BYX 12 800 Search Results

BYX63-800

Abstract: GR812 1N3890 1N3891 1N3900 1N3903 1N3909 BYX62-600 BYX62-800 BYX63-600
Contextual Info: DIODES DE REDRESSEMENT RAPIDE fast recovery rectifier diodes BYX BYX BYX BYX BYX BYX 66 - 500, R 66 - 600, (R) 66 - 700, (R) 66 - 800, (R) 66 - 900, (R) 6 6 -1 0 0 0 , (R) 12 A / tcase = 100°C * IN 3889, (R) * 1N 3890, (R) * 1N 3891, (R) * 1N 3892, (R)

byx 200

Contextual Info: 57E D • CN301R54 0000045 7ST ■ D I O T BYX 40-200.-800 DIOTEC ELEKTRON ISC HE Silicon Rectifier Nominal current 12 A Repetitive peak reverse voltage 200.800 V Metal case DO-4 Weight a p p r o x . 5.7 g All dimensions in mm Maximum ratings Type BYX 40-200

byx 200

Abstract: esm diodes byx 65 400 243300 243_400 243400 BYX/400 65400 ESM 244-600 244-600
Contextual Info: rZ7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL RECTIFIER DIODES FAST RECOVERY RECTIFIER DIODES < 100 A Continued Type •o VRRM •fsm 1 vF iF 10 ms max ESM 765PI-600 ESM 765PI-800 BYX61- 50, BYX 61-100, BYX 61-200, BYX 61-300, BYX 61-400, (R) (R) (R) (R)

BYT 1000

Abstract: diodes byt diodes byt 400 byx 12 800 D015 BA158 do218 byx 200
Contextual Info: u 'LB Q A G rlB B RECTIFIER DIODES Fast-recovery-diodes Type • V rrm V (A) ■fsm (A) If a v (V) If (A) (us) Case JEDEC VF at trr BA 157 BA 158 BA 159 400 600 1000 1.0 35 <1.3 1.0 <0.3 D015 BY 396 BY 397 BY 398 BY 399 RGP 30M 100 200 400 800 1000 3.0 60

Diode 1N4007 DO-7 Rectifier Diode

Abstract: 1N40075 BYX/400 1N4007 RECTIFIER DIODE 4007 uf 1200 BAX12 BYW52 BYW53 BYW54 BYW55
Contextual Info: Diodes Rectifier and Avalanche diodes Type BY 202 BY 203 BY 204 Maximum ratings Notes Characteristics V 4 8006 90 <300 £ 1 .0 200 £ 507) Contact protection diode 2 5 1000') 200 £100 £ 1 .2 1000 £ 3503) Fast rectifier diodes 3 5 1000') 300 £100 <1.2

diode byx 32

Abstract: diode byx diode byx 66-1000 DIODE REDRESSEMENT Diodes de redressement LA 7123 byx 21 diodes redressement thomson alimentation decoupage t03h
Contextual Info: S G STC S -¡-THOMSON D | 7 ^ 2 3 7 ÜODaaôT BYX 66-600, R BYX 66-1000, (R) O THOMSON-CSF 'DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY RECTIFIER DIODES DIODES DE REDRESSEMENT RAPIDES 59C 02289 d r^oi-n \ HIGH VOLTAGE SUPERSWITCH RECTIFIERS

diode byx

Abstract: diode byx 65 400 byx 200 BYX 13 400 R 74137 76136 byx85
Contextual Info: IB» BYX 82 O £s BYX 86 O 'W Silizium-Mesa-Dioden Silicon Mesa diodes Anwendung : Leistungsgleichrichter Applications: Pow er rectifier Features: Besondere Merkmale: • Herm etische Glasspassivierung • Hermetically sealed glass passivation • Gute Wärmeableitung über die

byx 21

Abstract: byx 200 TI 65300 RPR2040 diodes byt RPR2040R Thomson-CSF diodes de redressement Diodes de redressement
Contextual Info: fast recovery rectifier diodes < 100 A diodes de redressement rapide < 100 A THOMSON-CSF Types 1N 3899, R A IN 3900, (R) A1N 3901, (R) A1N 3902, (R) A1N 3903, (R) BYX 63-600, (R) (A) (V) (R) (R) (R) (R) (R) 30 A / BYX BYX BYX BYX BYX BYX 40 A / RPR RPR RPR

BYX 71 800

Abstract: diode byx alimentation decoupage THOMSON byx 21 BYX 71 600 diodes redressement thomson diode byx 66-1000
Contextual Info: STC D | S G S-¡-THOMSON O 7 ^ 2 3 7 ÜODaaôT BYX 66-600, R BYX 66-1000, (R) T H O M S O N -C S F 'DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY RECTIFIER DIODES DIODES DE REDRESSEMENT RAPIDES 59C 02289 d r^oi-n \ HIGH VOLTAGE SUPERSWITCH

diode byx

Abstract: BYX67-1000 DIODE REDRESSEMENT BYX 13 400 R byx 21 diode byx 67-1000 diode byx 32 BYX/400 BYX67 400 BYX67-600
Contextual Info: STCd S G S—THOMSON O | 7 cî 2 c] c! 3 ? BYX 67-600, R BYX 67-1000, (R) 1 H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY R EC T IFIE R DIODES DIODES DE REDRESSEMENT RAPIDES 59C 02299 D f-Û HIGH VOLTAGE V RRM 6 0 0 -+ 1 0 0 0 V

diode byx

Abstract: PAS 1066 byx 21
Contextual Info: STCd | S G S—THOMSON O 7 cî 2 c] c!3? BYX 67-600, R BYX 67-1000, (R) 1 H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY RECTIFIER DIODES DIODES DE REDRESSEMENT RAPIDES 59C 02299 D f-Û HIGH VOLTAGE V RRM 600 -+ 1000 V 'F (A V ) <Tcm « 100°C)

byx 61 400

Abstract: byx 33 400 BYX61-50 Thomson-CSF rectifier GR606 diodes byt
Contextual Info: fast recovery rectifier diodes < 100 A diodes de redressement rapide < 100 A Types 6 A / Tcase = 85°C ESM ESM ESM ESM ESM 255-50 R 255-100 R 255-200 R 255-300 R 255-400 R 10 20 40 60 80 zzzzz 765-10 765-20 765-40 765-60 765-80 R (R) (R) (R) (R) 1N 3889, (R)

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

BYX82

Abstract: BYX83 BYX84 BYX85 BYX86 BYX 98
Contextual Info: BYX82.BYX86 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Applications 94 9539 Rectifier, general purpose Absolute Maximum Ratings Tj = 25_C

Contextual Info: BYX82 / 83 / 84 / 85 / 86 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Applications Rectification, general purpose

BYX82

Abstract: BYX83 BYX84 BYX85 BYX86
Contextual Info: BYX82.BYX86 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Applications 94 9539 Rectifier, general purpose Absolute Maximum Ratings Tj = 25_C

BYX82

Abstract: BYX83 BYX84 BYX85 BYX86
Contextual Info: BYX82.BYX86 TELEFUNKEN Semiconductors Silicon Mesa Rectifiers Features D Glass passivated junction D Hermetically sealed package D Low reverse current D High surge current loading Applications 94 9539 Rectifier, general purpose Absolute Maximum Ratings Tj = 25_C

Contextual Info: BYX82.BYX86 Vishay Semiconductors Silicon Mesa Rectifiers Features D D D D Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Applications 94 9539 Rectifier, general purpose Absolute Maximum Ratings Tj = 25_C

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

Contextual Info: BYX82 / 83 / 84 / 85 / 86 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • Glass passivated junction Hermetically sealed package e2 Low reverse current High surge current loading Lead Pb -free component Component in accordance to RoHS 2002/95/EC

Contextual Info: BYX82, BYX83, BYX84, BYX85, BYX86 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading • Compliant to RoHS directive 2002/95/EC and in

IC 7447

Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Contextual Info: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222

BYX85

Abstract: BYX82 BYX83 BYX84 BYX86
Contextual Info: BYX82.BYX86 Silicon Mesa Rectifiers Features D D D D Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Applications Rectifier, general purpose 94 9539 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage,

Contextual Info: BYX82, BYX83, BYX84, BYX85, BYX86 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading • Material categorization: