TN0201T Search Results

sot-23 marking code n1

Abstract: sot23 marking code n1 marking code n1 sot23 marking code
Contextual Info: TN0201T Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY V (BR)DSS M in (V ) r DS(on) M a x ( Q ) 1.0 20 V GS(.h )(V ) I d (A ) 1.0 to 3.0 0.39 v GS= io v 1.4 0 VGS = 4.5 V BENEFITS APPLICATIONS • FEATURES L ow O n -R esista n ce : 0 .7 5 Q

A37 diode

Abstract: diode 66a TN0201T
Contextual Info: TN0201T Siliconix NĆChannel EnhancementĆMode MOS Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) 1.0 @ VGS = 10 V 20 1.4 @ VGS = 4.5 V VGS(th) (V) ID (A) 1.0 to 3.0 0.3 Features Benefits Applications D D D D D D D D D D D Direct LogicĆLevel Interface: TTL/CMOS

N1 MARKING CODE

Abstract: TN0201T
Contextual Info: TN0201T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) 20 rDS(on) Max (W) 1.0 @ VGS = 10 V 1.4 @ VGS = 4.5 V VGS(th) (V) ID (A) 1 0 to 33.0 1.0 0 39 0.39 Features Benefits Applications D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS

marking codes n1 transistors sot-23

Abstract: TN0201T VISHAY SOT LOT CODE
Contextual Info: TN0201T Vishay Siliconix N-Channel 20–V D–S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 1.0 to 3.0 0.39 1.0 @ VGS = 10 V 20 1.4 @ VGS = 4.5 V FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS

tn0201t

Abstract: 38212 3-8212
Contextual Info: Tem ic TN0201T N-Channel Enhancement-Mode MOS Transistor Product Summary rDS<on M ax Q) V(br )dss M in (V) 1.0@ V GS = 10 V 20 1.4 @ VGS = 4.5 V VgS(Ui) (V) I d (A) 1.0 to 3.0 0.3 Features Benefits Applications

tn0201t

Contextual Info: Temic TN0201T Semi conduct or s N-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS M i n (V ) 20 rDS(on) M a x ( Q ) V c a w tV ) I d (A) 1.0 to 3.0 0.39 1.0 @ V o s =10 v 1.4 @ V GS - 4 . 5 V Features Benefits Applications • • • •

52426

Abstract: siliconix transistor marking TN0201T n1 marking marking codes n1 transistors sot-23 sot23 marking code 02
Contextual Info: TN0201T Siliconix N-Ch Enhancement-Mode MOSFET Transistor PRODUCT SUMMARY V BR DSS MIN (V) 20 rDS(on) MAX (W) 1.0 @ VGS = 10 V VGS(th) (V) ID (A) 1 0 to 3.0 1.0 30 0 39 0.39 1.4 @ VGS = 4.5 V FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS

TN0201T

Contextual Info: TN0201T Vishay Siliconix N-Channel 20–V D–S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 1.0 to 3.0 0.39 1.0 @ VGS = 10 V 20 1.4 @ VGS = 4.5 V FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS

marking codes n1 transistors sot-23

Abstract: transistor marking N1 TN0201T N1 marking code
Contextual Info: TN0201T N-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS Min (V) 20 rDS(on) Max (W) 1.0 @ VGS = 10 V 1.4 @ VGS = 4.5 V VGS(th) (V) ID (A) 1 0 to 33.0 1.0 03 0.3 Features Benefits Applications D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS

TN0201T

Contextual Info: TN0201T Vishay Siliconix N-Channel 20–V D–S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 1.0 to 3.0 0.39 1.0 @ VGS = 10 V 20 1.4 @ VGS = 4.5 V FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS

bc815

Abstract: BC815-25 9600 baud rate converter
Contextual Info: TOIM3232 Vishay Telefunken Integrated Interface Circuits MEMBER IrDA FSn ULC Technology: High-performance gate array package using dual metal layer CMOS technology, featuring sub-micron channel length 0.8 (xm Description The TOIM3232 1C provides proper pulse shaping for

bc815

Abstract: bc815 transistor MAX232 for level converter ic 293D EIA232 MAX232 SO16L TFDS4000 TFDS4500 capacitor Vishay VJ 1206
Contextual Info: TOIM3232 Not for new designs Vishay Telefunken Integrated Interface Circuits ULC Technology: High-performance gate array package using dual metal layer CMOS technology, featuring sub-micron channel length 0.8 mm Description The TOIM3232 is using a crystal clock 3.6864 MHz for

2n3904 pre-amp application note

Abstract: TSH5400 14RT1 HSDL4220 NDS351N BPV22NF BPW34FA LT1319 LT1319CS RC12K
Contextual Info: LT1319 Multiple Modulation Standard Infrared Receiver OBSOLETE: FOR INFORMATION PURPOSES ONLY Contact Linear Technology for Potential Replacement U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1319 is a general purpose building block that

BC815-25

Abstract: bc815 CRCW 1n4145 Temic ulc ic 293D
Contextual Info: TOIM3232 Not for new designs Vishay Telefunken Integrated Interface Circuits ULC Technology: High-performance gate array package using dual metal layer CMOS technology, featuring sub-micron channel length 0.8 mm Description The TOIM3232 is using a crystal clock 3.6864 MHz for

71917

Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Contextual Info: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

mark 303 SOT-23

Abstract: FDV303N 303 FDV303N TN0201T FAIRCHILD SOT-223 MARK 550C SOIC-16 TN0200T Compact Technology 303 sot-23
Contextual Info: SEM ICONDUCTO R tm FDV303N Digital FET, N-Channel General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize

2n3904 pre-amp application note

Abstract: 2 pin ir led receiver HSDL4220 NDS351N BPV22NF BPW34FA LT1319 LT1319CS photodiode "interference filters" siemens infrared preamplifier
Contextual Info: LT1319 Multiple Modulation Standard Infrared Receiver U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1319 is a general purpose building block that contains all the circuitry necessary to transform modulated photodiode signals back to digital signals. The

MIC2582-JBM

Abstract: MIC2583 MIC2583R Si7892DP BZX84C18 LTC1422 MIC2582
Contextual Info: MIC2582/MIC2583 Micrel MIC2582/MIC2583 Single Channel Hot Swap Controllers Final General Description Features The MIC2582 and MIC2583 are single channel positive voltage hot swap controllers designed to allow the safe insertion of boards into live system backplanes. The MIC2582

bc815

Abstract: "Infrared TRANSCEIVER" DATASHEET bc815 transistor capacitor Vishay VJ 1206 EIA232 MAX232 SO16L TFDS4000 TFDS4500 TFDS4500 IC
Contextual Info: TOIM3232 Vishay Telefunken Integrated Interface Circuits ULC Technology: High-performance gate array package using dual metal layer CMOS technology, featuring sub-micron channel length 0.8 mm Description The TOIM3232 IC provides proper pulse shaping for

Contextual Info: MIC2582/MIC2583 Micrel MIC2582/MIC2583 Single Channel Hot Swap Controllers General Description Features The MIC2582 and MIC2583 are single channel positive voltage hot swap controllers designed to allow the safe insertion of boards into live system backplanes. The MIC2582

2n7000 complement

Abstract: VP0300L mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 equivalent AN804 Si9939DY Si9942DY Si9958DY TP0610
Contextual Info: AN804 Siliconix PĆChannel MOSFETs, the Best Choice for HighĆSide Switching Ed Oxner Circuit Applications Historically, pĆchannel FETs were not considered as useful as their nĆchannel counterparts. The higher resistivity of pĆtype silicon, resulting from its lower carrier mobility, put

Contextual Info: F A I R C H June1997 I L D SEM ICONDUCTO R PRELIMINARY tm FDV303N Digital FET, N-Channel General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize

TNO201T

Abstract: VPO610T vpo610 NSC1650 NSC16550 RS232-DB9 TEMIC PLD TFDS3000 UART16550 rs232 to db9 dongle
Contextual Info: T S TOIM3xxx TOIM3000/ 3232 Design Notes TELEFUNKEN Semiconductors 06.96 TOIM3xxx T S Table of Contents IrDA Port and Serial Port Time Multiplexing . 1 Operation Description . 1