BYW 91 Search Results

byw 150

Abstract: diode byw 81 200 diode BYW 66 BYW29 JESD22-B102D J-STD-002B
Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time ITO-220AC TO-220AC • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series

Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

diode BYW 66

Abstract: BYW29 JESD22-B102 J-STD-002 BYW29-200-E3 byw 91-4
Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

byw 91-4

Abstract: BYW series byw29
Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

byw 04-15

Abstract: BYW29 JESD22-B102D J-STD-002B byw 91-4
Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction ITO-220AC TO-220AC • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series

BYW295

Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

BYW29

Abstract: JESD22-B102 J-STD-002
Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

byw 150

Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time ITO-220AC TO-220AC • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series

Contextual Info: r r z SGS-THOMSON Ä 7 # Rfll]eiHì s iLECTIHÌ K)DCS BYW 99PI-50 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES . VERY SM ALL CO NDUCTION LOSSES . NEGLIGIBLE SW ITCHING LOSSES • LOW FORWARD AND REVERSE RECOVERY TIMES ■ THE SPECIFICATIONS AND CURVES EN­

Contextual Info: rz 7 *1 M SCS-THOMSON r a m m ic im in e i BYW 77PI-50 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SW ITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES . HIGH SURGE CURRENT AND AVALANCHE CAPABILITY

BYW 90

Contextual Info: f Z 7 Ä 7# S G S -T H O M S O N s « M ü * s BYW 81-50 200 HIGH EFFIC IEN C Y FAST R ECO VER Y R ECTIFIER D IODES • VERY LOW CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES ■ HIGH SURGE CURRENT AND AVALANCHE

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

DIODES BYD

Abstract: BYD13M BYG50J diodes byw sod91
Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Medium-power rectifiers GENERAL-PURPO SE AVALANCHE RECTIFIERS OVERVIEW leaded surface-mount VR SO D 91 SO D 81 SO D 5 7 SO D 57 SO D 6 4 SO D 8 7 S O D 106

N5625

Abstract: diodes byw N5624 diodes byw 88 600 r
Contextual Info: BYW82.BYW86 Vishay Telefunken Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • C ontrolled avalanche characteristics • Low reverse current • High surge current loading • Electrically equivalent diodes:

N5062

Abstract: Diode BYW 56 TELEFUNKEN BYW-56 N-5061 diodes byw diodes byw 88 600 r N5059
Contextual Info: BYW52.BYW56 Vishay Telefunken Silicon Mesa Rectifiers Features • C ontrolled avalanche characteristics • G lass passivated junction • H erm etically sealed package • Low reverse current • High surge current loading • Electrically equivalent diodes:

fast diode byw 98 200

Abstract: silicon diode byw 60
Contextual Info: BYW72.BYW76 Vishay Telefunken Fast Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • Low reverse current • Soft recovery characteristics Applications 94 9588 Fast rectifier and sw itch fo r exam ple fo r T V -lin e o ut­

diode BYW 91

Abstract: byw 98 100 fast diode byw 98 200 fast diode byw 98 100
Contextual Info: BYW32.BYW36 Vishay Telefunken Fast Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • Low reverse current • Soft recovery characteristics Applications Fast rectifier and sw itch fo r exam ple fo r T V -lin e o ut­

Contextual Info: r z T SGS-THOMSON ^ 7# B Y W 9 9 P -5 0 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • VERY SM ALL CONDUCTION LOSSES . NEGLIGIBLE SW ITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES . THE SPECIFICATIONS AND CURVES EN­ ABLE THE DETERMINATION OF t rr AND I r m

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

FEP300P

Abstract: BYY26-1 BYY26 FES160T BYV 20f 8YV27-2DO BYy27 UF540I Gw260 FEP300
Contextual Info: LOW TO MEDIUM CURRENT AXIAL FAST EPITAXIAL RECTIFIERS UGOU dm U0060 UG1A in U010 PACKAGE MPG06 DO-2D4AL » A VU 0M 0.6 1.0 UGNA TYPE VFklQOM VfelttM VUOOM VUOOM vfMom VWflOM vMoom VM M VhlttOM *r H RElD 0W 04AP 91001 Hn GltOM 8YV260 tin BWSE UG2A ihm UQJD

diode BYW 64

Abstract: B81121 X2 mkt TDB7812T B81121 B32530 1nf 100v mkt 100v mkt b81121 x2 7812T B41822
Contextual Info: Monitor -IC Nr 1 2 3 4 5 6 7 8 9 10 11 12 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 Name BR1 C11 C12 C13 C14 C15 C21 C22 C23 C24 C25 C26 C27 C31 C32 C33 C34 C35 C36 C37 C38 C39 C41 C42 C43 C44 C51 C52 C53 C54 C61 C62