BZY 100
Abstract: BZy 120 bzy 79 bzy 150 5 w zener bzy Zener BZY 97 ZENER bzy bzy 5v6 Zener BZY 32 zener 6v8
Contextual Info: «i zener diodes diodes zener 1H0MS0N-CSF Types Vzj/IZT* min max BZY 97 C 3V3 BZY 97 C 3V6 BZY 97 C 3V9 BZY 97 C 4V3 BZY 97 C 4V7 BZY 97 C 5V1 BZY 97 C 5V6 BZY 97 C 6V2 BZY 97 C 6V8 BZY 97 C 7V5 BZY 97 C 8V2 BZY 97 C 9V1 BZY 97 C 10 BZY 97 C 11 BZY 97 C 12
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bzy 100bzy 120bzy 79bzy 150+65 w zener bzyzener bzy 97zener bzybzy 5v6zener bzy 32zener 6v8
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ZENER bzy
Abstract: bzy 79 bzy 150 Zener BZY 32 bzy 200 BZy 120 bzy 6v2 5 w zener bzy bzy 50 BZY 100
Contextual Info: F Z 7 SGS-THOMSON * 7 # Rfl0 DB ilLS SirBB@»R90(SS GENERAL PURPOSE & INDUSTRIAL ZENER DIODES STANDARD ZENER DIODES Type * Pulse test 'ZT* (V (iî) (mA) H* BZY 97 C 3V3 BZY 97 C 3V6 BZY 97 C 3V9 BZY 97 C 4V3 BZY 97 C 4V7 P BZY 97 C 5V1 P BZY 97 C 5V6 P BZY 97 C 6V2
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10-4/oqzener bzybzy 79bzy 150+7zener bzy 32bzy 200bzy 120bzy 6v25 w zener bzybzy 50bzy 100
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ZENER bzy
Abstract: bzy 79 BZY97C bzy 150 Zener 4v7 bzy 6v2 bzy 53 Zener BZY 97 BZY 40 ZENER 3v3
Contextual Info: SbE D • 7 T ET S3 7 O G H l iT l 7GT ■ S6TH rZJ SCS-THOMSON f^7# MffiMilLiOTaiaaes BZY 97 C 3V3 TW/-/5* 200 S G S- T H O M S O N ZENER DIODES VOLTAG E RANGE: 3.3V TO 200V HER M ETICALLY SEALED PLASTIC CASE PACKAGE ACCORDING TO NORMALIZATION CCTU : F 126
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7tets37valu102zener bzybzy 79+8bzy97cbzy 150zener 4v7bzy 6v2bzy 53zener bzy 97bzy 40zener 3v3
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ZENER bzy
Abstract: c5v6p C4V7P BZY97C Zener BZY 97 bzy 5v6 97C56 Zener BZY 32 af126 BZY 40
Contextual Info: r Z 7 S G S - T H O M S O N ^7# MOCMglLtiO T « ! BZY 97 C 3V3 -> 200 ZENER DIODES VOLTAGE RANGE: 3.3V TO 200V HERMETICALLY SEALED PLASTIC CASE PACKAGE ACCORDING TO NORMALIZATION CCTU : F 126 PRO ELECTRON REGISTRATION HIGH SURGE CAPABILITY 20W @10ms D E S C R IP T IO N
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zener bzyc5v6pc4v7pbzy97c+6zener bzy 97bzy 5v697c56zener bzy 32af126bzy 40
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IC 7447
Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Contextual Info: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222
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ic 7447halbleiterwerk frankfurtic 7495dioda by 238+6syk 04vergleichslisteby 235d147dic 7474ic 74193
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sy 170
Abstract: SY 356 SY 360 05 sy 710 sy 360 Dioden SY 250 byx 21 SY 320 sy710 Halbleiterbauelemente DDR
Contextual Info: FUNKAMATEUR-Bauelementeinformation VD Vergleichsliste für Dioden DDR/international D D R - Vergleichs Typ typ GA 100 G A 101 G A 102 GA 104 G A 105 GAY 61 GAY 64 SA 412 SA 415 SA 418 SAY 12 SAY 16 o SAY 17 SAY 18 SAY 20 SAY 30 SAY 32 SAY 40 SAY 42 SY 170
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n4001sy 170sy 356sy 360 05+7sy 710sy 360dioden sy 250byx 21sy 320sy710halbleiterbauelemente ddr
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IAO5 Sharp
Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Contextual Info: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The
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q60103-ths10to3530to4600+10iao5 sharpfree transistor equivalent book 2scsiemens transistor asy 27diode bay 61transistor bj 131-6tesla typ 202 thyristorteslaz1072hall effect 21ez1071
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BZY91C7V5
Abstract: Zener Diodes BZY91 Series ZENER DIODE bzy91
Contextual Info: Naina Semiconductor Ltd. BZY91 Series 75W Zener Diodes Features • • • • • • • • Voltage Range 7.5 – 75 Volts Glass passivated junction 75 Watt steady state @ 65oC 5000 Watt peak pulse power Operating temperature -55oC to +175oC Good clamping ability
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bzy91-55oc175ocdo-203ab+4bzy91c7v5zener diodesbzy91 serieszener diode bzy91
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C6V3
Abstract: vc-6v3 BZY93 L-12 bzy 79
Contextual Info: BZY93 Series 20W 6-8V to 33V ± 5% Nominal Tease = 25 °C unless otherwise stated Differential resistance Working voltage' Type Number BZY93 C6V3 C7V5 C8V2 C9VI C10 C11 C12 C13 C15 C16 Cl 8 C20 C22 C24 C27 C30 C33 1 2 3 4 5 Sz typ. Vzi nom Vzi min Vzi max
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bzy93-43-2-minbs3934so-16+4c6v3vc-6v3l-12bzy 79
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OT239
Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
Contextual Info: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to
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ot239bt100a 02cqx82atrio ta 80w+6cv7351zp1481cv2154zp1430triac mw 151 500rpl5727
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bzy93c12r
Contextual Info: Naina Semiconductor Ltd. BZY93 Series 20W Zener Diodes Features • • • • • • • • Voltage Range 7.5 – 75 Volts Glass passivated junction 20 Watt steady state @ 75oC 1500 Watt peak pulse power Operating temperature -55oC to +175oC Good clamping ability
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bzy93-55oc175ocdo-203aa+1bzy93c12r
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bzy 79 zener diode
Abstract: bzy 93 diode Zener BZY 32 ZENER bzy BZY93
Contextual Info: BZY93 SERIES REGULATOR DIODES Also available to BS9305— F051 A range o f diffused silicon diodes in DO-4 metal envelopes, intended fo r use as voltage regulator and transient suppressor diodes in power stabilization and transient suppression circuits. The series consists o f the fo llo w in g types:
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bzy93bs9305--bzy93-c75bzy93-c75r+4bzy 79 zener diodebzy 93 diodezener bzy 32zener bzy
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VR525F
Abstract: VR625F VR575F vr13e VR10F C6V3 VR475F VR425F vr22 vr62
Contextual Info: V R T Series 2 25VV 3 5V to 30V ± 5% Nomina! Tamb = 25°C unless otherwise stated Differential resistance W orking voltage Type Number VR35F VR425F VR475F VR525F VR575F VR625F VR7F VR8F VR9F VR1 OF V R 11 F VR1 2 F VR1 3F VR15F VR16F VR13F VR20F VR22F
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vr35fvr425fvr475fvr525f+10vr575fvr625fvr10f-43-2-minbs3934so-16vr13ec6v3vr22vr62
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BZY91
Abstract: BS9305 BZY91-C75 BZY91-C75R BZY91-C7V5 BZY91-C7V5R 15c20
Contextual Info: M A IN T E N A N C E T Y P E BZY91 SERIES T - Q | -/ < ? PHILIPS INTERNATIONAL 5 bE D 711002b DOmbfiE ^30 • PHIN REGULATOR DIODES Also available to BS9305—F052 A range of diffused silicon diodes in DO-5 metal envelopes, intended for use as voltage regulator and
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bzy91bs9305bzy91-c7v5bzy91-c75+5bzy91-c7v5rbzy91-c75r711002b0d41b15c20
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bpx28
Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
Contextual Info: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten
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bpx28germanium diode oa 182taa920fy sot 143+6bsv57bac187kbpw14bf194ad 161bpx34
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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tda0161 equivalent1n3393bdx54f equivalentbyt301000+6bux transient voltage suppressorst90r9ua776mhsgs 2n3055transistor morocco mje13007inmos transputer reference manual
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RESISTOR CR25 philips
Abstract: philips resistor CR25 hp778d pm5171 BZY 56 cr25 philips RESISTOR CR25 BLV33F 2222-809-05002 tv schematic diagram PHILIPS
Contextual Info: APPLICATION NOTE A wide-band class-A linear power amplifier 174 − 230 MHz with 2 transistors BLV33F ECO8005 Philips Semiconductors A wide-band class-A linear power amplifier (174 − 230 MHz) with 2 transistors BLV33F CONTENTS 1 ABSTRACT 2 INTRODUCTION
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blv33feco8005sca57resistor cr25 philips+8philips resistor cr25hp778dpm5171bzy 56cr25 philipsresistor cr252222-809-05002tv schematic diagram philips
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AC125K
Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T
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76665n76889nma748pcma709pc+16ja710pca711pcia712pca723pcha741pca747pcac125k6an7tungsram 3s035t-1ecc83 application notesecl86dg 7-123tungsramac125uzpentode pl 508ot-400 tungsram
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hp778d
Abstract: pm5171 RESISTOR CR25 RESISTOR CR25 philips MGP990 2222-809-05002 2222-121 philips capacitor cross reference PR52 BZY 56
Contextual Info: APPLICATION NOTE A wide-band class-A linear power amplifier 174 − 230 MHz with two transistors BLV33 ECO7904 Philips Semiconductors A wide-band class-A linear power amplifier (174 − 230 MHz) with two transistors BLV33 CONTENTS 1 ABSTRACT 2 INTRODUCTION
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blv33eco7904sca57hp778d+9pm5171resistor cr25resistor cr25 philipsmgp9902222-809-050022222-121philips capacitor cross referencepr52bzy 56
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TRANSISTOR 132-gd
Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
Contextual Info: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n
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06o3htransistor 132-gdtransistors 132 gdequivalent io transistor 131-g+7bbc ds diodes ds 1,8transistor vergleichslisteaeg diode si 61 laf124transistor vergleichsliste ddroc1044bbc ds diodes
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RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
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rpy 86valvo halbleiterrpy94cqy 24+6bv ei 30-20 3001ldr 03diode byx 64 600valvo transistorenkp101abav99-1
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RTM 866 - 480
Abstract: SAK 110 TAA775G ITT TCA 700 Y SAJ 220 SG 2368 ITT 90 38 TCA 700 Y SAJ110 TCA 430 taa790
Contextual Info: Halbleiter bauelemente 1972/73 INTERMETALL H albleiterwerk der Deutsche ITT Industries GmbH ITT Alphabetisches Typenverzeichnis Typ S eite Typ S eite Typ Seite 1 N 914 42 2 N 3055 38 BB 121 1 N914A 1 N914B 1 N 3604 42 42 42 2 N 3962 33 BB 122 2 N 3963 2 N 3964
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n914an914brtm 866 - 480sak 110+8taa775gitt tca 700 ysaj 220sg 2368itt 90 38 tca 700 ysaj110tca 430taa790
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GV285
Abstract: WB2F ZX 27s GCYK RWV73 3183B kd-153 STRZ 37XE1 u286
Contextual Info: r B^bZch^dch r PeZX^[^XVi^dch K R GV9U27S Mlbga_rmp ? I AQU PZg^Zh Smucp amlqsknrgml GV9U?Ennpmv3 8Y1 GV9U27S?Ennpmv3 83:Y1 GV;U2M?Ennpmv3 73<Y1 GV;U?Ennpmv3 839Y1 GV;U27S?Ennpmv3 9Y1 GV;[2M?Ennpmv3 8Y1 GV;[?Ennpmv3 9Y1 GV;[27S?Ennpmv3 9Y -79XHG. GV9U?Ennpmv3 ;XE1 GV9U27S?Ennpmv3 <XE1 GV;U2M?Ennpmv3 :39XE1 GV;U?Ennpmv3 ;3=XE1
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gv9u27s839y1-79xhg39xe1+13-79xeg22lll1vjidcis2i2562589egv285wb2fzx 27sgcykrwv733183bkd-153strz37xe1u286
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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aa113aa117aa119bav17+14bav18bav19bav20bav21cqx 87germaniumaeg thyristor t 558 ftda 2516bu208bf506la 4430bf963tda1086transistor bf 175
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