BY 399 DATA SHEET Search Results

SST39VF1601

Abstract: SST39LF160 SST39VF160 f173
Contextual Info: 16 Mbit x16 Multi-Purpose Flash SST39LF160 / SST39VF160 Data Sheet SST39LF/VF1603.0 & 2.7V 16Mb (x16) MPF memories FEATURES: • Organized as 1M x16 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF160 – 2.7-3.6V for SST39VF160 • Superior Reliability

by 399 data sheet

Abstract: diode BY 399 SST39LF160 SST39VF160 VF160 xx55
Contextual Info: 16 Mbit x16 Multi-Purpose Flash SST39LF160 / SST39VF160 Data Sheet SST39LF/VF1603.0 & 2.7V 16Mb (x16) MPF memories FEATURES: • Organized as 1M x16 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF160 – 2.7-3.6V for SST39VF160 • Superior Reliability

diode BY 399

Abstract: SST39VF1601 SST39LF160 SST39VF160
Contextual Info: 16 Mbit x16 Multi-Purpose Flash SST39LF160 / SST39VF160 Data Sheet SST39LF/VF1603.0 & 2.7V 16Mb (x16) MPF memories FEATURES: • Organized as 1M x16 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF160 – 2.7-3.6V for SST39VF160 • Superior Reliability

S7114

Abstract: SST39LF160 SST39VF160 0027H1
Contextual Info: 16 Mbit x16 Multi-Purpose Flash SST39LF160 / SST39VF160 Data Sheet SST39LF/VF1603.0 & 2.7V 16Mb (x16) MPF memories FEATURES: • Organized as 1M x16 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF160 – 2.7-3.6V for SST39VF160 • Superior Reliability

39902

Contextual Info: 8 Mbit / 16 Mbit x16 Multi-Purpose Flash SST39LF800 / SST39LF160 / SST39VF800 / SST39VF160 Data Sheet FEATURES: • Organized as 512K x16 / 1M x16 • Latched Address and Data • Single Voltage Read and Write Operations - 3.0-3.6V for SST39LF800/160 - 2.7-3.6V for SST39VF800/160

Contextual Info: 16 Megabit x16 Multi-Purpose Flash SST39LF160 / SST39VF160 Data Sheet FEATURES: • Organized as 1M x16 • Latched Address and Data • Single Voltage Read and Write Operations - 3.0-3.6V for SST39LF160 - 2.7-3.6V for SST39VF160 • Superior Reliability

lz95n37

Abstract: LJ64H034 lz95n trf 640 SHARP electroluminescent display sharp el display SHARP EL LJ64H034 circuit diagram AF003 LJ64H034 EL
Contextual Info: LJ64H034 EL Display Unit LCD Data Sheet FEATURES DESCRIPTION • Display Diagonal: 4.7" The SHARP EL display unit consists of a thin film EL panel, high voltage MOS-ICs for panel driving, and a display control circuit. By supplying eleven input signals of CMOS level and two DC power supplies of

BY396

Abstract: BY397 BY398 BY399 D0-201AD
Contextual Info: BY396 . . . 399 Series Data Sheet 3.0 Amp FAST RECOVERY PLASTIC RECTIFIERS Mechanical Dimensions Description JEDEC D0-201AD .285 .375 .190 .210 1.00 Min. .050 typ. Features n FAST SWITCHING FOR HIGH EFFICIENCY n 3.0 AMP OPERATION @ TA = 50°C, WITH NO THERMAL RUNAWAY

shd4341

Contextual Info: SHD434001 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 399, REV. – Formerly part number SHD4341 PNP QUAD SMALL SIGNAL TRANSISTOR DESCRIPTION: PNP QUAD SMALL SIGNAL TRANSISTORS IN A CERAMIC DIP PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE @ TA = 25°C UNLESS OTHERWISE SPECIFIED AND APPLY TO EACH TRANSISTOR

2 7-segment

Contextual Info: V 399 Primary Silver Data Sheet Type Number …………………………… Designation IEC ………………………. System …………………………….……. 399 SR 57 Silver oxide / Zinc / KOH - Electrolyte Nominal Voltage ……………………….

S14606

Abstract: s298 S301 level shifter s14606ej1v0ds s297 S300 C100 S298-S300 S14606EJ1V0DS00
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD16780A 300 OUTPUT TFT-LCD SOURCE DRIVER DESCRIPTION The µ PD16780A is a source driver for 300-output TFT-LCDs, providing support for only striped pixel array LDCs. The driver consists of a shift register for generating the sampling timing and sample & hold circuits for sampling the

ARM Advanced RISC Machine

Abstract: Advanced RISC Machine 300D AMBA Peripheral Bus decoder AMBA arbiter decoder -1996
Contextual Info: AMBA Reset Controller Data Sheet Document Number: ARM DDI 0051C Issued: April 1997 Copyright Advanced RISC Machines Ltd ARM 1997 All rights reserved ENGLAND GERMANY Advanced RISC Machines Limited 90 Fulbourn Road Cherry Hinton Cambridge CB1 4JN UK Telephone: +44 1223 400400

Transistor NEC K 3654

Abstract: NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS

NEC D288

Abstract: d1397 D331 transistor transistor d288 nec d1594 D78 NEC D1594 transistor nec D78 transistor d168 D1116
Contextual Info: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

554 CA3

Abstract: LC-XD1217P LC-XD1217PG LC-XD1217 LC-XD1217APG 70.4 L marking M511 ati 361 G104101 Discharge
Contextual Info: Individual Data Sheets LC-XD1217PG/APG* For standby power supplies. Expected trickle design life: 10 – 12 years at 20 °C according to Eurobat. VdS G104101 Dimensions mm M5 M5 11.8 11.8 12.5 12.5 12.5 M511 M5 M5 M5 Terminal type (option): 11.8 11 11 LC-XD1217PG:

4435 power ic

Abstract: transistor NEC B 617 IC 4435 NEC silicon epitaxial power transistor 1694 NEC B 536 nec b 536 transistor NEC B 617 gh 312 NPN transistor mhz s-parameter 2SC3357
Contextual Info: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE DIMENSIONS High gain 2 | S21 | = 12 dB TYP, @f = 1 GHz, VCE = 10 V, Ic = 20 mA New power mini-mold package version of a 4-pin type

slot AGP 124 pin

Abstract: SiS chipset W83194BR-640
Contextual Info: W83194BR-640 166MHZ CLOCK FOR SIS CHIPSET W83194BR-640 Data Sheet Revision History Pages Dates Version Version Main Contents On Web 1 n.a. 2 n.a. 02/Apr 1.0 n.a. All of the versions before 0.50 are for internal use. 1.0 Change version and version on web site to 1.0

transistor NEC D 822 P

Abstract: transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F P1093 4435 power ic
Contextual Info: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R E Q U E N C Y LOW D IS T O R T IO N A M P L IF IE R FEATURES • PACKAGE DIMENSIONS High gain in millimeters | S 21 | 2 = 12 dB TYP, @ f = 1 GHz, V c e = 10 V , Ic = 20 mA

Automatic street light using IC 555

Abstract: light sensitive photo diode LCC48 DATA Sheet IC 555 data sheet book ic 555 ICM102A voltage controlled oscillator ic 555 CMOS Bayer Media Technology Corp IC MASTER 2001
Contextual Info: ICM102A CIF CMOS sensor Data Sheet Version 1.0 July 2002 ICM102A CIF CMOS image sensor Data Sheet V1.0 July 2002 IC Media Corporation IC Media Technology Corporation 545 East Brokaw Road San Jose, CA 95112, U.S.A. Phone: 408 451-8838 Fax: (408) 451-8839

AN399

Abstract: APP399 DS31256
Contextual Info: Maxim > App Notes > TELECOM Keywords: loopback modes, HDLC controller Mar 03, 2003 APPLICATION NOTE 399 DS31256 Loopback Modes Abstract: This application note shows how to configure various loopback modes of the DS31256 HDLC controller, and how to verify and troubleshoot as necessary.

DFT301-801X7R102S50

Abstract: DFT301-801X7R S21-Frequency DFT301801X7R GRM39 GRM40 marking C8 amplifier ghz transmitter receiver 35369
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8204TK VARIABLE GAIN AMPLIFIER FOR TRANSMITTER AGC DESCRIPTION The µPC8204TK is a silicon monolithic integrated circuit designed as variable gain amplifier. The package is 6-pin lead-less minimold suitable for surface mount.

35lp

Abstract: LCC48 352x288 IC MASTER 2001 ICM102A 666 RGB LCC 48
Contextual Info: ICM102A CIF CMOS sensor Data Sheet Version 0.6 August 2001 ICM102A CIF CMOS image sensor Data Sheet V0.6 August 2001 IC Media Corporation IC Media Technology Corporation 545 East Brokaw Road San Jose, CA 95112, U.S.A. Phone: 408 451-8838 Fax: (408) 451-8839

2SC5005

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

Contextual Info: Preliminary Data Sheet NV4V41SF Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source R08DS0064EJ0200 Rev.2.00 Jun 07, 2013 DESCRIPTION The NV4V41SF is a high output blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure achieves a high optical power output of 600 mW CW .