transistor darlington 800V 10A D40K1 D40K shoulder WASHER tab ic D40K3 D41K
    Contextual Info: Silicon Power Tab Monolithic Transistor Very High Gain Darlington Amplifier Q i s i D4ÖK “Color Molded" NPIM Complement To D41K hpE Min. — 10,000 1.67 Watt Free-Air Power Dissipation T Y P IC A L A PPLIC A TIO N S: A udio O utput D river R elay S u b stitu te


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    D40K1 D40K2 I38B8I89PII D40KI transistor darlington 800V 10A D40K shoulder WASHER tab ic D40K3 D41K PDF

    CD4518B

    Abstract: CD4518BMS CD4520B CD4520BMS
    Contextual Info: CD4518BMS, CD4520BMS CMOS Dual Up Counters December 1992 Features Pinout • High Voltage Types 20V Rating CD4518BMS, CD4520BMS TOP VIEW • CD4518BMS Dual BCD Up Counter • CD4520BMS Dual Binary Up Counter • Medium Speed Operation - 6MHz Typical Clock Frequency at 10V


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    CD4518BMS, CD4520BMS CD4518BMS CD4520BMS 100nA CD4518B CD4520B PDF

    ic CD4071

    Abstract: CD4520BMS CD4518B CD4518BMS CD4520B IOH15
    Contextual Info: CD4518BMS, CD4520BMS CMOS Dual Up Counters December 1992 Features Pinout • High Voltage Types 20V Rating CD4518BMS, CD4520BMS TOP VIEW • CD4518BMS Dual BCD Up Counter • CD4520BMS Dual Binary Up Counter • Medium Speed Operation - 6MHz Typical Clock Frequency


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    CD4518BMS, CD4520BMS CD4518BMS CD4520BMS CD4520BMS) ic CD4071 CD4518B CD4520B IOH15 PDF

    KIY transistor

    Abstract: 2sc2635 2SC2607 KIY transistors TBB 324 2sc2592 138B 2SA1103 2SC2590 2SC2591
    Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English


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    2SC2361 2SC2632 2SC2633 2SC2635 2SC1788 KIY transistor 2SC2607 KIY transistors TBB 324 2sc2592 138B 2SA1103 2SC2590 2SC2591 PDF