0D41B Search Results

BYX52-300R

Abstract: U838 BYX52 BYX52-1200 BYX52-1200R BYX52-300 BYX52-600 BYX52-600R IEC134 international rectifier 639
Contextual Info: BYX52 SERÍES MAINTENANCE TYPE PHILIPS 5 bE INTE RNA TIO NA L D I 711002b 0D41bM2 2 S4 M P H I N ^ T -O t-l RECTIFIER DIODES Silicon rectifier diodes in DO-5 metal envelopes, intended for use in power rectifier applications. The series consists of the following types:

BYX30-200

Abstract: BYX30 BYX30-600 BYX30-200R BYX30-600R IEC134 BYX30200
Contextual Info: BYX30 SERIES T - 0 3 - 1 7 "p h i l i p s INTERNATIONAL SbE D • 711002b 0D41bD4 440 « R H I N FAST SOFT-RECOVERY RECTIFIER DIODES • With controlled avalanche Also available to BS9333-F002 Diffused silicon diodes in DO-4 m etal envelopes, capable of absorbing tran sien ts.

Contextual Info: TOSHIBA TMP90CH45 CMOS 8-BIT MICRO CONTROLLERS TMP90CH45N/TMP90CH45F 1. OUTLINE AND CHARACTERISTICS TMP90CH45 is a high speed, high performance 8-bit microcontroller developed for application in the control of various devices. TMP90CH45, CMOS 8-bit microcontroller, integrates an 8-bit CPU, RAM, A/D

YL 38 moisture

Abstract: D0417 HD4074308P eti MR-41 HD404304A HD404302S ASC ROIC ADE-202-024C HPU* 2nd sem b.a HD404304
Contextual Info: HITACHI/ hcü / h p u bZE d • mm^ lsoh oomb3fl 4 ûz ■ h i t b ADE-202-024C(0) Sep. 1990 P re lim in a ry HD404302,HD404304,HD4074308 4 - B it S in g le -C h ip M icrocom p u ter U n i t 0 HITA CH I Direct or indirect addressing of all RAM areas Subroutine nesting allowed up to 16

BYX25

Abstract: BYX25-600 diode BYX25 600 BYX25-600R BYX25-1400
Contextual Info: BYX25 SERIES ~ SbE D PHILIPS INTERNATIONAL • 711Dfl2b □ DMlS'lb 544 « P H I N T-0 7 - H CONTROLLED AVALANCHE RECTIFIER DIODES Diffused silicon diodes in DO—4 metal envelopes, capable of absorbing transients and intended for power rectifier applications. The series consists of the following types:

ot 409

Abstract: Am386DX
Contextual Info: A D V A N C E D MI CRO D E V I C E S HfiE D • 02S7S2S O D 41 bb S 1 ■ AUDI T : H ci -1 7 - 3 4 Am386 SXL High-Performance, 32-Bit Microprocessor with 16-Bit Data Bus Advanced Micro Devices DISTINCTIVE CHARACTERISTICS ■ 25- and 20-MHz operating speeds

BYX46

Abstract: 7Z10045 diode 10di T50 thyristor BYX46-600 BYX46-200 BYX46-200R BYX46-600R D696
Contextual Info: BYX46 SERIES PHILIPS SbE D INTERNATIONAL • 7110a2b 0041b3D S32 ■ P H I N _ FAST SOFT-RECOVERY RECTIFIER DIODES - r t ^ * • With controlled avalanche Diffused silicon diodes in DO-4 metal envelopes, capable of absorbing transients. They are primarily

amd processor based Circuit Diagram

Abstract: 80C287-10 cpu audi 80C286 NPS-2
Contextual Info: AD VA N C E D MICR O D E V I CE S 4ÔE D G2 5 7 5 2 5 O O M l b l ö 3 • AMD! a AMD 80C287 Advanced Micro 80-Bit CMOS Math Coprocessor Devices DISTINCTIVE CHARACTERISTICS ■ High-performance CMOS process yields 10-MHz and 12-MHz speed grades ■ Available in space-saving 44-pin PLCC as well

BYX98

Abstract: BYX98-300 BYX98-300R
Contextual Info: BYX98 SERIES T —0 \ - I 7 PHILIPS INTERN A T I O N A L 711D0Sb DOMlfcitiM T1S ShE D IPHIN RECTIFIER DIODES Silicon rectifier diodes in DO -4 metal envelopes, intended for use in power rectifier applications. The series consists o f the following types: Normal polarity cathode to stud : B Y X 9 8 -3 0 0 to 1200.

Contextual Info: TOSHIBA TENTATIVE TC55V4336FF-100,-83 T O SH IBA M O S DIGITAL INTEGRATED CIRCUIT SILICON GATE C M O S 131,072-W ORD BY 32-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4336FF is a 4,194,304-bit synchronous Flow through static random access memory SRAM

Contextual Info: GaAs MM 1C Non-Reflective SPDT Switch HITTITE MICROWAVE CORPORATION HMC104 FEBRUARY 1995 Features BANDWIDTH: DC-6 GHZ LOW INSERTION LOSS : <1 dB HIGH ISOLATION: > 40 dB Typical Performance General Description The HMC104 chip is a fast, broadband SPDT switch. It features RF and control

Contextual Info: b2E D • ¿W £ .-¿ U ¿ -U O i i u j 44TbBQM OOMlSbB 7S7 ■ HIT3 HITACHI/ Mar. 1992 P relim inary MCU/MPU HD404272/HD40L4272/HD4074274 4-B it Single-Chip Microcomputer HITACHI Description Minimum instruction cycle time — 0.89 us (fosc = 4.5 MHz, Vc c = 3.5-6.0