BZY 32 Search Results

BZY 100

Abstract: BZy 120 bzy 79 bzy 150 5 w zener bzy Zener BZY 97 ZENER bzy bzy 5v6 Zener BZY 32 zener 6v8
Contextual Info: «i zener diodes diodes zener 1H0MS0N-CSF Types Vzj/IZT* min max BZY 97 C 3V3 BZY 97 C 3V6 BZY 97 C 3V9 BZY 97 C 4V3 BZY 97 C 4V7 BZY 97 C 5V1 BZY 97 C 5V6 BZY 97 C 6V2 BZY 97 C 6V8 BZY 97 C 7V5 BZY 97 C 8V2 BZY 97 C 9V1 BZY 97 C 10 BZY 97 C 11 BZY 97 C 12

ZENER bzy

Abstract: bzy 79 bzy 150 Zener BZY 32 bzy 200 BZy 120 bzy 6v2 5 w zener bzy bzy 50 BZY 100
Contextual Info: F Z 7 SGS-THOMSON * 7 # Rfl0 DB ilLS SirBB@»R90(SS GENERAL PURPOSE & INDUSTRIAL ZENER DIODES STANDARD ZENER DIODES Type * Pulse test 'ZT* (V (iî) (mA) H* BZY 97 C 3V3 BZY 97 C 3V6 BZY 97 C 3V9 BZY 97 C 4V3 BZY 97 C 4V7 P BZY 97 C 5V1 P BZY 97 C 5V6 P BZY 97 C 6V2

ZENER bzy

Abstract: bzy 79 BZY97C bzy 150 Zener 4v7 bzy 6v2 bzy 53 Zener BZY 97 BZY 40 ZENER 3v3
Contextual Info: SbE D • 7 T ET S3 7 O G H l iT l 7GT ■ S6TH rZJ SCS-THOMSON f^7# MffiMilLiOTaiaaes BZY 97 C 3V3 TW/-/5* 200 S G S- T H O M S O N ZENER DIODES VOLTAG E RANGE: 3.3V TO 200V HER M ETICALLY SEALED PLASTIC CASE PACKAGE ACCORDING TO NORMALIZATION CCTU : F 126

ZENER bzy

Abstract: c5v6p C4V7P BZY97C Zener BZY 97 bzy 5v6 97C56 Zener BZY 32 af126 BZY 40
Contextual Info: r Z 7 S G S - T H O M S O N ^7# MOCMglLtiO T « ! BZY 97 C 3V3 -> 200 ZENER DIODES VOLTAGE RANGE: 3.3V TO 200V HERMETICALLY SEALED PLASTIC CASE PACKAGE ACCORDING TO NORMALIZATION CCTU : F 126 PRO ELECTRON REGISTRATION HIGH SURGE CAPABILITY 20W @10ms D E S C R IP T IO N

bzx 850

Abstract: BZX 850 12 bzy 79 zener diode bzx 850 10 bzx 850 20 bzx 850 30 DIODE BZX red red green zener diode DIODE BZX 24 red green green zener diode
Contextual Info: Zenerjeve diode 500 mW Zener diodes 500 mW Plot = 500 mV lz maks./max. uz pri/at •. pri/at lz = 5 mA < U -4 6 *C min. maks./max. Tip/Type V 0.7 2.5 2.8 3.1 3.4 3.7 4.0 4.4 J3ZX1’ BZX 2 7 BZX 3 BZX 3.3 BZX 3.6 BZX3.9 BZX 4.3 BZX 4.7 BZX 5.1 BZX 5.6 BZX 6.2

sy 170

Abstract: SY 356 SY 360 05 sy 710 sy 360 Dioden SY 250 byx 21 SY 320 sy710 Halbleiterbauelemente DDR
Contextual Info: FUNKAMATEUR-Bauelementeinformation VD Vergleichsliste für Dioden DDR/international D D R - Vergleichs­ Typ typ GA 100 G A 101 G A 102 GA 104 G A 105 GAY 61 GAY 64 SA 412 SA 415 SA 418 SAY 12 SAY 16 o SAY 17 SAY 18 SAY 20 SAY 30 SAY 32 SAY 40 SAY 42 SY 170

15 BZX

Abstract: BZY 100 bzx c 1v4 bzx c27 bzy 200 85C36 bzx 2v1
Contextual Info: Diodes Z diodes BZX 8 5 / . . . ' Type Pv = 1.3 W t/z Fig. Nr. 21 V and 10'4/°C ano 'zj at O >Z mA 'zj a* O >Z mA / R at ma ÜR V 1 BZX 8 5 /C 2 V 7 2.5.2.9 -8 .-5 < 20 80 <400 1 < 150 BZX 8 5 /C 3 V 0 2 .8 .3 2 -8 .-5 < 20 80 <400 1 < 100 1 BZX 8 5 /C 3 V 3

IAO5 Sharp

Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Contextual Info: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The

IC 7447

Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Contextual Info: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222

bzy39

Abstract: BZY 100 BZY120 BZY150 bzy27 ZENER bzy bzy3 BZY 32 W136 bzy 150
Contextual Info: FAGOR i S7E ] • 345^325 0QGQ7SS 715 M F GRS BZY97C7V5 BZY97C200V FAGOR ELECTRONICS Dimensions in nun. D O -15 F-126 58 A 2 Plastic) Voltage 7.5 to 200 V Power 1.5 W Mounting instructions 1. Mm. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350°C.

BZY91C7V5

Abstract: Zener Diodes BZY91 Series ZENER DIODE bzy91
Contextual Info: Naina Semiconductor Ltd. BZY91 Series 75W Zener Diodes Features • • • • • • • • Voltage Range 7.5 – 75 Volts Glass passivated junction 75 Watt steady state @ 65oC 5000 Watt peak pulse power Operating temperature -55oC to +175oC Good clamping ability

C6V3

Abstract: vc-6v3 BZY93 L-12 bzy 79
Contextual Info: BZY93 Series 20W 6-8V to 33V ± 5% Nominal Tease = 25 °C unless otherwise stated Differential resistance Working voltage' Type Number BZY93 C6V3 C7V5 C8V2 C9VI C10 C11 C12 C13 C15 C16 Cl 8 C20 C22 C24 C27 C30 C33 1 2 3 4 5 Sz typ. Vzi nom Vzi min Vzi max

BZY 40

Contextual Info: PRELIMINARY 56F6408 512 Megabit Flash NOR PINOUT WP# Memory Functional Block Diagram FEATURES: DESCRIPTION: • Single Power Supply Operation Maxwell Technologies 56F6408 high density, 3.3V, 512 Megabit Flash Memory device, features a greater than 100Krads Si total dose tolerance,

bzy93c12r

Contextual Info: Naina Semiconductor Ltd. BZY93 Series 20W Zener Diodes Features • • • • • • • • Voltage Range 7.5 – 75 Volts Glass passivated junction 20 Watt steady state @ 75oC 1500 Watt peak pulse power Operating temperature -55oC to +175oC Good clamping ability

transistor 6bw

Abstract: PCF50633 PCF50 Ericsson Battery Backup System
Contextual Info: Power management unit with battery-charger PCF50633 longer battery life and smaller footprint in media players and other portable devices Optimized for use in media players and other portable applications, this small highly-integrated power management unit PMU enables complete, system-level

VR525F

Abstract: VR625F VR575F vr13e VR10F C6V3 VR475F VR425F vr22 vr62
Contextual Info: V R T Series 2 25VV 3 5V to 30V ± 5% Nomina! Tamb = 25°C unless otherwise stated Differential resistance W orking voltage Type Number VR35F VR425F VR475F VR525F VR575F VR625F VR7F VR8F VR9F VR1 OF V R 11 F VR1 2 F VR1 3F VR15F VR16F VR13F VR20F VR22F

OT239

Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
Contextual Info: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to

BZY91

Abstract: BS9305 BZY91-C75 BZY91-C75R BZY91-C7V5 BZY91-C7V5R 15c20
Contextual Info: M A IN T E N A N C E T Y P E BZY91 SERIES T - Q | -/ < ? PHILIPS INTERNATIONAL 5 bE D 711002b DOmbfiE ^30 • PHIN REGULATOR DIODES Also available to BS9305—F052 A range of diffused silicon diodes in DO-5 metal envelopes, intended for use as voltage regulator and

Contextual Info: OPA2889 OP A2 889 OP A28 89 www.ti.com . SBOS373B – JUNE 2007 – REVISED AUGUST 2008 Dual, Low-Power, Wideband, Voltage-Feedback

BZY93

Contextual Info: N ANER E5E PHILIPS/DISCRETE D • ^ 5 3 *13 1 Q0S£aa3 7 ■ BZY93 SERIES A T ii- n REGULATOR DIODES Also available to BS9305—F051 A range of diffused silicon diodes in DO-4 metal envelopes, intended for use as voltage regulator and transient suppressor diodes in power stabilization and transient suppression circuits.

bpx28

Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
Contextual Info: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten

Contextual Info: OPA2889 OP A2 889 OP A28 89 www.ti.com . SBOS373B – JUNE 2007 – REVISED AUGUST 2008 Dual, Low-Power, Wideband, Voltage-Feedback

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

TEA5990

Abstract: PNX6710 PCF50623 GNS7560 an 6710 diagram circuit usb mp3 player with radio fm lcd CMOS Sensor to H.264 VFBGA100 Aero4229 nfc antenna
Contextual Info: Cellular system solution 6710 Compact, low-power system solution for HSDPA February 2009 www.stericsson.com This highly integrated 3.5G solution uses a fully validated modem and advanced multimedia technology to reduce design complexity and time-to-market. It provides an evolutionary step that brings ST-Ericsson leadership in EDGE and