C 1027 TRANSISTOR Search Results

2SD1409A

Contextual Info: TOSHIBA TOSHIBA TRANSISTOR IGNITER APPLICATIONS 2SD1409A 2SD1409A SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 • 03.2 ±0.2 2.7±0.2 High DC Current Gain * = 600 (Min.)

2SA1930

Abstract: 2SC5171 VQE 11E 2SA19 transistor 2SA1930
Contextual Info: 2SA1930 TOSHIBA 2 S A 1 930 TO S H IB A TRANSISTOR POWER AM PLIFIER APPLICATIO NS SILICON PNP E PITAX IAL TYPE Unit in mm DRIVER STAGE AM PLIFIER APPLICATIO NS 10 ±0.3 -5 y < High Transition Frequency : fp = 200 MHz Typ. Complementary to 2SC5171 o

sn1027

Abstract: c 1027 transistor LT1798 LT1021-5 LT1027 LT1027ACH-5 LT1027BCH-5 LT1027CCH-5 LT1027DCH-5 LTC1290
Contextual Info: LT1027 Precision 5V Reference U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO Very Low Drift: 2ppm/°C Max TC Pin Compatible with LT1021-5, REF-02, PDIP Package Output Sources 15mA, Sinks 10mA Excellent Transient Response Suitable for A-to-D Reference Inputs

1027c5

Abstract: LT1798 1027E5 LT1027BCN8-5 LT1021-5 LT1027 LT1027ACH-5 LT1027BCH-5 LT1027CCH-5 LT1027DCH-5
Contextual Info: LT1027 Precision 5V Reference U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO Very Low Drift: 2ppm/°C Max TC Pin Compatible with LT1021-5, REF-02, TO-5 and PDIP Packages Only Output Sources 15mA, Sinks 10mA Excellent Transient Response Suitable for A-to-D Reference Inputs

Contextual Info: LT1027 Precision 5V Reference U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO Very Low Drift: 2ppm/°C Max TC Pin Compatible with LT1021-5, REF-02, PDIP Package Output Sources 15mA, Sinks 10mA Excellent Transient Response Suitable for A-to-D Reference Inputs

LT1021-5

Abstract: LT1027 LT1027ACH-5 LT1027BCH-5 LT1027C LT1027M LTC1290 REF-02 1027E5
Contextual Info: LT1027 Precision 5V Reference U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ The LT 1027 is a precision reference with extra-low drift, superior accuracy, excellent line and load regulation and low output impedance at high frequency. This device is intended for use in 12- to 16-bit A-to-D and D-to-A

c 1027 transistor

Abstract: TRANSISTOR RF 1049 Power-Amplifier R1075
Contextual Info: _ W ire le s s /R F P ro d u c ts Wireless/RF Products. Product T a b le . 10-2 MAX2102 Direct-Conversion Tuner IC for Digital DBS

BD 130 Y transistor

Contextual Info: M 8Ï5U M 8 System Reset with battery back-up MM 1027, 1081 : Monolithic IC MM 1027, 1081 These ICs were developed for STATIC-RAM (S-RAM) battery back-up, and have built-in switching circuit for main power supply and battery, back-up timing circuit and battery checker.

TH3L10

Abstract: TK3L10 TH5P4 transistor d 1795 417 TRANSISTOR zener diode 1283
Contextual Info: Darlington T ra n sisto rs Darlington Transistors Bipolartransistors Part l\lo. EIAJ No. Absolute Maximum Ratings VCBO VCEO V ebo lc Ib Pt [V] [V] [V] [A] [A] [W] 100 200 100 100 200 VCEO min 2SD1022 1023 1024 1025 1026 1027 200 200 100 200 200 1349 500

Contextual Info: SIEM ENS NPN Silicon RF Transistor BFT 66 • For small-signal broadband amplifiers up to 1 GHz at collector currents up to 20 mA. £ CECC-type available: CECC 50002/255. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking

2SC5563

Contextual Info: TO SH IBA TENTATIVE 2SC5563 TOSHIBA TRANSISTOR DYNAMIC FOCUS APPLICATIONS • • SILICON NPN TRIPLE DIFFUSED TYPE 2SC5563 High Voltage : V^ e q - 1500 V Small Collector Output Capacitance : C0b = 2.0 pF Typ. iV n n = 1 00 V'l MAXIMUM RATINGS (Ta = 25°C)

transistor K75

Contextual Info: • 1,24=1027 □ O m 'ìb M 425 ■ M IT 3 M ITSUBISHI BIPOLAR DIGITAL ICs M54515P MITSUBISHI DGTL LOGIC 7-UNIT 16mA TRANSISTOR ARRAY DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M54515P, transistor array, consists o f seven NPN tran­ sistors and is connected in a common-emitter configuration.

JANHCB2N2907A

Abstract: JANHCD2N2907A 2n2907aub 215 e3 2N2907A die 2N2907A surface mount JANHCB2N2906A 2N2906A 2N2906AL 2N2906AUB
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 October 2002. INCH-POUND MIL-PRF-19500/291K 1 July 2002 SUPERSEDING MIL-PRF-19500/291J 5 August 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING,

TH3L10

Abstract: TH3L10 ic TK3L10 T7K40 T15J10 TP10K40 3J10 3L10Z 5L20 2SB1282
Contextual Info: POWER TRANSISTORS asnas? 3 EE J> — » ti Ä ± SÉ fé Absolute Maximum Ratings Vceo V ceo V ebo Type No. [V] [V] 2SD1022 T5L10 I00 100 1023 20 200 200 1024 T 8L10 I00 I00 1025 20 200 200 1026 T 15 L1 0 I00 I00 1027 20 200 200 1349 T 7K40 500 400 2SD1788

PU3114

Abstract: PU3211 PU3214 PU4114 PU4211 PU4214 PU4414 PU4511 PU4514
Contextual Info: Power Transistor Arrays PU3214, PU4214, PU4514 PU3214, PU4214, PU4514 Package Dimensions PU3214 U n it! m m Silicon NPN Epitaxial Planar Type 4 . 2m a x . 20.5max. E o Pow er Am plifier, Switching Com plem entary Pair with P U 3 1 1 4 , P U 4 1 1 4 , P U 4 41 4

QUBiC4X

Abstract: BGU7003 BFU725F
Contextual Info: NXP wideband LNA MMIC BGU7003 in SiGe:C process High-quality reception at high RF frequencies Manufactured in NXP’s latest SiGe:C process, this high-frequency RF MMIC delivers high-quality reception with extended battery life. It is a cost-effective, siliconbased alternative to GaAs devices,

2N2857

Abstract: 2N2857UB JANKCA2N2857 JANHCA2N2857 MIL-PRF-19500/343F 608C
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 8 May 2002. MIL-PRF-19500/343F 8 February 2002 SUPERSEDING MIL-PRF-19500/343E 28 November 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON,

C-48U

Abstract: 2N2666 JANTXV 2N5664 equivalent 2N5667S 2N5665
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 April 1998 INCH-POUND MIL-PRF-19500/455C 25 January 1998 SUPERSEDING MIL-S-19500/455B 19 January 1988 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING

MMBTA56LT1

Abstract: marking code 2GM SOT 23
Contextual Info: MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 is a Preferred Device Driver Transistors PNP Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MMBTA55 MMBTA56 Collector −Base Voltage

SAA1027

Abstract: stepper motor driver IC IC 7017 Unit COUNTER 12v dc motor saa1027 bipolar Stepping Motor Driver 4-phase BIPOLAR STEPPER MOTOR 12v 350mA Stepper Motor 12V BIPOLAR STEPPER MOTOR transistors 18V and 500mA 12v stepper motor 1027
Contextual Info: Issued March 1997 232-2699 Data Pack J Data Sheet Stepper motor driver IC SAA 1027 RS stock number 300-237 The RS SAA1027 is a bipolar integrated circuit intended for driving a 4-phase two stator stepper motor. The circuit consists of a bidirectional 4-state counter and a

IC 7017 Unit COUNTER

Abstract: SAA1027 SAA 1027 4-phase BIPOLAR STEPPER MOTOR 12v 350mA Stepper Motor
Contextual Info: Issued March 1987 005-566 Data Pack J Data Sheet Stepper motor driver IC SAA 1027 RS stock number 300-237 The RS SAA1027 is a bipolar integrated circuit intended for driving a 4-phase two stator stepper motor. The circuit consists of a bidirectional 4-state counter and a

IR LFN

Abstract: 2SD1017 LFN ir 180W 2SB768 2SB810 2SB811 2SB812 T5L10 T8L10
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

M54578P

Contextual Info: b3E • b24Tfi27 DD1S113 bT3 ■ MIT3 M ITSUBISHI B IP O L A R DIGITAL ICs M54578P MITSUBISHI DGTL LOGIC 6-U N IT 700mA TRANSISTOR ARRAY W ITH CLAMP DIODE AND STROBE DESCRIPTION The M54578P, 6-channel sink driver, consists of 12 NPN tran­ PIN CONFIGURATION (TOP VIEW)

3SK28

Abstract: 38K28 10ID 251C ta1028 transistor BC 307 3SK 49
Contextual Info: 3SK 28 s /U D y N Z - v f tM S t& B m n m m h jy s J z ? ^ IL IC O N N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR I f l x t i INDUSTRIAL APPLICATIONS o Uni t in mm xf+mmmmm 0 5 8 MAX. o Video Pre —Amplifier Applications o VHP Band Amplifier Applications f i s 3 'S * t fi y *