BYV 20 DIODE Search Results

byv 20

Abstract: byv 65
Contextual Info: BYV 10-20 A SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.

BYV 200

Abstract: byv 20
Contextual Info: BYV 10-20 A SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.

ByV schottky

Contextual Info: BYV 10-20 → 40 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.

byv 20

Contextual Info: BYV 10-20 → 40 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.

diode 698

Abstract: DIODE REDRESSEMENT diodes redressement thomson Diodes de redressement
Contextual Info: BYV 10-20 —►B YV 10-4 THOMSON SEMICONDUCTORS SCHOTTKY RECTIFIER .DIODES, DIODES DE REDRESSEMENT'! SCHOTTKY . *»? : -. 'o - 1 A*/Tamb - 80°C Metal to atficon rectifier diodes in glees case featuring very low forward voltage drop and fast recovery time, intented for low voltage switching

Contextual Info: C T SGS-THOMSON ^ 7 # . HD»HLI TO s M(gi BYV 10-20 ->40 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featu­ ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre­

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

BYV 200

Abstract: diodes byw 92 FZJ 101 99P-200 byw 150 BYW 200 diodes byw 08 200 BYV 35 diodes byw 51 200 BYV 35 C
Contextual Info: / ^ 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# raoœmimMogs ' r /v r r m Tj 100°C max mA *rr (1) max (ns) Package 1 35 TO 220 RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES (Continued) VRRM = 50,100,150, 200 V Type trr max 35.80 ns

BYV 200

Abstract: BYV 200v FZJ 101 BYX61-200 BYW 200 BYX61-400 99P-200 77P-200 BYX65-400 BYV 35 C
Contextual Info: SGS-THOMSON ^/^7#7 raoœmimMogs GENERAL PURPOSE & INDUSTRIAL RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES Continued VR R M = 50,100,150, 200 V Type t rr max 35.80 ns ' r /v r r m Tj 100°C max (mA) *rr (1) max (ns) Package 1 35 TO 220

SOD106A

Abstract: 1N5819 sod87 IMPLOTEC byv 20 diode 1N5817 Philips BYG90-40 BYG90-90 sod81
Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Medium-power rectifiers SCHOTTKY-BARRIER DIODES OVERVIEW leaded Vr V 20 30 40 90 100 SOD81 1.0 A SOD87 1.0 A surface-mount SOD106A SOT223 1.0 A 1.0 A

Diode BYV 95

Abstract: byv 16 BYV 08
Contextual Info: BYV12, BYV 13, BYV 14, BYV 15, BYV 16 Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Lead Pb -free component • Compliant to RoHS directive 2002/95/EC and in

BYV63

Abstract: Telefunken diode color code aeg rectifier BW61 BYV61 aeg telefunken
Contextual Info: A E G CORP 17E D 002=i42b □G G ' i f i 3 S 1 • BYV 61 •BYV 62 •BYV 63 ITilLiiFttllliSKlliil electronic Creative Technologies T^es-IS' Silicon M esa Diodes Applications: Very fast rectifier and switch for example for switch mode power supply Features:

BAS18

Abstract: BAT 43 Schottky Diodes BYV 200 BYV 35 C BAT45 BAR29 BYV 43 45 BAT 49 melf Schottky glass BAT29
Contextual Info: SCHOTTKY DIODES SELECTOR GUIDE RF AND ULTRAFAST SWITCHING If, continuous forward current / C0» / 30 mA 15 mA V rrm V DO 35 Glass MINIMELF Glass / SOT 23 Plastic DO 35 Glass 4 BAR 19 / MINIMELF Glass c SOT 23 Plastic @ VR V f @ If max max (V) (V) (mA) (PF)

Contextual Info: TELEFUNKEN ELECTRONIC 17E D • ô'îSDQ'îb 000^035 fl BYV 61 •BYV 62 •BYV 63 TMUIIFIMIKIK] electronic Creative Technologies Silicon Mesa Diodes Applications; Very fast rectifier and switch for example for switch mode power supply Features: • Glass passivated junction

BAT19

Abstract: DO-35 C3 BYV 35
Contextual Info: THO M SO N MIL ET S P A T I A U X SSE D Bi 1 0 E b 6 7 E Q G O C ma ? 205 • THCMV-<>j,-e% DISCRETE COMPONENTS C3 PRODUCT DESCRIPTION PACKAGE -2 g -2 S 03 O £ <=> . 0£ 5 > -» -O r> O < LU O ys ^ < 75 < LU SCHOHKY SMALL SIGNAL DIODES VRRM = 20 V Cmax =

Contextual Info: BYV 10-60  SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forwardvoltagedrop and fastrecovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.

Contextual Info: BYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.

IN5711

Abstract: 1N3595DHD 4148 GERMANIUM IN5818 SMALL SIGNAL SCHOTTKY DIODES DO-35 IN270 CB-26 thomson 5ns BYV 200 in3595
Contextual Info: S G S-TH O M SO N D | - 712*1237 Ü D a 4 fl?4 THOMSON SEMI CONDUCTORS 0 T~ Y- ° — / ~ o 7 ~ germanium signal diodes Types •o Vr • f @ Vp = IV ■r m ax max min m ax V (mA) {mAJ <k A ) I Case Vr (V) gold bond Tamb = 2 5 °C / V 90 100 IN 270 200 100

ym 238

Contextual Info: SGS-THOMSON « ^ f i& IC T lR M Q O S B Y V 1 0 -2 0 -^ 4 0 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featur­ ing very low foward voltage drop and fast recovery time, intended for low voltage switching mode power

BYV 200

Contextual Info: Æ T SGS-THOMSON [ { » IliO T O R K S B Y V 5 2 -5 0 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES . VERY SM ALL CONDUCTION LOSSES • NEGLIGIBLE SW ITCHING LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIMES . REDUCED SIZE Cathode connected to case D E S C R IP T IO N

013IF

Contextual Info: S T T ^ 7# S G S -T H O M S O N M iœ & ie T fM iG S B Y V 5 4 V -5 0 200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES • V E R Y S M A L L C O N D U C T IO N LO S S E S . N E G LIG IB LE S W IT C H IN G LO S S E S ■ LO W F O R W A R D A N D R E V E R S E R E C O V E R Y

Contextual Info: rz 7 SGS-TUOMSON L iO T « ! ^ 7# 5 B Y V 10 -20 A SMALL SIGNAL SCHOTTKY DIODE D E S C R IP T IO N Metal to silicon rectifier diode in glass case featur­ ing very low toward voltage drop and fast recovery time, intended for low voltage switch ing mode power

ByV schottky

Abstract: DIODE 2FL 2fl marking diode sgs-thomson diodes byv 65
Contextual Info: Æ T SGS-THOMSON ^ 7 #« HD ê iILI®T®(S R!lûÊi B Y V 1 0 -2 0 -> 4 0 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in glass case featu­ ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode

byv 65

Contextual Info: BYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.