BYX Search Results

tj1k

Contextual Info: Tem ic BYX82.BYX86 TELEFUNKEN Semiconductors Silicon Mesa Rectifiers Features • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading Applications 94 9539 Rectifier, general purpose Absolute Maximum Ratings

as6 diode

Abstract: BYX96-300 diode as6 BYX96 BYX96-300R BYX96-300U
Contextual Info: BYX96 SERIES PHILIPS INTERNATIONAL SbE D • 7110ÔEb OD41bSS 1T3 ■ PHIN T ~ 0 - n RECTIFIER DIODES A ls o availab le to B S 9 3 3 1 - F 1 2 9 S ilic o n re ctifie r dio d es in m etal envelopes sim ila r to D O -4 , intended fo r use in p o w er rectifier

dd407

Abstract: BYX110GP DDMD731 QDM073M
Contextual Info: 5bE D 7110Ö2L> □D4D731 IPHIN Mb2 Product specification P h ilip s se m ico n a u cto rs T - O l - O BYX110GP EHT avalanche diode PHILIPS IN TERNATIONAL FEATURES • G lass passivated and supplied in plastic encapsulated envelopes • Withstands accelerated damp

THYRISTOR ts 602

Abstract: BYX30-200R BYX31 BYX30 BYX30-600R BYX30-200 INVERTER 50 kW BYX30-600 IEC134 DM51
Contextual Info: BYX30 SERIES T - 0 3 - 1 7 PHILIPS INTERNATIONAL SbE D • 711DfiEh 0041b04 440 « P H I N FAST SOFT-RECOVERY RECTIFIER DIODES • With controlled avalanche Also available to BS9333-F002 D iffu sed s ilic o n d io d e s in D O -4 m e ta l e n v e lo p e s , c a p a b le o f a b s o r b in g tr a n s i e n t s .

BYX99-300

Abstract: BYX99 BYX99-300R 7110A2E
Contextual Info: BYX99 S E R IE S T-O S-iT PHILIPS INTERNATIONAL viiosEb GDmti7G i n SbE ]> IPHIN RECTIFIER DIODES Silicon rectifier diodes in D O -4 metal envelopes, intended for use in power rectifier applications. The series consists o f the following types: Normal polarity cathode to stud ; B Y X 9 9 -3 0 0 to 1200.

BYX39 400

Abstract: BYX39 BYX39-1400 BYX39-1400R BYX39-600 BYX39-600R IEC134
Contextual Info: BYX39 SERIES r-ûi-\z_ - PHILIPS INT ERNATIONAL 5 L jE 711002b 0Dmb2G D IPHIN CONTROLLED AVALANCHE RECTIFIER DIODES Also available to BS9333—F005 Silicon diodes in a DO—4 metal envelope, capable of absorbing transients and Intended for use in power rectifier application.

Contextual Info: N AMER PH ILI PS/ DI SC RE TE TOD D LL53T31 OOlOOflb T • m MAINTENANCE TYPES BYX32 SERIES _ J \ SILICON RECTIFIER DIODES Diffused silicon diodes in metal envelopes w ith ceramic insulation, intended fo r power rectifier application. The series consists o f the follow ing types:

PHILIPS BYX50-200

Contextual Info: N AUER PHILIPS/DISCRETE TDD D bb53T31 0010520 T BYX50 SERIES T - 0 3 -/ 7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO-4 metal envelopes, intended fo r use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications. The series consists o f the follow ing types:

BYX38-300

Abstract: BYX38 BYX38-300R iC-NC BYX38/300 T0117
Contextual Info: BYX38 SERIES SbE D PHILIPS INTERNATIONAL • 711QÛ2b D D M l b m 3TT ■ P H I N T - 0 M 7 SILICON RECTIFIER DIODES Silicon rectifier diodes in DO-4 metal envelopes, intended for use in power rectifier applications. The series consists of the following types:

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D181 BYX90G High-voltage soft-recovery controlled avalanche rectifier Product specification Supersedes data of June 1996 1996 Sep 26 Philips Semiconductors Product specification High-voltage soft-recovery

Contextual Info: BYX82.BYX86 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Applications 94 9539 Rectifier, general purpose Absolute Maximum Ratings Tj = 25_C

diode Cathode indicated by blue band

Abstract: automotive ignition Electronic car ignition circuit
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D473 BYX134GPL High-voltage car ignition diode Product specification Supersedes data of 2000 Jul 17 2001 Oct 01 Philips Semiconductors Product specification High-voltage car ignition diode BYX134GPL FEATURES DESCRIPTION

automotive ignition

Abstract: Electronic car ignition circuit PHILIPS BYX134GP
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D350 BYX134GP High-voltage car ignition diode Product specification Supersedes data of 1998 Dec 04 2001 Oct 02 Philips Semiconductors Product specification High-voltage car ignition diode BYX134GP FEATURES DESCRIPTION • Glass passivated

diode byx

Abstract: diode byx 65 400 byx 200 BYX 13 400 R 74137 76136 byx85
Contextual Info: IB» BYX 82 O £s BYX 86 O 'W Silizium-Mesa-Dioden Silicon Mesa diodes Anwendung : Leistungsgleichrichter Applications: Pow er rectifier Features: Besondere Merkmale: • Herm etische Glasspassivierung • Hermetically sealed glass passivation • Gute Wärmeableitung über die

BP317

Abstract: BYX135GPL SOD125
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D473 BYX135GPL High-voltage car ignition diode Product specification 2000 Jul 17 Philips Semiconductors Product specification High-voltage car ignition diode BYX135GPL FEATURES DESCRIPTION • Plastic package Plastic package, using glass passivation and a high

Contextual Info: s G S-THOMSON I^ Q uT d” ! 7^5=1237 Q QQ 2 G Û 3 1N 3909—1N 3913, R BYX 64-600, (R) THOMSON-CSF DIVISION SEMICONDUCTEURS DISCRETS. SUPERSWITCH FAST RECOVERY RECTIFIER DIODES D/ODES DE REDRESSEMENT RAPIDES 59 C 0 2 0 8 3 FAST RECOVERY SUPERSWITCH RECTIFIERS

Contextual Info: BYX10GP Vishay General Semiconductor Miniature Glass Passivated Junction Rectifier FEATURES • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • 0.36 A operation at TA = 40 °C with no thermal runaway • Typical IR less than 0.1 A

BYX10GP-E3/4

Contextual Info: BYX10GP Vishay General Semiconductor Miniature Glass Passivated Junction Rectifier FEATURES • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • 0.36 A operation at TA = 40 °C with no thermal runaway • Typical IR less than 0.1 A

Q62702-P3573

Abstract: 975nm Q62702-P5244
Contextual Info: Unmontierter Laserbarren 10 W cw . 120 W qcw Unmounted Laser Bars 10 W cw . 120 W qcw SPL Byxx Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Unmontierter Laserbarren • Hoch-effiziente MOVPE Quantenfilmstruktur • Absolut zuverlässiges kompressiv verspanntes

Contextual Info: N AUER PHILIPS/DISCRETE blE I> bb53^31 DDSbbT1! ITT IAPX BYX90G E.H.T. AVALANCHE FAST SOFT-RECOVERY DIODE E.H.T. rectifier diode in glass envelope intended for general purpose high-voltage rectifying and also designed as sub-component for very high voltage stacks, fo r example, in X-ray equipment with fre­

byx30

Contextual Info: N AMER PHILIPS/DISCRETE 2SE D B ^53=131 0 0 2 2 7 ^ 7 B A _ BYX30 SERIES 7^0 3 - 1 7 FAST SOFT-RECOVERY RECTIFIER DIODES • With controlled avalanche Also available to BS9333-F002 Diffused silicon diodes in DO-4 m etal envelopes, capable of absorbing tran sien ts.

Contextual Info: BYX25 SERIES N AMER P H I L I P S / D I S C R E T E bb53=131 00227=11 2 • 25E D 7 ^o m 9 CONTROLLED AVALANCHE RECTIFIER DIODES Diffused silicon diodes in DO—4 metal envelopes, capable of absorbing transients and intended fo r power rectifier applications. The series consists of the following types:

Contextual Info: BYX10G J V RECTIFIER DIODE Double-diffused glass-passivated rectifier diode in hermetically sealed axial-leaded glass envelope, intended for use in general industrial applications where a high repetitive peak reverse voltage is required. QUICK REFERENCE DATA

7Z66

Abstract: BYX39-1400 BYX39-600 016T oowe BYX39 BYX39-1400R BYX39-600R IEC134 BYX39 400
Contextual Info: AMER PH ILIPS/DISCRETE 25E ^53^31 D 0022Û1S 1 Hi BYX39 SERIES 7 = 0 1 -1 7 CONTROLLED AVALANCHE RECTIFIER DIODES Also available to BS9333— F005 Silicon diodes in a DO— 4 metal envelope, capable o f absorbing transients and Intended for use in power rectifier application.