BY228 PH Search Results

SC01 Mounting 1996 1

Abstract: BY228 Diode M3D118 BY228 DIODE by228
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BY228 Damper diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 May 24 Philips Semiconductors Product specification Damper diode BY228 FEATURES

BY228 Diode

Abstract: BY228 M3D118 DIODE by228
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BY228 Damper diode Product specification Supersedes data of May 1996 File under Discrete Semiconductors, SC01 1996 Sep 26 Philips Semiconductors Product specification Damper diode BY228 FEATURES

DIODE by228

Abstract: BY228 M3D118
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BY228 Damper diode Product specification Supersedes data of May 1996 1996 Sep 26 Philips Semiconductors Product specification Damper diode BY228 FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high

by228

Abstract: BY228 Diode
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BY228 Damper diode Product specification Supersedes data of May 1996 1996 Sep 26 Philips Semiconductors Product specification Damper diode BY228 FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high

CASE-DO201AD

Abstract: by228
Contextual Info: BY228/13 THRU BY228/15 FRONTIER ELECTRONICS CO., LTD. 3A CLAMPER/DAMPER RECTIFIER FEATURES ! DESIGNED FOR CLAMPING / DAMPING CIRCUIT OF HORIZONTAL DEFLECTION SYSTEM ! PLASTIC PACKAGE HAS UNDERWRITERS LABORATORY FLAMMABILITY CLASSIFICATION 94V-0 ! VOID-FREE MOLDED PLASTIC

bv228

Abstract: BY22B BY228
Contextual Info: Philips Semiconductors Product specification Damper diode BY228 FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed construction. • High maximum operating temperature This package is hermetically sealed and fatigue free as coefficients of

BY228

Abstract: H140A
Contextual Info: Certificate TH97/10561QM BY228 DAMPER DIODE DO - 201AD PRV : 1500 Volts Io : 3.0 Ampere FEATURES : * * * * * Certificate TW00/17276EM 1.00 25.4 MIN. 0.21 (5.33) 0.19 (4.83) Glass passivated chip High current capability High maximum operating temperature

BY228 equivalent

Abstract: by228 hp
Contextual Info: BY228 SERIES GLASS PASSIVATED JUNCTION CLAMPER / DAMPER SILICON RECTIFIER Voltage - 1500 Volts Current - 2.5 Amperes GENERAL DESCRIPTION These silicon Glass Passivated C lam p er/ Damper Rectifiers are designed for T v Applications, such as clamping circuits in

bv228

Contextual Info: Product specification P hilips Sem iconductors Damper diode BY228 FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed construction. • High maximum operating temperature This package is hermetically sealed and fatigue free as coefficients of

Contextual Info: BY228 DAMPER DIODES DO - 201AD PRV : 1500 Volts FEATURES : * * * * * Glass passivated chip High current capability High maximum operating temperature Low reverse current Pb / RoHS Free 1.00 25.4 MIN. 0.21 (5.33) 0.19 (4.83) 0.375 (9.53) 0.285 (7.24) MECHANICAL DATA :

diode sy 160

Contextual Info: Philips Semiconductors Short-form product specification Parallel efficiency diode FEATU RES BY228 Q U IC K R E F E R E N C E DATA • High reverse voltage capability with controlled recovery time. APPLICATIO N S • Efficiency diode in transistorized horizontal deflection circuits of

Contextual Info: DIGITRON SEMICONDUCTORS BY228 STANDARD RECOVERY RECTIFIER MAXIMUM RATINGS Tamb = 25°C unless otherwise specified Parameter Test condition Symbol Value VR 1500 V IR = 100µA VRRM 1650 V tp = 10ms, half sinewave IFSM 50 A Reverse voltage Repetitive peak reverse voltage

BY228

Abstract: modulator circuit
Contextual Info: N AMER PHI LIP S/ DI S CR ET E b^E D • bbSB'iBl GÜ2fai*Sfl ÖOS ■ APX BY228 Jl PARALLEL EFFICIENCY DIODE Double-diffused passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended fo r use as efficiency diode in transistorized horizontal deflection circuits o f television

by228 BL

Abstract: BY228
Contextual Info: BL GALAXY ELECTRICAL BY228 Z VOLTAGE RANGE: 1500 V CURRENT: 2.5 A FAST RECOVERY RECT IFIER FEATURES DO - 27 Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with Freon,Alcohol,Is opropanol and s im ilar s olvents

BY328

Abstract: C 461 by448 SOD-64 BY-328
Contextual Info: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Medium-power rectifiers DAMPER DIODES OVERVIEW leaded V RRM V 1200 1400 1500 SOD57 16 kHz SOD64 16 kHz SOD64 32 kHz SOD64 64 kHz BY458 BY438 - - BY328

Contextual Info: bbS3R31 D02b4SA ADS LRE D N AMER PHILIPS/DISCRETE IAPX B Y 228 Jl PARALLEL EFFICIENCY DIODE Double-diffused passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended for use as efficiency diode in transistorized horizontal deflection circuits of television

EQUIVALENT BYD33D

Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
Contextual Info: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and

BT136-600E equivalent

Abstract: D2499 equivalent D1878 equivalent BT139-600 equivalent C4927 d1577 d1554 C5386 c5129 e13005 equivalent
Contextual Info: “Philips Type” refers to closest Philips alternative or equivalent if available. Always consider the application and compare data specifications before recommending the suitable Philips type. Notes: 1 - dual device. 2 - competitor RDS on falls between two Philips types, hence either stated device may be suitable.

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

BY228ph

Abstract: BYV26E PH 1N5062 ph BY228 PH 1N4007 sod87 za109ts BYW95C PH BYR245 sj 1a0 SOD87 1N4007
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Power Diodes Supersedes data of 2004 Apr 27 2004 Jun 11 Philips Semiconductors Product specification Power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE PACKAGE TYPE NUMBER MARKING CODE PACKAGE

PH 33D

Abstract: PH 33G BYW95C PH BYM26C PH BYV26E PH BYW96E PH BYV96E ph 33D-PH 33d ph V10-40
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Marking codes TYPE NUMBER TO MARKING CODE MARKING CODE PACKAGE BY558 BY558 PH SOD115 SOD57 BY578 BY578 PH SOD115 SOD57 BY584 orange SOD61A 1N4004 PH SOD57 BY614

BU4508DX equivalent

Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent
Contextual Info: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

BU2508A

Abstract: BY228 BU2508
Contextual Info: Product specification Philips Semiconductors Silicon diffused power transistor BU2508A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to