BY 399 DATA SHEET Search Results

SST39VF1601

Abstract: SST39LF160 SST39VF160 f173
Contextual Info: 16 Mbit x16 Multi-Purpose Flash SST39LF160 / SST39VF160 Data Sheet SST39LF/VF1603.0 & 2.7V 16Mb (x16) MPF memories FEATURES: • Organized as 1M x16 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF160 – 2.7-3.6V for SST39VF160 • Superior Reliability

by 399 data sheet

Abstract: diode BY 399 SST39LF160 SST39VF160 VF160 xx55
Contextual Info: 16 Mbit x16 Multi-Purpose Flash SST39LF160 / SST39VF160 Data Sheet SST39LF/VF1603.0 & 2.7V 16Mb (x16) MPF memories FEATURES: • Organized as 1M x16 • Single Voltage Read and Write Operations – 3.0-3.6V for SST39LF160 – 2.7-3.6V for SST39VF160 • Superior Reliability

Contextual Info: 16 Megabit x16 Multi-Purpose Flash SST39LF160 / SST39VF160 Data Sheet FEATURES: • Organized as 1M x16 • Latched Address and Data • Single Voltage Read and Write Operations - 3.0-3.6V for SST39LF160 - 2.7-3.6V for SST39VF160 • Superior Reliability

shd4341

Contextual Info: SHD434001 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 399, REV. – Formerly part number SHD4341 PNP QUAD SMALL SIGNAL TRANSISTOR DESCRIPTION: PNP QUAD SMALL SIGNAL TRANSISTORS IN A CERAMIC DIP PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE @ TA = 25°C UNLESS OTHERWISE SPECIFIED AND APPLY TO EACH TRANSISTOR

2 7-segment

Contextual Info: V 399 Primary Silver Data Sheet Type Number …………………………… Designation IEC ………………………. System …………………………….……. 399 SR 57 Silver oxide / Zinc / KOH - Electrolyte Nominal Voltage ……………………….

S14606

Abstract: s298 S301 level shifter s14606ej1v0ds s297 S300 C100 S298-S300 S14606EJ1V0DS00
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD16780A 300 OUTPUT TFT-LCD SOURCE DRIVER DESCRIPTION The µ PD16780A is a source driver for 300-output TFT-LCDs, providing support for only striped pixel array LDCs. The driver consists of a shift register for generating the sampling timing and sample & hold circuits for sampling the

Transistor NEC K 3654

Abstract: NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS

sis735

Abstract: crystal 6 Mhz sis 735 k7 W83194BR-740 sis 735
Contextual Info: W83194BR-740 STEPLESS CLOCK FOR SIS735/740 CHIPSET W83194BR-740 Data Sheet Revision History Pages Dates Version Version Main Contents On Web 1 n.a. 2 n.a. 02/Apr 1.0 n.a. All of the versions before 0.50 are for internal use. 1.0 Change version and version on web site to 1.0

4435 power ic

Abstract: transistor NEC B 617 IC 4435 NEC silicon epitaxial power transistor 1694 NEC B 536 nec b 536 transistor NEC B 617 gh 312 NPN transistor mhz s-parameter 2SC3357
Contextual Info: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE DIMENSIONS High gain 2 | S21 | = 12 dB TYP, @f = 1 GHz, VCE = 10 V, Ic = 20 mA New power mini-mold package version of a 4-pin type

slot AGP 124 pin

Abstract: SiS chipset W83194BR-640
Contextual Info: W83194BR-640 166MHZ CLOCK FOR SIS CHIPSET W83194BR-640 Data Sheet Revision History Pages Dates Version Version Main Contents On Web 1 n.a. 2 n.a. 02/Apr 1.0 n.a. All of the versions before 0.50 are for internal use. 1.0 Change version and version on web site to 1.0

transistor NEC D 822 P

Abstract: transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F P1093 4435 power ic
Contextual Info: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R E Q U E N C Y LOW D IS T O R T IO N A M P L IF IE R FEATURES • PACKAGE DIMENSIONS High gain in millimeters | S 21 | 2 = 12 dB TYP, @ f = 1 GHz, V c e = 10 V , Ic = 20 mA

Automatic street light using IC 555

Abstract: light sensitive photo diode LCC48 DATA Sheet IC 555 data sheet book ic 555 ICM102A voltage controlled oscillator ic 555 CMOS Bayer Media Technology Corp IC MASTER 2001
Contextual Info: ICM102A CIF CMOS sensor Data Sheet Version 1.0 July 2002 ICM102A CIF CMOS image sensor Data Sheet V1.0 July 2002 IC Media Corporation IC Media Technology Corporation 545 East Brokaw Road San Jose, CA 95112, U.S.A. Phone: 408 451-8838 Fax: (408) 451-8839

35lp

Abstract: LCC48 352x288 IC MASTER 2001 ICM102A 666 RGB LCC 48
Contextual Info: ICM102A CIF CMOS sensor Data Sheet Version 0.6 August 2001 ICM102A CIF CMOS image sensor Data Sheet V0.6 August 2001 IC Media Corporation IC Media Technology Corporation 545 East Brokaw Road San Jose, CA 95112, U.S.A. Phone: 408 451-8838 Fax: (408) 451-8839

2SC5005

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

Contextual Info: Preliminary Data Sheet NV4V41SF Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source R08DS0064EJ0200 Rev.2.00 Jun 20, 2013 DESCRIPTION The NV4V41SF is a high output blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip structure achieves a high optical power output of 600 mW CW .

Contextual Info: Cree XLamp® XR LED Binning and Labeling Cree XLamp LEDs combine the brightness of power LED chips with a rugged package capable of operating in excess of one watt. XLamp LEDs lead the solid-state lighting industry in brightness while providing a reflow-solderable design that is optimized for

Contextual Info: PS398/PS399

PS398

Abstract: PS398CSE PS398CSEE PS398ESE PS399 PS399CSE 398P
Contextual Info: PS398/PS399

Contextual Info: A Business Partner of Renesas Electronics Corporation. Preliminary NV4V41SF Data Sheet Blue-Violet Laser Diode 405 nm Blue-Violet Laser Light Source R08DS0064EJ0200 Rev.2.00 Jun 20, 2013 DESCRIPTION The NV4V41SF is a high output blue-violet laser diode with a wavelength of 405 nm. A newly developed LD chip

EPM5130

Abstract: 5962-9314401MZC 5962-9324702MXC 5962-8946901YC 5962-8686401 EP1800I 5962-8854901xa 5962-9314402MXA 5962-8946804 Altera EPM5128
Contextual Info: Military Products March 1995, ver. 4 Data Sheet Introduction Altera's military devices are manufactured with advanced CMOS technology to provide an optimum combination of reliability, speed, density, and low power consumption. Altera offers military devices that

62275

Abstract: E116841 CT4BK18-M CT8N
Contextual Info: 3M Cable Ties Data Sheet April 2012 Description 3M™ Cable Ties are molded from 6/6 nylon and are available in a variety of sizes and styles, including weather resistant black for outdoor use. Agency Approvals & Self Certifications Products which are UL Listed as noted in the Typical Data section meet UL

Contextual Info: PS398/PS399

Contextual Info: SCOPE: PRECISION 8-CHANNEL/DUAL 4-CHANNEL LOW-VOLTAGE CMOS ANALOG MULTIPLEXER Device Type 01 02 Generic Number MAX398M x /883B MAX399M(x)/883B Circuit Function 8-Channel Analog Multiplexer Dual 4-Channel Analog Multiplexer Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows:

nec 2401 831

Abstract: nec 2401 2SC5010-T1 2SC5010 437 20000 marking 83 7749 transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and