BYV 30 45 Search Results

TMM BAT 48

Abstract: melf Schottky Byv 10-40 tm BYV 30 45 BAT 49
Contextual Info: r=7 SURFACE MOUNT DEVICES ^ 7# SGS-THOMSON IlO ÎÂ ilL iÊ ÎIiM ilÊ i GENERAL PURPOSE & INDUSTRIAL MINIMELF I MELF MINIMELF MELF SCHOTTKY DIODES Type VRRM 'F V •o* (mA) UHF and ultra fast switching TMM TMM TMM TMM BAR 19 BAT 29 BAT 19 BAT 45 |R (1)

Contextual Info: SIYU R BYV26A . BYV26G 塑封超快速整流二极管 Plastic Ultra-Fast Recover Rectifier Reverse Voltage 200 to 1400V Forward Current 1.0 to 1.05A 反向电压 200 - 1400 V 正向电流 1.00 - 1.05 A 特征 Features DO-15 •低的反向漏电流 Low reverse leakage

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

SOD106A

Abstract: 1N5819 sod87 IMPLOTEC byv 20 diode 1N5817 Philips BYG90-40 BYG90-90 sod81
Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Medium-power rectifiers SCHOTTKY-BARRIER DIODES OVERVIEW leaded Vr V 20 30 40 90 100 SOD81 1.0 A SOD87 1.0 A surface-mount SOD106A SOT223 1.0 A 1.0 A

Contextual Info: SIYU R BYV26A . BYV26G 塑封超快速整流二极管 Plastic Ultra-Fast Recover Rectifier Reverse Voltage 200 to 1400V Forward Current 1.0 to 1.05A 反向电压 200 - 1400 V 正向电流 1.00 - 1.05 A 特征 Features DO-15 ・低的反向漏电流 Low reverse leakage

BY407A

Abstract: BYV 88 800 BYV88-200 BY406A Scans-00109689 BY407 BYV88-600 MC44 NS100-MA CB-210
Contextual Info: fast recovery rectifier diodes diodes de redressement rapide Types •o V ■fsm r r n i < Vf / 10 ms 100 A < If ■r / V max A (V I 100 mA / Tamb = 25°C PR 05 PR 11 PR 21 PR 31 PR 41 400 mA / Tamb = 25°C MC MC MC MC MC 22 42 43 44 45 400 mA / Tamb = 25°C

Diode BYV 95

Abstract: byv 16 BYV 08
Contextual Info: BYV12, BYV 13, BYV 14, BYV 15, BYV 16 Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Lead Pb -free component • Compliant to RoHS directive 2002/95/EC and in

byw32-200

Abstract: BY228-1500 BYV 200 byt 77 byv 25-200 BYV13 BYV14 BYV16 BYW32 BYW33
Contextual Info: TELEFUNKEN ELECTRONIC ñ lC J> • ñc!5D0tlb OOQSb^ B MAU6G 'T-O f^ O f Sinterglass Rectifiers Fast Rectifiers-Soft recovery—in Sinterglass package: ^ R _ 2 5 ns tt>*550 ns Type Electrical characteristics Vr W VRRM V A BY 203/12 S /16S /20S BY 228 BY 228/13 S

v26ev

Abstract: BYV26 byv26 500 V26C BYv26 200 BYV 200 YV26C
Contextual Info: Te m ic BYV26 TELEFUNKEN Semiconductors Very Fast Soft-Recovery Avalanche Rectifier Features • Glass passivated junction • Hermetically sealed package • Very low switching losses • Low reverse current • High reverse voltage Applications Switched mode power supplies

BAS18

Abstract: BAT 43 Schottky Diodes BYV 200 BYV 35 C BAT45 BAR29 BYV 43 45 BAT 49 melf Schottky glass BAT29
Contextual Info: SCHOTTKY DIODES SELECTOR GUIDE RF AND ULTRAFAST SWITCHING If, continuous forward current / C0» / 30 mA 15 mA V rrm V DO 35 Glass MINIMELF Glass / SOT 23 Plastic DO 35 Glass 4 BAR 19 / MINIMELF Glass c SOT 23 Plastic @ VR V f @ If max max (V) (V) (mA) (PF)

byv36c

Abstract: BYV 36E
Contextual Info: BYV36A-BYV36E Fast Recovery Rectifiers VOLTAGE RANGE: 200 - 1000 V CURRENT: 1.5-1.6 A DO-15 Features Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon,Alcohol,Is opropanol and s im ilar s olvents

BYV 200

Contextual Info: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

BYV 36E

Abstract: BYV36E BYV36A BYV36C BYV36D BYV 200
Contextual Info: BL GALAXY ELECTRICAL BYV36A Z -BYV36E(Z) VOLTAGE RANGE: 200 - 1000 V CURRENT: 1.5-1.6 A FAST RECOVERY RECTIFIERS FEATURES DO - 15 Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon,Alcohol,Is opropanol and

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

BYV 200v

Contextual Info: BYV26A thru BYV26G Pb BYV26A thru BYV26G Pb Free Plating Product 1.0 AMP.ULTRA FAST RECOVERY RECTIFIERS SOD-57 Features D D D D D Unit: inch mm Glass passivated junction Hermetically sealed package Very low switching losses Low reverse current High reverse voltage

BYV32-150

Abstract: byv 20 BYV32100
Contextual Info: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

TR-R25

Abstract: BYV32 BYV 35 C
Contextual Info: BYV32 Series Dual Ultra Fast Rectifiers TO-220AB PRV : 50 - 200 Volts Io : 18 Ampere 0.154 3.91 DIA. 0.148(3.74) 0.055(1.39) 0.045(1.14) 0.113(2.87) 0.103(2.62) FEATURES : * * * * * * 0.415(10.54)MAX. Glass passivated chip junction High current capability

BYV32-200E

Abstract: BYV32 BYVF32 JESD22-B102 J-STD-002 byv325
Contextual Info: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

Contextual Info: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

IN5711

Abstract: 1N3595DHD 4148 GERMANIUM IN5818 SMALL SIGNAL SCHOTTKY DIODES DO-35 IN270 CB-26 thomson 5ns BYV 200 in3595
Contextual Info: S G S-TH O M SO N D | - 712*1237 Ü D a 4 fl?4 THOMSON SEMI CONDUCTORS 0 T~ Y- ° — / ~ o 7 ~ germanium signal diodes Types •o Vr • f @ Vp = IV ■r m ax max min m ax V (mA) {mAJ <k A ) I Case Vr (V) gold bond Tamb = 2 5 °C / V 90 100 IN 270 200 100

BYV32

Abstract: BYV32-100 BYVF32 JESD22-B102D J-STD-002B
Contextual Info: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

BYV32

Abstract: BYVF32 JESD22-B102D J-STD-002B
Contextual Info: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

BYVB32-200-E3

Abstract: BYV32 BYVF32 JESD22-B102D J-STD-002B Diode BYV 95
Contextual Info: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability

BYV32

Abstract: BYVF32 JESD22-B102 J-STD-002 BYV 35 C BYV 35
Contextual Info: BYV F,B 32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability