BYV 27 Search Results

esja

Abstract: ESJC ESJA82-12 BYV 35 esjc 0309 ESJA 52-12
Contextual Info: Epitaxial Rectifier Diodes A tA = 25°C vF V ~ ¡F = I favm tv, = 25°C • ■ ■ ■ BYV 32-150 150 BYV 32-200 200 BYW 29-200 200 Not for new design 2x10 2x10 8 150 150 80 < 1,15 < 1,15 < 1,3 Ifsm Ifavm A t=8,3ms tvj = 25°C mA Ir trr outline mA ns < 35

SCHOTTKY bys 92-50

Abstract: RECTIFIER bys 92-50 BYV 35 BYS 98-50
Contextual Info: Epitaxial rectifier diodes Type V r rm Ifa v m t A = 25 °C V A vF Ifs m 10 ms, t,r Ir = Outline max ¡F - 1FAV W tV| = 25 °C VR tv , - a . A V mA ns °c < 0 .3 5 <50 150 111 112 V rh M • BYV 29-500 500 g 100 < 1 .4 ■ BYV 32-150 150 2x10 150 < 1.15 < 0 .6

ESJA

Abstract: ESJC
Contextual Info: Epitaxial Rectifier Diodes rrm V Ifa vm V Ifs m BYV 32-150 150 BYV 32-200 200 BYW 29-200 200 Not for new design Ir trr ns V mA = I fAVM tVJ= 25°C Vr = VHRM 150 150 80 < 1,15 < 1,15 <1,3 <0,6 <0,6 <0,6 V rrm If s m IpAVM kV A t=8,3ms tvj = 25°C mA tA = 25°C

BYV27 Spice

Abstract: BECKMAN transistor 702m BYV27 BYV27-200 85740
Contextual Info: VISHAY BYV27_Spice Vishay Semiconductors BYV27 Spice Parameters * Technology: DISCRETE DIODE * Device: Rectifier Diode BYV 27 200 * Model established: 04-95, by B. Beckmann, TM1iC63-HN + IS = 34p RS = 213m N = 1.117 IBV= 100p + CJO=114.7p VJ = 702m M = 385m FC = 500m

IN5711

Abstract: 1N3595DHD 4148 GERMANIUM IN5818 SMALL SIGNAL SCHOTTKY DIODES DO-35 IN270 CB-26 thomson 5ns BYV 200 in3595
Contextual Info: S G S-TH O M SO N D | - 712*1237 Ü D a 4 fl?4 THOMSON SEMI CONDUCTORS 0 T~ Y- ° — / ~ o 7 ~ germanium signal diodes Types •o Vr • f @ Vp = IV ■r m ax max min m ax V (mA) {mAJ <k A ) I Case Vr (V) gold bond Tamb = 2 5 °C / V 90 100 IN 270 200 100

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

SCHOTTKY DIODES CROSS REFERENCE

Abstract: SD 102 M BAT19 BAT29 equivalent 1ss99 BA 5818 SD-101 equivalent BAT29 bat 301 l BAR10
Contextual Info: SCHOTTKY DIODES CROSS REFERENCE INDUSTRY PART NUMBER SGS-THOMSON DIRECT REPLACEMENT SGS-THOMSON NEAREST EQUIVALENT INDUSTRY PART NUMBER SGS-THOMSON DIRECT REPLACEMENT SGS-THOMSON NEAREST EQUIVALENT TM M 62/63 1N 5711 1N 5711 LL101 A 1N 5712 1N 5712 LL 103 A.P.C

byw32-200

Abstract: BY228-1500 BYV 200 byt 77 byv 25-200 BYV13 BYV14 BYV16 BYW32 BYW33
Contextual Info: TELEFUNKEN ELECTRONIC ñ lC J> • ñc!5D0tlb OOQSb^ B MAU6G 'T-O f^ O f Sinterglass Rectifiers Fast Rectifiers-Soft recovery—in Sinterglass package: ^ R _ 2 5 ns tt>*550 ns Type Electrical characteristics Vr W VRRM V A BY 203/12 S /16S /20S BY 228 BY 228/13 S

byv ultra Fast Recovery Rectifier

Abstract: byv 27 ST 9527
Contextual Info: Te m ic BYV27/. TELEFUNKEN Semiconductors Ultra Fast Silicon Mesa Rectifiers Features • Controlled avalanche characteristic • L ow forward voltage • Ultra fast recovery time • G lass passivated junction • H erm etically sealed package Applications

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

byv ultra Fast Recovery Rectifier

Abstract: BYV 30 45 BYV 200 BYV27
Contextual Info: BYV27/. TELEFUNKEN Semiconductors Ultra Fast Silicon Mesa Rectifiers Features D Controlled avalanche characteristic D Low forward voltage D Ultra fast recovery time D Glass passivated junction D Hermetically sealed package Applications 94 9539 Very fast rectifier e.g. for switch mode

BYV27-200

Contextual Info: BYV27-50 THRU BYV27-200 GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 2.0 Amperes FEATURES DO-2Q4AP ♦ ♦ ♦ ♦ ♦ A # A“7 1 I Û240H MA> A \J-± ♦ ♦ ♦ ♦ t High temperature metallurgically bonded construction

BYV26

Abstract: BYV26A BYV26B BYV26C BYV26D BYV26E BYV26F BYV26G diode BYV26E
Contextual Info: N AUER P H I L I P S / D I S C R E T E bbsa^ai b' i E D027D2b Philips Semiconductors • N o n -sn a p -o ff soft- recovery sw itch in g ch a racteristics • C a p a bility of absorb in g reverse tra n sie n t energy. BYV26 series Q U IC K R E FE R E N C E DATA

diodes byw

Abstract: byw 15200 BYW 90 byw 15400 byv 71-100 BYW 200 diodes byw 16400 byw 150 byw 15600 pfr 852
Contextual Info: fast recovery rectifier diodes < 100 A diodes de redressement rapide < 100 A THOMSON-CSF Type» •o Vrr m ■f s m 10 ms A (V) (A) vF / if |r / v r r m tirr (A) max (mA) max (nis) max 3 A / Ta n ib = 9 0 ° C PFR 850 PFR 851 PFR 852 PFR 854 PFR 856 3 3 A / Tam b = 5 0 ° C

esm diodes

Abstract: 181800r c81 004 cb33 182100 REDRESSEMENT ESM182-100R 87400 DRT76 C701
Contextual Info: C B 1 9 7 (C B 1 2 6 ) (C B 3 3 ) (T O 126 ) Fast recovery silicon re c tifie r diodes — t rr 3 0 0 ns D io d e s d e re d re s s e m e n t ra p id e s a u s ilic iu m — t r r 3 0 0 ns Case Type B oîtier V RRM (V) T (vjï (°C) max •f s m (A) l 0 <A)

BYV42-200

Abstract: BYV72E-200 BY359-1500 PBYR1540CT PBYR1535CT PBYR10-25 BY359X-1500 BYV42-150 BYV29F500 BYV72F-200
Contextual Info: Philips Semiconductors Index Power Diodes Type Number BR211-140 BR211-160 BR 211-180 BR 211-200 BR211-220 BR211-240 BR 211-260 BR 211-280 Page 30 BR211SM-140 BR211SM-160 BR211SM-180 BR211SM-200 BR211SM-220 BR211SM-240 BR211SM-260 BR211SM-280 35 BY229-200 BY229-400

CX 879

Contextual Info: 879 @O?F@ FI@E 9 CJLH @ EBLHBNF@>GGR MB>GBA G>N@EFID LBG>R EC<;8: CVS`a^V_ 3 EehY[ XWbWdY[Z bWjY^_d] h[bWo 3 54@ YedjWYji im_jY^_d] YWfWX_b_jo 3 EW_bkh[ hWj[ YWd X[ J b[l[b 3 G_]^ WcX_[dj Wffb_YWX_b_jo 3 @bb c[jWb m[bZ[Z YedijhkYj_ed 3 G[hc[j_YWbbo m[bZ[Z WdZ cWha[Z Xo bWi[h

Contextual Info: C<EA6KDQ@ >JPKL<E ><G C@JF@LD><EEP K@<E@? @E@>LJH F<BG@LD> J@E<P ODLC @KL<=EDKC@? J@ED<=DEDLP CA:978 EZVijgZh 2 IdVY XVc WZ 9@ 6<RY2X 2 EV^ajgZ gViZ XVc WZ IZkZa J 2 G^\] ejgZ c^igd\Zc egdiZXi^dc 2 G^\] VbW^Zci Veea^XVW^a^in 2 @aa bZiVa lZaYZY XdchigjXi^dc0

TRANSISTOR 58050

Abstract: 3 pin TRANSISTOR 58050 58050 3 pin transistor 58050 transistor byv 32 diode BYV 88 800 ByV schottky L4985 L4985D SO20
Contextual Info: L4985 HIGH EFFICIENCY SWITCHING REGULATOR PRODUCT PREVIEW OPERATING INPUT VOLTAGE: FROM 4.5V TO 21V HIGHEFFICIENCY 3A STEP DOWN CONVERTER 3A @ 3.3V OUTPUT VOLTAGE FROM 4.5V INPUT VOLTAGE ADJUSTABLE OUTPUT VOLTAGE FROM 1.28V GATE DRIVER FOR SYNCHRONOUS RECTIFICATION

TRANSISTOR 58050

Abstract: 58050 3 pin TRANSISTOR 58050 58050 3 pin transistor 58050 transistor LXF Series REGULATOR IC V17 specifications of 24 volt stepdown transformer LXF CAPACITORS dc-dc stepdown converter 12 to 5v 3a
Contextual Info: L4985 HIGH EFFICIENCY SWITCHING REGULATOR PRODUCT PREVIEW OPERATING INPUT VOLTAGE: FROM 4.5V TO 21V HIGHEFFICIENCY 3A STEP DOWN CONVERTER 3A @ 3.3V OUTPUT VOLTAGE FROM 4.5V INPUT VOLTAGE ADJUSTABLE OUTPUT VOLTAGE FROM 1.28V GATE DRIVER FOR SYNCHRONOUS RECTIFICATION

BYS 21-90

Abstract: 3045 PT bys 26-45 SCHOTTKY bys 50 2x165
Contextual Info: Schottky rectifier diodes Type Ifavm I fsm VF tA = 2 5 "C 10 ms '[ = lAv'I.I tv| = 25 "C V A A BYS 21-45 45 1.0 BYS 21-90 90 BYS 22-45 Outline RthJC RthJA 1v] ' !rt • V °c /w °c /w °c 50 0.55 - 20 125 1.0 30 0.90 - 30 125 45 1.7 100 0.55 - 8 125 BYS 22-90

RECTIFIER bys 92-50

Abstract: SCHOTTKY bys 92-50 BYS 21-45 TH 2190 BYV 30 45 BYV 77
Contextual Info: Schottky rectifier diodes Type Vrrm VF If a v m If s m tA = 25 °C 10 ms R th J C R th J A tv j m ax Outline ¡ f = Ifavm tv| = 25 °C V A V °CI\N °c/w BYS 21-45 45 1,0 50 0,55 - 20 125 119 BYS 21-90 90 1,0 30 0,90 - 30 125 119 BYS 22-45 45 1,7 100 0,55

BYV 200

Contextual Info: BYV27-50 THRU BYV27-200 MINIATURE GLASS PASSIVATED FAST EPITAXIAL RECTIFIER Voltage - 50 to 200 Volts Current - 2 . 0 Amperes FEATURES ♦ Glass passivated cavity-free junction ♦ Superfast recovery times-epitaxial construction ♦ Low forward voltage, high current capability

55120 ferrite

Abstract: 58050 3 pin transistor 58050 byv 32 diode L4985 LXF CAPACITORS 12V DC to 24V dC converter schematic diagram 330nF capacitor LXF Series osc coil 85khz
Contextual Info: APPLICATION NOTE HIGH EFFICIENCY DOUBLE DC-DC CONVERTER WITH L4985 by : Claudio Adragna The growing use of portable equipments supplied by rechargeable batteries requests the implementation of power supplies able to operate with high efficiency at low voltages, as well as to perform